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OPTICAL CONTROLAND TUNING OF THERMAL-
PIEZORESISTIVE SELFSUSTAINED OSCILLATORS
Author: Harris J. Hall, Luda Wang, J. Scott Bunch,
Siavash Pourkamali, and Victor M. Bright
Reporter: 朱家君
Date: 2015/4/14
Outline
• Introduction
• Theory
• Experiment
• Results (A3 and C6)
• Conclusion
Introduction
• Electrically driven thermal-piezoresistive self-sustained
oscillators
• Optical control (HeNe, 632nm wavelength)
→ tune frequency
→ on/off control
• Photoexcitation of charge carriers
→ piezoresistive coefficient change
Device (A3, n-type SOI)
in-plane longitudinal mode
Theory
• Motional conductance:
(E: temperature dependent)
• Photoexcitation of carriers → silicon’s resistivity ↓
HeNe energy (~1.96 eV) > extrinsic (~0.15 eV)
and intrinsic (~1.12 eV)
• Illumination ↑ , IDC ↑ , power dissipation changed,
Joule heating changed in turn, steady-state temperature
Piezoresistance factor P(N,T)
• Piezoresistive coefficient:
1. Total carrier concentration from excited carriers ↑
2. Steady-state temperature changes
• Piezoresistive coefficient ↓
→ gm ↓
→ not satisfied gmRA < -1
→ finally shutoff
carrier concentration
Experiment
Results (C6, DC=31.61V)
DC current Peak frequency
(1D Lorentzian profile)
Results (C6, DC=31.61V)
V(AC, max) Oscillation off/on
• Photoexcitation of carriers
→ device resistance ↓
→ DC power dissipation in turn ↓
→ temperature ↓
→ stiffens the Young’s modulus
→ frequency ↑.
Results (A3, DC=37.96V)
carrier excitation saturation limit → scattering loss mechanisms to dominate
and cause an increase in electrical resistance
Conclusion
• This work demonstrates thermal-piezoresistive oscillators
can be frequency tuned and controllably quenched using
continuous wave HeNe illumination of the structure.
• It is predicated upon direct influence of the piezoresistivity
of the material.
• This method of control potentially offers a unique way of
integrating these devices with on-chip photonic circuitry.
END
Application

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Optical control and tuning of thermal piezoresistive selfsustained oscillators

  • 1. OPTICAL CONTROLAND TUNING OF THERMAL- PIEZORESISTIVE SELFSUSTAINED OSCILLATORS Author: Harris J. Hall, Luda Wang, J. Scott Bunch, Siavash Pourkamali, and Victor M. Bright Reporter: 朱家君 Date: 2015/4/14
  • 2. Outline • Introduction • Theory • Experiment • Results (A3 and C6) • Conclusion
  • 3. Introduction • Electrically driven thermal-piezoresistive self-sustained oscillators • Optical control (HeNe, 632nm wavelength) → tune frequency → on/off control • Photoexcitation of charge carriers → piezoresistive coefficient change
  • 4. Device (A3, n-type SOI) in-plane longitudinal mode
  • 5. Theory • Motional conductance: (E: temperature dependent) • Photoexcitation of carriers → silicon’s resistivity ↓ HeNe energy (~1.96 eV) > extrinsic (~0.15 eV) and intrinsic (~1.12 eV) • Illumination ↑ , IDC ↑ , power dissipation changed, Joule heating changed in turn, steady-state temperature
  • 6. Piezoresistance factor P(N,T) • Piezoresistive coefficient: 1. Total carrier concentration from excited carriers ↑ 2. Steady-state temperature changes • Piezoresistive coefficient ↓ → gm ↓ → not satisfied gmRA < -1 → finally shutoff carrier concentration
  • 8. Results (C6, DC=31.61V) DC current Peak frequency (1D Lorentzian profile)
  • 9. Results (C6, DC=31.61V) V(AC, max) Oscillation off/on
  • 10. • Photoexcitation of carriers → device resistance ↓ → DC power dissipation in turn ↓ → temperature ↓ → stiffens the Young’s modulus → frequency ↑.
  • 11. Results (A3, DC=37.96V) carrier excitation saturation limit → scattering loss mechanisms to dominate and cause an increase in electrical resistance
  • 12. Conclusion • This work demonstrates thermal-piezoresistive oscillators can be frequency tuned and controllably quenched using continuous wave HeNe illumination of the structure. • It is predicated upon direct influence of the piezoresistivity of the material. • This method of control potentially offers a unique way of integrating these devices with on-chip photonic circuitry.
  • 13. END

Editor's Notes

  1. 1. Thermal actuated and piezoresistive sensing oscillator is used as a device in this work. 2. The application of HeNe (632nm wavelength) laser illumination to devices can provide frequency tuning and on/off control ability. 3. Photoexcitation of charge carriers is presented as the physical mechanism to control the piezoresistive coefficient and electrical resistivity enabling these abilities.
  2. 1. These devices(C6 and A3) were intended to operate in the in-plane longitudinal structural mode through cyclic Joule heating of the actuator arms, however the actual mechanical mode of operation is likely of an alternate shape. 2. The devices were fabricated from n-type (phosphorus doped) single crystal silicon using an SOI wafer based process. 3. The strong negative piezoresistive coefficient of this material enables the ability for self-sustained oscillation under constant DC bias through internal feedback.
  3. The performance of these devices under photoillumination can be considered from the perspective of the device’s motional conductance. Qm : mechanical quality factor IDC : DC current Cth : effective thermal capacitance E : Young’s modulus πl : longitudinal piezoresistive coefficient α : thermal expansion coefficient It is based upon a lumped model for the actuator arms at the center of the device. Thus it is the photon interaction that occurs locally to this area that is of primary interest. the resistivity of the silicon should decrease due to photoexcitation of carriers since the photon energy of HeNe laser light (~1.96 eV) exceeds both the extrinsic bandgap (~0.15 eV at 300K) and the intrinsic bandgap of (~1.12 eV).
  4. The adjusted piezoresistance factor P(N,T) for ntype silicon as a function of carrier concentration and temperature This formulation is less accurate for large doping concentrations.
  5. 1. ambient air, room temperature, ambient lighting 2. The filter wheel used to control laser power (not shown) is positioned prior to the beam splitters. 3. The photodiode captures the light reflected off of the underlying substrate and the device surface. 4. The mechanical motion of the device structure modulates the intensity of this reflected laser return at the frequency of oscillation. 5. Device operation was presumed to be in steady-state with measurements collected after several minutes for a given condition. The applied laser power for each filter wheel setting was measured after the experiment using a calibrated optical power meter at the output of the final objective lens.
  6. Laser power↑ → output signal↓, quenching of the self-sustained oscillation → DC current and the frequency of device oscillation↑, although this effect was not consistently linear for both devices at higher laser powers.
  7. IDC and fMAX reach a maximum and then decrease before oscillation shutoff. Since the laser was positioned approximately ~1.5um closer to the actuator arms for Device A3 than Device C6 the actual effective laser fluence on the actuator arms is higher. It was also observed that positioning the laser at a low power setting closer to the actuation arms tended to degrade the electrical output in a similar fashion to that seen with measured data at the outer edge position, with quenching of the electrical output also possible. This observation supports the theory that the oscillation shutoff behavior observed is attributed to the piezoresistive coefficient and not an artifact of thermoelastic effects.