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Webinar: Silicon Carbide (SiC): A tecnologia do futuro para projetos de potência
Microchip Technology Inc. is a major provider of silicon carbide (SiC) power solutions, catering to key markets such as industrial, automotive, and aerospace with a focus on enhancing performance and efficiency. The company highlights its extensive product portfolio, including SiC MOSFETs and Schottky barrier diodes, which are designed for ruggedness and reliability in high-power applications. Additionally, Microchip emphasizes the benefits of adopting SiC technology, such as reduced system costs and improved thermal performance.
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Webinar: Silicon Carbide (SiC): A tecnologia do futuro para projetos de potência
- 2. A Leading Providerof Smart, Connected and Secure Embedded Control Solutions SiC Power Solutions Adopt SiC With Ease, Speed and Confidence 28/03/2023 Webinar Embarcados Rodrigo Britto
- 3. Expanding Microchip SolutionsThrough Acquisitions 2 2009 2010 2011 2012 2013 2014 2015 2016 2018 2020 Hampshire Low-Power Embedded Wi-Fi® Motor Drive Products LSS High-Speed ADCs Non-volatile Memory IP High-Voltage Analog & Mixed- Signal Products Analog & mixed-signal, timing, power management FPGAs, SoCs, ASICS, Power, PoE, Timing and Storage systems Assembly & Test Capacity Expansion 3D Gesture Capture & Proximity Detect Equalizer & Coaxial Transceiver Products Bluetooth® Low Energy Microcontrollers, Touch Solutions 2008 Bluetooth® and Embedded Wi-Fi® Development Tools Computer Touch Screen Controllers Security & Life Safety ASICs MOST®, USB & Ethernet Wireless Audio, PC Controllers 2019 2017 High-Level Synthesis Tool for FPGAs Digital Programable Gate Drivers Power-efficient inferencing Precision-timing hardware for industrial networks Microchip Confidential
- 4. Microchip Corporate Overview •Headquartered in Chandler, AZ • ~ $6 Billion revenue run rate • ~19,000 employees • Key markets in Industrial, Automotive, Aerospace, and Defense 3 MCUs Mixed Signal Memory Analog Interface Switches & Controllers High-Rel Discrete Power Management A&D 12% Computing 18% Communications 14% Consumer 13% Automotive 15% Industrial 28% Enterprise Storage FPGA COMBINED CAPABILITIES Microchip Microsemi
- 5. 27 March 2023Microchip Technology Inc. and its subsidiaries © Higher Levels of Power Fidelity are Required The Electrification of Everything 4
- 6. 27 March 2023Microchip Technology Inc. and its subsidiaries © 0 2.000 4.000 6.000 8.000 10.000 12.000 14.000 16.000 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Power supplies UPS Hybrid and electric vehicles Commercial vehicles HEV charging infrastructure industrial applications PV inverters Traction Military and aerospace Other applications © 2022 Omdia Revenue ($ millions) Microchip in the SiC Power Market Consumer EV Microchip major supplier to OEM/Tier 1 Mil/Aero Leading supplier to Military and Aerospace EV Charging Infrastructure Complete SiC Solutions to Streamline Adoption Power Supplies and UPS Diverse SiC product portfolio to satisfy mainstream and niche power supply market Commercial EV and Traction Delivering intelligent SiC to extend range 5 Source: Omdia – 2022 Mid Case Estimate
- 7. 27 March 2023Microchip Technology Inc. and its subsidiaries © 0 1.000 2.000 3.000 4.000 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Power supplies UPS Commercial vehicles HEV charging infrastructure industrial applications PV inverters Traction Military and aerospace Other applications © 2022 Omdia Revenue ($ millions) Microchip in the SiC Power Market (non-EV) Consumer EV Microchip major supplier to OEM/Tier 1 Mil/Aero Leading supplier to Military and Aerospace EV Charging Infrastructure Complete SiC Solutions to Streamline Adoption Power Supplies and UPS Diverse SiC product portfolio to satisfy mainstream and niche power supply market 6 Source: Omdia – 2022 Mid Case Estimate Commercial EV and Traction Delivering intelligent SiC to extend range
- 8. Microchip SiC TargetMarkets SiC Power Applications Market Segment DC Fast Charging, E-fuse, On-Board Charger, On-Board DC-DC, Traction Drive Automotive Charging, Traction Drive, Auxiliary Power Unit Transportation Semi-cap, Induction Heating, Welding/Plasma Cutting, APU, UPS, Robotics Industrial Solar Inverters (micro, string, central), Auxiliary Power Supply, Energy Storage System Renewables/Grid Flight Actuators, Propulsion Drive, E-Fuse, Power Distribution, Traction Drive Mil/Aero PSU PFC, PSU DC-DC, Backup Power UPS, E-Fuse, Telecom/5G Power Supplies Data Center
- 9. 27 March 2023Microchip Technology Inc. and its subsidiaries © Microchip SiC Timeline 8 2006 2008 2010 2012 2014 2016 2018 2020 2022 2024 Internal SiC Fab in Bend, OR 2004 Gen 1 SiC MOSFETs Released (650V & 1200V) APT Acquired by Microsemi SiC Process and Technology Transfer for SIT/JFET Dual Fabs (Internal & External) Microsemi Acquired by Microchip SiC Modules Released AEC Release of SiC MOSFETs and SBDs 3.3 kV SiC MOSFETs and SBDs Released Process Transfer, Expansion to Fab 5 Gen 2 SiC Release (700V – 1700V) AgileSwitch® Acquisition PowerSicel acquired by Advanced Power Technology (APT) First SiC Device Shipped (Q4/2003) Gen 2 SiC SBDs Released (700V – 1700V)
- 10. 27 March 2023Microchip Technology Inc. and its subsidiaries © Key Differentiation Packaging Product Family Unrivaled Ruggedness and Performance Die Widest Breadth Discretes Lowest Inductance Standard and Custom-Tailored Modules Fastest to Market Highest Efficiency Gate Drivers SiC Portfolio: 700V – 3.3 kV 9
- 11. 27 March 2023Microchip Technology Inc. and its subsidiaries © Adopt SiC With Ease, Speed and Confidence SiC Die – Unrivaled Ruggedness and Performance 10 Portfolio Packaging Product Family • 700V – 3.3 kV, 15 mΩ – 750 mΩ SiC MOSFETs • 700V – 3.3 kV, 10A – 100A SiC Schottky Barrier Diodes (SBDs) Die • Fastest to Market • Minimize system development time • Earlier and more revenue • Accelerate your innovation process • Lowest System Cost • Device redundancy not needed • Focus on next generation vs redesign • No supply interruption of production • Lowest Risk • Highest reliability and system lifetime • Lowest component count • Multiple epi wafer sources and dual fabs
- 12. 27 March 2023Microchip Technology Inc. and its subsidiaries © Unrivaled Ruggedness and Reliability • Rock-solid threshold voltage • Lifetimes >100 years • Degradation-free • Eliminate freewheeling Schottky • Stable performance after 100k pulses • Optimized cost and efficiency • Safely ride through unexpected system transients Gate Oxide Integrity Robust Body Diode Avalanche Rugged “IGBT-like” Short Circuit Performance 11
- 13. 27 March 2023Microchip Technology Inc. and its subsidiaries © Ruggedness | Gate Oxide Stability 12 Operate routinely & reliably Meet (exceed) desired service lifetime Application Benefits Stress: VGS = -8V, 1000 hrs at TA = 175°C | Change: -0.02V Stress: VGS = 20V, 1000 hrs at TA = 175°C | Change: +0.06V Vth measurements before and after 1000 hours of High-Temperature Gate Bias (HTGB) stress show negligible shift
- 14. 27 March 2023Microchip Technology Inc. and its subsidiaries © Ruggedness | Gate Oxide Lifetime 13 i. Oxide failure (breakdown) accelerated with temperature and electric field across the oxide ii. Failure modes extracted from Weibull plots iii. Arrhenius equation used to predict oxide lifetime Data from production-grade 1200V, 40 mΩ SiC MOSFETs Oxide predicted to last more than 100 years at recommended VGS and TJ = 175°C Operate routinely & reliably Meet (exceed) desired service lifetime Survive electrical transients Application Benefits
- 15. 27 March 2023Microchip Technology Inc. and its subsidiaries © Ruggedness | Body Diode Stability 14 Operate routinely & reliably Meet (exceed) desired service lifetime i. SiC MOSFET body diodes stressed with a constant forward current ii. Body diode I-V curves and RDS(on) measurements made before and after stress Data* from commercially available 1200V, 80 mΩ SiC MOSFETs *Courtesy: A. Agarwal and M. Kang, Ohio State University No degradation observed in Microchip body diodes Also, lower component cost by using body diode and eliminating freewheeling Schottky diode Application Benefits 0 5 10 15 20 25 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Ids (A) Pre stress Post stress after 20 Hr Post stress after 50 Hr Post stress after 100 Hr Post stress after 168 Hr M. Kang et al, 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2019, pp. 416-419, doi: 10.1109/WiPDA46397.2019.8998940.
- 16. 27 March 2023Microchip Technology Inc. and its subsidiaries © Ruggedness | Avalanche / Repetitive UIS 15 i. Measures the MOSFET’s ability to repetitively sustain an avalanche current being switched off from an unclamped inductive load (RUIS) ii. Cells are not enhanced (MOSFET is OFF); peak current increases rapidly until VDS = VBR; avalanche current likely to crowd around die edge Data from commercially available 1200V, 40 mΩ MOSFETs Microchip devices exhibit excellent avalanche ruggedness and parametric stability following 100k pulses of RUIS Safely ride through harmful electrical transients Application Benefits Microchip Post RUIS Pre-RUIS (3 RUIS failures) (1 RUIS failure) Post RUIS Pre-RUIS
- 17. 27 March 2023Microchip Technology Inc. and its subsidiaries © Ruggedness | Short Circuit Capability 16 Safely ride through harmful electrical transients i. Short circuit emulates the application condition of shorting the MOSFET’s drain-source across the DC link ii. Cells are enhanced (MOSFET is ON); peak current intended to distribute uniformly across die Data from production-grade 700V, 35 mΩ SiC MOSFETs 10 µs comparable to IGBTs Microchip Designed to survive short circuit events, even at higher DC voltages (with adequate gate driver) Application Benefits
- 18. 27 March 2023Microchip Technology Inc. and its subsidiaries © Ruggedness | Terrestrial Neutron Susceptibility • Neutrons can damage or degrade system performance at sea level or in higher elevations • Application benefit: Using SiC provides higher immunity to terrestrial radiation and lowers FIT rate across low to high elevations Microchip 17 Microchip SiC MOSFETs perform well against SiC competition regarding neutron irradiation Microchip SiC MOSFETs have 10X lower FIT rate than comparable Si IGBTs @ rated voltage
- 19. 27 March 2023Microchip Technology Inc. and its subsidiaries © 0,8 1,0 1,2 1,4 1,6 1,8 2,0 0 25 50 75 100 125 150 175 R DS(on) , Drain-to-Source On Resistance (Normalized) TJ, Junction Temperature (°C) Microchip - Planar Competitor A - Planar Competitor B - Planar Competitor C - Trench Competitor D - Trench Ruggedness | RDS(on) vs. Junction Temperature 18 Lower change in RDS(on) curve means higher stability over temperature Microchip 1200V Microchip 1200V
- 20. Comparison SiC vs Si Microsemi APTMC120AM20CT1AG Microsemi APTGLQ300A120G Parameter SiCMOSFET Trench4 Fast IGBT Semiconductor type ~3.5 x lower 143 A/1200 V 500 A/1200 V Ratings @ Tc=25°C ~3.0 x smaller SP1 – 52x41 mm SP6 – 108x62 mm Package type - 130 A 130 A Current @ 30 kHz Tc=75°C, D=50%, V=600 V ~2.0 x higher 115 A 60 A Current @ 50 kHz Tc=75°C, D=50%, V=600 V ~5.0 x lower 3.4 mJ 16.0 mJ Eon+Eoff @ 100 A Tj=150°C, V=600 V SiC MOSFET Si IGBT 0 50 100 150 200 40 60 80 100 120 140 160 Frequency (kHz) ID, Drain Current (A) Operating Frequency vs Drain Current VBUS=600V D=50% TJ=150°C TC=75°C MORE POWER @ HIGHER SWITCHING FREQUENCY in SMALLER VOLUME SiC Power Module Allows Higher Power-Density
- 21. SiC Reliability inHigh-Power Switching • Operates at higher efficiency across high junction temperature range (Tj = 175 oC) for improved cooling • Higher SiC power density vs. Si enables smaller magnetics, transformers, and DC bus capacitors, and less cooling for more compact form factor • Lowers overall “system” costs • AEC-Q101 qualification in progress SiC is the perfect technology to address high frequency and high power density applications Lower Power Losses Higher frequency cap. Higher junction temp. Easier cooling Downsized system Higher Reliability
- 22. 27 March 2023Microchip Technology Inc. and its subsidiaries © Portfolio Packaging Product Family • 700V – 3.3 kV, 15 mΩ – 750 mΩ SiC MOSFETs • 700V – 3.3 kV, 10A – 100A SiC Schottky Barrier Diodes (SBDs) Discretes Adopt SiC With Ease, Speed and Confidence SiC Discretes – Widest Breadth 21 • Fastest to Market • Minimize system development time • Earlier and more revenue • Accelerate your innovation process • Lowest System Cost • Device redundancy not needed • Focus on next generation vs redesign • No supply interruption of production • Lowest Risk • Highest reliability and system lifetime • Lowest component count • Multiple epi wafer sources and dual fabs
- 23. 27 March 2023Microchip Technology Inc. and its subsidiaries © Widest Breadth 700V – 3.3 kV SiC Discretes 22 SiC MOSFETs • 700V – 3.3 kV • 15 mΩ – 750 mΩ SiC Schottky Barrier Diodes • 700V – 3.3 kV • 10A – 100A Auto-Qualified Parts • AEC-Q101
- 24. 27 March 2023Microchip Technology Inc. and its subsidiaries © 3.3 kV SiC MOSFETs and Diodes Industry-leading 3.3 kV SiC MOSFETs and SBDs 23 Extends the industry’s broadest line of SiC power solutions • 3.3 kV SiC MOSFETs 25 mΩ, 104A – Lowest on-resistance 80 mΩ, 43A 400 mΩ, 8A • 3.3 kV SiC Schottky Barrier Diodes (SBDs) 90A – Highest current-rated 30A
- 25. 27 March 2023Microchip Technology Inc. and its subsidiaries © 3.3 kV SiC MOSFETs and Diodes What Problem Are We Solving? 24 3.3 kV Silicon IGBTs are limited in performance (Slow with high switching losses) Eliminate design compromises, reduce design complexity and lower system costs with 3.3 kV SiC Take advantage of SiC technology: reduce size, weight and losses with higher switching frequency capability Limited suppliers of 3.3 kV SiC products SiC MOSFET Si IGBT
- 26. 27 March 2023Microchip Technology Inc. and its subsidiaries © 3.3 kV SiC MOSFETs and Diodes Target Applications • Rail Traction Power Units (TPU) and Auxiliary Power Units (APU) • SemiCap (Semiconductor Capital equipment) • Medical imaging power supplies • Renewable energy/grid • Industrial motor drives • Aerospace and defense power distribution 25
- 27. 27 March 2023Microchip Technology Inc. and its subsidiaries © Adopt SiC With Ease, Speed and Confidence SiC Modules – Lowest Inductance, Standard and Custom-Tailored 26 Portfolio Packaging Product Family • 700V – 1700V, 1.5 mΩ – 40 mΩ SiC MOSFETs • 700V – 1700V, 50A – 600A SiC Schottky Barrier Diodes (SBDs) • Baseless Power Modules SiC Modules • Lowest System Cost • Device redundancy not needed • Focus on next generation vs redesign • No supply interruption of production • Lowest Risk • Highest reliability and system lifetime • Maximize performance • Multiple epi wafer sources and dual fabs • Fastest to Market • Minimize system development time • Earlier and more revenue • Accelerate your innovation process
- 28. 27 March 2023Microchip Technology Inc. and its subsidiaries © Lowest Inductance, Standard and Custom-Tailored 700V – 1.7 kV SiC Modules 27 SiC MOSFETs • 700V – 1.7 kV • 1.5 mΩ – 40 mΩ • Baseless Power Modules SiC Schottky Barrier Diodes • 700V – 1.7 kV • 50A – 600A
- 29. 27 March 2023Microchip Technology Inc. and its subsidiaries © Lowest Inductance SP6LI Power Module – Enabling Higher Power Density and Efficiency • Extremely low stray inductance, < 2.9 nanohenry • Dedicated to SiC MOSFET technology • High switching frequency • High efficiency • High current 28
- 30. 27 March 2023Microchip Technology Inc. and its subsidiaries © Standard and Custom-Tailored Maximize System Performance Base Plate Improve the heat transfer to the heatsink • Cu material for good thermal transfer • AlSiC for improved reliability Power Semiconductor Die IGBT, MOSFET, Diode, SiC • Soldered to the substrates • Connected by ultrasonic Al wire bonds Substrates Al2O3, AlN, Si3N4 • Provide isolation • Good heat transfer to the base plate Terminals Screw on or Solder pins • Power and signal connections • Minimum parasitic resistance and inductance Package Standard or Custom • Environmental protection • Mechanical robustness Internal Printed Circuit Board Not available in all modules • Used to route gate signals tracks to small signal terminals • Used to mount gate circuit and protection in case of intelligent power module 29
- 31. 27 March 2023Microchip Technology Inc. and its subsidiaries © Baseless Power Modules Reduce Weight by up to 40% • Low weight, low profile, small package • Rugged baseless products adapted to A&D conditions/requirements • Various electrical topologies available • Full aerospace custom versions available on demand (managed under AS9100 quality standards) 30
- 32. 27 March 2023Microchip Technology Inc. and its subsidiaries © Adopt SiC With Ease, Speed and Confidence SiC Gate Drivers – Fastest to Market, Highest Efficiency 31 Portfolio Packaging Product Family • 700V – 1700V Gate Drivers • Augmented Switching™ (Patented) • Development Kits Gate Drivers • Fastest to Market • Reduces design and evaluation time • Earlier and more revenue • Accelerate your innovation process • Lowest System Cost • Higher efficiency • Reduces design and evaluation time • No supply interruption of production • Lowest Risk • Increased power system reliability • Reduces design and evaluation time • Runs cooler
- 33. 27 March 2023Microchip Technology Inc. and its subsidiaries © SiC Runs Faster Than Silicon But Often With Nasty Secondary Effects 32 • Noise/EMI • Short Circuit • Overvoltage • Overheating A digital solution, with Augmented Switching™ technology, is required to address these impacts With Augmented Switching Without Augmented Switching
- 34. 27 March 2023Microchip Technology Inc. and its subsidiaries © Unleash the Full Capability of Silicon Carbide Quickly Optimize with Configurable Digital Control 2ASC-12A1HP 2ASC-12A2HP 33
- 35. 27 March 2023Microchip Technology Inc. and its subsidiaries © Augmented Switching™ Technology 34
- 36. 27 March 2023Microchip Technology Inc. and its subsidiaries © Connect and Configure Saves up to Six Months of Development for New Designs 35 Driver Core Module Adapter Board SiC Module Plug-and-Play Board SiC Module Intelligent Configuration Tool (ICT) PICKit™ 4 Programming Kit
- 37. 27 March 2023Microchip Technology Inc. and its subsidiaries © Intelligent Configuration Tool (ICT) Version 2.0 Quick Configuring and Application Tailoring 36 Graphical Editor Graphical Editor Temperature Curves Temperature Curves
- 38. 27 March 2023Microchip Technology Inc. and its subsidiaries © Module Adapter Board (MAB) Solutions 37 • Turns cores into plug-and-play drivers • Design files available for download • Dedicated design and support team • Custom adapter boards development (NRE) Typical Module Image For Module Type(s) MAB Image Rated Voltage Module Adapter Board P/N 62 mm, D3, SP6 1200V 62CA1 1700V 62CA4 SP6LI 1200V SP6CA1 1700V SP6CA3 Rohm E/G Type 1200V EDCA1 XMCA1 1200V XMCA1
- 39. 27 March 2023Microchip Technology Inc. and its subsidiaries © Development Kits: ASDAK+ and ASDAK Save up to Six Months of Development in New Designs 38 ASDAK Kits available without power module, compatible with other module packages • SP6LI low-inductance SiC power module • Module adapter board • Gate driver core • Intelligent Configuration Tool (ICT) • PICKit™ 4 programming kit • Cabling 20 kW and higher Power Conversion Using SiC MOSFET modules (or IGBTs, and considering SiC) Switch Types 600V – 1.7 kV Switch Voltage Ranges • EVs, chargers, trains, trams, trolleys, busses, heavy duty vehicles • Energy storage, microgrid • Induction heating (<200 kHz fsw) • Wind, solar, motor drives (with above criteria) End Applications • SP6LI, D3, SP6 • 62mm, XM3, EDCA Modules Target Applications ASDAK+ Includes:
- 40. 27 March 2023Microchip Technology Inc. and its subsidiaries © SiC Design Support Hardware Tools 39 • 30 kW 3-phase Vienna PFC Development/EvalBoard • 30 kW Dual PSFB DC-DC Development/EvalBoard • 150 kVA 3-phase SiC Power Stack Development/EvalBoard • 400/800VDC, 30A Solid State Circuit Breaker Development/EvalBoard • 60W Auxiliary Power Supply with 250 – 1000VDC input Reference Design • Half bridge ASD2 gate driver and SiC MOSFETs in TO-247 Development/EvalBoard • SP6LI Module Development/EvalBoard • More available at SiC Design Resources www.microchip.com/SiC
- 41. SiC Design Support SoftwareTools 40 MPLAB® Mindi™ Analog Simulator • Microchip’s free circuit simulation software available for download at www.microchip.com/Mindi • Uses SIMetrix and SIMPLIS simulation environment for SPICE and piecewise-linear modeling, respectively Vienna PFC PLECS Model for electrical and thermal modeling SiC MOSFET and SBD SPICE Models (PLECs models also available) • SiC MOSFET and Schottky Barrier Diode models available at www.microchip.com/SiC • Two levels of simulation categories:
- 42. 27 March 2023Microchip Technology Inc. and its subsidiaries © Adopt SiC With Ease, Speed and Confidence • Unrivaled ruggedness and performance • Best-in-class avalanche ruggedness, short circuit capability and neutron susceptibility • Oxide lifetime in excess of 100 years and a stable body diode • Qualified and secured long-term substrate and epi supply • Multiple vendors that exceed high-side demand • Not reliant on competitor substrate/epi material • Dual fab strategy • Protecting the supply chain from a natural disaster or major line yield issue • Short lead times • 20 - 30 weeks typically • Stability of Microchip • 125+ consecutive quarters of profitability • 30+ years of power semiconductor expertise • 20+ years of SiC expertise • No "EOL" practice 41
- 43. Contact us at www.microchip.com/SiC AdoptSiC With Ease, Speed and Confidence
- 44. 27 March 2023Microchip Technology Inc. and its subsidiaries © Resources – Microchip SiC Portal | Public www.microchip.com/SiC 43 Includes • SiC Die • SiC Discretes • SiC Modules • SiC Gate Drivers • Featured Products • SiC Adoption Tools ─ Reference Designs and Evaluation Kits ─ Design Resources ─ Selector Guides • Support Options
- 45. 44 Silicon Carbide Challenges Crystallinepurity inferior to Silicon Wafer cost ~ 35X that of Silicon Wafers are transparent; equipment handling issues Requires high temperature implant Implant anneal at temperatures > 1700C
- 46.