Transphorm TPH3002PS 600V GaN on Silicon HEMT 2015 teardown reverse costing report published by Yole Developpement

DISCLAIMER : System Plus Consulting provides cost studies based on its knowledge of the manufacturing and selling prices of electronic components and systems. The given values are realistic estimates which do not
bind System Plus Consulting nor the manufacturers quoted in the report. System Plus Consulting is in no case responsible for the consequences related to the use which is made of the contents of this report. The
quoted trademarks are property of their owners.
© 2015 by SYSTEM PLUS CONSULTING, all rights reserved. 1
Electronic Costing & Technology Experts
www.systemplus.fr
21 rue la Nouë Bras de Fer
44200 Nantes – France Phone : +33 (0) 240 180 916 email : info@systemplus.fr
May 2015 - Version 1 - Written by Sylvain Hallereau

Transphorm – TPH3002PS
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Glossary
1. Overview / Introduction 4
– Executive Summary
– Reverse Costing Methodology
2. Company Profile 7
3. TPH3002PS Characteristics 9
4. Physical Analysis 14
– Synthesis of the Physical Analysis
4.1 Package analysis
– View and dimensions and marking
– Package Opening
– Package Cross-Section
4.2 GaN on Silicon HEMT Analysis
– Dimension and marking
– Details and delayering
– Cross-Section, SEM & TEM views
4.3 Resistor Analysis
– Dimension
– Details and process
– Cross- section
4.4 Silicon MOSFET
– Dimension
– Details
– Cross-section
5. Manufacturing Process Flow 87
– Overview
– GaN HEMT Process Flow
– GaN HEMT Fabrication Units
– Resistor Process Flow
– Resistor Fabrication Units
– MOSFET Process Flow
– MOSFET Fabrication Units
– Package Process Flow
6. Cost Analysis 102
– Synthesis of the Cost Analysis
– Main Steps of Economic Analysis
– Yields Explanation
6.1 Cost Analysis GaN HEMT
– GaN HEMT Wafer Cost
– Breakdown per process step
– Back-end Cost
– GaN HEMT Die cost
6.1 Cost Analysis Resistor
– Resistor Wafer Cost
– Breakdown per process step
– Back-end Cost
– Resistor Die cost
6.1 Cost Analysis MOSFET
– MOSFET Wafer Cost
– Back-end Cost
– MOSFET Die cost
6.3 Cost Analysis TPH3002PS
– Assessing BOM
– DBC Cost
– TPH3002PS Module Cost
7. Estimated Manufacturer Price Analysis 130
– Manufacturers ratios
– Estimated manufacturer Price
8. Comparison with GaN System GS66508P 134
Contact

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• This full reverse costing study has been conducted to provide insight on technology data,
manufacturing cost and selling price of the Transphorm TPH3002PS.
• The TPH3002PS is the first GaN-on-silicon HEMT high voltage from Transphorm. With a breakdown
voltage of 600V for a current of 6A at 100°C, the module is optimized for:
• High frequency operation and dv/dt
• Compact DC-DC converters
• AC motor drives
• Battery chargers
• Switch mode power supplies
• The TPH3002PS is an Cascode transistor with a GaN on Silicon HEMT for the high voltage and the high
frequency and a standard MOSFET in silicon to obtain a normally-off transistor drivable by a classic
MOSFET driver die.
• A comparison between the TPH3002PS and the GaN Systems is done in this report.
• TEM analysis are performed to highlight GaN epitaxy and transistor structure characteristics.
• The manufacturing of the GaN-on-Silicon HEMT is realized by Fujitsu in its 150mm wafer foundry in
Aizu, Japan.
• The manufacturing of the Silicon MOSFET is realized by ON Semiconductor in its 150mm Roznov
foundry in Czech
• The assembly module and final test (Back-end) are realized by ON Semiconductor and are assumed to
take place in the Seremban plant in Malaysia.

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• TO220 Package
• The package is 15mm x10.15mm x4.4mm
• It has 3 contacts + the tab connected to the source.
• It consists in a thick nickel-plated copper base plate
on which a plastic enclosure is attached.
Top of the module
Bottom of the module
side of the module

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Cap removing : Optical view
• The 3 dies are soldered or glued with silver filled
adhesive on the quiet-Tab, a ceramic substrate.
• The quiet-Tab id soldered on the leadframe of the TO220
package
Diode
Silicon
MOSFET
GaN on Silicon
HEMT
Quiet-Tab ™
TO220
package
6.4x4= 25.6mm²
GaN on Silicon HEMT is soldered
on the ceramic substrate
The MOSFET and the diode are glued on the ceramic substrate.
The substrate is metalized to interconnect the dies.

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Die Markings
• Marking on the die :
MDH23
www.transphormusa.com
1815

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Doping revelation of trench MOSFET: SEM view

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Thin Film Resistor Front-End Process
Thermal oxidation
The tantalum film is deposited
The aluminum layer is deposited and patterned
The thin oxide layer is deposited and patterned.
The tantalum is etched through the mask of the thin oxide.
A thick SiN layer is deposited and patterned. Passivation layer.

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• We perform the economic analysis of with the Power CoSim+ software.
ON Semiconductor
Seremban, Malaysia
Fujitsu
Aizu, Japan
Silicon
MOSFET
Thin Film
resistor
DBC and
TO220
assembly
GaN on Silicon
HEMT
ON Semiconductor
Roznov, Czech republic
Subcontractor
USA

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Reverse costing analysis represents the best cost/price evaluation given the publically available data, and estimates
completed by industry experts.
Given the hypothesis presented in this analysis, the major sources of correction would lead to a +/- 10% correction on the
manufacturing cost (if all parameters are cumulated).
These results are open for discussion. We can reevaluate this circuit with your information. Please contact us:
• Consulting and Specific Analysis
– North America: Steve LaFerriere, Director of Northern America Business Development, Yole Inc.
Email: laferriere@yole.fr
– Japan: Yutaka Katano, General Manager, Yole Japan & President, Yole K.K.
Email: katano@yole.fr
– RoW: Jean-Christophe Eloy, President & CEO, Yole Développement
Email: eloy@yole.fr
• Report business
– North America: Steve LaFerriere, Director of Northern America Business Development, Yole Inc.
Email: laferriere@yole.fr
– Europe: Fayçal El Khamassi, Headquarter Sales Coordination & Customer Service
Email: khamassi@yole.fr
– Japan & Asia: Takashi Onozawa, Sales Asia & General Manager, Yole K.K.
Email: onozawa@yole.fr
– Korea: Hailey Yang, Business Development Manager, Korean Office
Email: yang@yole.fr
• Financial services
– Jean-Christophe Eloy, CEO & President
Email: eloy@yole.fr
• General
– Email: info@yole.fr

Transphorm TPH3002PS 600V GaN on Silicon HEMT 2015 teardown reverse costing report published by Yole Developpement

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Transphorm TPH3002PS 600V GaN on Silicon HEMT 2015 teardown reverse costing report published by Yole Developpement