In this paper we consider manufacturing of elements SRAM with increased density of field-effect transistors
consisting these elements. The approach based on manufacturing of the elements in heterostructure with
specific configuration. We consider doping of several required areas of the heterostructure by diffusion or
by ion implantation. After that dopant and radiation defects have been annealed framework optimized
scheme.
On Decreasing of Dimensions of Field-Effect Heterotransistors in Logical CMOP...BRNSS Publication Hub
In this paper, we introduce an approach to decrease the dimensions of CMOP voltage differencing inverting buffered amplifier based on field-effect heterotransistors by increasing density of elements. Dimensions of the elements will be decreased due to manufacture heterostructure with a specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects.
An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal ...ijrap
In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect heterotransistor. Based on analytical solution of the considered boundary problems some recommendations have been formulated to optimize technological processes.
OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach
based on manufacturing field-effect transistors in heterostructures and optimization of technological
processes. At the same time we consider possibility to simplify their constructions.
On Optimization of Manufacturing of a Two-level Current-mode Logic Gates in a...BRNSS Publication Hub
In this paper, we introduce an approach to increase the density of field-effect transistors framework a two-level current-mode logic gates in a multiplexer. Framework the approach we consider manufacturing the inverter in heterostructure with the specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that, dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease the value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during the manufacturing of integrated circuits with account mismatch-induced stress.
ON OPTIMIZATION OF MANUFACTURING OF FIELD EFFECT HETEROTRANSISTORS FRAMEWORK ...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path
operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure
with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
On Optimization of Manufacturing of a Sense-amplifier Based Flip-flopBRNSS Publication Hub
The paper describes an approach for increasing of density of field-effect heterotransistors in a sense-amplifier based flip-flop. To illustrate the approach, we consider manufacturing of an amplifier of power in a heterostructure with specific configuration. One shall dope some specific areas of the heterostructure by diffusion or ion implantation. After that, it should be done optimized annealing of radiation defects and/or dopant. We introduce an approach for decreasing of stress between layers of heterostructure. Furthermore, it has been considered an analytical approach for prognosis of heat and mass transport in heterostructures, which can be take into account mismatch-induced stress.
On optimization ofON OPTIMIZATION OF DOPING OF A HETEROSTRUCTURE DURING MANUF...ijcsitcejournal
We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δ-
doped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After
the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize
annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more
compact p-i-n-heterodiodes
ON OPTIMIZATION OF MANUFACTURING PLANAR DOUBLE-BASE HETEROTRANSISTORS TO DECR...ijaceeejournal
In this paper we consider an approach of manufacturing of double-base hetero transistors to decrease their
dimensions. Framework the approach it should be manufactured a heterostructure with specific configuration.
Farther it is necessary to dope certain areas of the hetero structure by diffusion or by ion implantation.
After finishing of the doping process the dopant and/or radiation defects should be annealed. We consider
an approach of optimization of dopant and/or radiation defects for manufacturing more compact double base
heterotransistors.
On Decreasing of Dimensions of Field-Effect Heterotransistors in Logical CMOP...BRNSS Publication Hub
In this paper, we introduce an approach to decrease the dimensions of CMOP voltage differencing inverting buffered amplifier based on field-effect heterotransistors by increasing density of elements. Dimensions of the elements will be decreased due to manufacture heterostructure with a specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects.
An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal ...ijrap
In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect heterotransistor. Based on analytical solution of the considered boundary problems some recommendations have been formulated to optimize technological processes.
OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach
based on manufacturing field-effect transistors in heterostructures and optimization of technological
processes. At the same time we consider possibility to simplify their constructions.
On Optimization of Manufacturing of a Two-level Current-mode Logic Gates in a...BRNSS Publication Hub
In this paper, we introduce an approach to increase the density of field-effect transistors framework a two-level current-mode logic gates in a multiplexer. Framework the approach we consider manufacturing the inverter in heterostructure with the specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that, dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease the value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during the manufacturing of integrated circuits with account mismatch-induced stress.
ON OPTIMIZATION OF MANUFACTURING OF FIELD EFFECT HETEROTRANSISTORS FRAMEWORK ...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path
operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors.
Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure
with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by
diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
On Optimization of Manufacturing of a Sense-amplifier Based Flip-flopBRNSS Publication Hub
The paper describes an approach for increasing of density of field-effect heterotransistors in a sense-amplifier based flip-flop. To illustrate the approach, we consider manufacturing of an amplifier of power in a heterostructure with specific configuration. One shall dope some specific areas of the heterostructure by diffusion or ion implantation. After that, it should be done optimized annealing of radiation defects and/or dopant. We introduce an approach for decreasing of stress between layers of heterostructure. Furthermore, it has been considered an analytical approach for prognosis of heat and mass transport in heterostructures, which can be take into account mismatch-induced stress.
On optimization ofON OPTIMIZATION OF DOPING OF A HETEROSTRUCTURE DURING MANUF...ijcsitcejournal
We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δ-
doped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After
the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize
annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more
compact p-i-n-heterodiodes
ON OPTIMIZATION OF MANUFACTURING PLANAR DOUBLE-BASE HETEROTRANSISTORS TO DECR...ijaceeejournal
In this paper we consider an approach of manufacturing of double-base hetero transistors to decrease their
dimensions. Framework the approach it should be manufactured a heterostructure with specific configuration.
Farther it is necessary to dope certain areas of the hetero structure by diffusion or by ion implantation.
After finishing of the doping process the dopant and/or radiation defects should be annealed. We consider
an approach of optimization of dopant and/or radiation defects for manufacturing more compact double base
heterotransistors.
Modeling of manufacturing of a field effect transistor to determine condition...ijcsa
In this paper we introduce an approach to model technological process of manufacture of a field-effect
heterotransistor. The modeling gives us possibility to optimize the technological process to decrease length
of channel by using mechanical stress. As accompanying results of the decreasing one can find decreasing
of thickness of the heterotransistors and increasing of their density, which were comprised in integrated
circuits.
AN APPROACH TO OPTIMIZE MANUFACTURE OF AN ACTIVE QUADRATURE SIGNAL GENERATOR ...antjjournal
In this paper we introduce an approach to increase density of field-effect transistors framework an active
quadrature signal generator. Framework the approach we consider manufacturing the generator in heterostructure
with specific configuration. Several required areas of the heterostructure should be doped by diffusion
or ion implantation. After that dopant and radiation defects should by annealed framework optimized
scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered
heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures
during manufacturing of integrated circuits with account mismatch-induced stress.
MODELING OF REDISTRIBUTION OF INFUSED DOPANT IN A MULTILAYER STRUCTURE DOPANT...mathsjournal
In this paper we used an analytical approach to model nonlinear diffusion of dopant in a multilayer structure with account nonstationary annealing of the dopant. The approach do without crosslinking solutions at
the interface between layers of the multilayer structure. In this paper we analyzed influence of pressure of
vapor of infusing dopant during doping of multilayer structure on values of optimal parameters of technological process to manufacture p-n-junctions. It has been shown, that doping of multilayer structures by
diffusion and optimization of annealing of dopant gives us possibility to increase sharpness of p-n-junctions
(single p-n-junctions and p-n-junctions within transistors) and to increase homogeneity of dopant distribution in doped area.
OPTIMIZATION OF MANUFACTURE OF FIELDEFFECT HETEROTRANSISTORS WITHOUT P-NJUNCT...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors
in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions,
which include into their system). In this situation one can also obtain increasing of homogeneity
of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-
junction. Optimization of technological process with using inhomogeneity of heterostructure give us
possibility to manufacture the transistors as more compact.
ANALYSIS OF MANUFACTURING OF VOLTAGE RESTORE TO INCREASE DENSITY OF ELEMENTS ...ijoejournal
We introduce an approach for increasing density of voltage restore elements. The approach based on
manufacturing of a heterostructure, which consist of a substrate and an epitaxial layer with special configuration.
Several required sections of the layer should be doped by diffusion or ion implantation. After
that dopants and/or radiation defects should be annealed.
ON APPROACH TO DECREASE DIMENSIONS OF FIELD-EFFECT TRANSISTORS FRAMEWORK ELEM...ijfcstjournal
In this paper we consider manufacturing of elements SRAM with increased density of field-effect transistors
consisting these elements. The approach based on manufacturing of the elements in heterostructure with
specific configuration. We consider doping of several required areas of the heterostructure by diffusion or
by ion implantation. After that dopant and radiation defects have been annealed framework optimized
scheme.
On prognozisys of manufacturing double basemsejjournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account
nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this heterostructure
by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects. The
approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher compactness
of the considered bipolar transistor.
Optimization of technological process to decrease dimensions of circuits xor ...ijfcstjournal
The paper describes an approach of increasing of integration rate of elements of integrated circuits. The
approach has been illustrated by example of manufacturing of a circuit XOR. Framework the approach one
should manufacture a heterostructure with specific configuration. After that several special areas of the
heterostructure should be doped by diffusion and/or ion implantation and optimization of annealing of dopant
and/or radiation defects. We analyzed redistribution of dopant with account redistribution of radiation
defects to formulate recommendations to decrease dimensions of integrated circuits by using analytical
approaches of modeling of technological process.
MODELING OF MANUFACTURING OF A FIELDEFFECT TRANSISTOR TO DETERMINE CONDITIONS...antjjournal
In this paper we introduce an approach to model technological process of manufacture of a field-effect
heterotransistor. The modeling gives us possibility to optimize the technological process to decrease length
of channel by using mechanical stress. As accompanying results of the decreasing one can find decreasing
of thickness of the heterotransistors and increasing of their density, which were comprised in integrated
circuits.
ON OPTIMIZATION OF MANUFACTURING OF AN AMPLIFIER TO INCREASE DENSITY OF BIPOL...ijoejournal
In this paper we consider a possibility to increase density of bipolar heterotransistor framework an amplifier
due to decreasing of their dimensions. The considered approach based on doping of required areas of
heterostructure with specific configuration by diffusion or ion implantation. The doping finished by optimized
annealing of dopant and/or radiation defects. Analysis of redistribution of dopant with account redistribution
of radiation defects (after implantation of ions of dopant) for optimization of the above annealing
have been done by using recently introduced analytical approach. The approach gives a possibility
to analyze mass and heat transports in a heterostructure without crosslinking of solutions on interfaces
between layers of the heterostructure with account nonlinearity of these transports and variation in time of
their parameters.
On prognozisys of manufacturing doublebaseijaceeejournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account
nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this
heterostructure by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects.
The approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher
compactness of the considered bipolar transistor.
AN APPROACH TO OPTIMIZE OF MANUFACTURING OF A VOLTAGE REFERENCE BASED ON HETE...JaresJournal
In this paper we introduce an approach to increase density of field-effect transistors framework a voltage
reference. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also
consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We
introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
ON INCREASING OF DENSITY OF ELEMENTS IN A MULTIVIBRATOR ON BIPOLAR TRANSISTORSijcsitcejournal
In this paper we consider an approach to increase density of elements of a multivibrator on bipolar transistors.
The considered approach based on manufacturing a heterostructure with necessity configuration,
doping by diffusion or ion implantation of required areas to manufacture the required type of conductivity
(p or n) in the areas and optimization of annealing of dopant and/or radiation defects to manufacture more
compact distributions of concentrations of dopants. We also introduce an analytical approach to prognosis
technological process.
Optimization of Technological Process to Decrease Dimensions of Circuits XOR,...ijfcstjournal
The paper describes an approach of increasing of integration rate of elements of integrated circuits. The
approach has been illustrated by example of manufacturing of a circuit XOR. Framework the approach one
should manufacture a heterostructure with specific configuration. After that several special areas of the
heterostructure should be doped by diffusion and/or ion implantation and optimization of annealing of dopant and/or radiation defects. We analyzed redistribution of dopant with account redistribution of radiation
defects to formulate recommendations to decrease dimensions of integrated circuits by using analytical
approaches of modeling of technological process.
On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors. Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
On Approach to Increase Integration Rate of Elements of an Operational Amplif...BRNSS Publication Hub
In this paper, we introduce an approach to optimize manufacturing of an operational amplifier circuit based on field-effect transistors. Main aims of the optimization are (i) decreasing dimensions of elements of the considered operational amplifier and (ii) increasing of performance and reliability of the considered field-effect transistors. Dimensions of considered field-effect transistors will be decreased due to manufacture of these transistors framework heterostructure with specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects. Performance and reliability of the above field-effect transistors could be increased by optimization of annealing of dopant and/or radiation defects and using inhomogeneity of properties of heterostructure. Choosing of inhomogeneity of properties of heterostructure leads to increasing of compactness of distribution of concentration of dopant. At the same time, one can obtain increasing of homogeneity of the above concentration. In this paper, we also introduce an analytical approach for prognosis of technological process of manufacturing of the considered operational amplifier. The approach gives a possibility to take into account variation of parameters of processes in space and at the same time in space. At the same time, one can take into account nonlinearity of the considered processes.
Modeling of manufacturing of a field effect transistor to determine condition...ijcsa
In this paper we introduce an approach to model technological process of manufacture of a field-effect
heterotransistor. The modeling gives us possibility to optimize the technological process to decrease length
of channel by using mechanical stress. As accompanying results of the decreasing one can find decreasing
of thickness of the heterotransistors and increasing of their density, which were comprised in integrated
circuits.
AN APPROACH TO OPTIMIZE MANUFACTURE OF AN ACTIVE QUADRATURE SIGNAL GENERATOR ...antjjournal
In this paper we introduce an approach to increase density of field-effect transistors framework an active
quadrature signal generator. Framework the approach we consider manufacturing the generator in heterostructure
with specific configuration. Several required areas of the heterostructure should be doped by diffusion
or ion implantation. After that dopant and radiation defects should by annealed framework optimized
scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered
heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures
during manufacturing of integrated circuits with account mismatch-induced stress.
MODELING OF REDISTRIBUTION OF INFUSED DOPANT IN A MULTILAYER STRUCTURE DOPANT...mathsjournal
In this paper we used an analytical approach to model nonlinear diffusion of dopant in a multilayer structure with account nonstationary annealing of the dopant. The approach do without crosslinking solutions at
the interface between layers of the multilayer structure. In this paper we analyzed influence of pressure of
vapor of infusing dopant during doping of multilayer structure on values of optimal parameters of technological process to manufacture p-n-junctions. It has been shown, that doping of multilayer structures by
diffusion and optimization of annealing of dopant gives us possibility to increase sharpness of p-n-junctions
(single p-n-junctions and p-n-junctions within transistors) and to increase homogeneity of dopant distribution in doped area.
OPTIMIZATION OF MANUFACTURE OF FIELDEFFECT HETEROTRANSISTORS WITHOUT P-NJUNCT...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors
in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions,
which include into their system). In this situation one can also obtain increasing of homogeneity
of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-
junction. Optimization of technological process with using inhomogeneity of heterostructure give us
possibility to manufacture the transistors as more compact.
ANALYSIS OF MANUFACTURING OF VOLTAGE RESTORE TO INCREASE DENSITY OF ELEMENTS ...ijoejournal
We introduce an approach for increasing density of voltage restore elements. The approach based on
manufacturing of a heterostructure, which consist of a substrate and an epitaxial layer with special configuration.
Several required sections of the layer should be doped by diffusion or ion implantation. After
that dopants and/or radiation defects should be annealed.
ON APPROACH TO DECREASE DIMENSIONS OF FIELD-EFFECT TRANSISTORS FRAMEWORK ELEM...ijfcstjournal
In this paper we consider manufacturing of elements SRAM with increased density of field-effect transistors
consisting these elements. The approach based on manufacturing of the elements in heterostructure with
specific configuration. We consider doping of several required areas of the heterostructure by diffusion or
by ion implantation. After that dopant and radiation defects have been annealed framework optimized
scheme.
On prognozisys of manufacturing double basemsejjournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account
nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this heterostructure
by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects. The
approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher compactness
of the considered bipolar transistor.
Optimization of technological process to decrease dimensions of circuits xor ...ijfcstjournal
The paper describes an approach of increasing of integration rate of elements of integrated circuits. The
approach has been illustrated by example of manufacturing of a circuit XOR. Framework the approach one
should manufacture a heterostructure with specific configuration. After that several special areas of the
heterostructure should be doped by diffusion and/or ion implantation and optimization of annealing of dopant
and/or radiation defects. We analyzed redistribution of dopant with account redistribution of radiation
defects to formulate recommendations to decrease dimensions of integrated circuits by using analytical
approaches of modeling of technological process.
MODELING OF MANUFACTURING OF A FIELDEFFECT TRANSISTOR TO DETERMINE CONDITIONS...antjjournal
In this paper we introduce an approach to model technological process of manufacture of a field-effect
heterotransistor. The modeling gives us possibility to optimize the technological process to decrease length
of channel by using mechanical stress. As accompanying results of the decreasing one can find decreasing
of thickness of the heterotransistors and increasing of their density, which were comprised in integrated
circuits.
ON OPTIMIZATION OF MANUFACTURING OF AN AMPLIFIER TO INCREASE DENSITY OF BIPOL...ijoejournal
In this paper we consider a possibility to increase density of bipolar heterotransistor framework an amplifier
due to decreasing of their dimensions. The considered approach based on doping of required areas of
heterostructure with specific configuration by diffusion or ion implantation. The doping finished by optimized
annealing of dopant and/or radiation defects. Analysis of redistribution of dopant with account redistribution
of radiation defects (after implantation of ions of dopant) for optimization of the above annealing
have been done by using recently introduced analytical approach. The approach gives a possibility
to analyze mass and heat transports in a heterostructure without crosslinking of solutions on interfaces
between layers of the heterostructure with account nonlinearity of these transports and variation in time of
their parameters.
On prognozisys of manufacturing doublebaseijaceeejournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account
nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this
heterostructure by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects.
The approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher
compactness of the considered bipolar transistor.
AN APPROACH TO OPTIMIZE OF MANUFACTURING OF A VOLTAGE REFERENCE BASED ON HETE...JaresJournal
In this paper we introduce an approach to increase density of field-effect transistors framework a voltage
reference. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also
consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We
introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
ON INCREASING OF DENSITY OF ELEMENTS IN A MULTIVIBRATOR ON BIPOLAR TRANSISTORSijcsitcejournal
In this paper we consider an approach to increase density of elements of a multivibrator on bipolar transistors.
The considered approach based on manufacturing a heterostructure with necessity configuration,
doping by diffusion or ion implantation of required areas to manufacture the required type of conductivity
(p or n) in the areas and optimization of annealing of dopant and/or radiation defects to manufacture more
compact distributions of concentrations of dopants. We also introduce an analytical approach to prognosis
technological process.
Optimization of Technological Process to Decrease Dimensions of Circuits XOR,...ijfcstjournal
The paper describes an approach of increasing of integration rate of elements of integrated circuits. The
approach has been illustrated by example of manufacturing of a circuit XOR. Framework the approach one
should manufacture a heterostructure with specific configuration. After that several special areas of the
heterostructure should be doped by diffusion and/or ion implantation and optimization of annealing of dopant and/or radiation defects. We analyzed redistribution of dopant with account redistribution of radiation
defects to formulate recommendations to decrease dimensions of integrated circuits by using analytical
approaches of modeling of technological process.
On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors. Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
On Approach to Increase Integration Rate of Elements of an Operational Amplif...BRNSS Publication Hub
In this paper, we introduce an approach to optimize manufacturing of an operational amplifier circuit based on field-effect transistors. Main aims of the optimization are (i) decreasing dimensions of elements of the considered operational amplifier and (ii) increasing of performance and reliability of the considered field-effect transistors. Dimensions of considered field-effect transistors will be decreased due to manufacture of these transistors framework heterostructure with specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects. Performance and reliability of the above field-effect transistors could be increased by optimization of annealing of dopant and/or radiation defects and using inhomogeneity of properties of heterostructure. Choosing of inhomogeneity of properties of heterostructure leads to increasing of compactness of distribution of concentration of dopant. At the same time, one can obtain increasing of homogeneity of the above concentration. In this paper, we also introduce an analytical approach for prognosis of technological process of manufacturing of the considered operational amplifier. The approach gives a possibility to take into account variation of parameters of processes in space and at the same time in space. At the same time, one can take into account nonlinearity of the considered processes.
An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal ...ijrap
In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect
heterotransistor. Based on analytical solution of the considered boundary problems some recommendations
have been formulated to optimize technological processes.
MODIFICATION OF DOPANT CONCENTRATION PROFILE IN A FIELD-EFFECT HETEROTRANSIST...msejjournal
In this paper we consider an approach of manufacturing more compact field-effect heterotransistors. The
approach based on manufacturing a heterostructure, which consist of a substrate and an epitaxial layer
with specific configuration. After that several areas of the epitaxial layer have been doped by diffusion or
ion implantation with optimized annealing of dopant and /or radiation defects. At the same time we introduce
an approach of modification of energy band diagram by additional doping of channel of the transistors.
We also consider an analytical approach to model and optimize technological process.
MODIFICATION OF DOPANT CONCENTRATION PROFILE IN A FIELD-EFFECT HETEROTRANSIST...msejjournal
In this paper we consider an approach of manufacturing more compact field-effect heterotransistors. The
approach based on manufacturing a heterostructure, which consist of a substrate and an epitaxial layer
with specific configuration. After that several areas of the epitaxial layer have been doped by diffusion or
ion implantation with optimized annealing of dopant and /or radiation defects. At the same time we introduce an approach of modification of energy band diagram by additional doping of channel of the transistors. We also consider an analytical approach to model and optimize technological process.
On Analytical Approach to Prognosis of Manufacturing of Voltage Divider Biasi...BRNSS Publication Hub
In this paper, we introduce an approach for prognosis of manufacturing of voltage divider biasing common emitter amplifier based on bipolar transistors with account mismatch-induced stress. Based on this prognosis, we formulate some recommendations for optimization of manufacturing of the amplifier. Main aims of the optimization are as follows: (1) Decreasing dimensions of elements of the considered operational amplifier and (2) increasing of performance and reliability of the considered bipolar transistors. Dimensions of considered bipolar transistors will be decreased due to manufacture of these transistors framework heterostructure with specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects. Performance and reliability of the above bipolar transistors could be increased by optimization of annealing of dopant and/or radiation defects and using inhomogeneity of the properties of heterostructure. Choosing of inhomogeneity properties of heterostructure leads to increasing of compactness of distribution of concentration of dopant. At the same time, one can obtain increasing of homogeneity of the above concentration. In this paper, we also introduce an analytical approach for prognosis of technological process of manufacturing of the considered operational amplifier. The approach gives a possibility to take into account variation of parameters of processes in space and at the same time in space. At the same time, one can take into account nonlinearity of the considered processes.
An Approach to Analyze Non-linear Dynamics of Mass Transport during Manufactu...BRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a hybrid comparator with the first dynamic amplifying stage and the second quasi-dynamic latching stage. Framework the approach, we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized
Optimization of Dopant Diffusion and Ion Implantation to Increase Integration...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach based on manufacturing field-effect transistors in heterostructures and optimization of technological processes. At the same time we consider possibility to simplify their constructions.
Similar to ON APPROACH TO DECREASE DIMENSIONS OF FIELD-EFFECT TRANSISTORS FRAMEWORK ELE- MENT OF SRAM WITH INCREASING THEIR DIMENSIONS (20)
ENHANCING ENGLISH WRITING SKILLS THROUGH INTERNET-PLUS TOOLS IN THE PERSPECTI...ijfcstjournal
This investigation delves into incorporating a hybridized memetic strategy within the framework of English
composition pedagogy, leveraging Internet Plus resources. The study aims to provide an in-depth analysis
of how this method influences students’ writing competence, their perceptions of writing, and their
enthusiasm for English acquisition. Employing an explanatory research design that combines qualitative
and quantitative methods, the study collects data through surveys, interviews, and observations of students’
writing performance before and after the intervention. Findings demonstrate a beneficial impact of
integrating the memetic approach alongside Internet Plus tools on the writing aptitude of English as a
Foreign Language (EFL) learners. Students reported increased engagement with writing, attributing it to
the use of Internet plus tools. They also expressed that the memetic approach facilitated a deeper
understanding of cultural and social contexts in writing. Furthermore, the findings highlight a significant
improvement in students’ writing skills following the intervention. This study provides significant insights
into the practical implementation of the memetic approach within English writing education, highlighting
the beneficial contribution of Internet Plus tools in enriching students' learning journeys.
A SURVEY TO REAL-TIME MESSAGE-ROUTING NETWORK SYSTEM WITH KLA MODELLINGijfcstjournal
Messages routing over a network is one of the most fundamental concept in communication which requires
simultaneous transmission of messages from a source to a destination. In terms of Real-Time Routing, it
refers to the addition of a timing constraint in which messages should be received within a specified time
delay. This study involves Scheduling, Algorithm Design and Graph Theory which are essential parts of
the Computer Science (CS) discipline. Our goal is to investigate an innovative and efficient way to present
these concepts in the context of CS Education. In this paper, we will explore the fundamental modelling of
routing real-time messages on networks. We study whether it is possible to have an optimal on-line
algorithm for the Arbitrary Directed Graph network topology. In addition, we will examine the message
routing’s algorithmic complexity by breaking down the complex mathematical proofs into concrete, visual
examples. Next, we explore the Unidirectional Ring topology in finding the transmission’s
“makespan”.Lastly, we propose the same network modelling through the technique of Kinesthetic Learning
Activity (KLA). We will analyse the data collected and present the results in a case study to evaluate the
effectiveness of the KLA approach compared to the traditional teaching method.
A COMPARATIVE ANALYSIS ON SOFTWARE ARCHITECTURE STYLESijfcstjournal
Software architecture is the structural solution that achieves the overall technical and operational
requirements for software developments. Software engineers applied software architectures for their
software system developments; however, they worry the basic benchmarks in order to select software
architecture styles, possible components, integration methods (connectors) and the exact application of
each style.
The objective of this research work was a comparative analysis of software architecture styles by its
weakness and benefits in order to select by the programmer during their design time. Finally, in this study,
the researcher has been identified architectural styles, weakness, and Strength and application areas with
its component, connector and Interface for the selected architectural styles.
SYSTEM ANALYSIS AND DESIGN FOR A BUSINESS DEVELOPMENT MANAGEMENT SYSTEM BASED...ijfcstjournal
A design of a sales system for professional services requires a comprehensive understanding of the
dynamics of sale cycles and how key knowledge for completing sales is managed. This research describes
a design model of a business development (sales) system for professional service firms based on the Saudi
Arabian commercial market, which takes into account the new advances in technology while preserving
unique or cultural practices that are an important part of the Saudi Arabian commercial market. The
design model has combined a number of key technologies, such as cloud computing and mobility, as an
integral part of the proposed system. An adaptive development process has also been used in implementing
the proposed design model.
AN ALGORITHM FOR SOLVING LINEAR OPTIMIZATION PROBLEMS SUBJECTED TO THE INTERS...ijfcstjournal
Frank t-norms are parametric family of continuous Archimedean t-norms whose members are also strict
functions. Very often, this family of t-norms is also called the family of fundamental t-norms because of the
role it plays in several applications. In this paper, optimization of a linear objective function with fuzzy
relational inequality constraints is investigated. The feasible region is formed as the intersection of two
inequality fuzzy systems defined by frank family of t-norms is considered as fuzzy composition. First, the
resolution of the feasible solutions set is studied where the two fuzzy inequality systems are defined with
max-Frank composition. Second, some related basic and theoretical properties are derived. Then, a
necessary and sufficient condition and three other necessary conditions are presented to conceptualize the
feasibility of the problem. Subsequently, it is shown that a lower bound is always attainable for the optimal
objective value. Also, it is proved that the optimal solution of the problem is always resulted from the
unique maximum solution and a minimal solution of the feasible region. Finally, an algorithm is presented
to solve the problem and an example is described to illustrate the algorithm. Additionally, a method is
proposed to generate random feasible max-Frank fuzzy relational inequalities. By this method, we can
easily generate a feasible test problem and employ our algorithm to it.
LBRP: A RESILIENT ENERGY HARVESTING NOISE AWARE ROUTING PROTOCOL FOR UNDER WA...ijfcstjournal
Underwater detector network is one amongst the foremost difficult and fascinating analysis arenas that
open the door of pleasing plenty of researchers during this field of study. In several under water based
sensor applications, nodes are square measured and through this the energy is affected. Thus, the mobility
of each sensor nodes are measured through the water atmosphere from the water flow for sensor based
protocol formations. Researchers have developed many routing protocols. However, those lost their charm
with the time. This can be the demand of the age to supply associate degree upon energy-efficient and
ascendable strong routing protocol for under water actuator networks. During this work, the authors tend
to propose a customary routing protocol named level primarily based routing protocol (LBRP), reaching to
offer strong, ascendable and energy economical routing. LBRP conjointly guarantees the most effective use
of total energy consumption and ensures packet transmission which redirects as an additional reliability in
compare to different routing protocols. In this work, the authors have used the level of forwarding node,
residual energy and distance from the forwarding node to the causing node as a proof in multicasting
technique comparisons. Throughout this work, the authors have got a recognition result concerning about
86.35% on the average in node multicasting performances. Simulation has been experienced each in a
wheezy and quiet atmosphere which represents the endorsement of higher performance for the planned
protocol.
STRUCTURAL DYNAMICS AND EVOLUTION OF CAPSULE ENDOSCOPY (PILL CAMERA) TECHNOLO...ijfcstjournal
This research paper examined and re-evaluates the technological innovation, theory, structural dynamics
and evolution of Pill Camera(Capsule Endoscopy) technology in redirecting the response manner of small
bowel (intestine) examination in human. The Pill Camera (Endoscopy Capsule) is made up of sealed
biocompatible material to withstand acid, enzymes and other antibody chemicals in the stomach is a
technology that helps the medical practitioners especially the general physicians and the
gastroenterologists to examine and re-examine the intestine for possible bleeding or infection. Before the
advent of the Pill camera (Endoscopy Capsule) the colonoscopy was the local method used but research
showed that some parts (bowel) of the intestine can’t be reach by mere traditional method hence the need
for Pill Camera. Countless number of deaths from stomach disease such as polyps, inflammatory bowel
(Crohn”s diseases), Cancers, Ulcer, anaemia and tumours of small intestines which ordinary would have
been detected by sophisticated technology like Pill Camera has become norm in the developing nations.
Nevertheless, not only will this paper examine and re-evaluate the Pill Camera Innovation, theory,
Structural dynamics and evolution it unravelled and aimed to create awareness for both medical
practitioners and the public.
AN OPTIMIZED HYBRID APPROACH FOR PATH FINDINGijfcstjournal
Path finding algorithm addresses problem of finding shortest path from source to destination avoiding
obstacles. There exist various search algorithms namely A*, Dijkstra's and ant colony optimization. Unlike
most path finding algorithms which require destination co-ordinates to compute path, the proposed
algorithm comprises of a new method which finds path using backtracking without requiring destination
co-ordinates. Moreover, in existing path finding algorithm, the number of iterations required to find path is
large. Hence, to overcome this, an algorithm is proposed which reduces number of iterations required to
traverse the path. The proposed algorithm is hybrid of backtracking and a new technique(modified 8-
neighbor approach). The proposed algorithm can become essential part in location based, network, gaming
applications. grid traversal, navigation, gaming applications, mobile robot and Artificial Intelligence.
EAGRO CROP MARKETING FOR FARMING COMMUNITYijfcstjournal
The Major Occupation in India is the Agriculture; the people involved in the Agriculture belong to the poor
class and category. The people of the farming community are unaware of the new techniques and Agromachines, which would direct the world to greater heights in the field of agriculture. Though the farmers
work hard, they are cheated by agents in today’s market. This serves as a opportunity to solve
all the problems that farmers face in the current world. The eAgro crop marketing will serve as a better
way for the farmers to sell their products within the country with some mediocre knowledge about using
the website. This would provide information to the farmers about current market rate of agro-products,
their sale history and profits earned in a sale. This site will also help the farmers to know about the market
information and to view agricultural schemes of the Government provided to farmers.
EDGE-TENACITY IN CYCLES AND COMPLETE GRAPHSijfcstjournal
It is well known that the tenacity is a proper measure for studying vulnerability and reliability in graphs.
Here, a modified edge-tenacity of a graph is introduced based on the classical definition of tenacity.
Properties and bounds for this measure are introduced; meanwhile edge-tenacity is calculated for cycle
graphs and also for complete graphs.
COMPARATIVE STUDY OF DIFFERENT ALGORITHMS TO SOLVE N QUEENS PROBLEMijfcstjournal
This Paper provides a brief description of the Genetic Algorithm (GA), the Simulated Annealing (SA)
Algorithm, the Backtracking (BT) Algorithm and the Brute Force (BF) Search Algorithm and attempts to
explain the way as how the Proposed Genetic Algorithm (GA), the Proposed Simulated Annealing (SA)
Algorithm using GA, the Backtracking (BT) Algorithm and the Brute Force (BF) Search Algorithm can be
employed in finding the best solution of N Queens Problem and also, makes a comparison between these
four algorithms. It is entirely a review based work. The four algorithms were written as well as
implemented. From the Results, it was found that, the Proposed Genetic Algorithm (GA) performed better
than the Proposed Simulated Annealing (SA) Algorithm using GA, the Backtracking (BT) Algorithm and
the Brute Force (BF) Search Algorithm and it also provided better fitness value (solution) than the
Proposed Simulated Annealing Algorithm (SA) using GA, the Backtracking (BT) Algorithm and the Brute
Force (BF) Search Algorithm, for different N values. Also, it was noticed that, the Proposed GA took more
time to provide result than the Proposed SA using GA.
PSTECEQL: A NOVEL EVENT QUERY LANGUAGE FOR VANET’S UNCERTAIN EVENT STREAMSijfcstjournal
In recent years, the complex event processing technology has been used to process the VANET’s temporal
and spatial event streams. However, we usually cannot get the accurate data because the device sensing
accuracy limitations of the system. We only can get the uncertain data from the complex and limited
environment of the VANET. Because the VANET’s event streams are consist of the uncertain data, so they
are also uncertain. How effective to express and process these uncertain event streams has become the core
issue for the VANET system. To solve this problem, we propose a novel complex event query language
PSTeCEQL (probabilistic spatio-temporal constraint event query language). Firstly, we give the definition
of the possible world model of VANET’s uncertain event streams. Secondly, we propose an event query
language PSTeCEQL and give the syntax and the operational semantics of the language. Finally, we
illustrate the validity of the PSTeCEQL by an example.
CLUSTBIGFIM-FREQUENT ITEMSET MINING OF BIG DATA USING PRE-PROCESSING BASED ON...ijfcstjournal
Now a day enormous amount of data is getting explored through Internet of Things (IoT) as technologies
are advancing and people uses these technologies in day to day activities, this data is termed as Big Data
having its characteristics and challenges. Frequent Itemset Mining algorithms are aimed to disclose
frequent itemsets from transactional database but as the dataset size increases, it cannot be handled by
traditional frequent itemset mining. MapReduce programming model solves the problem of large datasets
but it has large communication cost which reduces execution efficiency. This proposed new pre-processed
k-means technique applied on BigFIM algorithm. ClustBigFIM uses hybrid approach, clustering using kmeans algorithm to generate Clusters from huge datasets and Apriori and Eclat to mine frequent itemsets
from generated clusters using MapReduce programming model. Results shown that execution efficiency of
ClustBigFIM algorithm is increased by applying k-means clustering algorithm before BigFIM algorithm as
one of the pre-processing technique.
A MUTATION TESTING ANALYSIS AND REGRESSION TESTINGijfcstjournal
Software testing is a testing which conducted a test to provide information to client about the quality of the
product under test. Software testing can also provide an objective, independent view of the software to
allow the business to appreciate and understand the risks of software implementation. In this paper we
focused on two main software testing –mutation testing and mutation testing. Mutation testing is a
procedural testing method, i.e. we use the structure of the code to guide the test program, A mutation is a
little change in a program. Such changes are applied to model low level defects that obtain in the process
of coding systems. Ideally mutations should model low-level defect creation. Mutation testing is a process
of testing in which code is modified then mutated code is tested against test suites. The mutations used in
source code are planned to include in common programming errors. A good unit test typically detects the
program mutations and fails automatically. Mutation testing is used on many different platforms, including
Java, C++, C# and Ruby. Regression testing is a type of software testing that seeks to uncover
new software bugs, or regressions, in existing functional and non-functional areas of a system after
changes such as enhancements, patches or configuration changes, have been made to them. When defects
are found during testing, the defect got fixed and that part of the software started working as needed. But
there may be a case that the defects that fixed have introduced or uncovered a different defect in the
software. The way to detect these unexpected bugs and to fix them used regression testing. The main focus
of regression testing is to verify that changes in the software or program have not made any adverse side
effects and that the software still meets its need. Regression tests are done when there are any changes
made on software, because of modified functions.
GREEN WSN- OPTIMIZATION OF ENERGY USE THROUGH REDUCTION IN COMMUNICATION WORK...ijfcstjournal
Advances in micro fabrication and communication techniques have led to unimaginable proliferation of
WSN applications. Research is focussed on reduction of setup operational energy costs. Bulk of operational
energy costs are linked to communication activities of WSN. Any progress towards energy efficiency has a
potential of huge savings globally. Therefore, every energy efficient step is an endeavour to cut costs and
‘Go Green’. In this paper, we have proposed a framework to reduce communication workload through: Innetwork compression and multiple query synthesis at the base-station and modification of query syntax
through introduction of Static Variables. These approaches are general approaches which can be used in
any WSN irrespective of application.
A NEW MODEL FOR SOFTWARE COSTESTIMATION USING HARMONY SEARCHijfcstjournal
Accurate and realistic estimation is always considered to be a great challenge in software industry.
Software Cost Estimation (SCE) is the standard application used to manage software projects. Determining
the amount of estimation in the initial stages of the project depends on planning other activities of the
project. In fact, the estimation is confronted with a number of uncertainties and barriers’, yet assessing the
previous projects is essential to solve this problem. Several models have been developed for the analysis of
software projects. But the classical reference method is the COCOMO model, there are other methods
which are also applied such as Function Point (FP), Line of Code(LOC); meanwhile, the expert`s opinions
matter in this regard. In recent years, the growth and the combination of meta-heuristic algorithms with
high accuracy have brought about a great achievement in software engineering. Meta-heuristic algorithms
which can analyze data from multiple dimensions and identify the optimum solution between them are
analytical tools for the analysis of data. In this paper, we have used the Harmony Search (HS)algorithm for
SCE. The proposed model which is a collection of 60 standard projects from Dataset NASA60 has been
assessed.The experimental results show that HS algorithm is a good way for determining the weight
similarity measures factors of software effort, and reducing the error of MRE.
AGENT ENABLED MINING OF DISTRIBUTED PROTEIN DATA BANKSijfcstjournal
Mining biological data is an emergent area at the intersection between bioinformatics and data mining
(DM). The intelligent agent based model is a popular approach in constructing Distributed Data Mining
(DDM) systems to address scalable mining over large scale distributed data. The nature of associations
between different amino acids in proteins has also been a subject of great anxiety. There is a strong need to
develop new models and exploit and analyze the available distributed biological data sources. In this study,
we have designed and implemented a multi-agent system (MAS) called Agent enriched Quantitative
Association Rules Mining for Amino Acids in distributed Protein Data Banks (AeQARM-AAPDB). Such
globally strong association rules enhance understanding of protein composition and are desirable for
synthesis of artificial proteins. A real protein data bank is used to validate the system.
International Journal on Foundations of Computer Science & Technology (IJFCST)ijfcstjournal
International Journal on Foundations of Computer Science & Technology (IJFCST) is a Bi-monthly peer-reviewed and refereed open access journal that publishes articles which contribute new results in all areas of the Foundations of Computer Science & Technology. Over the last decade, there has been an explosion in the field of computer science to solve various problems from mathematics to engineering. This journal aims to provide a platform for exchanging ideas in new emerging trends that needs more focus and exposure and will attempt to publish proposals that strengthen our goals. Topics of interest include, but are not limited to the following:
Because the technology is used largely in the last decades; cybercrimes have become a significant
international issue as a result of the huge damage that it causes to the business and even to the ordinary
users of technology. The main aims of this paper is to shed light on digital crimes and gives overview about
what a person who is related to computer science has to know about this new type of crimes. The paper has
three sections: Introduction to Digital Crime which gives fundamental information about digital crimes,
Digital Crime Investigation which presents different investigation models and the third section is about
Cybercrime Law.
DISTRIBUTION OF MAXIMAL CLIQUE SIZE UNDER THE WATTS-STROGATZ MODEL OF EVOLUTI...ijfcstjournal
In this paper, we analyze the evolution of a small-world network and its subsequent transformation to a
random network using the idea of link rewiring under the well-known Watts-Strogatz model for complex
networks. Every link u-v in the regular network is considered for rewiring with a certain probability and if
chosen for rewiring, the link u-v is removed from the network and the node u is connected to a randomly
chosen node w (other than nodes u and v). Our objective in this paper is to analyze the distribution of the
maximal clique size per node by varying the probability of link rewiring and the degree per node (number
of links incident on a node) in the initial regular network. For a given probability of rewiring and initial
number of links per node, we observe the distribution of the maximal clique per node to follow a Poisson
distribution. We also observe the maximal clique size per node in the small-world network to be very close
to that of the average value and close to that of the maximal clique size in a regular network. There is no
appreciable decrease in the maximal clique size per node when the network transforms from a regular
network to a small-world network. On the other hand, when the network transforms from a small-world
network to a random network, the average maximal clique size value decreases significantly
Hierarchical Digital Twin of a Naval Power SystemKerry Sado
A hierarchical digital twin of a Naval DC power system has been developed and experimentally verified. Similar to other state-of-the-art digital twins, this technology creates a digital replica of the physical system executed in real-time or faster, which can modify hardware controls. However, its advantage stems from distributing computational efforts by utilizing a hierarchical structure composed of lower-level digital twin blocks and a higher-level system digital twin. Each digital twin block is associated with a physical subsystem of the hardware and communicates with a singular system digital twin, which creates a system-level response. By extracting information from each level of the hierarchy, power system controls of the hardware were reconfigured autonomously. This hierarchical digital twin development offers several advantages over other digital twins, particularly in the field of naval power systems. The hierarchical structure allows for greater computational efficiency and scalability while the ability to autonomously reconfigure hardware controls offers increased flexibility and responsiveness. The hierarchical decomposition and models utilized were well aligned with the physical twin, as indicated by the maximum deviations between the developed digital twin hierarchy and the hardware.
Water scarcity is the lack of fresh water resources to meet the standard water demand. There are two type of water scarcity. One is physical. The other is economic water scarcity.
Cosmetic shop management system project report.pdfKamal Acharya
Buying new cosmetic products is difficult. It can even be scary for those who have sensitive skin and are prone to skin trouble. The information needed to alleviate this problem is on the back of each product, but it's thought to interpret those ingredient lists unless you have a background in chemistry.
Instead of buying and hoping for the best, we can use data science to help us predict which products may be good fits for us. It includes various function programs to do the above mentioned tasks.
Data file handling has been effectively used in the program.
The automated cosmetic shop management system should deal with the automation of general workflow and administration process of the shop. The main processes of the system focus on customer's request where the system is able to search the most appropriate products and deliver it to the customers. It should help the employees to quickly identify the list of cosmetic product that have reached the minimum quantity and also keep a track of expired date for each cosmetic product. It should help the employees to find the rack number in which the product is placed.It is also Faster and more efficient way.
Welcome to WIPAC Monthly the magazine brought to you by the LinkedIn Group Water Industry Process Automation & Control.
In this month's edition, along with this month's industry news to celebrate the 13 years since the group was created we have articles including
A case study of the used of Advanced Process Control at the Wastewater Treatment works at Lleida in Spain
A look back on an article on smart wastewater networks in order to see how the industry has measured up in the interim around the adoption of Digital Transformation in the Water Industry.
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
Student information management system project report ii.pdfKamal Acharya
Our project explains about the student management. This project mainly explains the various actions related to student details. This project shows some ease in adding, editing and deleting the student details. It also provides a less time consuming process for viewing, adding, editing and deleting the marks of the students.
ON APPROACH TO DECREASE DIMENSIONS OF FIELD-EFFECT TRANSISTORS FRAMEWORK ELE- MENT OF SRAM WITH INCREASING THEIR DIMENSIONS
1. International Journal in Foundations of Computer Science & Technology (IJFCST) Vol.6, No.4, July 2016
DOI:10.5121/ijfcst.2016.6402 19
ON APPROACH TO DECREASE DIMENSIONS OF
FIELD-EFFECT TRANSISTORS FRAMEWORK ELE-
MENT OF SRAM WITH INCREASING THEIR
DIMENSIONS
E.L. Pankratov, E.A. Bulaeva
Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950,
Russia
ABSTRACT
In this paper we consider manufacturing of elements SRAM with increased density of field-effect transistors
consisting these elements. The approach based on manufacturing of the elements in heterostructure with
specific configuration. We consider doping of several required areas of the heterostructure by diffusion or
by ion implantation. After that dopant and radiation defects have been annealed framework optimized
scheme.
KEYWORDS
Field-effect transistor, decreasing of dimension of transistors, element SRAM, increasing if density of ele-
ments of SRAM
1. INTRODUCTION
In the present time several actual problems of the solid state electronics (such as increasing of
performance, reliability and density of elements of integrated circuits) are intensively solving. At
the same time with increasing of density of elements of integrated circuits their dimensions
should be decreased. Dimensions of these elements could be decreased by manufacturing in thin
films heterostructures [1-4]. In this case it could be used inhomogeneity (layering) of heterostruc-
tures. To decrease dimensions of elements of integrated circuits are could be also used laser or
microwave types of annealing [5-7]. These types of annealing give a possibility to obtain inho-
mogenous distribution of temperature in the considered samples or heterostructures during doping
due to temperature. In this situation one can obtain decreasing dimensions of elements of inte-
grated circuits. It should be noted, that radiation processing of doped materials also leads to
changing their properties [8,9].
In this paper we consider manufacturing element SRAM [10]. To manufacture the element we
consider a heterostructure, which includes into itself a substrate and an epitaxial layer. Several
sections are presented in the epitaxial layer. These sections were manufactured by using another
materials. These sections have been doped. The doping has been done to produce required types
of conductivity (p or n) in the considered sections. These sections have been doped by diffusion
or by ion implantation. These areas became sources, drains and gates of transistors framework
element SRAM (see Fig. 1). We consider annealing of dopant and/or radiation defects after the
doping. Main aim of the present paper is analysis of changing of concentrations of dopants and
radiation defects in space and time to determine conditions, which correspond to decreasing of
dimensions of transistors framework element SRAM and at the same time to increase of these
transistors.
2. International Journal in Foundations of Computer Science & Technology (IJFCST) Vol.6, No.4, July 2016
20
2. METHOD OF SOLUTION
We determine distribution of concentration of dopant in space and time as the solution of the fol-
lowing equation
( ) ( ) ( ) ( )
∂
∂
∂
∂
+
∂
∂
∂
∂
+
∂
∂
∂
∂
=
∂
∂
z
t
z
y
x
C
D
z
y
t
z
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C
D
y
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t
z
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x
t
t
z
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C ,
,
,
,
,
,
,
,
,
,
,
,
, (1)
which correspond to the following boundary and initial conditions
( ) 0
,
,
,
0
=
∂
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=
x
x
t
z
y
x
C
,
( ) 0
,
,
,
=
∂
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= x
L
x
x
t
z
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,
( ) 0
,
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,
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=
∂
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=
y
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( ) 0
,
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=
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= y
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Fig. 1. Structure of element of SRAM. View from top
( ) 0
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=
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,
( ) 0
,
,
,
=
∂
∂
= z
L
x
z
t
z
y
x
C
, C(x,y,z,0)=fC(x,y,z). (2)
The function C(x,y,z,t) describes distribution of concentration of dopant in space and time; T is
the temperature of annealing; DС is the dopant diffusion coefficient. Diffusion coefficient will be
changed with changing of materials of heterostructure. Diffusion coefficient will be also changed
with changing of temperature of annealing (with account Arrhenius law). Concentrational de-
pendences of dopant diffusion coefficient could be approximated by the following relation [10-
12]
( ) ( )
( )
( ) ( )
( )
+
+
+
= 2
*
2
2
*
1
,
,
,
,
,
,
1
,
,
,
,
,
,
1
,
,
,
V
t
z
y
x
V
V
t
z
y
x
V
T
z
y
x
P
t
z
y
x
C
T
z
y
x
D
D L
C ς
ς
ξ γ
γ
. (3)
The function DL(x,y,z,T) describes dependences of dopant diffusion coefficient on coordinate
(heterostructure includes into itself several layers) and temperature. The function P(x,y,z,T) de-
3. International Journal in Foundations of Computer Science & Technology (IJFCST) Vol.6, No.4, July 2016
21
scribes dependences of limit of solubility of dopant on coordinate (heterostructure includes into
itself several layers) and temperature. Parameter γ ∈[1,3] will be changed with changing of mate-
rials of heterostructure [10]. The function V(x,y,z,t) describes distribution of concentration of ra-
diation vacancies in space and time with the equilibrium distribution V*
. Dependence of dopant
diffusion coefficient on concentration of the dopant has been described in details in Ref. [10].
Doping of materials by diffusion did not leads to generation radiation defects. In this situation
ζ1=ζ2=0. We determine the spatio-temporal distributions of concentrations of radiation defects by
solving the following system of equations [11,12]
( ) ( ) ( ) ( ) ( ) ( ) ×
−
∂
∂
∂
∂
+
∂
∂
∂
∂
=
∂
∂
T
z
y
x
k
y
t
z
y
x
I
T
z
y
x
D
y
x
t
z
y
x
I
T
z
y
x
D
x
t
t
z
y
x
I
I
I
I
I ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
( ) ( ) ( ) ( ) ( ) ( )
t
z
y
x
V
t
z
y
x
I
T
z
y
x
k
z
t
z
y
x
I
T
z
y
x
D
z
t
z
y
x
I V
I
I ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
, ,
2
−
∂
∂
∂
∂
+
× (4)
( )
( )
( )
( )
( )
( ) ×
−
∂
∂
∂
∂
+
∂
∂
∂
∂
=
∂
∂
T
z
y
x
k
y
t
z
y
x
V
T
z
y
x
D
y
x
t
z
y
x
V
T
z
y
x
D
x
t
t
z
y
x
V
V
V
V
V ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
( ) ( ) ( ) ( ) ( ) ( )
t
z
y
x
V
t
z
y
x
I
T
z
y
x
k
z
t
z
y
x
V
T
z
y
x
D
z
t
z
y
x
V V
I
V ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
, ,
2
−
∂
∂
∂
∂
+
×
with boundary and initial conditions
( ) 0
,
,
,
0
=
∂
∂
=
x
x
t
z
y
x
ρ
,
( ) 0
,
,
,
=
∂
∂
= x
L
x
x
t
z
y
x
ρ
,
( ) 0
,
,
,
0
=
∂
∂
=
y
y
t
z
y
x
ρ
,
( ) 0
,
,
,
=
∂
∂
= y
L
y
y
t
z
y
x
ρ
,
( ) 0
,
,
,
0
=
∂
∂
=
z
z
t
z
y
x
ρ
,
( ) 0
,
,
,
=
∂
∂
= z
L
z
z
t
z
y
x
ρ
, ρ(x,y,z,0)=fρ (x,y,z). (5)
Here ρ=I,V. The function I(x,y,z,t) describes distribution of concentration of radiation interstitials
in space and time. The functions Dρ(x,y,z,T) describes dependences of diffusion coefficients of
point radiation defects on coordinate and temperature. Terms V2
(x,y,z,t) and I2
(x,y,z,t) describe
generation of simplest complexes of radiation defects (divacancies and diinterstitials). The func-
tion kI,V(x,y,z,T) describes dependences of parameter of recombination on coordinate and tempera-
ture. The functions kI,I(x,y,z,T) and kV,V(x,y,z,T) describ dependences of the parameters of genera-
tion of divacancies and diinterstitials on coordinate and temperature.
We calculate distributions of concentrations of divacancies ΦV (x,y,z,t) and dinterstitials ΦI (x,y,z,
t) in space and time as solution of the following system of equations [11,12]
( ) ( ) ( ) ( ) ( ) +
Φ
+
Φ
=
Φ
Φ
Φ
y
t
z
y
x
T
z
y
x
D
y
x
t
z
y
x
T
z
y
x
D
x
t
t
z
y
x I
I
I
I
I
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
( ) ( ) ( ) ( ) ( ) ( )
t
z
y
x
I
T
z
y
x
k
t
z
y
x
I
T
z
y
x
k
z
t
z
y
x
T
z
y
x
D
z
I
I
I
I
I ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
, 2
, −
+
Φ
+ Φ
∂
∂
∂
∂
(6)
( ) ( ) ( ) ( ) ( ) +
Φ
+
Φ
=
Φ
Φ
Φ
y
t
z
y
x
T
z
y
x
D
y
x
t
z
y
x
T
z
y
x
D
x
t
t
z
y
x V
V
V
V
V
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
4. International Journal in Foundations of Computer Science & Technology (IJFCST) Vol.6, No.4, July 2016
22
( ) ( ) ( ) ( ) ( ) ( )
t
z
y
x
V
T
z
y
x
k
t
z
y
x
V
T
z
y
x
k
z
t
z
y
x
T
z
y
x
D
z
V
V
V
V
V ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
, 2
, −
+
Φ
+ Φ
∂
∂
∂
∂
with the following boundary and initial conditions
( )
0
,
,
,
0
=
∂
Φ
∂
=
x
x
t
z
y
x
ρ
,
( )
0
,
,
,
=
∂
Φ
∂
= x
L
x
x
t
z
y
x
ρ
,
( )
0
,
,
,
0
=
∂
Φ
∂
=
y
y
t
z
y
x
ρ
,
( )
0
,
,
,
=
∂
Φ
∂
= y
L
y
y
t
z
y
x
ρ
,
( )
0
,
,
,
0
=
∂
Φ
∂
=
z
z
t
z
y
x
ρ
,
( )
0
,
,
,
=
∂
Φ
∂
= z
L
z
z
t
z
y
x
ρ
, ΦI(x,y,z,0)=fΦI (x,y,z), ΦV(x,y,z,0)=fΦV (x,y,z). (7)
The functions DΦρ(x,y,z,T) describe dependences of diffusion coefficients of the above complexes
on coordinate and temperature. The functions kI(x,y,z,T) and kV (x,y,z,T) describe dependences of
parameters of decay of these complexes on coordinate and temperature.
We calculate distributions of concentrations of dopant and radiation defects in space and time by
using method of averaging of function corrections [13]. We consider the method with decreased
quantity of iteration steps [14]. To decrease quantity of iteration steps we used solutions of linear
Eqs. (1), (4) and (6) with averaged values of diffusion coefficients D0L, D0I, D0V, D0ΦI, D0ΦV as
initial-order approximations of the required concentrations. The solutions could be written as
( ) ( ) ( ) ( ) ( )
∑
+
=
∞
=1
0
1
2
,
,
,
n
nC
n
n
n
nC
z
y
x
z
y
x
C
t
e
z
c
y
c
x
c
F
L
L
L
L
L
L
F
t
z
y
x
C ,
( ) ( ) ( ) ( ) ( )
∑
+
=
∞
=1
0
1
2
,
,
,
n
nI
n
n
n
nI
z
y
x
z
y
x
I
t
e
z
c
y
c
x
c
F
L
L
L
L
L
L
F
t
z
y
x
I ,
( ) ( ) ( ) ( ) ( )
∑
+
=
∞
=1
0
1
2
,
,
,
n
nV
n
n
n
nC
z
y
x
z
y
x
C
t
e
z
c
y
c
x
c
F
L
L
L
L
L
L
F
t
z
y
x
V ,
( ) ( ) ( ) ( ) ( )
∑
+
=
Φ
∞
=
Φ
Φ
Φ
1
0
1
2
,
,
,
n
n
n
n
n
n
z
y
x
z
y
x
I t
e
z
c
y
c
x
c
F
L
L
L
L
L
L
F
t
z
y
x I
I
I
,
( ) ( ) ( ) ( ) ( )
∑
+
=
Φ
∞
=
Φ
Φ
Φ
1
0
1
2
,
,
,
n
n
n
n
n
n
z
y
x
z
y
x
V t
e
z
c
y
c
x
c
F
L
L
L
L
L
L
F
t
z
y
x V
V
V
.
Here ( )
+
+
−
= 2
2
2
0
2
2 1
1
1
exp
z
y
x
n
L
L
L
t
D
n
t
e ρ
ρ π , ( ) ( ) ( ) ( )
∫ ∫ ∫
=
x y z
L L L
n
n
n
n u
d
v
d
w
d
w
v
u
f
v
c
v
c
u
c
F
0 0 0
,
,
ρ
ρ , cn(χ)=cos(π
nχ/Lχ).
The approximations of concentrations of dopant and radiation defects with the second and higher
orders have been calculated framework standard iterative procedure [13,14]. To use the procedure
for calculation the n-order approximations one shall replace the functions C(x,y,z,t), I(x, y,z,t),
V(x,y,z,t), ΦI(x,y,z,t), ΦV(x,y,z,t) in the right sides of the Eqs. (1), (4) and (6) on the following
sums αnρ+ρn-1(x,y,z,t). The replacement leads to the following result
( ) ( ) ( )
( )
( )
[ ]
( )
×
+
+
+
+
= ∗
∗
T
z
y
x
P
t
z
y
x
C
V
t
z
y
x
V
V
t
z
y
x
V
x
t
t
z
y
x
C C
,
,
,
,
,
,
1
,
,
,
,
,
,
1
,
,
, 1
2
2
2
2
1
2
γ
γ
α
ξ
ς
ς
∂
∂
∂
∂
( ) ( ) ( ) ( ) ( )
( )
×
+
+
+
× ∗
∗ 2
2
2
1
1 ,
,
,
,
,
,
1
,
,
,
,
,
,
,
,
,
V
t
z
y
x
V
V
t
z
y
x
V
T
z
y
x
D
y
x
t
z
y
x
C
T
z
y
x
D L
L ς
ς
∂
∂
∂
∂
5. International Journal in Foundations of Computer Science & Technology (IJFCST) Vol.6, No.4, July 2016
23
( )
[ ]
( )
( ) ( ) ( )
×
+
+
+
×
z
t
z
y
x
C
T
z
y
x
D
z
y
t
z
y
x
C
T
z
y
x
P
t
z
y
x
C
L
C
∂
∂
∂
∂
∂
∂
α
ξ γ
γ
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
1 1
1
1
2
( ) ( )
( )
( )
[ ]
( )
+
+
+
+
× ∗
∗
T
z
y
x
P
t
z
y
x
C
V
t
z
y
x
V
V
t
z
y
x
V C
,
,
,
,
,
,
1
,
,
,
,
,
,
1 1
2
2
2
2
1 γ
γ
α
ξ
ς
ς (8)
( ) ( ) ( ) ( ) ( ) +
+
=
y
t
z
y
x
I
T
z
y
x
D
y
x
t
z
y
x
I
T
z
y
x
D
x
t
t
z
y
x
I
I
I
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,
,
,
,
,
,
,
,
,
,
,
,
,
,
, 1
1
2
( ) ( ) ( ) ( )
[ ] ( )
[ ]−
+
+
−
+ t
z
y
x
V
t
z
y
x
I
T
z
y
x
k
z
t
z
y
x
I
T
z
y
x
D
z
V
I
V
I
I ,
,
,
,
,
,
,
,
,
,
,
,
,
,
, 1
2
1
2
,
1
α
α
∂
∂
∂
∂
( ) ( )
[ ]2
1
2
, ,
,
,
,
,
, t
z
y
x
I
T
z
y
x
k I
I
I +
− α (9)
( ) ( ) ( ) ( ) ( ) +
+
=
y
t
z
y
x
V
T
z
y
x
D
y
x
t
z
y
x
V
T
z
y
x
D
x
t
t
z
y
x
V
V
V
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,
,
,
,
,
,
,
,
,
,
,
,
,
,
, 1
1
2
( ) ( ) ( ) ( )
[ ] ( )
[ ]−
+
+
−
+ t
z
y
x
V
t
z
y
x
I
T
z
y
x
k
z
t
z
y
x
V
T
z
y
x
D
z
V
I
V
I
V ,
,
,
,
,
,
,
,
,
,
,
,
,
,
, 1
2
1
2
,
1
α
α
∂
∂
∂
∂
( ) ( )
[ ]2
1
2
, ,
,
,
,
,
, t
z
y
x
V
T
z
y
x
k V
V
V +
− α
( ) ( ) ( ) ( ) ( ) +
Φ
+
Φ
=
Φ
Φ
Φ
y
t
z
y
x
T
z
y
x
D
y
x
t
z
y
x
T
z
y
x
D
x
t
t
z
y
x I
I
I
I
I
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,
,
,
,
,
,
,
,
,
,
,
,
,
,
, 1
1
2
( ) ( ) ( ) ( ) ( ) ( )
t
z
y
x
I
T
z
y
x
k
t
z
y
x
I
T
z
y
x
k
z
t
z
y
x
T
z
y
x
D
z
I
I
I
I
I
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
, 2
,
1
−
+
Φ
+ Φ
∂
∂
∂
∂
(10)
( ) ( ) ( ) ( ) ( ) +
Φ
+
Φ
=
Φ
Φ
Φ
y
t
z
y
x
T
z
y
x
D
y
x
t
z
y
x
T
z
y
x
D
x
t
t
z
y
x V
V
V
V
V
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,
,
,
,
,
,
,
,
,
,
,
,
,
,
, 1
1
2
( ) ( ) ( ) ( ) ( ) ( )
t
z
y
x
V
T
z
y
x
k
t
z
y
x
V
T
z
y
x
k
z
t
z
y
x
T
z
y
x
D
z
V
V
V
V
V
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
, 2
,
1
−
+
Φ
+ Φ
∂
∂
∂
∂
.
Now we integrate left and right sides of Eqs.(8)-(10). The integration leads to the following re-
sults
( ) ( ) ( )
( )
( )
[ ]
( )
∫ ×
+
+
+
+
= ∗
∗
t
C
T
z
y
x
P
z
y
x
C
V
z
y
x
V
V
z
y
x
V
x
t
z
y
x
C
0
1
2
2
2
2
1
2
,
,
,
,
,
,
1
,
,
,
,
,
,
1
,
,
, γ
γ
τ
α
ξ
τ
ς
τ
ς
∂
∂
( ) ( ) ( ) ( ) ( )
( )
∫ ×
+
+
+
× ∗
∗
t
L
L
V
z
y
x
V
V
z
y
x
V
T
z
y
x
D
y
d
x
z
y
x
C
T
z
y
x
D
0
2
2
2
1
1 ,
,
,
,
,
,
1
,
,
,
,
,
,
,
,
,
τ
ς
τ
ς
∂
∂
τ
∂
τ
∂
( )
[ ]
( )
( ) ( ) ( )
∫ ×
+
+
+
×
t
L
C
z
z
y
x
C
T
z
y
x
D
z
d
y
z
y
x
C
T
z
y
x
P
z
y
x
C
0
1
1
1
2 ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
1
∂
τ
∂
∂
∂
τ
∂
τ
∂
τ
α
ξ γ
γ
( ) ( )
( )
( )
[ ]
( )
( )
z
y
x
f
d
T
z
y
x
P
z
y
x
C
V
z
y
x
V
V
z
y
x
V
C
C
,
,
,
,
,
,
,
,
1
,
,
,
,
,
,
1 1
2
2
2
2
1 +
+
+
+
+
× ∗
∗
τ
τ
α
ξ
τ
ς
τ
ς γ
γ
(8a)
6. International Journal in Foundations of Computer Science & Technology (IJFCST) Vol.6, No.4, July 2016
24
( ) ( ) ( ) ( ) ( ) +
∫
+
∫
=
t
I
t
I d
y
z
y
x
I
T
z
y
x
D
y
d
x
z
y
x
I
T
z
y
x
D
x
t
z
y
x
I
0
1
0
1
2
,
,
,
,
,
,
,
,
,
,
,
,
,
,
, τ
∂
τ
∂
∂
∂
τ
∂
τ
∂
∂
∂
( ) ( ) ( ) ( )
[ ] ( )−
+
∫ +
−
∫
+ z
y
x
f
d
z
y
x
I
T
z
y
x
k
d
z
z
y
x
I
T
z
y
x
D
z
I
t
I
I
I
t
I ,
,
,
,
,
,
,
,
,
,
,
,
,
,
0
2
1
2
,
0
1
τ
τ
α
τ
∂
τ
∂
∂
∂
( ) ( )
[ ] ( )
[ ]
∫ +
+
−
t
V
I
V
I d
z
y
x
V
z
y
x
I
T
z
y
x
k
0
1
2
1
2
, ,
,
,
,
,
,
,
,
, τ
τ
α
τ
α (9a)
( ) ( ) ( ) ( ) ( ) +
∫
+
∫
=
t
V
t
V d
y
z
y
x
V
T
z
y
x
D
y
d
x
z
y
x
V
T
z
y
x
D
x
t
z
y
x
V
0
1
0
1
2
,
,
,
,
,
,
,
,
,
,
,
,
,
,
, τ
∂
τ
∂
∂
∂
τ
∂
τ
∂
∂
∂
( ) ( ) ( ) ( ) ( )
[ ] +
∫ +
−
∫
+
×
t
I
V
V
t
V d
z
y
x
V
T
z
y
x
k
d
z
z
y
x
V
T
z
y
x
D
z
d
y
z
y
x
V
0
2
1
2
,
0
1
1
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
τ
τ
α
τ
∂
τ
∂
∂
∂
τ
∂
τ
∂
( ) ( ) ( )
[ ] ( )
[ ]
∫ +
+
−
+
t
V
I
V
I
V d
z
y
x
V
z
y
x
I
T
z
y
x
k
z
y
x
f
0
1
2
1
2
, ,
,
,
,
,
,
,
,
,
,
, τ
τ
α
τ
α
( ) ( ) ( ) ( ) ( ) +
∫
Φ
+
∫
Φ
=
Φ Φ
Φ
t
I
t
I
I d
y
z
y
x
T
z
y
x
D
y
d
x
z
y
x
T
z
y
x
D
x
t
z
y
x I
I
0
1
0
1
2
,
,
,
,
,
,
,
,
,
,
,
,
,
,
, τ
∂
τ
∂
∂
∂
τ
∂
τ
∂
∂
∂
( ) ( ) ( ) ( ) ( )−
+
∫
+
∫
Φ
+ Φ
Φ z
y
x
f
d
z
y
x
I
T
z
y
x
k
d
z
z
y
x
T
z
y
x
D
z I
I
t
I
I
t
I
,
,
,
,
,
,
,
,
,
,
,
,
,
,
0
2
,
0
1
τ
τ
τ
∂
τ
∂
∂
∂
( ) ( )
∫
−
t
V d
z
y
x
V
T
z
y
x
k
0
,
,
,
,
,
, τ
τ (10a)
( ) ( ) ( ) ( ) ( ) +
∫
Φ
+
∫
Φ
=
Φ Φ
Φ
t
V
t
V
V d
y
z
y
x
T
z
y
x
D
y
d
x
z
y
x
T
z
y
x
D
x
t
z
y
x V
V
0
1
0
1
2
,
,
,
,
,
,
,
,
,
,
,
,
,
,
, τ
∂
τ
∂
∂
∂
τ
∂
τ
∂
∂
∂
( ) ( ) ( ) ( ) ( )−
+
∫
+
∫
Φ
+ Φ
Φ z
y
x
f
d
z
y
x
V
T
z
y
x
k
d
z
z
y
x
T
z
y
x
D
z V
V
t
V
V
t
V
,
,
,
,
,
,
,
,
,
,
,
,
,
,
0
2
,
0
1
τ
τ
τ
∂
τ
∂
∂
∂
( ) ( )
∫
−
t
V d
z
y
x
V
T
z
y
x
k
0
,
,
,
,
,
, τ
τ .
We calculate average values of the second-orders approximations of the above concentrations by
using the following relations [13,14]
( ) ( )
[ ]
∫ ∫ ∫ ∫ −
Θ
=
Θ
0 0 0 0
1
2
2 ,
,
,
,
,
,
1 x y z
L L L
z
y
x
t
d
x
d
y
d
z
d
t
z
y
x
t
z
y
x
L
L
L
ρ
ρ
α ρ . (11)
Relations for the required average values α 2ρ have been calculated through substitution of rela-
tions (8a)-(10a) into relation (11) and could be written as
( )
∫ ∫ ∫
=
x y z
L L L
C
z
y
x
С x
d
y
d
z
d
z
y
x
f
L
L
L 0 0 0
2 ,
,
1
α , (12)
( ) ( )
+
∫ ∫ ∫
−
−
+
+
+
=
x y z
L L L
I
z
y
x
IV
II
IV
V
II
IV
II
I x
d
y
d
z
d
z
y
x
f
L
L
L
A
A
A
A
A
A 0 0 0
11
00
2
00
2
10
01
00
2 ,
,
1
4
1
2
1
α
α
7. International Journal in Foundations of Computer Science & Technology (IJFCST) Vol.6, No.4, July 2016
25
]}
00
00
2
10
01
2
1
20
10
2
2
1
II
IV
V
II
IV
II
IV
V
A
A
A
A
A
A
α
α
+
+
+
−
−
+ (13a)
( )
4
3
1
3
4
2
3
4
2
4
4
4
2
1
B
A
B
A
B
y
B
y
B
A
B
B
V
+
−
−
+
−
+
=
α . (13b)
Here ( ) ( ) ( ) ( )
∫ ∫ ∫ ∫
−
Θ
Θ
=
Θ
0 0 0 0
1
1
, ,
,
,
,
,
,
,
,
,
1 x y z
L L L
j
i
b
a
z
y
x
abij t
d
x
d
y
d
z
d
t
z
y
x
V
t
z
y
x
I
T
z
y
x
k
t
L
L
L
A , −
= 2
00
2
00
4 IV
IV A
A
B
( )2
00
00
2
00
2 VV
II
IV A
A
A −
− , ×
+
+
−
+
= 01
2
00
01
00
2
00
00
10
2
00
10
00
2
00
00
3 2
4 IV
IV
IV
IV
IV
II
IV
IV
II
IV
IV
IV A
A
A
A
A
A
A
A
A
A
A
A
B
( ) ( ) ( )
[ ]
1
2
1
2
2
4 10
10
00
10
01
00
00
01
00
00
2
00
3
00 +
+
−
+
+
+
−
−
× VV
IV
II
II
IV
IV
IV
IV
VV
II
IV
IV A
A
A
A
A
A
A
A
A
A
A
A , =
2
B
( )
{ ( )−
−
+
+
+
+
+
+
= 00
10
10
00
01
00
00
00
00
2
01
2
00
2
10
01
2
00 4
2
1 II
IV
II
IV
IV
IV
IV
IV
IV
IV
IV
II
IV
IV A
A
A
A
A
A
A
A
A
A
A
A
A
A
( ) ( )
[
{ −
+
+
+
∫ ∫ ∫
−
−
− 10
01
00
00
01
0 0 0
20
11
00 1
2
2
,
,
1
4 II
IV
IV
IV
IV
L L L
I
z
y
x
II
IV
II A
A
A
A
A
x
d
y
d
z
d
z
y
x
f
L
L
L
A
A
A
x y z
( )] ( ) ( ) (
−
−
∫ ∫ ∫
+
+
+
+
+
+
− 20
00
0 0 0
10
01
01
2
10
10
00 2
,
,
2
1
2
1
2 VV
II
L L L
V
z
y
x
II
IV
IV
VV
IV
II A
A
x
d
y
d
z
d
z
y
x
f
L
L
L
A
A
A
A
A
A
x y z
) ( )] ( ) ( )
[ ]}
1
2
2
1
2
1 10
10
00
00
01
10
01
00
10
01
01
11 +
+
−
+
+
+
+
+
+
− VV
IV
II
IV
IV
II
IV
IV
II
IV
IV
IV A
A
A
A
A
A
A
A
A
A
A
A ,
( ) ( ) ×
+
∫ ∫ ∫
−
−
−
+
+
= 01
00
0 0 0
20
11
2
10
01
01
00
1 ,
,
1
8
1
2 IV
IV
L L L
I
z
y
x
II
IV
II
IV
IV
IV A
A
x
d
y
d
z
d
z
y
x
f
L
L
L
A
A
A
A
A
A
B
x y z
( ) ( )
+
∫ ∫ ∫
−
−
+
+
+
×
x y z
L L L
I
z
y
x
II
II
IV
II
IV
IV
IV
IV
IV
II x
d
y
d
z
d
z
y
x
f
L
L
L
A
A
A
A
A
A
A
A
A
A
0 0 0
00
00
10
10
00
01
00
00
2
01
00 ,
,
2
2
4
( ) ( ) ( )] ( )
[ −
+
+
+
+
+
−
−
+
+
+ 10
01
00
10
01
01
11
20
00
10
01
01 1
2
1
2
1 II
IV
IV
II
IV
IV
IV
VV
II
II
IV
IV A
A
A
A
A
A
A
A
A
A
A
A
( ) ]
00
01
00
10
10 2
1
2 IV
IV
II
VV
IV A
A
A
A
A +
+
+
− , ( ) ×
−
∫ ∫ ∫
+
= 11
0 0 0
20
0 ,
,
1
IV
L L L
I
z
y
x
II A
x
d
y
d
z
d
z
y
x
f
L
L
L
A
B
x y z
( ) ( ) ( )
−
+
+
+
∫ ∫ ∫
−
+
+
+
× 10
01
01
0 0 0
00
2
10
01
2
01
2
01
00 1
,
,
2
1
4 II
IV
IV
L L L
V
z
y
x
II
II
IV
IV
IV
II A
A
A
x
d
y
d
z
d
z
y
x
f
L
L
L
A
A
A
A
A
A
x y z
( ) ( )]2
10
01
01
11
20
00 1
2 II
IV
IV
IV
VV
II A
A
A
A
A
A +
+
+
−
− ,
6
2
3 3
2
3 3
2 B
q
p
q
q
p
q
y +
+
+
−
−
+
= , ×
=
48
2
B
q
( ) ( )
8
4
216
8
2
2
1
2
3
2
0
3
2
0
3
1
B
B
B
B
B
B
B
B
−
−
+
+
−
× ,
( )
72
2
8
2
3 2
2
0
3
1 B
B
B
B
p
−
−
= , 2
2
3 4
8 B
B
y
A −
+
= ,
( ) ( ) ( ) +
∫ ∫ ∫ ∫
−
Θ
Θ
−
=
Θ
Φ
0 0 0 0
20
2 ,
,
,
,
,
,
1 x y z
I
L L L
I
z
y
x
II t
d
x
d
y
d
z
d
t
z
y
x
I
T
z
y
x
k
t
L
L
L
A
α
( )
∫ ∫ ∫
+ Φ
x y z
L L L
I
z
y
x
x
d
y
d
z
d
z
y
x
f
L
L
L 0 0 0
,
,
1
(14)
( ) ( ) ( ) +
∫ ∫ ∫ ∫
−
Θ
Θ
−
=
Θ
Φ
0 0 0 0
20
2 ,
,
,
,
,
,
1 x y z
V
L L L
V
z
y
x
VV t
d
x
d
y
d
z
d
t
z
y
x
V
T
z
y
x
k
t
L
L
L
A
α
( )
∫ ∫ ∫
+ Φ
x y z
L L L
V
z
y
x
x
d
y
d
z
d
z
y
x
f
L
L
L 0 0 0
,
,
1
.
8. International Journal in Foundations of Computer Science & Technology (IJFCST) Vol.6, No.4, July 2016
26
After the substitution one can obtain equation for parameter α2C. Solution of the equation will be
different for different values of parameter γ. We analyzed distributions of concentrations of do-
pant and radiation defects in space and time by using the second-order approximations framework
the method of averaging of function corrections with decreased quantity of iterative steps. The
approximations are usually enough good approximation to make qualitative analysis and obtain
some quantitative results. We check our analytical results by comparison with results of numeri-
cal simulation.
3. DISCUSSION
In this section we analyzed spatio-temporal distribution of concentration of infused (see Fig. 2a)
and implanted (see Fig. 2b) dopants in the considered epitaxial layer. Annealing time is the same
for the each curve framework each figure. Increasing of difference between values of dopant dif-
fusion coefficient in layers of heterostructure corresponds to increasing of number of curves on
these figures. One can find from these figures, that inhomogeneity of heterostructure leads to in-
creasing of gradient of concentration of dopant at absolute value in direction, which is perpendic-
ular to the interface. In this situation one can find decreasing of dimensions of transistors frame-
work the considered element SRAM. One can also find increasing homogeneity of distribution of
concentrations of dopants in doped areas.
With increasing annealing time gradient of concentration of dopant near interface between epitax-
ial layer and substrate decreases at absolute value. Decreasing of value of annealing time leads to
increasing of inhomogeneity of distribution of concentration of dopant (see Figs. 3a for diffusion
type of doping and 3b for ion type of doping). We determine the compromise value of annealing
time framework recently introduced criterion [15-22]. To use the criterion we approximate distri-
bution of concentration of dopant by idealized step-wise function ψ(x,y,z). Compromise value of
annealing time we calculate by minimization of the mean-squared error
( ) ( )
[ ]
∫ ∫ ∫ −
Θ
=
x y z
L L L
z
y
x
x
d
y
d
z
d
z
y
x
z
y
x
C
L
L
L
U
0 0 0
,
,
,
,
,
1
ψ . (8)
Fig.2a. Distributions of concentration of dopant, which has been infused in the considered heterostructure
under condition, when value of dopant diffusion coefficient in epitaxial layer is larger, than value of dopant
diffusion coefficient in substrate. Number of curves increases with increasing of difference between values
of dopant diffusion coefficient
9. International Journal in Foundations of Computer Science & Technology (IJFCST) Vol.6, No.4, July 2016
27
x
0.0
0.5
1.0
1.5
2.0
C(x,
Θ
)
2
3
4
1
0 L/4 L/2 3L/4 L
Epitaxial layer Substrate
Fig.2b. Distributions of concentration of dopant, which has been implanted in the considered heterostruc-
ture under condition, when value of dopant diffusion coefficient in epitaxial layer is larger, than value of
dopant diffusion coefficient in substrate. Curves 1 and 3 are distributions of concentration of dopant in ho-
mogenous sample at annealing time Θ=0.0048(Lx
2
+Ly
2
+Lz
2
)/D0. Curves 1 and 3 are distributions of concen-
tration of dopant in heterostructure at annealing time Θ=0.0057(Lx
2
+Ly
2
+Lz
2
)/D0.
C(x,
Θ
)
0 Lx
2
1
3
4
Fig. 3a. Distributions of concentration of infused dopant in heterostructure. Curve 1 is the idealized distri-
bution of dopant. Curves 2-4 are the real distributions of concentration of dopant in heterostructure. Num-
ber of curves increases with increasing of annealing time
10. International Journal in Foundations of Computer Science & Technology (IJFCST) Vol.6, No.4, July 2016
28
x
C(x,
Θ
)
1
2
3
4
0 L
Fig. 3b. Distributions of concentration of implanted dopant in heterostructure. Curve 1 is the idealized dis-
tribution of dopant. Curves 2-4 are the real distributions of concentration of dopant in heterostructure.
Number of curves increases with increasing of annealing time
Optimal values of annealing time as functions of parameters are presented on Figs. 4. Fig. 4a cor-
responds to diffusion type of doping. Fig. 4b corresponds to ion type of doping. After ion implan-
tation radiation defects should be annealed. Distribution of concentration of dopant will be
spreads during the annealing. Distribution of dopant achieves appropriate interfaces between lay-
ers of heterostructures in the ideal case. If dopant have not enough time to achieve the interface,
additional annealing of dopant attracted an interest, which will be smaller, than for infused do-
pant. However it should be noted, that ion type of doping leads to decreasing of mismatch-
induced stress in heterostructure [23].
0.0 0.1 0.2 0.3 0.4 0.5
a/L, ξ, ε, γ
0.0
0.1
0.2
0.3
0.4
0.5
Θ
D
0
L
-2
3
2
4
1
Fig.4a. Optimal annealing time of infused dopant as a function of different parameters. Curve 1 describes
dependence of optimal annealing time on a/L at ξ=γ=0 and equal to each other values of dopant diffusion
coefficient in all parts of heterostructure. Curve 2 describes dependence of optimal annealing time on ε at
a/L=1/2 and ξ=γ=0. Curve 3 describes dependence of optimal annealing time on ξ for a/L=1/2 and ε=γ=0.
Curve 4 describes dependence of optimal annealing time on γ at a/L=1/2 and ε=ξ=0
11. International Journal in Foundations of Computer Science & Technology (IJFCST) Vol.6, No.4, July 2016
29
0.0 0.1 0.2 0.3 0.4 0.5
a/L, ξ, ε, γ
0.00
0.04
0.08
0.12
Θ
D
0
L
-2
3
2
4
1
Fig.4b. Optimal annealing time of implanted dopant as a function of different parameters. Curve 1 de-
scribes dependence of optimal annealing time on a/L at ξ=γ=0 and equal to each other values of dopant
diffusion coefficient in all parts of heterostructure. Curve 2 describes dependence of optimal annealing time
on ε at a/L=1/2 and ξ=γ=0. Curve 3 describes dependence of optimal annealing time on ξ for a/L=1/2 and
ε=γ=0. Curve 4 describes dependence of optimal annealing time on γ at a/L=1/2 and ε=ξ=0
4. CONCLUSIONS
In this paper we introduced an analytical approach to prognosis of concentrations of infused and
implanted dopants. By using the approach we analyzed changing of these concentrations during
manufacturing field-effect transistors framework the element SRAM. We formulate recommen-
dations for optimization of annealing to decrease dimensions transistors and to increase their di-
mensions.
ACKNOWLEDGEMENTS
This work is supported by the agreement of August 27, 2013 № 02.В.49.21.0003 between The
Ministry of education and science of the Russian Federation and Lobachevsky State University of
Nizhni Novgorod, educational fellowship for scientific research of Government of Russian and
educational fellowship for scientific research of Government of Nizhny Novgorod region of Rus-
sia.
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AUTHORS
Pankratov Evgeny Leonidovich was born at 1977. From 1985 to 1995 he was educated in a secondary
school in Nizhny Novgorod. From 1995 to 2004 he was educated in Nizhny Novgorod State University:
from 1995 to 1999 it was bachelor course in Radiophysics, from 1999 to 2001 it was master course in Ra-
diophysics with specialization in Statistical Radiophysics, from 2001 to 2004 it was PhD course in Radio-
physics. From 2004 to 2008 E.L. Pankratov was a leading technologist in Institute for Physics of Micro-
structures. From 2008 to 2012 E.L. Pankratov was a senior lecture/Associate Professor of Nizhny Novgo-
rod State University of Architecture and Civil Engineering. 2012-2015 Full Doctor course in Radiophysical
Department of Nizhny Novgorod State University. Since 2015 E.L. Pankratov is an Associate Professor of
Nizhny Novgorod State University. He has 155 published papers in area of his researches.
Bulaeva Elena Alexeevna was born at 1991. From 1997 to 2007 she was educated in secondary school of
village Kochunovo of Nizhny Novgorod region. From 2007 to 2009 she was educated in boarding school
“Center for gifted children”. From 2009 she is a student of Nizhny Novgorod State University of Architec-
ture and Civil Engineering (spatiality “Assessment and management of real estate”). At the same time she
is a student of courses “Translator in the field of professional communication” and “Design (interior art)”
in the University. Since 2014 E.A. Bulaeva is in a PhD program in Radiophysical Department of Nizhny
Novgorod State University. She has 110 published papers in area of her researches.