SPICE MODEL of IDH10G65C5 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: IDH10G65C5
MANUFACTURER: Infineon
REMARK: Professional Model

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
U1
IDH10G65C5
R1
0.01m
V1
0Vdc
0
R2
100MEG
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V
I(R1)
0A
2A
4A
6A
8A
10A
12A
14A
16A
18A
20A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.1 0.895 0.894 -0.11
0.2 0.917 0.918 0.11
0.5 0.955 0.956 0.10
1 1.000 1.000 0.00
2 1.080 1.068 -1.11
5 1.250 1.243 -0.56
10 1.500 1.513 0.87
20 2.040 2.035 -0.25

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
5
V(R)
100mV 1.0V 10V 100V 1.0KV
I(V2)/(650V/100u)
0
50p
100p
150p
200p
250p
300p
350p
400p
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 100us
V2 = 650
V2
0Vdc
R2
100MEG
U1
IDH10G65C5
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
6
Comparison Graph
Circuit Simulation result
Comparison table
VR(V)
C (pF)
%Error
Measurement Simulation
0.1 363.000 359.400 -0.99
0.2 355.000 350.600 -1.24
0.5 333.000 329.200 -1.14
1 300.000 298.700 -0.43
2 255.000 255.300 0.12
5 190.000 185.700 -2.26
10 144.000 137.000 -4.86
20 104.000 99.300 -4.52
50 70.000 67.700 -3.29
100 52.000 53.900 3.65
200 43.800 45.900 4.79
500 40.000 40.370 0.92

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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V_V1
100V 200V 300V 400V 500V 600V
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
R4
10G
U1
IDH10G65C5
R1
100m
V1
0Vdc
0
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
8
Comparison Graph
Circuit Simulation result
Comparison table
IR (A)
VR (V)
%Error
Measurement Simulation
1.00E-09 428.000 408.700 -4.51
1.00E-08 508.000 507.100 -0.18
5.30E-07 650.000 649.100 -0.14