Original N-Channel Mosfet FQP8N60C 8N60C 8N60 600V 7.5A TO-220F NewAUTHELECTRONIC
This document provides information on 600V N-Channel MOSFET products from Fairchild Semiconductor, including:
- The FQP8N60C and FQPF8N60C devices which use Fairchild's proprietary DMOS technology to minimize resistance and maximize switching performance.
- Key features and specifications like 7.5A continuous drain current, 1.2Ohm on-resistance, and 100% avalanche testing.
- Electrical characteristics, maximum ratings, typical performance curves, and test circuits to evaluate parameters such as gate charge, switching waveforms, and diode recovery.
- Application suitability for high efficiency power supplies, active power factor correction, and electronic ballasts due to
Original MOSFET N-CHANNEL FQPF13N50C FQPF13N50 13N50 TO-220 13A 500V NewAUTHELECTRONIC
This document provides specifications for the FQB13N50C/FQI13N50C 500V N-Channel MOSFETs from Fairchild Semiconductor. The MOSFETs use Fairchild's planar stripe DMOS technology and are well-suited for applications such as switched mode power supplies and lamp ballasts. Key specifications include a maximum drain-source voltage of 500V, continuous drain current of 13A, on-resistance as low as 0.39 ohms, and fast switching times. The document provides detailed electrical characteristics, thermal properties, package dimensions and test circuits.
Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New FairchildAUTHELECTRONIC
Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New Fairchild
https://authelectronic.com/original-mosfet-n-8n80c-8n80-fqpf8n80c-fqpf8n80-8a-800v-to-220-new
Original N-Channel Mosfet IRFI4019H-117P 4019 8A 150V TO-220 NewAUTHELECTRONIC
Original N-Channel Mosfet IRFI4019H-117P 4019 8A 150V TO-220 New
https://authelectronic.com/original-n-channel-mosfet-irfi4019h-117p-4019-8a-150v-to-220-new
Original N-Channel Mosfet FQP8N60C 8N60C 8N60 600V 7.5A TO-220F NewAUTHELECTRONIC
This document provides information on 600V N-Channel MOSFET products from Fairchild Semiconductor, including:
- The FQP8N60C and FQPF8N60C devices which use Fairchild's proprietary DMOS technology to minimize resistance and maximize switching performance.
- Key features and specifications like 7.5A continuous drain current, 1.2Ohm on-resistance, and 100% avalanche testing.
- Electrical characteristics, maximum ratings, typical performance curves, and test circuits to evaluate parameters such as gate charge, switching waveforms, and diode recovery.
- Application suitability for high efficiency power supplies, active power factor correction, and electronic ballasts due to
Original MOSFET N-CHANNEL FQPF13N50C FQPF13N50 13N50 TO-220 13A 500V NewAUTHELECTRONIC
This document provides specifications for the FQB13N50C/FQI13N50C 500V N-Channel MOSFETs from Fairchild Semiconductor. The MOSFETs use Fairchild's planar stripe DMOS technology and are well-suited for applications such as switched mode power supplies and lamp ballasts. Key specifications include a maximum drain-source voltage of 500V, continuous drain current of 13A, on-resistance as low as 0.39 ohms, and fast switching times. The document provides detailed electrical characteristics, thermal properties, package dimensions and test circuits.
Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New FairchildAUTHELECTRONIC
Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New Fairchild
https://authelectronic.com/original-mosfet-n-8n80c-8n80-fqpf8n80c-fqpf8n80-8a-800v-to-220-new
Original N-Channel Mosfet IRFI4019H-117P 4019 8A 150V TO-220 NewAUTHELECTRONIC
Original N-Channel Mosfet IRFI4019H-117P 4019 8A 150V TO-220 New
https://authelectronic.com/original-n-channel-mosfet-irfi4019h-117p-4019-8a-150v-to-220-new
Original N-Channel Mosfet 7N65L-TF1-T UTC7N65L 7.4A 650V TO-263 New UTCAUTHELECTRONIC
The 7N65 power MOSFET from Unisonic Technologies is a high-voltage transistor designed for switching applications. It has a maximum voltage rating of 650V, continuous current rating of 7.4A, and features low on-resistance, fast switching times, and high ruggedness. The document provides detailed specifications, characteristics, test methods and typical performance curves for the device.
Original N-Channel Mosfet FQU13N10LTU 13N10 100V 10A TO-251 New ON Semiconduc...AUTHELECTRONIC
This document provides specifications and performance characteristics for the FQD13N10L/FQU13N10L N-Channel QFET MOSFET from Fairchild Semiconductor. The MOSFET has a maximum drain-source voltage of 100V, can provide continuous drain current up to 10A, and has an on-resistance as low as 180mOhm. Graphs of electrical characteristics like capacitance, gate charge, and safe operating area are included, showing performance over temperature and operating conditions. Testing methods are also described for key parameters. The device is suitable for applications like power supplies, motor control, and switching regulators.
Original N Channel Mosfet IRF630N IRF630 TO-220 9.3A 200V New IRAUTHELECTRONIC
Original N Channel Mosfet IRF630N IRF630 TO-220 9.3A 200V New IR
https://authelectronic.com/original-n-channel-mosfet-irf630n-irf630-to-220-9-3a-200v-new-ir
Original P-Channel Mosfet IRFR5305TRPBF FR5305 5305 FR530S 55V 31A TO-252 New IRAUTHELECTRONIC
This document summarizes the specifications and characteristics of International Rectifier's HEXFET Power MOSFETs. The MOSFETs feature ultra-low on-resistance, fast switching speeds, and ruggedized designs. They are available in D-Pak and I-Pak surface mount packages and are suitable for a wide variety of applications. Key parameters include continuous drain current up to 31 amps, power dissipation up to 110 watts, and avalanche energy rating of 280 millijoules.
Original Mosfet IRL3713PBF 3713 30V 180A TO-220 New IRAUTHELECTRONIC
This document provides specifications for the IRL3713PbF, IRL3713SPbF, and IRL3713LPbF N-channel HEXFET power MOSFETs. It includes maximum ratings, electrical characteristics, switching characteristics, and package outlines for the D2Pak, TO-220AB, and TO-262 packages. Application benefits include ultra-low gate impedance, very low RDS(on), fully characterized avalanche performance, and lead-free packaging options.
Original Mosfet N FDPF8N50NZ 8N50 8N50NZ 10V 4A TO-220 New FairchildAUTHELECTRONIC
Original Mosfet N FDPF8N50NZ 8N50 8N50NZ 10V 4A TO-220 New Fairchild
https://authelectronic.com/original-mosfet-n-fdpf8n50nz-8n50-8n50nz-10v-4a-to-220-new
Original Mosfet IRF9530N TO220 14A 100V NewAUTHELECTRONIC
This document provides specifications for an IRF9530NPbF HEXFET power MOSFET. It includes:
- Key parameters such as a continuous drain current of -14A and power dissipation of 79W
- Electrical characteristics including on-resistance, breakdown voltage, and switching times
- Thermal characteristics like a junction-to-case thermal resistance of 1.9°C/W
- Safe operating area and avalanche energy graphs
- Package details and dimensions for the TO-220 package
This document provides product specifications for the PSMN005-55B and PSMN005-55P N-channel logic level TrenchMOS transistors. It includes key features, general descriptions, limiting values, electrical characteristics, thermal characteristics, and mechanical data. The transistors use Philips' Trench technology to achieve very low on-state resistance in the SOT78 and SOT404 packages for applications such as DC-DC converters and switched mode power supplies.
Original Mosfet N-Channel SVF740T 740 400V 10A TO-220 NewAUTHELECTRONIC
This document provides specifications for the SVF740T/F N-channel MOSFETs produced by Silan Microelectronics. Key details include:
- The SVF740T and SVF740F have maximum drain currents of 10A and 6.3A respectively, and maximum drain-source voltages of 400V.
- Electrical characteristics are provided such as a typical on-resistance of 0.45Ω and gate threshold voltage range of 2-4V.
- Thermal characteristics include a junction-to-case thermal resistance of 0.96°C/W for the SVF740T and 2.84°C/W for the SVF740F.
- Typical performance
Original N-Channel Mosfet PFF7N80 800V 7A TO-220F New WING ON GROUPAUTHELECTRONIC
This document describes the PFP7N80/PFF7N80 800V N-channel MOSFETs from Wing On STS. Key specifications include a continuous drain current of 7A, on-resistance of 1.55Ω typical, and gate charge of 35nC typical. The document provides detailed electrical characteristics, thermal characteristics, application information, and test methodology for the devices.
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...AUTHELECTRONIC
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 New ST
https://authelectronic.com/original-n-channel-mosfet-fqd10n60c-std10nm60n-10nm60-10n60-10a-600v-to-252-new-st
Original Power MOSFET IRFP460PBF IRFP460 460 500V 20A TO-247 New Vishay Silic...AUTHELECTRONIC
Original Power MOSFET IRFP460PBF IRFP460 460 500V 20A TO-247 New Vishay Siliconix
https://authelectronic.com/original-power-mosfet-irfp460pbf-irfp460-460-500v-20a-to-247-new-vishay-siliconix
Original P-CHANNEL MOSFET IRF5210PBF IRF5210 5210 100V 38A TO-220 New IRAUTHELECTRONIC
Original P-CHANNEL MOSFET IRF5210PBF IRF5210 5210 100V 38A TO-220 New IR
https://authelectronic.com/original-p-channel-mosfet-irf5210pbf-irf5210-5210-100v-38a-to-220-new-ir
Original Mosfet F3205S 3205 IRF3205S IRF3205 55V 110A D2Pak NewAUTHELECTRONIC
This document provides information on IRF3205 power MOSFETs from International Rectifier. It summarizes the key specifications and performance characteristics of the MOSFETs, including an on-resistance of 8.0 mOhms, a continuous drain current of 110A, and an operating junction temperature range of -55°C to +175°C. The document also provides the package details, electrical characteristics, and test conditions/diagrams to evaluate the switching performance and safe operating area of the devices.
Original MOSFET N-CHANNEL FQP70N10 70N10 TO-220 70A 100V NewAUTHELECTRONIC
This document summarizes the specifications and characteristics of the FQP70N10 100V N-Channel MOSFET from Fairchild Semiconductor. It is an enhancement mode power MOSFET produced using Fairchild's proprietary DMOS technology to minimize on-state resistance and provide superior switching performance. Key features include a maximum drain current of 57A, on-resistance of 0.023 ohms, and avalanche tested capability. Electrical characteristics, switching characteristics, thermal characteristics and maximum ratings are provided.
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New FairchildAUTHELECTRONIC
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New Fairchild
https://authelectronic.com/original-n-channel-mosfet-fqpf12n60-12n60-12a-600v-new-fairchild
Original N-Channel Mosfet 7N65L-TF1-T UTC7N65L 7.4A 650V TO-263 New UTCAUTHELECTRONIC
The 7N65 power MOSFET from Unisonic Technologies is a high-voltage transistor designed for switching applications. It has a maximum voltage rating of 650V, continuous current rating of 7.4A, and features low on-resistance, fast switching times, and high ruggedness. The document provides detailed specifications, characteristics, test methods and typical performance curves for the device.
Original N-Channel Mosfet FQU13N10LTU 13N10 100V 10A TO-251 New ON Semiconduc...AUTHELECTRONIC
This document provides specifications and performance characteristics for the FQD13N10L/FQU13N10L N-Channel QFET MOSFET from Fairchild Semiconductor. The MOSFET has a maximum drain-source voltage of 100V, can provide continuous drain current up to 10A, and has an on-resistance as low as 180mOhm. Graphs of electrical characteristics like capacitance, gate charge, and safe operating area are included, showing performance over temperature and operating conditions. Testing methods are also described for key parameters. The device is suitable for applications like power supplies, motor control, and switching regulators.
Original N Channel Mosfet IRF630N IRF630 TO-220 9.3A 200V New IRAUTHELECTRONIC
Original N Channel Mosfet IRF630N IRF630 TO-220 9.3A 200V New IR
https://authelectronic.com/original-n-channel-mosfet-irf630n-irf630-to-220-9-3a-200v-new-ir
Original P-Channel Mosfet IRFR5305TRPBF FR5305 5305 FR530S 55V 31A TO-252 New IRAUTHELECTRONIC
This document summarizes the specifications and characteristics of International Rectifier's HEXFET Power MOSFETs. The MOSFETs feature ultra-low on-resistance, fast switching speeds, and ruggedized designs. They are available in D-Pak and I-Pak surface mount packages and are suitable for a wide variety of applications. Key parameters include continuous drain current up to 31 amps, power dissipation up to 110 watts, and avalanche energy rating of 280 millijoules.
Original Mosfet IRL3713PBF 3713 30V 180A TO-220 New IRAUTHELECTRONIC
This document provides specifications for the IRL3713PbF, IRL3713SPbF, and IRL3713LPbF N-channel HEXFET power MOSFETs. It includes maximum ratings, electrical characteristics, switching characteristics, and package outlines for the D2Pak, TO-220AB, and TO-262 packages. Application benefits include ultra-low gate impedance, very low RDS(on), fully characterized avalanche performance, and lead-free packaging options.
Original Mosfet N FDPF8N50NZ 8N50 8N50NZ 10V 4A TO-220 New FairchildAUTHELECTRONIC
Original Mosfet N FDPF8N50NZ 8N50 8N50NZ 10V 4A TO-220 New Fairchild
https://authelectronic.com/original-mosfet-n-fdpf8n50nz-8n50-8n50nz-10v-4a-to-220-new
Original Mosfet IRF9530N TO220 14A 100V NewAUTHELECTRONIC
This document provides specifications for an IRF9530NPbF HEXFET power MOSFET. It includes:
- Key parameters such as a continuous drain current of -14A and power dissipation of 79W
- Electrical characteristics including on-resistance, breakdown voltage, and switching times
- Thermal characteristics like a junction-to-case thermal resistance of 1.9°C/W
- Safe operating area and avalanche energy graphs
- Package details and dimensions for the TO-220 package
This document provides product specifications for the PSMN005-55B and PSMN005-55P N-channel logic level TrenchMOS transistors. It includes key features, general descriptions, limiting values, electrical characteristics, thermal characteristics, and mechanical data. The transistors use Philips' Trench technology to achieve very low on-state resistance in the SOT78 and SOT404 packages for applications such as DC-DC converters and switched mode power supplies.
Original Mosfet N-Channel SVF740T 740 400V 10A TO-220 NewAUTHELECTRONIC
This document provides specifications for the SVF740T/F N-channel MOSFETs produced by Silan Microelectronics. Key details include:
- The SVF740T and SVF740F have maximum drain currents of 10A and 6.3A respectively, and maximum drain-source voltages of 400V.
- Electrical characteristics are provided such as a typical on-resistance of 0.45Ω and gate threshold voltage range of 2-4V.
- Thermal characteristics include a junction-to-case thermal resistance of 0.96°C/W for the SVF740T and 2.84°C/W for the SVF740F.
- Typical performance
Original N-Channel Mosfet PFF7N80 800V 7A TO-220F New WING ON GROUPAUTHELECTRONIC
This document describes the PFP7N80/PFF7N80 800V N-channel MOSFETs from Wing On STS. Key specifications include a continuous drain current of 7A, on-resistance of 1.55Ω typical, and gate charge of 35nC typical. The document provides detailed electrical characteristics, thermal characteristics, application information, and test methodology for the devices.
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...AUTHELECTRONIC
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 New ST
https://authelectronic.com/original-n-channel-mosfet-fqd10n60c-std10nm60n-10nm60-10n60-10a-600v-to-252-new-st
Original Power MOSFET IRFP460PBF IRFP460 460 500V 20A TO-247 New Vishay Silic...AUTHELECTRONIC
Original Power MOSFET IRFP460PBF IRFP460 460 500V 20A TO-247 New Vishay Siliconix
https://authelectronic.com/original-power-mosfet-irfp460pbf-irfp460-460-500v-20a-to-247-new-vishay-siliconix
Original P-CHANNEL MOSFET IRF5210PBF IRF5210 5210 100V 38A TO-220 New IRAUTHELECTRONIC
Original P-CHANNEL MOSFET IRF5210PBF IRF5210 5210 100V 38A TO-220 New IR
https://authelectronic.com/original-p-channel-mosfet-irf5210pbf-irf5210-5210-100v-38a-to-220-new-ir
Original Mosfet F3205S 3205 IRF3205S IRF3205 55V 110A D2Pak NewAUTHELECTRONIC
This document provides information on IRF3205 power MOSFETs from International Rectifier. It summarizes the key specifications and performance characteristics of the MOSFETs, including an on-resistance of 8.0 mOhms, a continuous drain current of 110A, and an operating junction temperature range of -55°C to +175°C. The document also provides the package details, electrical characteristics, and test conditions/diagrams to evaluate the switching performance and safe operating area of the devices.
Original MOSFET N-CHANNEL FQP70N10 70N10 TO-220 70A 100V NewAUTHELECTRONIC
This document summarizes the specifications and characteristics of the FQP70N10 100V N-Channel MOSFET from Fairchild Semiconductor. It is an enhancement mode power MOSFET produced using Fairchild's proprietary DMOS technology to minimize on-state resistance and provide superior switching performance. Key features include a maximum drain current of 57A, on-resistance of 0.023 ohms, and avalanche tested capability. Electrical characteristics, switching characteristics, thermal characteristics and maximum ratings are provided.
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New FairchildAUTHELECTRONIC
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New Fairchild
https://authelectronic.com/original-n-channel-mosfet-fqpf12n60-12n60-12a-600v-new-fairchild
Original N-Channel MOSFET FQPF3N90 3N90 900V 3A TO-220 New FairchildAUTHELECTRONIC
This document provides specifications for the FQPF3N90 900V N-Channel MOSFET from Fairchild Semiconductor. It includes maximum ratings, electrical characteristics, thermal characteristics, and typical performance curves. The MOSFET uses Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance while withstanding high energy pulses. It is well-suited for high efficiency switch mode power supplies.
Original N-Channel Mosfet IRFI4019H-117P 4019 8A 150V TO-220 NewAUTHELECTRONIC
This document provides information on a digital audio MOSFET in a TO-220 Full-Pak 5 pin package designed for class D audio amplifier applications. The MOSFET integrates two power switches in a half-bridge configuration to reduce part count. Key parameters like low RDS(on), Qg, Qsw, and Qrr are optimized to improve efficiency, THD, and reduce EMI. Figures and tables of electrical characteristics like breakdown voltage, on-resistance, gate charge, and switching performance are provided. The document also includes test circuits and considerations for evaluating the MOSFET.
The document describes the UCC3895 BiCMOS advanced phase-shift PWM controller. It has features such as programmable output turn-on delay, adaptive delay set, bidirectional oscillator synchronization, and voltage-mode or current-mode control. It can operate at frequencies up to 1 MHz with typical operating current of 5 mA at 500 kHz. The UCC3895 is a phase-shift PWM controller that implements full-bridge power stage control by phase shifting one half-bridge with respect to the other, allowing constant frequency pulse-width modulation with zero-voltage switching for high efficiency at high frequencies. It improves on previous controller families with additional features such as enhanced control logic and adaptive delay set.
Original N - Channel Mosfet IRFR3709ZTRPBF FR3709Z 3709 FR3709 TO-252 New IRAUTHELECTRONIC
Original N - Channel Mosfet IRFR3709ZTRPBF FR3709Z 3709 FR3709 TO-252 New IR
https://authelectronic.com/original-n-channel-mosfet-irfr3709ztrpbf-fr3709z-3709-fr3709-to-252-new-ir
This document provides information on the 15N60 power MOSFET from Unisonic Technologies Co., Ltd. including:
- It is an N-channel power MOSFET using advanced DMOS technology to provide low on-state resistance and superior switching performance.
- Key features include a continuous drain current of 15A, on-state resistance of 0.44Ω, and avalanche energy rating of 637mJ.
- It is suited for applications such as active power factor correction and high efficiency switched mode power supplies.
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK ST...AUTHELECTRONIC
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK STF16N65M5 16N65M5 16N65 710V 12A TO-220FP New STMicroelectronics
https://authelectronic.com/original-n-channel-650-v-0-230-ohm-12-a-mdmesh-v-power-mosfet-in-dpak-dpak-stf16n65m5-16n65m5-16n65-710v-12a-to-220fp-new-stmicroelectronics
Original MOSFET N-CHANNEL IRF530NPBF IRF530N IRF530 17A 100V TO-220 NewAUTHELECTRONIC
This document provides specifications for an IRF530NPbF HEXFET Power MOSFET. Key specifications include:
- Maximum drain-source voltage of 100V
- On-resistance of 90mOhm typical
- Continuous drain current of 17A
- Thermal resistances of 2.15°C/W junction to case and 62°C/W junction to ambient
- 175°C operating junction temperature
- TO-220 package outline drawing and specifications are also provided.
Similar to Original N-Channel Mosfet FQPF5N50C 5N50C 500V 3A TO-220F New Fairchild (17)
Original Power Supply IC LNK632DG LNK632 632 SOP-7 NewAUTHELECTRONIC
The LNK632DG is an energy efficient constant voltage/constant current switcher for adapters and chargers. It dramatically simplifies CV converter designs by eliminating secondary control circuitry and compensation components. Some key features include auto-restart protection, hysteretic thermal shutdown, tight output regulation that compensates for cable voltage drops and temperature variations, and high efficiency down to light loads. It is well-suited for charger applications like cell phones, PDAs, and MP3 players.
The document summarizes an low-profile relay model called G5RL that is suitable for various applications. It has several models including standard, low noise, high inrush, and high capacity. Key specifications include a height of 15.7mm, 8mm creepage distance, 10kV impulse withstand voltage. It provides information on ordering, ratings for coils and contacts, characteristics, dimensions, and engineering data.
Original Transition-Mode PFC Controller IC LD7591GS 7591 SOP-8 New LeadtrendAUTHELECTRONIC
This document provides information about the LD7591 transition-mode PFC controller, including:
- It is a voltage mode PFC controller that operates in transition mode with protections like OVP, OCP, and brown-in protection.
- It has features like low startup current, over voltage protection, open feedback protection, disable function, and integrated current sensing.
- Typical applications include adapters over 65W, open frame switching power supplies, LCD TV power supplies, and LED power supplies.
Original NPN Darlington Transistor MC1413DR2G 1413DR2G NCV1413BDG 1413BDG 141...AUTHELECTRONIC
The document describes a high voltage, high current Darlington transistor array that is well-suited for driving lamps, relays, or printer hammers. It has 7 NPN Darlington connected transistors with a high breakdown voltage and internal suppression diodes to ensure safety with inductive loads. It can drive incandescent lamps with peak inrush currents up to 500mA per transistor.
Original EEPROM IC BR93L76RFJ 93L76 RL76 SOP-8 New RohmAUTHELECTRONIC
This document provides important safety information regarding the intended use of ROHM products. It states that the products are designed for ordinary electronic equipment but should not be used in applications requiring extremely high reliability where malfunctions could directly endanger human life, such as medical devices. It also notes the products are not designed with antiradiation properties and certain exports may require controls under Japanese law. Contact information is provided for sales representatives.
Original Advanced IGBT/Mosfet Driver TD350E 350E SOP-14 New ST MicroelectronicsAUTHELECTRONIC
This document provides information on an advanced IGBT/MOSFET gate driver called the TD350E, including its key features, applications, description, and specifications. The TD350E is designed for applications such as inverters, motor control, and UPS systems. It provides 1.5A/2.3A gate drive, active Miller clamping, two-level turn-off protection, desaturation detection, and fault status output. Electrical characteristics and timing diagrams are included to specify the device's performance.
Original N-Channel Mosfet 2SK3562 3562 TO-220 New ToshibaAUTHELECTRONIC
This document provides specifications and performance characteristics for the Toshiba 2SK3562 N-channel MOSFET transistor. Key details include:
- It is an enhancement mode transistor intended for switching regulator applications with low on-resistance of 0.9 ohms and forward transfer admittance of 5.0S.
- Maximum ratings include a drain-source voltage of 600V, drain current of 6A continuous or 24A pulse, and drain power dissipation of 40W.
- Electrical characteristics at 25C include a gate threshold voltage of 2.0-4.0V, on-resistance of 0.9-1.25 ohms, and input/output capacit
Original N-Channel Mosfet FDPF33N25 33N25 TO-220 New FairChildAUTHELECTRONIC
This document provides information on the FDPF33N25250VN-Channel MOSFET from Fairchild Semiconductor. It is a 250V N-Channel MOSFET with low on-resistance of 0.094Ω and fast switching capabilities. It uses Fairchild's proprietary planar stripe DMOS technology to minimize resistance and maximize performance for applications such as high efficiency power supplies. Key specifications and performance characteristics are provided.
Original N-Channel Mosfet IRFB4020PBF 4020 TO-220-3 New International RectifierAUTHELECTRONIC
This document provides specifications for a digital audio MOSFET designed for use in class D audio amplifier applications. The MOSFET has been optimized to achieve low on-resistance, gate charge, and reverse recovery charge for improved efficiency, total harmonic distortion, and electromagnetic interference. Additional features include a 175°C operating temperature and repetitive avalanche capability making it robust and reliable for audio amplifiers. Tables and graphs provide electrical characteristics and performance metrics.
Original Logic IC SN74LVC14A SN54LVC14A 74LVC14A 54LVC14A SOP-14 New Texas In...AUTHELECTRONIC
The document provides information on the SN54LVC14A and SN74LVC14A hex Schmitt-trigger inverter integrated circuits. It describes their operating voltage ranges from 1.65V to 3.6V, maximum propagation delay of 6.4ns at 3.3V, ESD protection exceeding 2000V human-body and 200V machine models, and thermal characteristics with package impedance ranging from 47°C/W to 127°C/W. Ordering information and packaging details are provided for various operating temperature ranges from -55°C to 125°C. Electrical characteristics like input thresholds, output voltages, input and output currents, and input capacitance are specified over operating conditions.
Original High Voltage Isolation IC ACS710T KLA-12CB 710T SOP-16 NewAUTHELECTRONIC
The Allegro ACS710 current sensor provides economical and precise current sensing for industrial, commercial, and communications systems. It uses a precision linear Hall sensor integrated circuit with a copper conduction path near the surface to linearly track the magnetic field generated by the applied current. The sensor offers high immunity to electrical noise and low offset drift, and provides an analog output voltage and integrated overcurrent detection. It is available in a small surface-mount package.
Original Voltage Regulator & Controller IC TPS54231DR 54231DR 54231 SOP-8 Ne...AUTHELECTRONIC
The document provides specifications and design information for the TPS54231 step-down DC-DC converter from Texas Instruments. The TPS54231 is a 2-A, 28-V input converter with an integrated high-side MOSFET. It features adjustable output voltage down to 0.8V, pulse skipping for high efficiency at light loads, fixed 570kHz switching frequency, and various protection mechanisms. Application areas include consumer, industrial, and automotive equipment requiring distributed power supplies. The device is available in an 8-pin SOIC package.
Original Microcontroller IC R5F104BDA R5F 104BDA 104 NewAUTHELECTRONIC
This document provides an overview and specifications for the Renesas RL78/G14 microcontroller, including:
- Ultra-low power consumption down to 66 μA/MHz and 0.60 μA for RTC + LVD. Operates from 1.6V to 5.5V.
- 16 to 512 KB flash memory, 44 DMIPS performance at 32MHz.
- Various low power modes like HALT, STOP, and SNOOZE.
- On-chip peripherals include timers, ADC, DAC, comparators, serial interfaces, and I/O ports.
- Packaged in LQFP, LSSOP, QFN packages with pin counts from 30
Original Power Factor Correction IC UCC28061DR 28061 SOP-16 New Texas Instrum...AUTHELECTRONIC
The UCC28061 is a transition-mode PFC controller that features natural interleaving to improve efficiency and reduce component size. It provides complete system-level protections including input brownout, output overvoltage, and thermal shutdown. The device utilizes a natural interleaving technique where both channels operate as masters synchronized to the same frequency, delivering strong matching and fast response.
Original Gate Driver IC TD62083APG 62083APG 62083 DIP-18 New ToshibaAUTHELECTRONIC
This document provides specifications for the TD62083APG/AFG and TD62084APG/AFG integrated circuits from Toshiba. They are 8-channel Darlington sink drivers comprised of NPN Darlington pairs, with each channel capable of 500mA of output current. Key features include integral clamp diodes, compatible inputs for various logic types, DIP-18 and SOP-18 packaging options. Electrical characteristics, test circuits, precautions and package dimensions are provided.
Original Zener Diode 1N5366B 5366B 5366 5W 39V NewAUTHELECTRONIC
This document provides information on ON Semiconductor's 1N53 Series 5 Watt Zener diodes. It includes specifications for over 40 Zener diode models with voltages ranging from 3.3V to 200V. The diodes feature tight voltage limits, low leakage current, and are packaged in axial lead plastic packages for protection in various environments. Maximum ratings and electrical characteristics like Zener voltage, impedance, and surge current are specified for each model in tables.
Original Audio Amplifier IC TDA7850 7850 SIP-25 New ST MicroelectronicsAUTHELECTRONIC
The document describes the TDA7850, a MOSFET audio power amplifier chip designed for high power car audio systems. It has a maximum output power of 4 x 50W into 4 ohms or 4 x 80W into 2 ohms. The chip features protections against overheating, short circuits, and other faults. It uses a fully complementary MOSFET output stage for rail-to-rail voltage swing and minimized distortion. Electrical specifications and application information are provided.
A review on techniques and modelling methodologies used for checking electrom...nooriasukmaningtyas
The proper function of the integrated circuit (IC) in an inhibiting electromagnetic environment has always been a serious concern throughout the decades of revolution in the world of electronics, from disjunct devices to today’s integrated circuit technology, where billions of transistors are combined on a single chip. The automotive industry and smart vehicles in particular, are confronting design issues such as being prone to electromagnetic interference (EMI). Electronic control devices calculate incorrect outputs because of EMI and sensors give misleading values which can prove fatal in case of automotives. In this paper, the authors have non exhaustively tried to review research work concerned with the investigation of EMI in ICs and prediction of this EMI using various modelling methodologies and measurement setups.
CHINA’S GEO-ECONOMIC OUTREACH IN CENTRAL ASIAN COUNTRIES AND FUTURE PROSPECTjpsjournal1
The rivalry between prominent international actors for dominance over Central Asia's hydrocarbon
reserves and the ancient silk trade route, along with China's diplomatic endeavours in the area, has been
referred to as the "New Great Game." This research centres on the power struggle, considering
geopolitical, geostrategic, and geoeconomic variables. Topics including trade, political hegemony, oil
politics, and conventional and nontraditional security are all explored and explained by the researcher.
Using Mackinder's Heartland, Spykman Rimland, and Hegemonic Stability theories, examines China's role
in Central Asia. This study adheres to the empirical epistemological method and has taken care of
objectivity. This study analyze primary and secondary research documents critically to elaborate role of
china’s geo economic outreach in central Asian countries and its future prospect. China is thriving in trade,
pipeline politics, and winning states, according to this study, thanks to important instruments like the
Shanghai Cooperation Organisation and the Belt and Road Economic Initiative. According to this study,
China is seeing significant success in commerce, pipeline politics, and gaining influence on other
governments. This success may be attributed to the effective utilisation of key tools such as the Shanghai
Cooperation Organisation and the Belt and Road Economic Initiative.
Electric vehicle and photovoltaic advanced roles in enhancing the financial p...IJECEIAES
Climate change's impact on the planet forced the United Nations and governments to promote green energies and electric transportation. The deployments of photovoltaic (PV) and electric vehicle (EV) systems gained stronger momentum due to their numerous advantages over fossil fuel types. The advantages go beyond sustainability to reach financial support and stability. The work in this paper introduces the hybrid system between PV and EV to support industrial and commercial plants. This paper covers the theoretical framework of the proposed hybrid system including the required equation to complete the cost analysis when PV and EV are present. In addition, the proposed design diagram which sets the priorities and requirements of the system is presented. The proposed approach allows setup to advance their power stability, especially during power outages. The presented information supports researchers and plant owners to complete the necessary analysis while promoting the deployment of clean energy. The result of a case study that represents a dairy milk farmer supports the theoretical works and highlights its advanced benefits to existing plants. The short return on investment of the proposed approach supports the paper's novelty approach for the sustainable electrical system. In addition, the proposed system allows for an isolated power setup without the need for a transmission line which enhances the safety of the electrical network
Advanced control scheme of doubly fed induction generator for wind turbine us...IJECEIAES
This paper describes a speed control device for generating electrical energy on an electricity network based on the doubly fed induction generator (DFIG) used for wind power conversion systems. At first, a double-fed induction generator model was constructed. A control law is formulated to govern the flow of energy between the stator of a DFIG and the energy network using three types of controllers: proportional integral (PI), sliding mode controller (SMC) and second order sliding mode controller (SOSMC). Their different results in terms of power reference tracking, reaction to unexpected speed fluctuations, sensitivity to perturbations, and resilience against machine parameter alterations are compared. MATLAB/Simulink was used to conduct the simulations for the preceding study. Multiple simulations have shown very satisfying results, and the investigations demonstrate the efficacy and power-enhancing capabilities of the suggested control system.
Harnessing WebAssembly for Real-time Stateless Streaming PipelinesChristina Lin
Traditionally, dealing with real-time data pipelines has involved significant overhead, even for straightforward tasks like data transformation or masking. However, in this talk, we’ll venture into the dynamic realm of WebAssembly (WASM) and discover how it can revolutionize the creation of stateless streaming pipelines within a Kafka (Redpanda) broker. These pipelines are adept at managing low-latency, high-data-volume scenarios.
Presentation of IEEE Slovenia CIS (Computational Intelligence Society) Chapte...University of Maribor
Slides from talk presenting:
Aleš Zamuda: Presentation of IEEE Slovenia CIS (Computational Intelligence Society) Chapter and Networking.
Presentation at IcETRAN 2024 session:
"Inter-Society Networking Panel GRSS/MTT-S/CIS
Panel Session: Promoting Connection and Cooperation"
IEEE Slovenia GRSS
IEEE Serbia and Montenegro MTT-S
IEEE Slovenia CIS
11TH INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONIC AND COMPUTING ENGINEERING
3-6 June 2024, Niš, Serbia
Literature Review Basics and Understanding Reference Management.pptxDr Ramhari Poudyal
Three-day training on academic research focuses on analytical tools at United Technical College, supported by the University Grant Commission, Nepal. 24-26 May 2024
DEEP LEARNING FOR SMART GRID INTRUSION DETECTION: A HYBRID CNN-LSTM-BASED MODELgerogepatton
As digital technology becomes more deeply embedded in power systems, protecting the communication
networks of Smart Grids (SG) has emerged as a critical concern. Distributed Network Protocol 3 (DNP3)
represents a multi-tiered application layer protocol extensively utilized in Supervisory Control and Data
Acquisition (SCADA)-based smart grids to facilitate real-time data gathering and control functionalities.
Robust Intrusion Detection Systems (IDS) are necessary for early threat detection and mitigation because
of the interconnection of these networks, which makes them vulnerable to a variety of cyberattacks. To
solve this issue, this paper develops a hybrid Deep Learning (DL) model specifically designed for intrusion
detection in smart grids. The proposed approach is a combination of the Convolutional Neural Network
(CNN) and the Long-Short-Term Memory algorithms (LSTM). We employed a recent intrusion detection
dataset (DNP3), which focuses on unauthorized commands and Denial of Service (DoS) cyberattacks, to
train and test our model. The results of our experiments show that our CNN-LSTM method is much better
at finding smart grid intrusions than other deep learning algorithms used for classification. In addition,
our proposed approach improves accuracy, precision, recall, and F1 score, achieving a high detection
accuracy rate of 99.50%.
Embedded machine learning-based road conditions and driving behavior monitoringIJECEIAES
Car accident rates have increased in recent years, resulting in losses in human lives, properties, and other financial costs. An embedded machine learning-based system is developed to address this critical issue. The system can monitor road conditions, detect driving patterns, and identify aggressive driving behaviors. The system is based on neural networks trained on a comprehensive dataset of driving events, driving styles, and road conditions. The system effectively detects potential risks and helps mitigate the frequency and impact of accidents. The primary goal is to ensure the safety of drivers and vehicles. Collecting data involved gathering information on three key road events: normal street and normal drive, speed bumps, circular yellow speed bumps, and three aggressive driving actions: sudden start, sudden stop, and sudden entry. The gathered data is processed and analyzed using a machine learning system designed for limited power and memory devices. The developed system resulted in 91.9% accuracy, 93.6% precision, and 92% recall. The achieved inference time on an Arduino Nano 33 BLE Sense with a 32-bit CPU running at 64 MHz is 34 ms and requires 2.6 kB peak RAM and 139.9 kB program flash memory, making it suitable for resource-constrained embedded systems.
Redefining brain tumor segmentation: a cutting-edge convolutional neural netw...IJECEIAES
Medical image analysis has witnessed significant advancements with deep learning techniques. In the domain of brain tumor segmentation, the ability to
precisely delineate tumor boundaries from magnetic resonance imaging (MRI)
scans holds profound implications for diagnosis. This study presents an ensemble convolutional neural network (CNN) with transfer learning, integrating
the state-of-the-art Deeplabv3+ architecture with the ResNet18 backbone. The
model is rigorously trained and evaluated, exhibiting remarkable performance
metrics, including an impressive global accuracy of 99.286%, a high-class accuracy of 82.191%, a mean intersection over union (IoU) of 79.900%, a weighted
IoU of 98.620%, and a Boundary F1 (BF) score of 83.303%. Notably, a detailed comparative analysis with existing methods showcases the superiority of
our proposed model. These findings underscore the model’s competence in precise brain tumor localization, underscoring its potential to revolutionize medical
image analysis and enhance healthcare outcomes. This research paves the way
for future exploration and optimization of advanced CNN models in medical
imaging, emphasizing addressing false positives and resource efficiency.
Understanding Inductive Bias in Machine LearningSUTEJAS
This presentation explores the concept of inductive bias in machine learning. It explains how algorithms come with built-in assumptions and preferences that guide the learning process. You'll learn about the different types of inductive bias and how they can impact the performance and generalizability of machine learning models.
The presentation also covers the positive and negative aspects of inductive bias, along with strategies for mitigating potential drawbacks. We'll explore examples of how bias manifests in algorithms like neural networks and decision trees.
By understanding inductive bias, you can gain valuable insights into how machine learning models work and make informed decisions when building and deploying them.