The document presents information on memristors. It discusses the history of memristors, which were proposed in 1971 but not created until 2008. Memristors are two-terminal devices whose resistance depends on the history of current flow. They can be constructed with layers of doped and undoped oxides like TiOx. When a bias voltage is applied, dopants move within the oxide, changing its resistance. This allows memristors to act as switches or be used for non-volatile memory and neural networks.
3. HISTORY:
• Leon Chua proposed the existence of
memristor in 1971.
• In 2008 a team lead by Stanley Williams created the
first memristor.
4. INTRODUCTION:
• MEMRISTOR stands for
MEMory + ResISTOR
• MEMRISTOR can be defined as
“A two terminal device which gives the relation
between magnetic flux and charge”.
• The memristor's electrical resistance is not constant but
depends on the history of current that had previously
flowed through the device.
6. PASSIVE COMPONENTS:
RESISTOR(R)
• Resistor is a device
which opposes the
flow of current.
• Formula will be
• R = V/I
INDUCTOR(L)
• Inductor is a device
that stores energy
in a magnetic
field when electric
current flows
through it.
• Formula will be
• L = ΦB/I
CAPACITOR(C)
• A capacitor is a
device that stores
electrical energy in
an electric field.
• Formula will be
• C = Q/V
7.
8.
9. CONSTRUCTION:
• Memristor consists of two terminals
which are nothing but
electrodes(Platinum) here.
• It consists of two regions namely
doped and undoped.
• These two regions are made up of
some oxides layers
(ex: TiOx , NiOx, CoOx, etc..,).
10. WORKING:
•TiO2 is a semiconductor, and in its pure state it is
highly resistive.
•It can be doped with other elements to make it very
conductive.
• Putting a bias voltage across a thin film of TiO2
semiconductor that has dopants only on one side
causes them to move into the pure TiO2 on the other
side and thus lowers the resistance.
• Running current in the other direction will then push
the dopants back into place, increasing the TiO2 's
resistance.
11. R(TIO2-X ) < R(TIO2 )
•WHEN W=D,
R = LOW
•WHEN W=0,
R = HIGH
12.
13. APPLICATIONS:
•As a switch.
•As a non volatile memory.
•Booting free computers.
•Can perform logic operations.
•In artificial neural networks.
14. CONCLUSION
• It is sure that Memristor is going to revolutionaries in
the 21st century as radically as the transistor in the
20th century.
• But Memristor will have to wait a few years like
transistor which had to wait almost a decade after
it’s invention for its popular applications.
