The document presents a device modeling report for a general-purpose rectifier diode (1SR156-400) by ROHM, detailing various electrical parameters and circuit simulation results. It includes forward current characteristics, capacitance characteristics, and reverse recovery characteristics, with performance measurements and corresponding simulation results highlighting their accuracy. All content is copyright protected by Bee Technologies Inc.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER / PROFESSIONAL
PART NUMBER: 1SR156-400
MANUFACTURER: ROHM
REMARK: TC=110C
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

3. Forward Current Characteristic Reference
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

4. Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
V1
0Vdc U1
D1SR156-400_110C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.01 0.496 0.496 0.00
0.02 0.556 0.553 0.54
0.05 0.632 0.633 -0.16
0.1 0.702 0.703 -0.14
0.2 0.774 0.771 0.39
0.5 0.898 0.897 0.11
1 1.022 1.022 0.00
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

6. Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
V2
0Vdc
V2 = 400V V1
V1 = 0 U1
TD = 0
TR = 1us
TF = 10ns
PW = 5us
PER = 10us D1SR156-400_110C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF) Cj(pF)
Vrev(V) %Error
Measurement Simulation
0 18.806 18.806 0.00
0.1 17.293 17.479 -1.08
0.2 16.346 15.908 2.68
0.5 14.391 14.417 -0.18
1 12.700 12.706 -0.05
2 10.896 10.794 0.94
5 8.614 8.592 0.26
10 7.042 6.948 1.33
20 5.666 5.674 -0.14
50 4.202 4.322 -2.86
100 3.389 3.420 -0.91
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

8. Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
50
V2 = 10.8V V1
V1 = -9.25V U1
TD = 0
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us D1SR156-400_110C
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj 60.0 ns 59.6 ns 0.66
trb 300.0 ns 303.0 ns 1.00
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

9. Reverse Recovery Characteristic Reference
Measurement
Trj =60(ns)
Trb=300(ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004