The document provides product specifications for the IRFD120 and SiHFD120 power MOSFETs from Vishay, including absolute maximum ratings, thermal characteristics, electrical characteristics and typical performance curves, with the MOSFETs offering features such as a 175°C operating temperature and fast switching for power applications.
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Original Power MOSFET IRFP240 IRFP240PBF 240 200V 20A TO-247 New Vishay Silic...AUTHELECTRONIC
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Original N-Channel Mosfet IRFUC20PBF 600V 2A TO-251 New VishayAUTHELECTRONIC
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Original P-CHANNEL POWER MOSFETS IRFP9240PBF IRFP9240 9240 200V 12A TO-247 NewAUTHELECTRONIC
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Original Power MOSFET IRFP240 IRFP240PBF 240 200V 20A TO-247 New Vishay Silic...AUTHELECTRONIC
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Original N-Channel Power MOSFET IRF1010EPBF IRF1010 1010 60V 84A TO-220 New I...AUTHELECTRONIC
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Original P-CHANNEL MOSFET IRF5210PBF IRF5210 5210 100V 38A TO-220 New IRAUTHELECTRONIC
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Original Power MOSFET IRFP460PBF IRFP460 460 500V 20A TO-247 New Vishay Silic...AUTHELECTRONIC
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https://authelectronic.com/original-power-mosfet-irfp460pbf-irfp460-460-500v-20a-to-247-new-vishay-siliconix
Original N Channel Mosfet IRF3710PBF IRF3710 3710 37A 100V NewAUTHELECTRONIC
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Explore the innovative world of trenchless pipe repair with our comprehensive guide, "The Benefits and Techniques of Trenchless Pipe Repair." This document delves into the modern methods of repairing underground pipes without the need for extensive excavation, highlighting the numerous advantages and the latest techniques used in the industry.
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Cosmetic shop management system project report.pdfKamal Acharya
Buying new cosmetic products is difficult. It can even be scary for those who have sensitive skin and are prone to skin trouble. The information needed to alleviate this problem is on the back of each product, but it's thought to interpret those ingredient lists unless you have a background in chemistry.
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Data file handling has been effectively used in the program.
The automated cosmetic shop management system should deal with the automation of general workflow and administration process of the shop. The main processes of the system focus on customer's request where the system is able to search the most appropriate products and deliver it to the customers. It should help the employees to quickly identify the list of cosmetic product that have reached the minimum quantity and also keep a track of expired date for each cosmetic product. It should help the employees to find the rack number in which the product is placed.It is also Faster and more efficient way.
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The proposed project is developed to manage the automobile in the automobile dealer company. The main module in this project is login, automobile management, customer management, sales, complaints and reports. The first module is the login. The automobile showroom owner should login to the project for usage. The username and password are verified and if it is correct, next form opens. If the username and password are not correct, it shows the error message.
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Online Grocery Store is an e-commerce website, which retails various grocery products. This project allows viewing various products available enables registered users to purchase desired products instantly using Paytm, UPI payment processor (Instant Pay) and also can place order by using Cash on Delivery (Pay Later) option. This project provides an easy access to Administrators and Managers to view orders placed using Pay Later and Instant Pay options.
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Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
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Vaccine management system project report documentation..pdfKamal Acharya
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Maintaining high-quality standards in the production of TMT bars is crucial for ensuring structural integrity in construction. Addressing common defects through careful monitoring, standardized processes, and advanced technology can significantly improve the quality of TMT bars. Continuous training and adherence to quality control measures will also play a pivotal role in minimizing these defects.
Planning Of Procurement o different goods and services
Original N-Channel Mosfet IRFD120PBF 120 100V 1.3A DIP-4 New Vishay Siliconix
1. Document Number: 91128 www.vishay.com
S10-2462-Rev. C, 08-Nov-10 1
Power MOSFET
IRFD120, SiHFD120
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 22 mH, Rg = 25 , IAS = 2.6 A (see fig. 12).
c. ISD 9.2 A, dI/dt 110 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () VGS = 10 V 0.27
Qg (Max.) (nC) 16
Qgs (nC) 4.4
Qgd (nC) 7.7
Configuration Single
N-Channel MOSFET
G
D
S
HVMDIP
D
S
G
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package HVMDIP
Lead (Pb)-free
IRFD120PbF
SiHFD120-E3
SnPb
IRFD120
SiHFD120
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100
V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 V
TA = 25 °C
ID
1.3
ATA = 100 °C 0.94
Pulsed Drain Currenta IDM 10
Linear Derating Factor 0.0083 W/°C
Single Pulse Avalanche Energyb EAS 100 mJ
Repetitive Avalanche Currenta IAR 1.3 A
Repetitive Avalanche Energya EAR 0.13 mJ
Maximum Power Dissipation TA = 25 °C PD 1.3 W
Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
* Pb containing terminations are not RoHS compliant, exemptions may apply
2. www.vishay.com Document Number: 91128
2 S10-2462-Rev. C, 08-Nov-10
IRFD120, SiHFD120
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 120 °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 100 V, VGS = 0 V - - 25
μA
VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 0.78 Ab - - 0.27
Forward Transconductance gfs VDS = 50 V, ID = 0.78 Ab 0.80 - - S
Dynamic
Input Capacitance Ciss
VGS = 0 V
VDS = 25 V
f = 1.0 MHz, see fig. 5
- 360 -
pFOutput Capacitance Coss - 150 -
Reverse Transfer Capacitance Crss - 34 -
Total Gate Charge Qg
VGS = 10 V
ID = 9.2 A, VDS = 80 V
see fig. 6 and 13b
- - 16
nCGate-Source Charge Qgs - - 4.4
Gate-Drain Charge Qgd - - 7.7
Turn-On Delay Time td(on)
VDD = 50 V, ID = 9.2 A
Rg = 18 , RD = 5.2 , see fig. 10b
- 6.8 -
ns
Rise Time tr - 27 -
Turn-Off Delay Time td(off) - 18 -
Fall Time tf - 17 -
Internal Drain Inductance LD
Between lead,
6 mm (0.25") from
package and center of
die contact
- 4.0 -
nH
Internal Source Inductance LS - 6.0 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
- - 1.3
A
Pulsed Diode Forward Currenta ISM - - 10
Body Diode Voltage VSD TJ = 25 °C, IS = 1.3 A, VGS = 0 Vb - - 2.5 V
Body Diode Reverse Recovery Time trr
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb
- 130 260 ns
Body Diode Reverse Recovery Charge Qrr - 0.65 1.3 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
3. Document Number: 91128 www.vishay.com
S10-2462-Rev. C, 08-Nov-10 3
IRFD120, SiHFD120
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TA = 25 °C
Fig. 2 - Typical Output Characteristics, TA = 175 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
TA = 25 °C
TA = 175 °C
4. www.vishay.com Document Number: 91128
4 S10-2462-Rev. C, 08-Nov-10
IRFD120, SiHFD120
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
TA = 25 °C
TJ = 175 °C
SINGLE PULSE
TA = 25 °C
TJ = 175 °C
SINGLE PULSE
5. Document Number: 91128 www.vishay.com
S10-2462-Rev. C, 08-Nov-10 5
IRFD120, SiHFD120
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
TA, Ambient Temperature (°C)
ID,DrainCurrent(A)
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
RD
VGS
Rg
D.U.T.
10 V
+
-
VDS
VDD
VDS
90 %
10 %
VGS
td(on) tr td(off) tf
ThermalResponse(ZthJA)
t1, Rectangular Pulse Duration (s)t1, Rectangular Pulse Duration (s)
6. www.vishay.com Document Number: 91128
6 S10-2462-Rev. C, 08-Nov-10
IRFD120, SiHFD120
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
Rg
IAS
0.01 Ωtp
D.U.T.
L
VDS
+
-
VDD
10 V
Vary tp to obtain
required IAS
IAS
VDS
VDD
VDS
tp
QGS QGD
QG
VG
Charge
10 V
D.U.T.
3 mA
VGS
VDS
IG ID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
7. Document Number: 91128 www.vishay.com
S10-2462-Rev. C, 08-Nov-10 7
IRFD120, SiHFD120
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91128.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 Va
ISD
Driver gate drive
D.U.T. lSD waveform
D.U.T. VDS waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+-
-
-
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
Rg
Note
a. VGS = 5 V for logic level devices
VDD
8. Document Number: 91361 www.vishay.com
Revision: 06-Sep-10 1
Package Information
Vishay Siliconix
HVM DIP (High voltage)
Note
1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.
INCHES MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A 0.310 0.330 7.87 8.38
E 0.300 0.425 7.62 10.79
L 0.270 0.290 6.86 7.36
ECN: X10-0386-Rev. B, 06-Sep-10
DWG: 5974
0.248 [6.29]
0.240 [6.10]
0.197 [5.00]
0.189 [4.80]
0.024 [0.60]
0.020 [0.51]
0.160 [4.06]
0.140 [3.56]
0.180 [4.57]
0.160 [4.06]
4 x
0.100 [2.54] typ.
A L
0.045 [1.14]
0.035 [0.89]2 x
0.043 [1.09]
0.035 [0.89]
0.094 [2.38]
0.086 [2.18]
0.017 [0.43]
0.013 [0.33]
0° to 15°
2 x
E min.
E max.
0.133 [3.37]
0.125 [3.18]