Overview of advantages and fabrication of solar cells made from silicon nanowires. IT includes few slides of conventional solar cells and benefits of using silicon nanowire.
Six Myths about Ontologies: The Basics of Formal Ontology
Si Nanowire based Solar Cell
1. Si Nanowire Based Solar Cells
Submitted By:
Urvi Sharma
(13ESKEC086)
Submitted to:
Mr. Rahul Pandey
2. What is a Solar Cell ? • A device that converts solar
energy directly to electricity
by photovoltaic effect:
• It supplies voltage and
current to a resistive load
• It supplies DC power
• Size 10x10 cm :size of a CD
• Thickness is in fractions of
mm
• Metal pattern is to make
electrical contacts.
4. Energy conversion in a Solar Cell
• Light is shone
• Electrons are knocked
out
• Electrons and holes
move in opposite
directions
• Electrical output is
generated between the
contacts
5. Current Technology: Photovoltaic Cells
Light in, electricity out !
• If energy of the incident
photons equals or exceeds
the band gap of the material,
then electrons move from
valence band to conduction
band.
• They are susceptible to
electric field and form
electricity.
6. The Drawback
• Not all energy is converted back.
• Solar cells can only absorb a certain wavelengths.
• Light that isn't absorbed is either reflected back or transmitted
through.
• Less efficient and high manufacturing cost.
• They do not work on cloudy days or low sunlight conditions.
8. Si Nanowire
Tiny PV cells:
Composed of three layers:
i. Inner P-region
ii. Intrinsic or pure Si
iii. Outer N-region
9. Si Nanowire Properties
Increased Surface Area:
• Very narrow pointed structures.
• Diameter in nanometers
• Length in micrometers.
• Greater area made of p-n junctions is exposed to sunlight
• Increases absorptivity.
• Reduced size
10. Si Nanowire Properties
• Reduced Reflectivity
• Efficient electron transport
• Reduced recombination
• Light Trapping:
Light falling on the substrate gets reflected and once again gets
absorbed by silicon nanowires.
• No lattice Mismatch.
11. Si Nanowire Properties
Recombination:
• Poor efficiency is due to recombination within the bulk silicon element.
• Photon strikes the p-n junction in bulk silicon. Produces an electron-
hole pair.
• Electron an hole must travel along the wire to produce current.
12. Si Nanowire Properties
Reduced Recombination in SiNW:
• Small diameters
• SiNW’s grown vertical, perpendicular to the surface of substrate
• Electrons strikes the surface
• Distance of hole/electron travel is minimized
• Distance is the order of nanometers
15. Fabrication: VLS Growth of Nanowire
• VLS stands for Vapour-Liquid-Solid
• It is a method for growth of 1-D structures like Nanowires from
chemical vapor deposition
• The name VLS mechanism reflects the pathway of silicon, which
coming from the vapor phase diffuses through the liquid droplet and
ends up as a solid Si wire
• It is driven in the presence of a catalyst whose presence
accelerates the reaction without taking part in it.
16. Basic Principle: VLS Method
• A foil or powder of group III metal
(Ga,In, Al) is heated in presence of
nitrogen or NH3 at temperature
suitable for vaporising of source
and dissociation of the nitride gas.
• Catalyst: transition metals like Fe,Ni
or Co and their oxides or noble
metals like Au and Ag
Reference: Selective growth of Si Nanowire, Lingling Ren, Hongmei Li and Liandi Ma, 2011
17. • Catalyst forms a liquid droplet by
itself.
• It acts as a trap for growth species.
• Growth species is evaporated first
then diffuses and dissolves into
liquid droplet
• It precipitated between liquid and
substrate interface
Steps of VLS Growth Mechanism
18. Si Nanowires using VLS Mechanism
• A thin film(1-10nm) off catalyst (Au or
Ag) is deposited onto a wafer
substrate(Si) by sputter deposition or
thermal evaporation or any other
suitable method.
• Then the growth metal is heated to
evaporate. The vapor is absorbed by
molten catalytic droplet which becomes
supersaturated and gets precipitated to
the bottom and forms AuSi.
Reference: Semiconductor Nanowire Growth and Integration, Next-Generation Electronics to Sustainable Energy, 2014, pp. 1-53
19. • As the melting point of AuSi is greater than 2500℃ which is much higher
than reaction temperature(1200℃) so it grows on Si substrate in a
hexagonal crystal structure.
Reference: Fabrication of Nanowire Tubes using VLS mechanism, Magnus Willander, QingXiang Zhao, and Omer Nur, 2007 Newsroom
21. Requirements for VLS growth
• The catalyst must be able to form liquid solution.
• The catalyst must be inert and should not react with the metal solid.
• For controlled unidirectional growth , the solid-liquid interface must be
well defined crystallographically.
• The interfacial energy plays a very important role.
22. Features of Fabricated Device
• NW Core Diameter: 80-100 nm.
• Shell Thickness: 400 nm.
• Shell layer thick enough to completely cover the core
• Reduces sheet resistance.
• Shell doping higher; Depletion region expected mainly in
crystalline NW core.
• Average wire density: 2*1018/cm2
23. Si Nanowire Based Solar Cell
Reference: Diagram of the silicon nanowire/P3HT photovoltaic cell structure, Portland State University, Nanoelcectronics, www.pdu.edx.com
24. Benefits of Nanowire geometry
Reference: Benefits of the nanowire geometry. Erik C. Garnett, Mark L. Brongersma, Yi Cui and Michael D. McGehee
25. Benefits of the nanowire geometry.
• Periodic arrays of nanowires with radial junctions maintain all the advantages
including
• reduced reflection,
• extreme light trapping,
• single-crystalline synthesis on nonepitaxial substrates.
• Axial junctions lose the radial charge separation benefit but keep the others.
• Substrate junctions lack the radial charge separation benefit and cannot be
removed from the substrate to be tested as single-nanowire solar cells.
26. Remaining Challenges And Future Outlook
• Solar cells are less expensive and use fewer natural resources.
• The radial junction nanowire geometry,opening up the possibility to
use a small amount of abundant,nontoxic,low-cost material to make
solar cells with performance close to that of current planar technology
• The ability to make single-crystalline nanowires on low-cost
substrates such as aluminum foil and to relax strain in subsequent
epitaxial layers removes two more major cost hurdles associated with
high-efficiency planar solar cells.