This document contains a device modeling report for a Junction Field Effect Transistor (JFET) with part number 2N4416 manufactured by Vishay Siliconix. It includes the JFET model parameters, graphs comparing simulated and measured characteristics, and evaluation of the JFET model in circuit simulations.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Junction Field Effect Transistor (JFET)
PART NUMBER: 2N4416
MANUFACTURER: Vishay Siliconix

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
*$
* PART NUMBER: 2N4416
* MANUFACTURER: Vishay Siliconix
* V(BR)GSS=-30V, VGS(off)=-6, IDSS=5
* All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
.MODEL J2N4416 NJF
+ VTO=-2.7100
+ BETA=2.3142E-3
+ LAMBDA=6.1234E-3
+ IS=26.946E-15
+ ISR=269.46E-15
+ NR=24.184
+ ALPHA=731.48E-6
+ VK=90.255
+ RD=60
+ RS=60
+ CGD=2.0057E-12
+ CGS=2.0057E-12
+ M=.27694
+ PB=.55317
+ KF=1.4304E-15
+ AF=1.7331
+ BETATCE=-.5
+ VTOTC=-2.5000E-3
*$
Spice Model
Q1
J2N4416

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
PSpice
model
parameter
Model description
BETA Transconductance coefficient
RD Drain resistance
RS Source resistance
BETATCE Temperature coefficient for BETA
LAMBDA Channel-length modulation
VTO Threshold voltage
VTOTC Temperature coefficient for VTO
CGD Zero-bias gate-drain capacitance
M Junction grading factor
PB Built-in potential
FC Forward-bias coefficient
CGS Zero-bias gate-source capacitance
ISR Recombination current saturation value
NR Recombination current emission coefficient
IS Junction saturation current
N Junction emission coefficient
XTI IS temperature coefficient
ALPHA Impact ionization coefficient
VK Ionization “knee” voltage
KF Flicker noise coefficient
AF Flicker noise exponent

4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Transconductance Characteristic
Measurement
Simulation

5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Transfer Curve Characteristic
Circuit Simulation Result
Evaluation Circuit
V1
0Vdc
0
Q1
J2N4416
V2
10Vdc

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Comparison Graph
Circuit Simulation Result
Simulation Result
VGS (V)
ID (mA)
Measurement Simulation
Error (%)
8.6 -0.3 -0.31 -3.333
7.1 -0.6 -0.60127 -0.211
5.6 -0.9 -0.873302 -2.966
4.2 -1.2 -1.169 -2.583
3 -1.5 -1.4467 -3.553
2.1 -1.75 -1.7 -2.857

7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Reverse Transfer Capacitance
Circuit Simulation Result
Evaluation Circuit
Q1
J2N4416
0
V4
0Vdc
V2
TD = 0
TF = 10n
PW = 5u
PER = 10u
V1 = 0
TR = 10n
V2 = 20

8. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Comparison Graph
Circuit Simulation Result
Simulation Result
Crss (pF)
VGS (V)
Measurement Simulation
Error(%)
-1 1.55 1.62 4.516
-2 1.33 1.36 2.255
-5 1.05 1.0715 2.047
-10 0.9 0.89 1.111

9. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Input Capacitance
Circuit Simulation Result
Evaluation Circuit
Q1
J2N4416
0
V4
0Vdc
V2
TD = 0
TF = 10n
PW = 5u
PER = 10u
V1 = 0
TR = 10n
V2 = 20

10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Comparison Graph
Circuit Simulation Result
Simulation Result
Crss (pF)
VGS (V)
Measurement Simulation
Error(%)
-1 3.1 3.2433 4.622
-2 2.6 2.73 5
-5 2 2.1 5
-10 1.7 1.7819 4.817

11. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Passive Gate Leakage
Circuit Simulation Result
Evaluation Circuit
Vds
0Vdc
Vgs
0Vdc
0
Q1
J2N4416

12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Comparison Graph
Circuit Simulation Result
Simulation Result
Igss (pA)
VDS (V)
Measurement Simulation
Error(%)
1 0.6 0.615 2.5
2 0.9 0.877 2.555
5 1.1 1.1052 0.472

13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Active Gate Leakage
Circuit Simulation Result
Evaluation Circuit
IG (pA)VDG=10V,ID=1mA
(Test Conditions) Measurement Simulation
Error(%)
Gate Operating
Current(IG)
-20 -20.5 2.5
Vds
0Vdc
0
Q1
J2N4416
Vgs
-2.01Vdc