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2 sa1036

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Jose Castellanos
Jose Castellanos

datasheet de transistor smd

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Elektronische Bauelemente 2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor 31-Dec-2010 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 2 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES IC Max.= -500 mA Low VCE(sat). Ideal for low-voltage operation. CLASSIFICATION OF hFE Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R Range 82~180 120~270 180~390 Marking HP HQ HR PACKAGE INFORMATION Package MPQ LeaderSize SOT-23 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -32 V Emitter to Base Voltage VEBO -5 V Collector Currrent IC -500 mA Total Power Dissipation PD 150 mW Junction & Storage Temperature TJ, TSTG 150, -55 ~ 150 ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO -40 - - V IC=-100μA, IE=0 Collector-emitter breakdown voltage V(BR)CEO -32 - - V IC=-1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO -5 - - V IE=-100μA, IC=0 Collector cut-off current ICBO - - -1 μA VCB=-20V, IE=0 Emitter cut-off current IEBO - - -1 μA VEB= -4V, IC=0 Collector-emitter saturation voltage VCE(sat) - - -0.4 V IC=-100mA, IB=-10mA DC current gain hFE 82 - 390 VCE=-3V, IC=-10mA Transition frequency fT - 200 - MHz VCE=-5V, IC=-20mA, f=100MHz Collector output capacitance COB - 7 - pF VCB=-10V, IE=0, f=1MHz Top View A L C B D G H JF K E 1 2 3 1 2 3 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 SOT-23
Elektronische Bauelemente 2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor 31-Dec-2010 Rev. B Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

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2 sa1036

  • 1. Elektronische Bauelemente 2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor 31-Dec-2010 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 2 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES IC Max.= -500 mA Low VCE(sat). Ideal for low-voltage operation. CLASSIFICATION OF hFE Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R Range 82~180 120~270 180~390 Marking HP HQ HR PACKAGE INFORMATION Package MPQ LeaderSize SOT-23 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -32 V Emitter to Base Voltage VEBO -5 V Collector Currrent IC -500 mA Total Power Dissipation PD 150 mW Junction & Storage Temperature TJ, TSTG 150, -55 ~ 150 ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO -40 - - V IC=-100μA, IE=0 Collector-emitter breakdown voltage V(BR)CEO -32 - - V IC=-1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO -5 - - V IE=-100μA, IC=0 Collector cut-off current ICBO - - -1 μA VCB=-20V, IE=0 Emitter cut-off current IEBO - - -1 μA VEB= -4V, IC=0 Collector-emitter saturation voltage VCE(sat) - - -0.4 V IC=-100mA, IB=-10mA DC current gain hFE 82 - 390 VCE=-3V, IC=-10mA Transition frequency fT - 200 - MHz VCE=-5V, IC=-20mA, f=100MHz Collector output capacitance COB - 7 - pF VCB=-10V, IE=0, f=1MHz Top View A L C B D G H JF K E 1 2 3 1 2 3 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 SOT-23
  • 2. Elektronische Bauelemente 2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor 31-Dec-2010 Rev. B Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES