SPICE MODEL of 2SK3770-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Standard)
PART NUMBER: 2SK3770-01MR
MANUFACTURER: Fuji Electric
REMARK: Body Diode (Standard)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. POWER MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 4.53 4.7 3.7528
2 6.5 6.64 2.1538
5 10.25 10.11 -1.366
6 11 10.97 -0.273
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
V2
0Vdc
V1 U1 V3
10Vdc 2SK3770-01MRS
25Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.2 4.955 5.05 1.9173
0.5 5.14 5.21 1.3619
1 5.3 5.33 0.566
2 5.51 5.514 0.0726
5 5.9 5.88 -0.339
6 5.97 5.976 0.1005
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Id-Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
V2
0Vdc
U1 V3
V1 2SK3770-01MRS
0Vdc
10.0Vdc
0
Simulation Result
ID=13, VGS=10V Measurement Simulation Error (%)
R DS (on) 63 m 63 m 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
V2
0Vdc
Dbreak
PER = 1000u D1
PW = 600u U1 I2
TF = 10n W1 2SK3770-01MRS 26Adc
TR = 10n +
TD = 0
I2 = 100m
-
I1 W
I1 = 0 IOFF = 1mA V1
ION = 0uA 60Vdc
0
Simulation Result
VDD=60V,ID=26A Measurement Simulation Error (%)
Qgs 10 nC 10.35 nC 3.5
Qgd 9 nC 9.034 nC 0.38
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 1050 1051 0.095
0.2 1040 1035 0.480
0.5 990 991 0.101
1 930 928 0.215
2 820 829 1.097
5 650 646 0.615
10 500 497 0.6
20 360 360 0
50 220 221 0.454
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Switching Time Characteristic
Circuit Simulation result
VDS =150 (V)
VGS = 10V
Evaluation circuit
L1 RL
3
0.05uH 15.7
V3
0Vdc
VDD
150Vdc
L2 RG
2
0.03uH
12 U3
V1 = 0 V1 IRFB9N30AS 0
V2 = 10
TD = 1u
TR = 6n
TF = 7n
PW = 3u
PER = 100u
0 0
Simulation Result
ID=9.3A, VDD=150V
Measurement Simulation Error(%)
VGS=0/10V
td (on) 10 ns 10.07 ns 0.7
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Output Characteristic
Circuit Simulation result
5.7V
5.6V
VGS=5.5V
Evaluation circuit
V2
0Vdc
U1 V3
V1 2SK3770-01MRS
0Vdc
10.0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Forward Current Characteristic of Reverse Diode
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
V2
2SK3770-01MRS
U1
0Vdc
V3
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.00102 0.524 0.525 0.19
0.00207 0.544 0.5445 0.0919
0.00503 0.568 0.568 0
0.0099 0.588 0.587 0.17
0.0203 0.606 0.606 0
0.0504 0.632 0.630 0.316
0.103 0.65 0.649 0.153
0.2 0.668 0.668 0
0.5 0.691 0.693 0.289
1 0.712 0.712 0
2 0.734 0.7335 0.068
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
50
2S K3 77 0-01 MRS
U1
V1 = -9 .4 V1
V2 = 10 .7
TD = 0
TR = 10 n
TF = 10 n
PW = 2 0u
PE R = 50 u
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr=trj+trb 294 ns 294.69 ns 0.235
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

15. Reverse Recovery Characteristic Reference
Trj=162(ns)
Trb=132(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005