Technical Seminar on Bi-cmos Technology
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Technical Seminar on Bi-cmos Technology

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Technical Seminar on Bi-cmos Technology

Technical Seminar on Bi-cmos Technology

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Technical Seminar on Bi-cmos Technology Technical Seminar on Bi-cmos Technology Presentation Transcript

  • TECHNICAL SEMINAR ON
  • TECHNICAL SEMINAR CO-ORDINATOR Mr. SOMASHEKHAR G.C (PhD) (Asst . Professor ,Dept. of ECE ,RGIT) UNDER THE GUIDANCE OF Prof. K.V BALACHANDRA (HOD of ECE, RGIT)
  • 1. Introduction2. Abstract3. Characteristics of CMOS Technology4. Characteristics of Bipolar Technology5. Combine advantages in BiCMOS Technology6. BiCMOS Fabrication7. BiCMOS Integrated Circuits
  • 8. Advantages of BiCMOS9. Disadvantages of BiCMOS10. Applications of BiCMOS11. Comparison between CMOS and BiCMOS12. BiCMOS Products13. Conclusion14. Literature Survey
  •  The history of semiconductor devices started in 1930’s when Lienfed and Heil first proposed the mosfet. Bipolar Technology was started in 1980’s. CMOS Technology was also started in mid 1980’s. Later in 1990 there was a cross over between bipolar and CMOS Technology. In BiCMOS technology, both the MOS and bipolar device are fabricated on the same chip .
  •  The objective of the BiCMOS is to combine bipolar and CMOS so as to exploit the advantages of both the technlogies. Today BiCMOS has become one of the dominant technologies used for high speed, low power and highly functional VLSI circuits. The process step required for both CMOS and bipolar are similar so the BiCMOS process has been enhanced and integrated into the CMOS process without any additional steps.
  •  The primary approach to realize high performance BiCMOS devices is the addition of bipolar process steps to a baseline CMOS process. The BiCMOS gates could be used as an effective way of speeding up the VLSI circuits. The applications of BiCMOS are vast. Advantages of bipolar and CMOS circuits can be retained in BiCMOS chips. BiCMOS technology enables high performance integrated circuits IC’s but increases process complexity.
  •  BiCMOS technology is a combination of Bipolar and CMOS technology. CMOS technology offers less power dissipation, smaller noise margins, and higher packing density. Bipolar technology, on the other hand, ensures high switching and I/O speed and good noise performance Now we are in 3rd Generation BiCMOS Technology.
  •  BiCMOS technology accomplishes both - improved speed over CMOS and lower power dissipation than bipolar technology. The main drawback of BiCMOS technology is the higher costs due to the added process complexity. This greater process complexity in BiCMOS results in a cost increase compared to conventional CMOS technology.
  •  Lower static power dissipation Higher noise margins Higher packing density High yield with large integrated complex functions High input impedance (low drive current) Scaleable threshold voltage High delay load sensitivity Low output drive current (issue when driving large capacitive loads) Low transconductance, where transconductance, gm Vin Bi-directional capability (drain & source are interchangeable) A near ideal switching device Low gain
  •  Higher switching speed Higher current drive per unit area, higher gain Generally better noise performance and better high frequency characteristics Improved I/O speed (particularly significant with the growing importance of package limitations in high speed systems). high power dissipation lower input impedance (high drive current) low packing density low delay sensitivity to load High transconductance gm (gm Vin) It is essentially unidirectional.
  •  It follows that BiCMOS technology goes some way towards combining the virtues of both CMOS and Bipolar technologies Improved speed over purely-CMOS technology Lower power dissipation than purely-bipolar technology(Lower power consumption than bipolar) Flexible I/Os for high performance Improved current drive over CMOS Improved packing density over bipolar High input impedance Low output impedance High Gain and low noise
  • BiCMOS Integrated Circuits
  • ADVANTAGES Improved speed over CMOS Improved current drive over CMOS Improved packing density over bipolar Lower power consumption than bipolar High input impedance Low output impedance High Gain and low noise
  • DISADVANTAGES Increased manufacturing process complexity higher cost Speed degradation due to scaling longer fabrication cycle timeBiCMOS process Bipolar process + Well + Gate Oxide & Poly + CMOS process
  •  Full custom ICs ALU’s, Barrel Shifters SRAM, DRAM Microproessor, Controller Semi custom ICs Register, Flipflop ,Standard cells Adders, mixers, ADC, DAC Gate arrays Flash A/D Coverters
  • 1.Speed Comparison 3.Area Comparison2.Delay Comparison
  • LITERATURE SURVEY BOOKS:VLSI Basic Design by Douglas A. Pucknell and Kamran Eshraghian WEBSITES:http://www.vlsihandbook.comhttp://www.bicmosdesign.comhttp://website.informer.comhttp://www.freepatentsonline.com/6927460.html
  • THANKYOU