The document presents specifications and performance comparisons for a 10kW interleaved boost converter utilizing CREE's second-generation SiC MOSFETs. It highlights key advantages like improved efficiency at high frequencies (up to 100kHz) compared to silicon IGBTs, lower losses, reduced component costs, and simplified circuit design. The C2M MOSFETs demonstrate superior thermal performance and switching characteristics, making them advantageous for renewable energy applications such as solar inverters.

1. 100KHZ 10KW Interleaved Boost Converter with full
SiC MOSFET
CREE POWER
April 2013
CONFIDENTIAL

2. Confidential
C2M MOSFET: Higher Performance and Lower Cost
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Copyright © 2013 Cree, Inc.
CMF20120D
Gen 1 SiC MOS
C2M0080120D
C2M SiC MOS
Die Size 16.6 mm2 10.4 mm2
Typ. On Resistance (Tj = 25 °C) 80 mΩ 80 mΩ
Typ. On Resistance (Tj = 125°C) 84.5 mΩ 123 mΩ
Max Gate Voltage -5V/+25V -10V/+25V
Switching Loss (Tj = 150°C, VDS = 800V) 0.78 mJ 0.56 mJ
Gate Charge 91 nC 49 nC
Transconductance 7.4 S 9.8 S
Input Capacitance, Ciss 1915 pF 950 pF
Output Capacitance, Coss 120 pF 80 pF
Reverse Transfer Capacitance, Crss 13 pF 6.5 pF
Thermal Impedance 0.5ºC/W 0.6ºC/W
Copyright © 2014, Cree Inc.

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100KHZ 10KW Interleaved Boost DC/DC Design
Specifications with full SiC Power Devices
Specifications:
1. Output Power 10kW
2. Input voltage range: 300Vdc~450Vdc
3. Bus Voltage: 450Vdc~650Vdc
4. Operating frequency for BOOST: 100KHZ
5. Target efficiency for BOOST: >99%
6. Applications: PV Solar Inverter and DC/DC converter
Solar Panel
MPPT Boost Stage
G
D
S
G
D
S
Inverter Stage
Copyright © 2014, Cree Inc.

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Cree Demo Board of Cree 10KW (2x5KW) Interleaved Boost Converter
245mmx140mmx90mm
(No include Inductor and output capacitor)
New Released!!
C2M SiC MOSFET
C2M0080120D
Copyright © 2014, Cree Inc.

5. Confidential
Reference Design Block Diagram for Cree 10KW Interleaved Boost
Converter
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BOM comparison for 10KW (2x5KW) Boost Converter
Cost Comparison
Silicon IGBT
IGW40N120H3
&
APT40DQ120BG
SiC MOSFET
C2M0080120D
&
C4D10120D
SiC MOSFET
C2M0080120D
&
C4D10120D
Switching Frequency 20 kHz 60 kHz 100 kHz
Inductors $62 $35 $20
Capacitors $65 $65 $65
Heat sink $45 $30 $38
MOSFET & IGBT $5.6 ~$30 ? ~$30 ?
Diode $3.8 ~$10? ~$10?
Total Cost $181.4 $170 $163
Size
Copyright © 2014 Cree, Inc.
Note: The BOM cost is only for reference, not guarantee
Inductor is from Japan vendor

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BOM comparison for 10KW (2x5KW) Boost Converter
Cost Comparison
Silicon IGBT
IGW40N120H3
&
APT40DQ120BG
SiC MOSFET
C2M0080120D
&
C4D10120D
SiC MOSFET
C2M0080120D
&
C4D10120D
Switching Frequency 20 kHz 60 kHz 100 kHz
Inductors $42 $24 $13
Capacitors $65 $65 $65
Heat sink $45 $30 $38
MOSFET & IGBT $5.6 ~$30 ? ~$30 ?
Diode $3.8 ~$10? ~$10?
Total Cost $161.4 $159 $156
Size
Note: The BOM cost is only for reference, not guarantee
Inductor is from China vendor
Copyright © 2014, Cree Inc.

8. Confidential
Inductor comparisons with frequency for 10KW (2x5KW) Boost converter
Solutions Si IGBT SiC MOSFET
Frequency 20KHz 100KHz
Inductor (uH) @ rated Current 1100 450
Core Material Sendust powder + Ferrite High Flux powder
Coil Type AWG8*1*98Ts AWG12*1*55Ts
Size (mm) 140x108x68 OD:63 x HT:26
Weight (Kg) 2.3 0.4
DCR (mohm) 22 25
Coil Losses (W) 6.1 7.5
Core Losses (W) 13.0 15.8
Reference Price( USD) 31 10
New
20KHZ Inductor 100KHZ Inductor
Copyright © 2014, Cree Inc.

9. Copyright © 2014, Cree Inc.
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SiC MOSFET Gen 1 Vs SiC MOSFET C2M
at 100KHZ 10KW Hard-switching interleaved Boost

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Efficiency Comparison between SiC MOSFET Gen 1 Vs C2M @100KHZ
Note: 1. External gate resistor Rg=2ohm
2. Input voltage:450Vdc, output voltage: 640Vdc
3. No fan for system cooling with room ambient temperature
4. Same SiC diode C4D10120D is used
98.40%
98.50%
98.60%
98.70%
98.80%
98.90%
99.0%
99.10%
99.20%
99.30%
99.40%
2kW 4kW 6kW 8kW 10kW
Efficiency
C2M0080120D Vs CMF20120D Efficiency with Output Power
C2M0080120D Vgs=18V/-2V Rg=2R@100kHz
C2M0080120D Vgs=15V/-2V Rg=2R@100kHz
CMF20120D Vgs=18V/-2V Rg=2R@100kHz
CMF20120D Vgs=15V/-2V Rg=2R@100kHz
Copyright © 2014, Cree Inc.

11. Confidential
Turn on waveforms between SiC MOSFET Gen 1 Vs C2M @100KHZ
C2M0080120D
Eon: 54.5uJ
(100ns/div)
CMF20120D
Eon: 98.3uJ
(100ns/div)
Note: 1. External gate resistor Rg=2ohm
2. Input voltage:450Vdc, output voltage: 640Vdc, full loading with 2x5KW
3. No fan for system cooling with room ambient temperature
4. Vgs=18V on and -2V off
5. Fs=100KHz for both Gen 1 and C2M
Vds (200V/div)
Id (5A/div)
Vds (200V/div)
Id (5A/div)
Copyright © 2014, Cree Inc.

12. Confidential
Turn off waveforms between SiC MOSFET Gen 1 Vs C2M @100KHZ
C2M0080120D
Eoff: 83.2uJ
(100ns/div)
CMF20120D
Eoff: 97.4uJ
(100ns/div)
Note: 1. External gate resistor Rg=2ohm
2. Input voltage:450Vdc, output voltage: 640Vdc, full loading with 2x5KW
3. No fan for system cooling with room ambient temperature
4. Vgs=18V on and -2V off
5. Fs=100KHz for both Gen 1 and C2M
Vds (200V/div) Vds (200V/div)
Id (5A/div) Id (5A/div)
Copyright © 2014, Cree Inc.

13. Confidential
Thermal between SiC MOSFET Gen 1 and C2M @100KHZ
C2M0080120D
Tc=90.6DegC
CMF20120D
Tc=105.3DegC
Note: 1. External gate resistor Rg=2ohm
2. Input voltage:450Vdc, output voltage: 640Vdc, full loading with 2x5KW
3. No fan for system cooling with room ambient temperature
4. Vgs=18V on and -2V off
5. Fs=100KHz for both Gen 1 and C2M
6. The data is measured after 30min with full loading 2x5KW
7. Same SiC diode C4D10120D is used
C2M0080120D CMF20120D C4D10120D
C4D10120D
Copyright © 2014, Cree Inc.

14. Copyright © 2014, Cree Inc.
14
1200V/20A SiC MOSFET Vs 1200V/40A H3 Si IGBT

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Efficiency Comparison between SiC MOSFET @100KHZ Vs Si H3 IGBT @20KHZ
Note: 1. External gate resistor Rg=2ohm
2. Input voltage:450Vdc, output voltage: 640Vdc
3. SiC MOSFET has 5 times frequency of Si IGBT
4. No fan for system cooling with room ambient temperature
5. Same SiC diode C4D10120D is used
98.40%
98.50%
98.60%
98.70%
98.80%
98.90%
99.0%
99.10%
99.20%
99.30%
99.40%
2kW 4kW 6kW 8kW 10kW
Efficiency
C2M0080120D Vs CMF20120D Vs IGW40N120H3 Efficiency with output power
C2M0080120D Vgs=18V/-2V Rg=2R@100kHz
C2M0080120D Vgs=15V/-2V Rg=2R@100kHz
CMF20120D Vgs=18V/-2V Rg=2R@100kHz
IGW40N120H3 Vgs=15V/-2V Rg=2R@20kHz
Copyright © 2014, Cree Inc.

16. Confidential
Turn on waveforms between SiC MOSFET Gen 1 @100KHZ Vs Si H3 IGBT
@20KHZ
C2M0080120D
Eon: 54.5uJ
100ns/div
IGW40N120H3
Eon: 115.1uJ
200ns/div
Note: 1. External gate resistor Rg=2ohm
2. Input voltage:450Vdc, output voltage: 640Vdc, full loading with 2x5KW
3. No fan for system cooling with room ambient temperature
4. Vgs=18V on and -2V off for SiC MOSFET and Vgs=15V on and -2V off for Si IGBT
5. Fs=100KHz for SiC MOSFET and Fs=20KHZ for Si IGBT
Vds (200V/div) Vds (200V/div)
Id (5A/div) Id (5A/div)
Copyright © 2014, Cree Inc.

17. Confidential
C2M0080120D
Eoff: 83.2uJ
100ns/div
IGW40N120H3
Eoff: 911.5uJ
200ns/div
Turn off waveforms between SiC MOSFET Gen 1 @100KHZ Vs Si H3 IGBT
@20KHZ
Note: 1. External gate resistor Rg=2ohm
2. Input voltage:450Vdc, output voltage: 640Vdc, full loading with 2x5KW
3. No fan for system cooling with room ambient temperature
4. Vgs=18V on and -2V off for SiC MOSFET and Vgs=15V on and -2V off for Si IGBT
5. Fs=100KHz for SiC MOSFET and Fs=20KHZ for Si IGBT
Vds (200V/div) Vds (200V/div)
Id (5A/div) Id (5A/div)
Copyright © 2014, Cree Inc.

18. Confidential
Thermal between SiC MOSFET C2M @100KHZ and Si H3 IGBT @20KHZ
C2M0080120D
Tc=90.6DegC
IGW40N120H3
Tc=131.5DegC
Note: 1. External gate resistor Rg=2ohm
2. Input voltage:450Vdc, output voltage: 640Vdc, full loading with 2x5KW
3. No fan for system cooling with room ambient temperature
4. Vgs=18V on and -2V off for SiC C2M MOSFET and Vgs=15V on and -2V off for Si H3 IGBT
5. Fs=100KHz for SiC C2M MOSFET and Fs=20KHZ for Si H3 IGBT
6. The data is measured after 30min with full loading 2x5KW
7. Same SiC diode C4D10120D is used
C2M0080120D IGW40N120H3
C4D10120D C4D10120D
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SiC MOSFETs lowers cost of 10 kW boost Converter
Architecture of all-SiC Boost Converter
Copyright © 2014, Cree, Inc.
pg. 19

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Summary
• C2M SiC MOSFET has better performance than Gen 1
SiC MOSFET with faster switching and lower losses
• C2M SiC MOSFET can achieve best efficiency with high
frequency to 100KHZ compared to Si IGBT at 20KHZ,
even at light loading
• Total BOM cost can save due to small size and weight at
100KHZ without sacrificing the performance
• SiC MOSFET can simplify the topology design with hard-
switching to get higher efficiency without any additional
circuit of soft-switching.
• C2M has larger transconductance to accept lower turn on
gate to source voltage compared to Gen 1
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21. Copyright © 2013, Cree Inc.
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