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Sungkyunkwan University (SKKU) Semiconductor Nano Device Lab.
Introduction and Expertise
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1 1
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3 31 1
1
3
1
3
3
4
0
2
4
6
8
2009 2010 2011 2012 2013 2014 2015 2016
Publications
Year
Publications
First Author
Co-Author
 Ph.D. from University of Delhi, India
 Post-Ph.D. at IIT- Kharagpur, India
 Post-Doc Fellow at SKKU, Suwon
 Research Professor at SKKU, Suwon,
South Korea
Career Highlights
Worked on Materials
Device Modeling + TCAD Simulation + fabrication of
GaAs, GaN, and 2D material based devices  Electrical
characterization for carrier transport and device physics
Device Physical
Modeling and
TCAD
Simulation:
Silvaco, Comsol
2D Material
based
heterostructure
devices and
hybrid sensors
Expertise and
Strength
Device
Fabrication,
Electrical and
Material
Characterization
 Device Simulation: GaN, GaAs, InGaAs HEMTs
 Vanadium dioxide (VO2) nanowires and
thin-films: Memristors
 Graphene, MoS2, HfSe2, WSe2 and their
heterostructures: Diodes, FETs, barristors,
and Invertors
 Hybrid MoS2, Graphene Oxide and Au, Pt,
Nanoparticles based Gas, opto- and
chemical Sensors
Sungkyunkwan University (SKKU) Semiconductor Nano Device Lab.
Research Highlights
Recent Top Publications
2D, 1D material/device study Sensing study
TCAD
Simulations
of Double-
Gate HEMTs

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  • 1. Sungkyunkwan University (SKKU) Semiconductor Nano Device Lab. Introduction and Expertise 1 1 0 1 1 2 3 31 1 1 3 1 3 3 4 0 2 4 6 8 2009 2010 2011 2012 2013 2014 2015 2016 Publications Year Publications First Author Co-Author  Ph.D. from University of Delhi, India  Post-Ph.D. at IIT- Kharagpur, India  Post-Doc Fellow at SKKU, Suwon  Research Professor at SKKU, Suwon, South Korea Career Highlights Worked on Materials Device Modeling + TCAD Simulation + fabrication of GaAs, GaN, and 2D material based devices  Electrical characterization for carrier transport and device physics Device Physical Modeling and TCAD Simulation: Silvaco, Comsol 2D Material based heterostructure devices and hybrid sensors Expertise and Strength Device Fabrication, Electrical and Material Characterization  Device Simulation: GaN, GaAs, InGaAs HEMTs  Vanadium dioxide (VO2) nanowires and thin-films: Memristors  Graphene, MoS2, HfSe2, WSe2 and their heterostructures: Diodes, FETs, barristors, and Invertors  Hybrid MoS2, Graphene Oxide and Au, Pt, Nanoparticles based Gas, opto- and chemical Sensors
  • 2. Sungkyunkwan University (SKKU) Semiconductor Nano Device Lab. Research Highlights Recent Top Publications 2D, 1D material/device study Sensing study TCAD Simulations of Double- Gate HEMTs