1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: MBN600E45A
MANUFACTURER: HITACHI

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
2
SPICE MODEL
*$
* PART NUMBER: MBN600E45A
* MANUFACTURER: HITACHI
.SUBCKT MBN600E45A C G E
Q_Q1 83 81 85 QOUT
R_RLM LM 0 10MEG
E_E1 C2 C1 VALUE { V(LM)*0.18805*PWR(I(V_VC),0.39653) }
R_RE 83 E 1U
C_CGD 82 1 100n
D_DFWD E C DMBN600E45A
M_S2 2 81 82 82 MNSW
D_DBE 85 81 DE
R_R2 2 81 100MEG
V_VC C C2 0
D_D1 2 81 DGD
M_S1 1 82 81 81 MNSW
R_R1 82 1 100MEG
R_RC C1 85 1U
E_ELM LM 0 TABLE { I(V_VC) }
+ ( (0,0) (0.09,0) (0.1,1) )
D_DDS 83 81 DO
R_RG G 82 5.7
M_M1 81 82 83 83 MFIN
C_CGE 82 83 85.8n
.MODEL DGD D ( CJO=1200p M=.1 VJ=.3905 )
.MODEL MFIN NMOS (LEVEL=3 L=1U W=1U LEVEL=3
+ VTO=6.475 KP=77 THETA=55m )
.MODEL DO D (IS=3.79p)
.MODEL DE D (IS=3.79p N=2)
.MODEL QOUT PNP (IS=3.79p NF=1.00 BF=0.4671
+ XTB=1.3 CJE=0.1n
+ VAF=100 TF=67n )
.MODEL MNSW NMOS Vto=-0.01 KP=100 N=1Meg Rds=1e12
.ENDS
*$
.MODEL DMBN600E45A D
+ IS=11.900E-3 N=7.0116 RS=1.6157E-3 IKF=23.932
+ CJO=0.1E-9 M=.3333 VJ=.3905
+ BV=5850 IBV=12m TT=183n
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
3
U1
MBN600E45A
Circuit Configuration
IGBT Subcircuit
DO
DDS
DFWD
S1
MNSW
M1
MFIN
Q1
QOUT
RE
1U
E
85
RC
1U
C
RG
{RG}
G
82
CGE
{Cies-Cres}
83
81
C2
C1
DGD
D1
0
R1
100MEG
CGD
100n
1
R2
100MEG
S2
MNSW
2
IN+
IN-
OUT+
OUT-
E1
VC
DE
DBE

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
4
V_VGE
0V 3V 6V 9V 12V 15V
-I(VCE)
0A
0.2KA
0.4KA
0.6KA
0.8KA
1.0KA
1.2KA
VGE
0
VCE
9V
U1
MBN600E45A
Transfer Characteristic
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
5
Transfer Characteristic Comparison Graph
Simulation result
Comparison table
Test condition: VCE=9 (V)
IC (A)
VGE (V)
%Error
Measurement Simulation
15.5 7.000 7.000 0.00
323.5 9.000 9.004 0.04
942.0 11.000 11.002 0.02

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
6
I_Ic
0A 0.2KA 0.4KA 0.6KA 0.8KA 1.0KA
V(C,E)
0V
1.0V
2.0V
3.0V
4.0V
5.0V
6.0V
7.0V
8.0V
VGE
15V
Rwire
1U
ICU1
MBN600E45A
E
C
G
0
Saturation Characteristic
Circuit Simulation result
Evaluation circuit

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
7
Saturation Characteristic Comparison Graph
Simulation result
Comparison table
Test condition: VGE=15 (V)
IC (A)
VCE (V)
%Error
Measurement Simulation
50 1.706 1.715 0.53
100 2.096 2.091 -0.24
200 2.647 2.636 -0.42
500 3.823 3.821 -0.05
1000 5.400 5.425 0.46

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
8
V_VCE
0V 1.0V 3.0V 5.0V 7.0V 9.0V
-I(VCE)
0A
0.2KA
0.4KA
0.6KA
0.8KA
1.0KA
1.2KA
VGE
0
VCE
U1
MBN600E45A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGE=7V
9V
11V
13V15V

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
9
L2
130nH
1 2
0
VCC
2600
Rg
3.3
V1TD = 1u
TF = 10n
PW = 9.99u
PER = 100u
V1 = -15
TR = 10n
V2 = 15
L1
1500uH
IC = 600
1
2
FWD
C
G
C
K
U1
MBN600E45A
U2
MBN600E45A
Time
0s 2.0us 4.0us 6.0us 8.0us
V(C)
0V
1.0KV
2.0KV
3.0KV
Rise Time Characteristic
Circuit Simulation result
Evaluation circuit
Test condition: VCC=2,600V, IC=600A, L=130nH, RG=3.3, VGE=+/-15V
Parameter Unit Measurement Simulation %Error
tr us 1.6 1.589 -0.69

10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
10
Time
10us 11us 12us 13us 14us 15us 16us 17us 18us
I(C)
0A
100A
200A
300A
400A
500A
600A
700A
800A
L2
130nH
1 2
0
VCC
2600
Rg
3.3
V1TD = 1u
TF = 10n
PW = 9.99u
PER = 100u
V1 = -15
TR = 10n
V2 = 15
L1
1500uH
IC = 600
1
2
FWD
C
G
C
K
U1
MBN600E45A
U2
MBN600E45A
Fall Time Characteristic
Circuit Simulation result
Evaluation circuit
Test condition: VCC=2,600V, IC=600A, L=130nH, RG=3.3, VGE=+/-15V
Parameter Unit Measurement Simulation %Error
tf us 1.9 1.885 -0.79

11. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
11
V_VF
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V
-I(VF)
0A
0.2KA
0.4KA
0.6KA
0.8KA
1.0KA
1.2KA
VF
0
U1
MBN600E45A
FWD Forward Current Characteristic
Circuit Simulation result
Evaluation circuit

12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
12
FWD Forward Current Characteristic Comparison Graph
Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
20 1.176 1.453 23.55
50 1.706 1.759 3.11
100 2.024 2.069 2.22
200 2.521 2.475 -1.82
500 3.364 3.290 -2.20
1000 4.310 4.349 0.90

13. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
13
Time
0s 0.5us 1.5us 2.5us 3.5us 4.5us
I(FWD)
-800A
-600A
-400A
-200A
0A
200A
400A
600A
800A
L2
130nH
1 2
0
VCC
2600
Rg
3.3
V1TD = 1u
TF = 10n
PW = 9.99u
PER = 100u
V1 = -15
TR = 10n
V2 = 15
L1
1500uH
IC = 600
1
2
FWD
C
G
C
K
U1
MBN600E45A
U2
MBN600E45A
Reverse Recovery Characteristic
Circuit Simulation result
Evaluation circuit
Test condition: VCC=2,600V, IC=600A, L=130nH, RG=3.3, VGE=+/-15V
Parameter Unit Measurement Simulation %Error
trr us 0.6 0.599 -0.17

14. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
14
L2
130nH
1 2
0
VCC
2600
Rg
3.3
V1TD = 1u
TF = 10n
PW = 9.99u
PER = 100u
V1 = -15
TR = 10n
V2 = 15
L1
1500uH
IC = 600
1
2
FWD
C
G
K
C
U1
MBN600E45A
U2
MBN600E45A
Appendix A: Switching (tr, tf and trr) test circuit