Download as PDF, PPTX
![Internal structure of an integrated module*
* Source: A. Wintrich, U. Nicolai, W. Tursky, T. Reimann, Application Manual Power Semiconductors, 2015, [Online]. Available https://www.semikron.com/service-support/application-manual.html
Inside IGBT module
Inside Power Device
45](https://image.slidesharecdn.com/advancesinpowerconvertersforwindtechnology2-250320123507-8f9ca107/75/Advances-in-Power-Converter-for-Wind-pdf-45-2048.jpg)
![UPS
Toshiba SiC 500 kW G2020 UPS efficiency curve
"G2020 Series SiC 500–750 kVA", 2016, [online] Available: http://www.toshiba.com/tic/power-electronics/ uninterruptible-power-systems/g2020-series-sic-500-to-750-kva.
67](https://image.slidesharecdn.com/advancesinpowerconvertersforwindtechnology2-250320123507-8f9ca107/75/Advances-in-Power-Converter-for-Wind-pdf-67-2048.jpg)
![EV
• EV Everywhere Challenge 2013: 35% reduction in
size and 40% reduction in weight and loss
• Toyota’s goal to reduce PCU size by 80%
• Ford Motor Company’s : switching losses reduced
by 40% when SiC MOSFETs used, with an overall 5%
improvement in fuel efficiency
Toyota SiC power control unit
Jan. 2015, [online] Available: http://newsroom.toyota.co.jp/en/detail/5692153.
68](https://image.slidesharecdn.com/advancesinpowerconvertersforwindtechnology2-250320123507-8f9ca107/75/Advances-in-Power-Converter-for-Wind-pdf-68-2048.jpg)
![Traction
Mitsubishi all-SiC modules based traction converter
2016, [online] Available: http://www.MitsubishiElectric.com/products/transportation/.
• Mitsubishi developed a 3.3 kV/1500 A
module for all-SiC traction inverters,
including a two-level inverter for a 1.5 kV
input dc system for the Odakyu Electric
Railway and a three-level inverter for 2.5
kV ac input for the central Japan railway
• First full-SiC traction system developed for
N700 Shinkansen bullet trains on the
central Japan railway
• Compared with the existing design, it
reduces the inverter size by 55% and
weight by 35%
69](https://image.slidesharecdn.com/advancesinpowerconvertersforwindtechnology2-250320123507-8f9ca107/75/Advances-in-Power-Converter-for-Wind-pdf-69-2048.jpg)
Advances in Power Converter for Wind.pdf
- 1. Advances in PowerElectronics for Wind Energy DR. SHABARI NATH DEPT. OF ELECTRONICS AND ELECTRICAL ENGG. INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI
- 2. Power Electronics Electronicsthat is used for conversion of power And to save energy Power Electronic Converter AC/DC DC/AC 2
- 3.
- 4. Growth of WindEnergy Year Capacity (MW) 2005 6,270 2010 16,084 2014 23,354 2015 26,769 2016 32,280 2017 34,046 2018 35,626 2019 37,669 2020 38,785 2021 40,355 2022 42,633 2023 45,887 Large hydro Small hydro Solar Wind Bio mass other Renewable Energy Share Large hydro Small hydro Solar Wind Bio mass other Data from Wikepedia 4
- 5.
- 6.
- 7. Wind Farms inIndia Google Image 7
- 8. Off Shore WindPower Google Image 8
- 9. Off Shore windpower in India Off Shore wind capacity yet unexplored Huge potential as long coastal line Govt. aims to tap 140GW by 2030 First Off shore 1GW wind power plant in Gujrat and TamilNadu https://mnre.gov.in/off-shore-wind/ 9
- 10. Off shore windpower Google Image 10
- 11. Floating Wind Mills GoogleImage 11
- 12. Small Wind Turbines GoogleImage 12
- 13.
- 14. Two Types HorizontalAxis Vertical Axis Google Image 14
- 15. Stages of Conversion Wind Power to Aerodynamic Power Aerodynamic Power to Electrical Power All modern wind turbines designed on principles of aerodynamics and not on thrust of wind 15
- 16. Nacelle of WindTurbine Google Image 16
- 17. Nacelle of WindTurbine (cont..) Google Image 17
- 18. Pitch angle control GoogleImage 18
- 19.
- 20.
- 21. Wind Mill Construction GoogleImage 21
- 22. Wind Mill Construction(cont..) Google Image 22
- 23. Wind Mill Construction(cont..) Google Image 23
- 24. Wind Mill Construction(cont..) Google Image 24
- 25. Wind Mill Construction(cont..) Google Image 25
- 26. Wind Mill Construction(cont..) Google Image 26
- 27.
- 28. Permanent Magnet Synchronous Generator(PMSG) Google Image 28
- 29. Squirrel cage InductionGenerator Google Image 29
- 30. Wind Power Constant Voltage and frequency Variable voltage and variable frequency DC toAC Power Converter DC to DC Power Converter 1Google Image Wind Turbine and Generator 1 30
- 31. Wound rotor InductionMachine Google Image 31
- 32. Doubly fed inductiongenerator (DFIG) Google Image 32
- 33. Wind power electronicconverters Bin Wu, Y. Lang, N. Zargari and S. Kouro, “Power conversion and control of wind energy systems”, IEEE Wiley, 2011 33
- 34. Wind power electronicconverters (cont.) Bin Wu, Y. Lang, N. Zargari and S. Kouro, “Power conversion and control of wind energy systems”, IEEE Wiley, 2011 34
- 35. Wind power electronicconverters (cont.) Bin Wu, Y. Lang, N. Zargari and S. Kouro, “Power conversion and control of wind energy systems”, IEEE Wiley, 2011 35
- 36. Wind power electronicconverters (cont.) Bin Wu, Y. Lang, N. Zargari and S. Kouro, “Power conversion and control of wind energy systems”, IEEE Wiley, 2011 36
- 37. Wind power electronicconverters (cont.) Bin Wu, Y. Lang, N. Zargari and S. Kouro, “Power conversion and control of wind energy systems”, IEEE Wiley, 2011 37
- 38. Wind power electronicconverters (cont.) Bin Wu, Y. Lang, N. Zargari and S. Kouro, “Power conversion and control of wind energy systems”, IEEE Wiley, 2011 38
- 39. Power Electronic Devices forWind Power 39
- 40. Existing Power ElectronicDevices Device Application Rectifier diode Low frequency, low to high power AC- DC conversion Schottky diode High frequency, low power DC-DC Fast recovery diode Medium frequency, medium power Power MOSFET Low voltage high current, DC-DC IGBT Medium power DC-AC Thyristor High power low frequency AC-DC applications 40
- 41. Vin + vO - v0 t Vin + vD - + vO - iD Vin vD iD t t + vO - i0 Vdc ExistingPower Electronic Devices (cont..) 41
- 42. * Source: Googleimage Pictures of different diodes* A K Anode Drift region Substrate (cathode) Cathode metalization A K n+ n- p+ Anode metalization Power Diodes 42
- 43. MOSFET MOSFET * Source: Googleimage Pictures of MOSFETs* drain N - P (body) N + N + N + N + N + P (body) (drift region) parasitic BJT iD integral diode channel length body-source short source gate conductor field oxide gate oxid Power MOSFET 43
- 44. u v w P+ N- Drift Region P+ N+ P+ N+ Collector (c) Emitter (E) Gate (G) Oxide (insulating the gate) Note the P+ layer Collector (C) Emitter (E) Gate (G) IGBT * Source: Google image Pictures of IGBTs* IGBT 44
- 45. Internal structure ofan integrated module* * Source: A. Wintrich, U. Nicolai, W. Tursky, T. Reimann, Application Manual Power Semiconductors, 2015, [Online]. Available https://www.semikron.com/service-support/application-manual.html Inside IGBT module Inside Power Device 45
- 46. Increase in WindTurbine and Power https://www.energy.gov/eere/articles/wind-turbines-bigger-better 46
- 47. Limitation due todevice ratings Two Level Inverter SC- SB- SA- P A N C SA+ B ia,b,c C SB+ SC+ Vdc 47
- 48. Limitation due todevice ratings (cont..) Three Level Inverter A B C Ia,b,c NPT DAp DAn DBp DBn DCp DCn Vc Vc 48
- 49. Vdc /2 Ca S1b S4b S2b S3b b n ib Multi-levelInverters Vdc /2 Ca S1c S4c S2c S3c c n ic Vdc /2 Ca S1a S4a S2a S3a a n ia 49
- 50.
- 51. Key Requirements –Future Power Electronics High Efficiency High Power Density High Temperature Compact design for same power rating 51
- 52. Answer – WideBandgap Devices High Switching Frequency Withstand high temperatures Low device losses High blocking voltages J. Millán, P. Godignon, X. Perpiñà, A. Pérez-Tomás and J. Rebollo, "A Survey of Wide Bandgap Power Semiconductor Devices," in IEEE Transactions on Power Electronics, vol. 29, no. 5, pp. 2155-2163, May 2014 52
- 53. SiC Device Development X.She, A. Q. Huang, Ó. Lucía and B. Ozpineci, "Review of Silicon Carbide Power Devices and Their Applications," in IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8193-8205, Oct. 2017 53
- 54. SiC Diodes X. She,A. Q. Huang, Ó. Lucía and B. Ozpineci, "Review of Silicon Carbide Power Devices and Their Applications," in IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8193-8205, Oct. 2017 Forward direction Equivalent slope resistance Threshold voltage Conducting area V I Blocking area Reverse direction Break through 54
- 55. SiC Diode (cont..) SiC Schottky barrier diode (SBD) Almost no reverse recover current Small ON state voltage drop Upto 600 V due to high leakage current SiC junction barrier Schottky (JBS) diode 600V-3.3kV SiC PIN diode Ultra high range 10kV-20kV 55 X. She, A. Q. Huang, Ó. Lucía and B. Ozpineci, "Review of Silicon Carbide Power Devices and Their Applications," in IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8193-8205, Oct. 2017
- 56. SiC Diode (cont..) •Lower leakage current in SiC PIN as compared with JBS or SBD, ideal for higher temperature operation. • 3 V knee voltage, which is determined by the SiC material, makes SiC PIN ineffective from the conduction point of view when blocking voltages below 3.3 kV. SiC JBS diodes preferred in these voltage ranges. • Because of the minority carrier stored in the device, sizeable reverse recovery current in the SiC PIN diode 56 X. She, A. Q. Huang, Ó. Lucía and B. Ozpineci, "Review of Silicon Carbide Power Devices and Their Applications," in IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8193-8205, Oct. 2017
- 57. SiC Diode (cont..) PartIF, VDC VF QC Irr IDW40G65C5 40 A, 650 V 1.5 V 55 nC 2.2 μA RURG8060_F085 80 A, 600 V 1.6 V 130 nC 2 mA Si Diode vs SiC diode comparison 57 Google Image
- 58. SiC Switch 58 X. She,A. Q. Huang, Ó. Lucía and B. Ozpineci, "Review of Silicon Carbide Power Devices and Their Applications," in IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8193-8205, Oct. 2017
- 59. SiC MOSFET Two typicalSiC MOSFET structures: (a) planar and (b) trench. Upto 3.3 kV range Majority carrier device Lower switching loss and high speed 3.38 MHz for 1.2 kV SiC MOSFET High gate voltage requirement 18-20 V Upto 15 kV SiC MOSFETs reported Beyond 10 kV ON state voltage drop is very high 59
- 60. SiC MOSFET (cont..) PartIDS, VDS RDS (on) QG IPB65R045C7 46 A, 650 V 45 mΩ 93 nC IPB95R450PFD7 13.3 A, 950 V 450 mΩ 43 nC Part IDS, VDS RDS (on) QG IMBG65R048M1H 45 A, 650 V 48 mΩ 78 nC IMW120R040M1H 55 A, 1200 V 40 mΩ 39 nC Si MOSFETs SiC MOSFETs 60
- 61. SiC IGBT Cross-section structureof SiC IGBT. Above 10 kV SiC IGBTs suitable N-IGBT upto 27 kV P-IGBT upto 15 kV 61
- 62. SiC IGBT (cont..) Summaryof high-voltage SiC IGBTs 62 X. She, A. Q. Huang, Ó. Lucía and B. Ozpineci, "Review of Silicon Carbide Power Devices and Their Applications," in IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8193-8205, Oct. 2017
- 63. Cost Benefit Potential systemcost benefit from SiC devices Cost of a 17 kW solar inverter reduced by 20% with SiC JFETs and SiC diodes 63 X. She, A. Q. Huang, Ó. Lucía and B. Ozpineci, "Review of Silicon Carbide Power Devices and Their Applications," in IEEE Transactions on Industrial Electronics, vol. 64, no. 10, pp. 8193-8205, Oct. 2017
- 64. SiC Roadmap SiC deviceapplication roadmap predicted by Yole K. Madjour, "Silicon carbide market update: From discrete devices to modules", PCIM Europe, 2014 64
- 65.
- 66. Solar PV Inverter GE1MW SiC inverter installed in Berlin Efficiency curve of GE SiC megawatt photovoltaic inverter M. H. Todorovic et al., "SiC MW solar inverter", Proc. PCIM Europe, pp. 645-652, 2016. 66
- 67. UPS Toshiba SiC 500kW G2020 UPS efficiency curve "G2020 Series SiC 500–750 kVA", 2016, [online] Available: http://www.toshiba.com/tic/power-electronics/ uninterruptible-power-systems/g2020-series-sic-500-to-750-kva. 67
- 68. EV • EV EverywhereChallenge 2013: 35% reduction in size and 40% reduction in weight and loss • Toyota’s goal to reduce PCU size by 80% • Ford Motor Company’s : switching losses reduced by 40% when SiC MOSFETs used, with an overall 5% improvement in fuel efficiency Toyota SiC power control unit Jan. 2015, [online] Available: http://newsroom.toyota.co.jp/en/detail/5692153. 68
- 69. Traction Mitsubishi all-SiC modulesbased traction converter 2016, [online] Available: http://www.MitsubishiElectric.com/products/transportation/. • Mitsubishi developed a 3.3 kV/1500 A module for all-SiC traction inverters, including a two-level inverter for a 1.5 kV input dc system for the Odakyu Electric Railway and a three-level inverter for 2.5 kV ac input for the central Japan railway • First full-SiC traction system developed for N700 Shinkansen bullet trains on the central Japan railway • Compared with the existing design, it reduces the inverter size by 55% and weight by 35% 69
- 70. Solid State Transformers(SST) Ratings 60Hz Power Transformer High frequency (HF) Power Transformer Voltage and frequency 100kV, 60Hz 140kV, 20kHz Current 20A RMS 20A RMS Power 2MW 1MW Weight 32000Kg 204Kg Loss Approx. 35kW Approx. 3kW at 2MW Low Frequency Power electronic converter Power electronic converter Solid State Transformer (SST) High Frequency (HF) Transformer Low Frequency Advantages: About 150 times lighter Greatly reduced size Asynchronous link - primary and secondary at different frequencies Power flow control Easy to transport 70
- 71. SST (cont..) Solid-state transformerbased on 15 kV SiC MOSFET D. P. Sadik et al., "Short-circuit protection circuits for silicon-carbide power transistors", IEEE Trans. Ind. Electron., vol. 63, no. 4, pp. 1995-2004, Apr. 2016. • 1 MVA solid state transformer based on a 15 kV/120 A SiC MOSFET module. • Compared with a traditional transformer with the same rating, it facilitates a 50% reduction in size and 75% reduction in weight while achieving 98% efficiency. 71
- 72. Power Density Comparison 20kVAmatrix converter with SiC-JFETs size 12.2cm x 6.2cm x 11.7cm weight 1.7kg developed by Infineon 600VA Dimensions (W x D x H): 10.1 x 27.9 x 14.2 cm Net Weight: 4.2 Kg T. Friedli, S.D. Round, and J.W. Kolar. A 100 khz sic sparse matrix converter. In Power Electronics Specialists Conference, 2007. PESC 2007. IEEE, pages 2148 -2154, june 2007. 72
- 73. Efficiency Comparison Efficiency andpower density of Si vs SiC J. Biela, M. Schweizer, S. Waffler and J. W. Kolar, "SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors," in IEEE Transactions on Industrial Electronics, vol. 58, no. 7, pp. 2872-2882, July 2011 73
- 74. Acknowledgement In this ppt,several pictures and diagrams are copied from google images. So, I would like to acknowledge all those websites and their authors, whose pictures, I have downloaded and used in these power point slides.
- 75.