This document summarizes a numerical simulation of a graded band gap GaAs/AlGaAs heterojunction solar cell performed with AMPS-1D modeling software. The simulation analyzed how a graded band gap region at the interface between the GaAs emitter and AlGaAs base layers affects solar cell performance. Results showed that a 0.14μm graded band gap region was needed to eliminate the conduction band spike and improve cell performance over an abrupt heterojunction. Photovoltaic parameters, including efficiency, of 31.1% were obtained for the cell with a graded interface, compared to 27.3% for an abrupt heterojunction cell.