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Today’s Objectives-  Semiconductor Devices ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Band diagram summary ,[object Object],[object Object],[object Object],[object Object],1.29 InP 0.33 InAs 0.16 InSb (“III-V” compound) 1.14 Si 0.67 Ge E g  (eV) at 273 K Semiconductor Filled  (deep valence) E f Insulator (Al 2 O 3 ) Filled (valence) Empty  (conduction) Band gap Band gap Intrinsic conductivity decreases P type
Summary: Intrinsic vs. Extrinsic (n or p) •  Intrinsic : # electrons = # holes (n = p) --case for pure Si •  Extrinsic : --n ≠ p --occurs when DOPANTS are added with a different # valence electrons than the host (e.g., Si atoms) •  N-type  Extrinsic: (n >> p) •  P-type  Extrinsic: (p >> n)
Conductivity Summary •  Conductors, semiconductors, and insulators... --difference is whether there are accessible energy states for conductance electrons. •  For metals, conductivity increases with less scattering: --reducing deformation. --reducing imperfections. --decreasing temperature. •  For intrinsic semiconductors, conductivity increased by --increasing temperature. •  For doped semiconductors --increasing temperature doesn’t make a difference until T increases sufficiently for intrinsic carriers to dominate. --with increased dopants, mobility decreases (more scattering, same as metals).
Semiconductor Properties Intrinsic SCs:  Conductivity only via thermally induced jumps from the VB to the CB across the band gap.  Extrinsic SCs:  Conductivity due to thermally induced much smaller jumps from the donor level E D  to the CB (n-SC) or from the VB to the acceptor level E A  (p-SC). SCs (intrinsic or extrinsic)  are  lousy conductors  (compared to metals). SCs (intrinsic or extrinsic)  are  lousy electrical insulators  (compared to ceramics and polymers). Typical conductivities: Si (intrinsic) 10 -5  per ohm.cm, Si (doped), 10 -1  to 10 2 , Cu 10 6 , Quartz 10 -19 .
Semiconductor Properties Intrinsic/Extrinsic SCs  cannot be used as electrical wires, too much power loss…  Intrinsic/Extrinsic SCs  cannot be used in charge storage or electrical insulation, too much charge leakage… What are they good for????  Absolutely nothing on their own…   But,   how can a multi-billion $ industry be based on such materials? SC devices exploit asymmetry in the band diagrams at the junction (interface) when differently doped SCs are brought together.
Semiconductor Junctions When materials with dissimilar electrical properties are brought in contact,  a depletion layer  forms at the junction (interface). e- h+
What if we combine  p  and  n  SCs?  DIODE ,[object Object],There is an  asymmetry in the band diagram at the junction.  This asymmetry becomes more pronounced when there is a potential across the semiconductor junction.
Band structures: n and p type semiconductors ,[object Object],Energy Filled  (deep valence) E f p-type Semiconductor Filled (valence) Empty  (conduction) Band gap Band gap Filled  (deep valence) E f n-type Semiconductor Filled (valence) Empty  (conduction) Band gap Band gap
Simplified Band Structures ,[object Object],Energy Filled  (deep valence) E f n-type Semiconductor Filled (valence) Empty  (conduction) Band gap Band gap Filled  (deep valence) E f p-type Semiconductor Filled (valence) Empty  (conduction) Band gap Band gap E f n-type E c E v p-type E v E c E f
Contacting semiconductors ,[object Object],Energy Filled  (deep valence) E f n-type Semiconductor Filled (valence) Empty  (conduction) Band gap Band gap E f n-type E c E v Filled  (deep valence) E f p-type Semiconductor Filled (valence) Empty  (conduction) Band gap Band gap p-type E v E c E f
Rules for band diagrams ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Bands in Biased Diodes ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Forward biased p-n diode ,[object Object],[object Object],[object Object],[object Object]
Reverse Biased p-n diode ,[object Object],[object Object],[object Object],[object Object]
p-n diode as a switch ,[object Object]
pn diode as a rectifier ,[object Object],[object Object],[object Object],[object Object]
Zener Diode ,[object Object],[object Object],Used in protection of circuits
Photodiode A  photodiode  is an  n-p junction . When light of sufficient photon energy strikes the diode, it excites an electron thereby creating a mobile electron and a positively charged electron hole. If the absorption occurs in the junction's depletion region, these carriers are swept from the junction by the built-in field of the depletion region, producing a  photocurrent .  basic design more efficient design
Photodiode Boeing’s 31% efficient photovoltaic cell. Farming sunlight…
Light-Emitting Diodes (LEDs) A light-emitting diode ( L E D ) is a semiconductor device that emits incoherent narrow-spectrum light  when electrically biased in the forward direction .  Like a normal diode,  L E D  consists of a  p-n junction . As in other diodes, current flows easily from the p-side to the n-side in the forward but not in the reverse direction.  Charge-carriers —  electrons  and  holes  — flow into the junction from electrodes with different voltages.  When an electron meets a hole, it falls into a lower energy level, and releases energy in the form of a photon. The wavelength of the light emitted, and therefore,  its  c o l o r , depends on the band gap energy of the materials forming the  p-n junction .
Light-Emitting Diodes (LEDs) AlGaAs -  red  and IR AlGaP -  green AlGaInP - high-brightness  orange-red , orange, yellow, and green GaAsP -  red ,  orange , and  yellow GaP -  red ,  yellow  and  green GaN -  green ,  blue ,  white InGaN -  near UV ,  bluish-green  and  blue SiC as substrate -  blue Sapphire (Al 2 O 3 ) as substrate -  blue ZnSe -  blue Diamond (C) -  UV
Light-Emitting Diodes (LEDs) Applications:  traffic lights/signals, motorcycle lights, flashlights, light bars on emergency vehicles, fiber optics, optical computer mice, display panels… A large LED screen at the University of Arkansas stadium.
Transistors Transistors are   back-to-back   p-n or n-p  diodes. This one is a  bipolar junction transistor (BJT) . There are many other kinds of transistors. The transistor is used in a wide variety of digital and analog functions, including  signal amplification ,  switching (logic) ,  voltage regulation , and  signal modulation ,
Transistors – Band Diagrams A transistor looks like  two diodes back-to-back  and the band diagram is  symmetric . No current could flow through a transistor because back-to-back diodes would  block current both ways .  However, when you apply a small current to the  BASE  transistor, a much larger current can flow through it as a whole. This gives a transistor its  switching  behavior and also  amplifies  the incoming signal. A small current can turn a larger current on and off.
Transistors – Signal Amplification
Transistors – Switch with a Built-in Logic Metal Oxide Semiconductor Field Effect Transistor (MOSFET) This is a  depletion  MOSFET that is “ normally on .” You need to apply reverse bias  to pinch off the conduction from the  p -channel . There are MOSFETs that are normally off as well (called  enhancement  type MOSFETs).
Hall Effect ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Clean Rooms ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],The modern computer has over  200 MILLION transistors.
April 1972  Name of Processor: 8008 Clock speed: 200 kilohertz Number of transistors: 3,500   September 1978   Name of Processor: 8086 Clock speed: 10 MHz  Number of transistors: 29,000   February 1982   Name of Processor: 286 Clock speed: 12 MHz Number of transistors: 134,000   October 1985   Name of Processor: 386 Clock speed: 16 MHz  Number of transistors: 275,000   June 1991   Name of Processor: 486 Clock speed: 50 MHz Number of transistors: 1,200,000   January 1996   Name of Processor: Pentium Clock speed: 166 MHz  Number of transistors: 3.3 million   August 1998  Name of Processor: Pentium II Clock speed: 450 MHz  Number of transistors: 7.5 million   March 2000   Name of Processor: Pentium III Clock speed: 1.0 GHz  Number of transistors: 28 million   Nov 2002   Name of Processor: Pentium 4 Clock speed: 3.0 GHz  Number of transistors: 55 million
IBM 650 that "became the most popular medium-sized computer in America in the 1950's - rental cost was $5000 per month - 1500 were installed - able to read punched cards or magnetic tape - used rotating magnetic drum main memory unit that could store 4000 words!!! Nokia 9210 Communicator is part of the latest wave of web cell phones Dual 2GHz PowerPC G5 8 GB RAM
Processing Steps ,[object Object]
Ionic Conductivity ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
APPLICATION:  SENSORS •  Ex:   Oxygen sensor:  ZrO 2 •  A concentration gradient causes diffusion of Oxygen through the ceramic. •  This creates a measurable voltage. In order to make sensor response more rapid, increase diffusion rate by introducing more vacancies. •  Add Ca impurity, requiring extra e - : --create Ca interstitials (not likely  in this case) --create O 2-  vacancies (dominant) ∆ V  =  –  e k  T   ·  ln  c 1  /  c 2
P-N RECTIFYING JUNCTION REVIEW •  Allows flow of electrons in one direction only  (e.g., useful to convert alternating current to direct current. --No applied potential: no net current flow. --Forward bias:  carrier flow through p-type and n-type regions; holes and electrons recombine at p-n junction; current flows. --Reverse bias:  carriers flow away from p-n junction; carriers depleted; little current flow.
Popular culture
SUMMARY Next Class: Review for Test 2 ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],E f n-type E c E v p-type E v E c E f

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Lecture 16

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  • 3. Summary: Intrinsic vs. Extrinsic (n or p) • Intrinsic : # electrons = # holes (n = p) --case for pure Si • Extrinsic : --n ≠ p --occurs when DOPANTS are added with a different # valence electrons than the host (e.g., Si atoms) • N-type Extrinsic: (n >> p) • P-type Extrinsic: (p >> n)
  • 4. Conductivity Summary • Conductors, semiconductors, and insulators... --difference is whether there are accessible energy states for conductance electrons. • For metals, conductivity increases with less scattering: --reducing deformation. --reducing imperfections. --decreasing temperature. • For intrinsic semiconductors, conductivity increased by --increasing temperature. • For doped semiconductors --increasing temperature doesn’t make a difference until T increases sufficiently for intrinsic carriers to dominate. --with increased dopants, mobility decreases (more scattering, same as metals).
  • 5. Semiconductor Properties Intrinsic SCs: Conductivity only via thermally induced jumps from the VB to the CB across the band gap. Extrinsic SCs: Conductivity due to thermally induced much smaller jumps from the donor level E D to the CB (n-SC) or from the VB to the acceptor level E A (p-SC). SCs (intrinsic or extrinsic) are lousy conductors (compared to metals). SCs (intrinsic or extrinsic) are lousy electrical insulators (compared to ceramics and polymers). Typical conductivities: Si (intrinsic) 10 -5 per ohm.cm, Si (doped), 10 -1 to 10 2 , Cu 10 6 , Quartz 10 -19 .
  • 6. Semiconductor Properties Intrinsic/Extrinsic SCs cannot be used as electrical wires, too much power loss… Intrinsic/Extrinsic SCs cannot be used in charge storage or electrical insulation, too much charge leakage… What are they good for???? Absolutely nothing on their own… But, how can a multi-billion $ industry be based on such materials? SC devices exploit asymmetry in the band diagrams at the junction (interface) when differently doped SCs are brought together.
  • 7. Semiconductor Junctions When materials with dissimilar electrical properties are brought in contact, a depletion layer forms at the junction (interface). e- h+
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  • 19. Photodiode A photodiode is an n-p junction . When light of sufficient photon energy strikes the diode, it excites an electron thereby creating a mobile electron and a positively charged electron hole. If the absorption occurs in the junction's depletion region, these carriers are swept from the junction by the built-in field of the depletion region, producing a photocurrent . basic design more efficient design
  • 20. Photodiode Boeing’s 31% efficient photovoltaic cell. Farming sunlight…
  • 21. Light-Emitting Diodes (LEDs) A light-emitting diode ( L E D ) is a semiconductor device that emits incoherent narrow-spectrum light when electrically biased in the forward direction . Like a normal diode, L E D consists of a p-n junction . As in other diodes, current flows easily from the p-side to the n-side in the forward but not in the reverse direction. Charge-carriers — electrons and holes — flow into the junction from electrodes with different voltages. When an electron meets a hole, it falls into a lower energy level, and releases energy in the form of a photon. The wavelength of the light emitted, and therefore, its c o l o r , depends on the band gap energy of the materials forming the p-n junction .
  • 22. Light-Emitting Diodes (LEDs) AlGaAs - red and IR AlGaP - green AlGaInP - high-brightness orange-red , orange, yellow, and green GaAsP - red , orange , and yellow GaP - red , yellow and green GaN - green , blue , white InGaN - near UV , bluish-green and blue SiC as substrate - blue Sapphire (Al 2 O 3 ) as substrate - blue ZnSe - blue Diamond (C) - UV
  • 23. Light-Emitting Diodes (LEDs) Applications: traffic lights/signals, motorcycle lights, flashlights, light bars on emergency vehicles, fiber optics, optical computer mice, display panels… A large LED screen at the University of Arkansas stadium.
  • 24. Transistors Transistors are back-to-back p-n or n-p diodes. This one is a bipolar junction transistor (BJT) . There are many other kinds of transistors. The transistor is used in a wide variety of digital and analog functions, including signal amplification , switching (logic) , voltage regulation , and signal modulation ,
  • 25. Transistors – Band Diagrams A transistor looks like two diodes back-to-back and the band diagram is symmetric . No current could flow through a transistor because back-to-back diodes would block current both ways . However, when you apply a small current to the BASE transistor, a much larger current can flow through it as a whole. This gives a transistor its switching behavior and also amplifies the incoming signal. A small current can turn a larger current on and off.
  • 26. Transistors – Signal Amplification
  • 27. Transistors – Switch with a Built-in Logic Metal Oxide Semiconductor Field Effect Transistor (MOSFET) This is a depletion MOSFET that is “ normally on .” You need to apply reverse bias to pinch off the conduction from the p -channel . There are MOSFETs that are normally off as well (called enhancement type MOSFETs).
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  • 30. April 1972 Name of Processor: 8008 Clock speed: 200 kilohertz Number of transistors: 3,500 September 1978 Name of Processor: 8086 Clock speed: 10 MHz Number of transistors: 29,000 February 1982 Name of Processor: 286 Clock speed: 12 MHz Number of transistors: 134,000 October 1985 Name of Processor: 386 Clock speed: 16 MHz Number of transistors: 275,000 June 1991 Name of Processor: 486 Clock speed: 50 MHz Number of transistors: 1,200,000 January 1996 Name of Processor: Pentium Clock speed: 166 MHz Number of transistors: 3.3 million August 1998 Name of Processor: Pentium II Clock speed: 450 MHz Number of transistors: 7.5 million March 2000 Name of Processor: Pentium III Clock speed: 1.0 GHz Number of transistors: 28 million Nov 2002 Name of Processor: Pentium 4 Clock speed: 3.0 GHz Number of transistors: 55 million
  • 31. IBM 650 that "became the most popular medium-sized computer in America in the 1950's - rental cost was $5000 per month - 1500 were installed - able to read punched cards or magnetic tape - used rotating magnetic drum main memory unit that could store 4000 words!!! Nokia 9210 Communicator is part of the latest wave of web cell phones Dual 2GHz PowerPC G5 8 GB RAM
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  • 34. APPLICATION: SENSORS • Ex: Oxygen sensor: ZrO 2 • A concentration gradient causes diffusion of Oxygen through the ceramic. • This creates a measurable voltage. In order to make sensor response more rapid, increase diffusion rate by introducing more vacancies. • Add Ca impurity, requiring extra e - : --create Ca interstitials (not likely in this case) --create O 2- vacancies (dominant) ∆ V  =  –  e k T   ·  ln  c 1 / c 2
  • 35. P-N RECTIFYING JUNCTION REVIEW • Allows flow of electrons in one direction only (e.g., useful to convert alternating current to direct current. --No applied potential: no net current flow. --Forward bias: carrier flow through p-type and n-type regions; holes and electrons recombine at p-n junction; current flows. --Reverse bias: carriers flow away from p-n junction; carriers depleted; little current flow.
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