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Si Nanowire Based Solar Cells
Submitted By:
Urvi Sharma
(13ESKEC086)
Submitted to:
Mr. Rahul Pandey
What is a Solar Cell ? • A device that converts solar
energy directly to electricity
by photovoltaic effect:
• It supplies voltage and
current to a resistive load
• It supplies DC power
• Size 10x10 cm :size of a CD
• Thickness is in fractions of
mm
• Metal pattern is to make
electrical contacts.
Solar Cells are:
• Safe
• Clean
• Durable
• Reliable
• Quiet
• Installable anywhere
Energy conversion in a Solar Cell
• Light is shone
• Electrons are knocked
out
• Electrons and holes
move in opposite
directions
• Electrical output is
generated between the
contacts
Current Technology: Photovoltaic Cells
Light in, electricity out !
• If energy of the incident
photons equals or exceeds
the band gap of the material,
then electrons move from
valence band to conduction
band.
• They are susceptible to
electric field and form
electricity.
The Drawback
• Not all energy is converted back.
• Solar cells can only absorb a certain wavelengths.
• Light that isn't absorbed is either reflected back or transmitted
through.
• Less efficient and high manufacturing cost.
• They do not work on cloudy days or low sunlight conditions.
Nanowires
Reference: Eric C Gamett Et Al, Annual Rev. Mater. Res. 2011, Nanowire Solar Cells
Si Nanowire
Tiny PV cells:
Composed of three layers:
i. Inner P-region
ii. Intrinsic or pure Si
iii. Outer N-region
Si Nanowire Properties
Increased Surface Area:
• Very narrow pointed structures.
• Diameter in nanometers
• Length in micrometers.
• Greater area made of p-n junctions is exposed to sunlight
• Increases absorptivity.
• Reduced size
Si Nanowire Properties
• Reduced Reflectivity
• Efficient electron transport
• Reduced recombination
• Light Trapping:
Light falling on the substrate gets reflected and once again gets
absorbed by silicon nanowires.
• No lattice Mismatch.
Si Nanowire Properties
Recombination:
• Poor efficiency is due to recombination within the bulk silicon element.
• Photon strikes the p-n junction in bulk silicon. Produces an electron-
hole pair.
• Electron an hole must travel along the wire to produce current.
Si Nanowire Properties
Reduced Recombination in SiNW:
• Small diameters
• SiNW’s grown vertical, perpendicular to the surface of substrate
• Electrons strikes the surface
• Distance of hole/electron travel is minimized
• Distance is the order of nanometers
Fabrication Of
Nanowires
Techniques Of Fabrication
● Spontaneous Growth
○ Evaporation Condensation
○ Dissolution Condensation
○ VLS Method
○ Stress induced
recrystallization
● Template Based Synthesis
○ Electrochemical Deposition
○ Colloidal Dispersion
● Lithography (top down method)
● Electro spinning
Fabrication: VLS Growth of Nanowire
• VLS stands for Vapour-Liquid-Solid
• It is a method for growth of 1-D structures like Nanowires from
chemical vapor deposition
• The name VLS mechanism reflects the pathway of silicon, which
coming from the vapor phase diffuses through the liquid droplet and
ends up as a solid Si wire
• It is driven in the presence of a catalyst whose presence
accelerates the reaction without taking part in it.
Basic Principle: VLS Method
• A foil or powder of group III metal
(Ga,In, Al) is heated in presence of
nitrogen or NH3 at temperature
suitable for vaporising of source
and dissociation of the nitride gas.
• Catalyst: transition metals like Fe,Ni
or Co and their oxides or noble
metals like Au and Ag
Reference: Selective growth of Si Nanowire, Lingling Ren, Hongmei Li and Liandi Ma, 2011
• Catalyst forms a liquid droplet by
itself.
• It acts as a trap for growth species.
• Growth species is evaporated first
then diffuses and dissolves into
liquid droplet
• It precipitated between liquid and
substrate interface
Steps of VLS Growth Mechanism
Si Nanowires using VLS Mechanism
• A thin film(1-10nm) off catalyst (Au or
Ag) is deposited onto a wafer
substrate(Si) by sputter deposition or
thermal evaporation or any other
suitable method.
• Then the growth metal is heated to
evaporate. The vapor is absorbed by
molten catalytic droplet which becomes
supersaturated and gets precipitated to
the bottom and forms AuSi.
Reference: Semiconductor Nanowire Growth and Integration, Next-Generation Electronics to Sustainable Energy, 2014, pp. 1-53
• As the melting point of AuSi is greater than 2500℃ which is much higher
than reaction temperature(1200℃) so it grows on Si substrate in a
hexagonal crystal structure.
Reference: Fabrication of Nanowire Tubes using VLS mechanism, Magnus Willander, QingXiang Zhao, and Omer Nur, 2007 Newsroom
Reference: Silicon nanowires as viewed through a scanning electron microscope, Nanotechweb.org.
Requirements for VLS growth
• The catalyst must be able to form liquid solution.
• The catalyst must be inert and should not react with the metal solid.
• For controlled unidirectional growth , the solid-liquid interface must be
well defined crystallographically.
• The interfacial energy plays a very important role.
Features of Fabricated Device
• NW Core Diameter: 80-100 nm.
• Shell Thickness: 400 nm.
• Shell layer thick enough to completely cover the core
• Reduces sheet resistance.
• Shell doping higher; Depletion region expected mainly in
crystalline NW core.
• Average wire density: 2*1018/cm2
Si Nanowire Based Solar Cell
Reference: Diagram of the silicon nanowire/P3HT photovoltaic cell structure, Portland State University, Nanoelcectronics, www.pdu.edx.com
Benefits of Nanowire geometry
Reference: Benefits of the nanowire geometry. Erik C. Garnett, Mark L. Brongersma, Yi Cui and Michael D. McGehee
Benefits of the nanowire geometry.
• Periodic arrays of nanowires with radial junctions maintain all the advantages
including
• reduced reflection,
• extreme light trapping,
• single-crystalline synthesis on nonepitaxial substrates.
• Axial junctions lose the radial charge separation benefit but keep the others.
• Substrate junctions lack the radial charge separation benefit and cannot be
removed from the substrate to be tested as single-nanowire solar cells.
Remaining Challenges And Future Outlook
• Solar cells are less expensive and use fewer natural resources.
• The radial junction nanowire geometry,opening up the possibility to
use a small amount of abundant,nontoxic,low-cost material to make
solar cells with performance close to that of current planar technology
• The ability to make single-crystalline nanowires on low-cost
substrates such as aluminum foil and to relax strain in subsequent
epitaxial layers removes two more major cost hurdles associated with
high-efficiency planar solar cells.
Thank You

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Si Nanowire based Solar Cell

  • 1. Si Nanowire Based Solar Cells Submitted By: Urvi Sharma (13ESKEC086) Submitted to: Mr. Rahul Pandey
  • 2. What is a Solar Cell ? • A device that converts solar energy directly to electricity by photovoltaic effect: • It supplies voltage and current to a resistive load • It supplies DC power • Size 10x10 cm :size of a CD • Thickness is in fractions of mm • Metal pattern is to make electrical contacts.
  • 3. Solar Cells are: • Safe • Clean • Durable • Reliable • Quiet • Installable anywhere
  • 4. Energy conversion in a Solar Cell • Light is shone • Electrons are knocked out • Electrons and holes move in opposite directions • Electrical output is generated between the contacts
  • 5. Current Technology: Photovoltaic Cells Light in, electricity out ! • If energy of the incident photons equals or exceeds the band gap of the material, then electrons move from valence band to conduction band. • They are susceptible to electric field and form electricity.
  • 6. The Drawback • Not all energy is converted back. • Solar cells can only absorb a certain wavelengths. • Light that isn't absorbed is either reflected back or transmitted through. • Less efficient and high manufacturing cost. • They do not work on cloudy days or low sunlight conditions.
  • 7. Nanowires Reference: Eric C Gamett Et Al, Annual Rev. Mater. Res. 2011, Nanowire Solar Cells
  • 8. Si Nanowire Tiny PV cells: Composed of three layers: i. Inner P-region ii. Intrinsic or pure Si iii. Outer N-region
  • 9. Si Nanowire Properties Increased Surface Area: • Very narrow pointed structures. • Diameter in nanometers • Length in micrometers. • Greater area made of p-n junctions is exposed to sunlight • Increases absorptivity. • Reduced size
  • 10. Si Nanowire Properties • Reduced Reflectivity • Efficient electron transport • Reduced recombination • Light Trapping: Light falling on the substrate gets reflected and once again gets absorbed by silicon nanowires. • No lattice Mismatch.
  • 11. Si Nanowire Properties Recombination: • Poor efficiency is due to recombination within the bulk silicon element. • Photon strikes the p-n junction in bulk silicon. Produces an electron- hole pair. • Electron an hole must travel along the wire to produce current.
  • 12. Si Nanowire Properties Reduced Recombination in SiNW: • Small diameters • SiNW’s grown vertical, perpendicular to the surface of substrate • Electrons strikes the surface • Distance of hole/electron travel is minimized • Distance is the order of nanometers
  • 14. Techniques Of Fabrication ● Spontaneous Growth ○ Evaporation Condensation ○ Dissolution Condensation ○ VLS Method ○ Stress induced recrystallization ● Template Based Synthesis ○ Electrochemical Deposition ○ Colloidal Dispersion ● Lithography (top down method) ● Electro spinning
  • 15. Fabrication: VLS Growth of Nanowire • VLS stands for Vapour-Liquid-Solid • It is a method for growth of 1-D structures like Nanowires from chemical vapor deposition • The name VLS mechanism reflects the pathway of silicon, which coming from the vapor phase diffuses through the liquid droplet and ends up as a solid Si wire • It is driven in the presence of a catalyst whose presence accelerates the reaction without taking part in it.
  • 16. Basic Principle: VLS Method • A foil or powder of group III metal (Ga,In, Al) is heated in presence of nitrogen or NH3 at temperature suitable for vaporising of source and dissociation of the nitride gas. • Catalyst: transition metals like Fe,Ni or Co and their oxides or noble metals like Au and Ag Reference: Selective growth of Si Nanowire, Lingling Ren, Hongmei Li and Liandi Ma, 2011
  • 17. • Catalyst forms a liquid droplet by itself. • It acts as a trap for growth species. • Growth species is evaporated first then diffuses and dissolves into liquid droplet • It precipitated between liquid and substrate interface Steps of VLS Growth Mechanism
  • 18. Si Nanowires using VLS Mechanism • A thin film(1-10nm) off catalyst (Au or Ag) is deposited onto a wafer substrate(Si) by sputter deposition or thermal evaporation or any other suitable method. • Then the growth metal is heated to evaporate. The vapor is absorbed by molten catalytic droplet which becomes supersaturated and gets precipitated to the bottom and forms AuSi. Reference: Semiconductor Nanowire Growth and Integration, Next-Generation Electronics to Sustainable Energy, 2014, pp. 1-53
  • 19. • As the melting point of AuSi is greater than 2500℃ which is much higher than reaction temperature(1200℃) so it grows on Si substrate in a hexagonal crystal structure. Reference: Fabrication of Nanowire Tubes using VLS mechanism, Magnus Willander, QingXiang Zhao, and Omer Nur, 2007 Newsroom
  • 20. Reference: Silicon nanowires as viewed through a scanning electron microscope, Nanotechweb.org.
  • 21. Requirements for VLS growth • The catalyst must be able to form liquid solution. • The catalyst must be inert and should not react with the metal solid. • For controlled unidirectional growth , the solid-liquid interface must be well defined crystallographically. • The interfacial energy plays a very important role.
  • 22. Features of Fabricated Device • NW Core Diameter: 80-100 nm. • Shell Thickness: 400 nm. • Shell layer thick enough to completely cover the core • Reduces sheet resistance. • Shell doping higher; Depletion region expected mainly in crystalline NW core. • Average wire density: 2*1018/cm2
  • 23. Si Nanowire Based Solar Cell Reference: Diagram of the silicon nanowire/P3HT photovoltaic cell structure, Portland State University, Nanoelcectronics, www.pdu.edx.com
  • 24. Benefits of Nanowire geometry Reference: Benefits of the nanowire geometry. Erik C. Garnett, Mark L. Brongersma, Yi Cui and Michael D. McGehee
  • 25. Benefits of the nanowire geometry. • Periodic arrays of nanowires with radial junctions maintain all the advantages including • reduced reflection, • extreme light trapping, • single-crystalline synthesis on nonepitaxial substrates. • Axial junctions lose the radial charge separation benefit but keep the others. • Substrate junctions lack the radial charge separation benefit and cannot be removed from the substrate to be tested as single-nanowire solar cells.
  • 26. Remaining Challenges And Future Outlook • Solar cells are less expensive and use fewer natural resources. • The radial junction nanowire geometry,opening up the possibility to use a small amount of abundant,nontoxic,low-cost material to make solar cells with performance close to that of current planar technology • The ability to make single-crystalline nanowires on low-cost substrates such as aluminum foil and to relax strain in subsequent epitaxial layers removes two more major cost hurdles associated with high-efficiency planar solar cells.