SPICE MODEL of IDL06G65C5 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version
is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of IDL06G65C5 (Professional Model) in SPICE PARK
1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: IDL06G65C5
MANUFACTURER: Infineon
REMARK: Professional Model
2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
U1
IDL06G65C5
R1
0.01m
V1
0Vdc
0
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
0A
2A
4A
6A
8A
10A
12A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
1 1.040 1.033 -0.67
2 1.130 1.133 0.27
5 1.400 1.400 0.00
12 2.010 2.000 -0.50
5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
5
V(R)
100mV 1.0V 10V 100V 1.0KV
I(V2)/(650V/100u)
0
50p
100p
150p
200p
250p
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 100us
V2 = 650
V2
0Vdc
U1
IDL06G65C5
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit