Eric M. Rehder has over 20 years of experience in materials science, semiconductor device fabrication and characterization. He is currently a Senior Staff Engineer at Spectrolab Inc., where he pursues government funded development programs and identifies innovative manufacturing processes. Previously he held several engineering roles developing solar cells, RF devices, and managing production programs. He has a Ph.D. in Materials Science from University of Wisconsin-Madison and numerous patents and publications in the field.

1. Eric M. Rehder
Office Address:
Spectrolab Inc.
12500 Gladstone Ave.
Sylmar, CA 91342
Home Address:
1567 Fair Park Ave
Los Angeles, CA 90041
401-595-5332
eric.rehder@gmail.com
Experience:
2016 - Present: Senior Staff Engineer-Wafer Fabrication Group, Spectrolab Inc. (subsidiary of
Boeing Corp.)
o Pursuit of government funded development programs
o Identification and initial evaluation of innovative manufacturing processes
o SPC analysis of device manufacturing
2015: Senior Staff Engineer-Space Solar Panel Products, Spectrolab Inc
o Advanced technology for solar panel structure and manufacturing with ultimate goals
ranging between advanced performance and cost reduction as desired by the customer
o Additive manufacturing of polymer and conducting components
o Engineering management of programs for unique device structures and out of the
ordinary space solar panels
o Writes and supports proposals to customers
2010 – 2014: Senior Staff Engineer-R&D Group, Spectrolab Inc. (subsidiary of Boeing Corp.)
o Program manager and principle investigator on multiple internal research and
development and government funded programs ($3M/yr)
o Assemble team to execute project
o Synthesize program goals into technical approach to motivate team’s action
o Guide technical analysis and experimental design by the team utilizing structured
problem solving tools as appropriate such as Ishikawa/fishbone diagrams, fault
trees, FMEA, and factorial design of experiments.
o Ensure technical, cost, and schedule commitments are met
o Respond to a changing set of program goals (budget, technical, etc.)
o Technology Development
o Led programs at the device design, wafer fabrication, and assembly level.
o Design for X (yield, cost, risk, etc.) approach was instrumental to identify
constraints and conflicts, while also identifying opportunities.
o Knowledge of and utilization of new materials, processes, and equipment is
integral to the design for manufacturing approach.
o Beginning-of-life yield was very important and fed back into the device design,
wafer fabrication, and assembly
o Reliability and resistance to environmental degradation in the space environment
is a major challenge and influenced the device structure
o Communication Skills
o Regularly produced written reports, led conference calls, and led internal and
external design reviews
o Skilled at delivering succinct reviews to management
o Technical and industry conference presentations

2. o Exceptional communication skills to listen, synthesize, and present ideas.
o Extensive experience presenting to demanding, aggressive customers.
• Achievements
o 2014 Associate Technical Fellow
o 2013 Boeing World Class Engineer
2002 - 2010: Staff Scientist, Kopin Corporation
• General
oExtensive experience in the high volume manufacturing by metal organic vapor phase
epitaxy (MOVPE) of RF devices
oStructural, optical, and electrical characterization of these materials
oAdvancement of materials and device design for FET, pHEMT, HBT, and BiHEMT
devices
• Production Responsibilities
oTechnical Product Manager for a number of high-volume wafer production programs
encompassing multiple deposition systems at three sites running 24 hours a day. These
programs involved both domestic as well as Asian customers.
oManaged development projects carried out at Kopin Taiwan Corporation subsidiary.
oTechnical assistance to materials characterization and device processing groups.
oLed project from conception to implementation of non-destructive testing of product
material. This was a groundbreaking transformation in product verification assuring
process accuracy (wafer temperature) and product structure (layer thicknesses). All
accomplished by a fully automated data processing system for SPC charts that
delivered actionable reports to the engineering team. Extensive engagement with
internal and external software teams for local applications, database structure and
applications, GUI design, and data presentation.
• R&D Responsibilities
oControl system experience setting multizone PID parameters on temperature control
system
oDevelopment of characterization techniques, semiconductor materials and patented
device structures
oEngaged with universities for high risk projects (SBIR/STTR programs)
oDeveloped specifications for, procured, and brought into production capital equipment
including in situ reflectance, low temperature photoluminescence microscope, multi-
field Hall.
1996 - 2002 Research Assistant, University of Wisconsin-Madison
• UHVCVD Deposition of alloys of Si, Ge, and C and their relaxation on Si and silicon-on-
insulator (SOI) substrates
• Custom UHV system design including load lock, sample transfer, UHV heater, etc.
• Precision machining of Al, steel, molybdenum materials. Design and procure custom
machined parts of niobium, tantalum, alumina, sapphire, glass
• Design and build of electrical systems for safety monitoring and safety interlock
• Fabrication of control system for gas system controls (Switch inputs, LED monitoring,
computer I/O, relay, and solenoid actuation).
• Design and build of optical pyrometer including opamp-based picoammeter (OPA111)
with low noise, low drift, and exceptional linearity and interfacing to 20 bit current-to-
voltage converter (DDC101)

3. • Computer interfacing to analog devices, digital devices, and serial communications to
equipment
• Labview programming environment
1994 – 1996 Undergraduate Research Assistant, Carnegie Mellon University
• Ab initio calculations of gas phase reaction rates
• Computer interfacing to multi-sector mass spectrometer for studying gas phase reactions
involving A/D input/outputs, digital I/O, and counter/timer boards.
• C-based programming environment
Education:
Continuing Education
• Advanced Excel Training – 2010
• 8D Problem Solving Training – 2007
• Design of Experiment Methods Training – 2006
• Failure Mode and Effects Analysis Training – 2006
Ph.D. in Materials Science and Engineering,
• Materials Science Program of University of Wisconsin-Madison, May 2002
• Dissertation: “Dislocation Dynamics of Silicon Germanium Relaxation on Silicon-on-
Insulator Substrates.”
• Advisor: Thomas F. Kuech
B.S. in Chemistry with University Honors and a Minor in Physics.
• Carnegie Mellon University, May 1996
• Warner prize for excellence, May 1996
Technical Experience:
• Material Systems: SiGeC, Si-on-Insulator, Si-on-Sapphire, GaAs, AlGaAs, InGaAs,
InGaAsN, AlInGaP, GaN, AlN
• Growth and Characterization: Aixtron & Veeco, UHVCVD, UHV, AFM, STM,
Profilometer, XRD, XRR, Hall, PL, FTIR ATR, Raman, TEM, FIB-SEM, RHEED,
Curvature sensor, Ellipsometry, Nomarski Microscopy, DC and CV Electrical
Characterization of Devices, Electroluminescence, Optical Surface Analyzer.
• Technical Software: Minitab, Labview, Excel, Origin, Silvaco/Atlas, Matlab, Bede Rads
• Electronic test: oscilloscopes, function generators, multimeters, LCR meter, spectrum
analyzer, lock-in amplifier, pulse counting, current amplifier, etc.
Issued Patents:
• Bipolar transistor with enhanced base transport, 7,566,948
• Bipolar transistor with enhanced base transport, 7,872,330
• Systems and methods for separating components of a multilayer stack of electronic
components, 8,748,324
Pending Patent Applications:
• Lateral Solar Cell Structure, 20130174893

4. • Solar cells including low recombination electrical contacts, 20130284254
• Multi-layer back surface field layer in a solar cell structure, 20130074934
• Methods for monitoring growth of semiconductor layers 20120293813
• Adhesive bonded solar cell assembly, 20150007864
• Method and layer structure for preventing intermixing of semiconductor layers,
20150171075
• 12 additional patents applications not yet published
Other Relevant Experience:
WRCT – Carnegie Mellon Student Radio
• Director of Training 1996
• Program Director 1996
WSUM – University of Wisconsin Student Radio
• Chief Engineer 1999-2000
• Design and wiring of broadcast and production studios
Publications:
1. Eric Rehder, M. Zhou, L. Zhang, N. R. Perkins, S. E. Babcock, T. F. Kuech, “Structure of
AlN on Si (111) Deposited with Metalorganic Vapor Phase Epitaxy”, MRS Internet J.
Nitride Semicond. Res. 4S1, G3.56 (1999)
2. E.M. Rehder, T.S. Kuan, and T.F. Kuech, “Mechanism for the Reduction of Threading
Dislocation Densities in Si0.82Ge0.18 Films on Silicon on Insulator Substrates”, Mat. Res.
Soc. Symp. Proc. Vol. 673, pp P5.3.1-P5.3.6 (2001).
3. R. Woll, P. Moran, E. M. Rehder, B. Yang, T. F. Kuech, and M. G. Lagally, “Strain
Relaxation in SiGe Thin Films Studied by Low-Energy Electron Microscopy” Mater.
Res. Soc. Symp. Proc. Vol. 696, pp119 (2001).
4. E. M. Rehder, C. K. Inoki, T. S. Kuan, T. F. Kuech, “SiGe relaxation on silicon-on-
insulator substrates: An experimental and modeling study”, J. Appl. Phys., Vol. 94, No.
12, pp. 7892-7903 (2003)
5. R. E. Welser, R. S. Setzko, K. S. Stevens, E. M. Rehder, C. R. Lutz, D. S. Hill, and P. J.
Zampardi, “Minority carrier properties of carbon-doped GaInAsN bipolar transistors”, J.
Phys.: Condens. Matter, vol. 16, pp. S3373-S3385, Aug. 2004.
6. E. M. Rehder, S. Iyer, C. R. Lutz, K. S. Stevens, T. L. Wolfsdorf-Brenner, R. W. Welser,
“X-ray of High Order Planes, Pathway for HBT Control”, Proceedings of the Compound
Semiconductor Manufacturing Technology Conference, 2004.
7. E. M. Rehder, C. R. Lutz, R. E. Welser, P. J. Zampardi, “Experimental Probe of Minority
Carrier Velocity Profile”, Proceedings of the IEEE GaAs Integrated Circuits Conference,
pp. 75-79 (2004)
8. E.M. Rehder, C. Cismaru, P.J. Zampardi, R.E. Welser, “Novel Base Doping Profile For
Improved Speed and Power”, Proceedings of the European Microwave Conference 2005.
9. E. M. Rehder, P. Rice, K.S. Stevens, C.R. Lutz, “Overcoming Difficulties in
Photoreflectance Measurements on Product HBTs”, Proceedings of the Compound
Semiconductor Manufacturing Technology Conference 2006

5. 10. E.M. Rehder, C.R. Lutz, and K.S. Stevens, “Uniformity Capabilities of Latest Growth
Systems for HBT Production”, Compound Semiconductor Manufacturing Technology
Conference 2009.
11. Rehder, Eric, Charles Lutz, and Kevin Stevens. "Challenges to III-V Epi Growth for
Increased Performance and Functionality Required in Advanced Wireless Devices." ECS
Transactions 33, no. 13 (2010): 129-139.
12. R. R. King,
D. Bhusari, D. Larrabee, X.-Q. Liu, E. Rehder, K. Edmondson, H. Cotal, R.
K. Jones, J. H. Ermer, C. M. Fetzer, D. C. Law and N. H. Karam, “Solar cell generations
over 40% efficiency”, Progress in Photovoltaics, Vol. 20, Issue 6, p801-815, 2012
13. X.Q. Liu, C.M. Fetzer, E. Rehder, H. Cotal, S. Mesropian, D. Law, R.R. King,
“Organometallic vapor phase epitaxy growth of upright metamorphic multijunction solar
cells”, J. Crystal Growth, Vol 352, Issue 1, p186-189, 2012.
14. Youngers, M., P. Rice, G. Yeboah, E. Rehder, O. Laboutin, K. S. Stevens, and W.
Johnson. "An In-Situ Reflectance Implementation for High Volume Electronic Device
Epitaxial Wafer Production." Compound Semiconductor Manufacturing Technology
Conference 2012.
15. Boisvert, J., D. Law, R. King, E. Rehder, P. Chiu, D. Bhusari, C. Fetzer et al. “High
efficiency Inverted Metamorphic (IMM) solar cells”"Spectrolab, Inc. 12500 Gladstone
Ave., Sylmar, CA 91342 USA." In Photovoltaic Specialists Conference (PVSC), 2013
IEEE 39th, pp. 2790-2792. IEEE, 2013.
16. King, Richard R., Chris Fetzer, Philip Chiu, Eric Rehder, Ken Edmondson, and Nasser
Karam. "(Invited) Group-IV Subcells in Multijunction Concentrator Solar Cells." ECS
Transactions 50, no. 9 (2013): 287-295.
17. E. M. Rehder, B. Jun, P. Chiu, S. Wierman, K. Edmondson, X.-Q. Liu, S. Mesropian, P.
Pien, J. Boisvert, N. H. Karam, “Environmental testing of inverted metamorphic solar
cells for space”, IEEE 40th
Photovoltaic Specialist Conference, 2014.
Conference Presentations:
1. E.M. Rehder, R. Edgington, S.D. Graul, 1994 National Meeting of the American
Chemical Society
2. Eric Rehder, M. Zhou, L. Zhang, N. R. Perkins, S. E. Babcock, T. F. Kuech, “Structure of
AlN on Si (111) Deposited with Metalorganic Vapor Phase Epitaxy”, Fall 1998
Conference of the Materials Research Society
3. E.M. Rehder, P.D. Moran, D.M. Hansen, M.G. Lagally, T.F. Kuech, “Application of
Pyrometry to Silicon on Insulator Substrates”, Spring 1999 Conference of the Materials
Research Society
4. E.M. Rehder, D.E. Savage, P.D. Moran, M.G. Lagally, T.F. Kuech, C.K. Inoki, T.S.
Kuan, “Relaxation of SiGe Films on Silicon-on-Insulator Substrates Utilizing
Borosilicate Glass” 2000 Conference of the American Vacuum Society
5. E.M. Rehder, D.E. Savage, P.D. Moran, M.G. Lagally, T.F. Kuech, C.K. Inoki, T.S.
Kuan, “SiGe Relaxation on Silicon-on-Insulator Substrates” 2000 International
Symposium on Compound Semiconductor

6. 6. E.M. Rehder, D.E. Savage, P.D. Moran, M.G. Lagally, T.F. Kuech, “Relaxation of SiGe
Films Grown on SOI Substrates”, 2000 Electronic Materials Conference
7. E.M. Rehder, T.F. Kuech, T.S. Kuan, “Mechanism for the Reduction of Threading
Dislocation Densities in SiGe Films on SOI”, 2001 Spring Conference of the Materials
Research Society
8. E. M. Rehder, T.F. Kuech, “Emissivity and Sample Temperature Variations During
Growth on Silicon on Insulator Substrates”, 2001 Electronic Materials Conference
9. E.M. Rehder, T.F. Kuech, C.K. Inoki, T.S. Kuan, “Mechanism for the Reduction of
Threading Dislocation Densities in SiGe Films on SOI”, 2001 Electronic Materials
Conference
10. E.M. Rehder, T.F. Kuech, C.K. Inoki, T.S. Kuan, “Dislocation Dynamics of SiGe Film
Relaxation on Silicon on Insulator Substrates”, Thirteenth American Conference on
Crystal Growth and Epitaxy 2001
11. E.M. Rehder, T.F. Kuech, “Real Sample Temperature Oscillations of 60°C During
Deposition on Silicon on Insulator Substrates”, 2001 International Conference on Crystal
Growth
12. E.M. Rehder, T.F. Kuech, C.K. Inoki, T.S. Kuan, “Improved Relaxation of SiGe Films
with Silicon on Insulator Substrates”, 2001 International Conference on Crystal Growth
13. A.R. Woll, P. Moran, E.M. Rehder, B. Yang, T.F. Kuech, M.G. Lagally, “Strain
Relaxation in SiGe Thin Films Studied by Low-Energy Electron Microscopy”, Fall 2001
Conference of the Materials Research Society
14. E.M. Rehder, A.R. Woll, M. Roberts, M.G. Lagally, T.F. Kuech, C.K. Inoki, T.S. Kuan,
“Relaxed SiGe on Silicon on Insulator Substrates”, Fall 2001 Conference of the Materials
Research Society
15. E.M. Rehder, C.R. Lutz, and R. E. Welser, and P. J. Zampardi, “Experimental Probe of
Minority Carrier Velocity Profile”, IEEE GaAs Integrated Circuits Conference
16. E. M. Rehder, S. Iyer, C. R. Lutz, K. S. Stevens, T. L. Wolfsdorf-Brenner, R. W. Welser,
“X-ray of High Order Planes, Pathway for HBT Control”, Compound Semiconductor
Manufacturing Technology Conference 2004
17. E. M. Rehder, P. J. Zampardi, and R. E. Welser, “Novel Base Doping Profile For
Improved Speed and Power”, European Microwave Conference 2005
18. E. M. Rehder and P. Rice, “Reduced Interference Photoreflectance Measurements of
HBTs”, Electronic Materials Conference 2006
19. E. M. Rehder, P. Rice, K.S. Stevens, C.R. Lutz, “Overcoming Difficulties in
Photoreflectance Measurements on Product HBTs”, Compound Semiconductor
Manufacturing Technology Conference 2006
20. E. M. Rehder, R. E. Welser, “Strain Balancing in Heterojunction Bipolar Transistors”,
Workshop on Metastable Compound Semiconductor Systems and Heterostructures, 2006
21. E.M. Rehder, W. Stolz, K. Volz, R.E. Welser “Controlling Film Relaxation in InGaAsN
Heterojunction Bipolar Transistors”, 2007 Workshop on Organometallic Vapor Phase
Epitaxy

7. 22. E. M. Rehder, “Controlling Defect in HBTs”, Seminar at the Fraunhoffer Institute (IAF)
2008
23. King, Richard R., Chris Fetzer, Philip Chiu, Eric Rehder, Ken Edmondson, and Nasser
Karam. "Group-IV Subcells in Multijunction Concentrator Solar Cells." In Meeting
Abstracts, no. 43, pp. 3130-3130. The Electrochemical Society, 2012.
24. Daniel C. Law ; J. C. Boisvert ; E. M. Rehder ; P. T. Chiu ; S. Mesropian ; R. L. Woo ; X.
Q. Liu ; W. D. Hong ; C. M. Fetzer ; S. B. Singer ; D. M. Bhusari ; K. M. Edmondson ;
A. Zakaria ; B. Jun ; D. D. Krut ; R. R. King ; S. K. Sharma ; N. H. Karam, " Recent
progress of Spectrolab high-efficiency space solar cells ", Proc. SPIE 8876,
Nanophotonics and Macrophotonics for Space Environments VII, 88760Y (September
24, 2013); doi:10.1117/12.2026756
25. J.C. Boisvert, E. M. Rehder, et al “Next-Generation Space Solar Cells”, SPIE Optics and
Photonics, 2014
26. E. M. Rehder, et al “High Efficiency IMM Space Solar Cells and Integration with
Silicon”, Boeing Technical Excellence Conference, 2015.