SPICE MODEL of KBU810 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ BRIDGE RECTIFIER/ PROFESSIONAL
PART NUMBER: KBU810
MANUFACTURER: WTE POWER SEMICONDUCTORS
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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2. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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3. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0.6V 0.8V 1.0V 1.2V 1.3V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1 KBU810_P
0Vdc
R2
100meg
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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4. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
10
Forward Current IF (A)
1
0.1
0.6 0.8 1 1.2
Forward Voltage VF (V)
Simulation Result
VF (V)
IF (A) %Error
Measurement Simulation
0.1 0.650 0.642 -1.28
0.2 0.683 0.679 -0.53
0.5 0.725 0.729 0.61
1.0 0.760 0.768 1.01
2.0 0.800 0.807 0.88
5.0 0.860 0.862 0.27
10.0 0.910 0.909 -0.06
20.0 0.970 0.966 -0.40
50.0 1.085 1.074 -1.06
100.0 1.200 1.208 0.63
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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5. Capacitance Characteristic
Circuit Simulation Result
1.0n
100p
10p
100mV 1.0V 10V 100V
-(I(X_U1.X_U1.D_D1)+I(X_U1.C1))/(100V/100n)
V(rev)
Evaluation Circuit
V2
rev
U1
KBU810_P
V1 = 0 V1
V2 = 100 R1
TD = 0 1g
TR = 100ns
TF = 10ns
PW = 10us
PER = 10us
0 0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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6. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
Junction Capacitance Cj (pF)
100
10
0.1 1 10 100
Reverse Voltage VR (V)
Simulation Result
Cj (pF)
VR (V) %Error
Measurement Simulation
0.1 182.000 180.321 -0.92
0.2 133.000 136.884 2.92
0.5 91.500 94.929 3.75
1.0 71.000 73.284 3.22
2.0 58.000 58.800 1.38
5.0 48.500 47.429 -2.21
10.0 43.000 42.547 -1.05
20.0 40.500 39.563 -2.31
50.0 39.000 37.343 -4.25
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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7. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
10us 20us 30us 40us 50us 60us 70us 80us 90us 100us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.35V
V2 = 10.7V
TD = 1us U1
TR = 10ns V1 KBU810_P
TF = 10ns
PW = 50us
PER = 200us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
Trj us 2.800 2.757 -1.539
Trb us 3.200 3.224 0.750
Trr us 6.000 5.981 -0.318
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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8. Reverse Recovery Characteristic Reference
Measurement
Trj = 2.80(us)
Trb= 3.20(us)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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