A Survey Analysis on CMOS Integrated Circuits with Clock-Gated Logic StructureIJERA Editor
Various circuit design techniques has been presented to improve noise tolerance of the proposed CGS logic families. Noise in deep submicron technology limits the reliability and performance of ICs. The ANTE (Average Noise Threshold Energy) metric is used for the analysis of noise tolerance of proposed CGS. A 2-input NAND and NOR gate is designed by the proposed technique. Simulation results for a 2-input NAND gate at clock gated logic show that the proposed noise tolerant circuit achieves 1.79X ANTE improvement along with the reduction in leakage power. Continuous scaling of technology towards the manometer range significantly increases leakage current level and the effect of noise. This research can be further extended for performance optimization in terms of power, speed, area and noise immunity.
CMOS Analog IC design by Dr GS Javed - Refresher Course - Batch 1Javed G S, PhD
Topics covered in the course
1. DC Biasing of the circuits
2. Circuits for reference voltage and current generation
-Voltage Regulator
-BGR
-LDO
-V-to-I
3. Precision Current References
4. Opamp design for Analog to digital converters
- OTA
- Buffer
- Unity Feedback OTA
- Layout design strategies – 2stage opamp + CMFB
5. Sense and Return mechanisms in Feedback circuits
- Current and Voltage circuits
6. Sub-Threshold Conduction
- Low voltage Operation
7. ADC Design and Simulation
-Near Nyquist performance of Opamp for ADC Circuits
-Spectral Analysis and No. of FFT Points for simulation
-Simulation time for performance
-Resistors – their variation and Calibration
-Switch design for S/H
-CDAC
8. On-Chip Inductors
ER Publication,
IJETR, IJMCTR,
Journals,
International Journals,
High Impact Journals,
Monthly Journal,
Good quality Journals,
Research,
Research Papers,
Research Article,
Free Journals, Open access Journals,
erpublication.org,
Engineering Journal,
Science Journals,
A novel approach for leakage power reduction techniques in 65nm technologiesVLSICS Design
The rapid progress in semiconductor technology have led the feature sizes of transistor to be shrunk there
by evolution of Deep Sub-Micron (DSM) technology; there by the extremely complex functionality is
enabled to be integrated on a single chip. In the growing market of mobile hand-held devices used all over
the world today, the battery-powered electronic system forms the backbone. To maximize the battery life,
the tremendous computational capacity of portable devices such as notebook computers, personal
communication devices (mobile phones, pocket PCs, PDAs), hearing aids and implantable pacemakers has
to be realized with very low power requirements. Leakage power consumption is one of the major technical
problem in DSM in CMOS circuit design. A comprehensive study and analysis of various leakage power
minimization techniques have been presented in this paper a novel Leakage reduction technique is
developed in Cadence virtuoso in 65nm regim with the combination of stack with sleepy keeper approach
with Low Vth & High Vth which reduces the Average Power with respect Basic Nand Gate 29.43%, 39.88%,
Force Stack 56.98, 63.01%, sleep transistor with Low Vth & High Vth 13.90, 26.61% & 33.03%, 75.24%
with respect to sleepy Keeper 93.70, 56.01% of Average Power is saved.
A NOVEL APPROACH FOR LEAKAGE POWER REDUCTION TECHNIQUES IN 65NM TECHNOLOGIESVLSICS Design
The rapid progress in semiconductor technology have led the feature sizes of transistor to be shrunk there by evolution of Deep Sub-Micron (DSM) technology; there by the extremely complex functionality is enabled to be integrated on a single chip. In the growing market of mobile hand-held devices used all over the world today, the battery-powered electronic system forms the backbone. To maximize the battery life, the tremendous computational capacity of portable devices such as notebook computers, personal communication devices (mobile phones, pocket PCs, PDAs), hearing aids and implantable pacemakers has to be realized with very low power requirements. Leakage power consumption is one of the major technical problem in DSM in CMOS circuit design. A comprehensive study and analysis of various leakage power minimization techniques have been presented in this paper a novel Leakage reduction technique is developed in Cadence virtuoso in 65nm regim with the combination of stack with sleepy keeper approach with Low Vth & High Vth which reduces the Average Power with respect Basic Nand Gate 29.43%, 39.88%, Force Stack 56.98, 63.01%, sleep transistor with Low Vth & High Vth 13.90, 26.61% & 33.03%, 75.24% with respect to sleepy Keeper 93.70, 56.01% of Average Power is saved.
The French Revolution, which began in 1789, was a period of radical social and political upheaval in France. It marked the decline of absolute monarchies, the rise of secular and democratic republics, and the eventual rise of Napoleon Bonaparte. This revolutionary period is crucial in understanding the transition from feudalism to modernity in Europe.
For more information, visit-www.vavaclasses.com
A Survey Analysis on CMOS Integrated Circuits with Clock-Gated Logic StructureIJERA Editor
Various circuit design techniques has been presented to improve noise tolerance of the proposed CGS logic families. Noise in deep submicron technology limits the reliability and performance of ICs. The ANTE (Average Noise Threshold Energy) metric is used for the analysis of noise tolerance of proposed CGS. A 2-input NAND and NOR gate is designed by the proposed technique. Simulation results for a 2-input NAND gate at clock gated logic show that the proposed noise tolerant circuit achieves 1.79X ANTE improvement along with the reduction in leakage power. Continuous scaling of technology towards the manometer range significantly increases leakage current level and the effect of noise. This research can be further extended for performance optimization in terms of power, speed, area and noise immunity.
CMOS Analog IC design by Dr GS Javed - Refresher Course - Batch 1Javed G S, PhD
Topics covered in the course
1. DC Biasing of the circuits
2. Circuits for reference voltage and current generation
-Voltage Regulator
-BGR
-LDO
-V-to-I
3. Precision Current References
4. Opamp design for Analog to digital converters
- OTA
- Buffer
- Unity Feedback OTA
- Layout design strategies – 2stage opamp + CMFB
5. Sense and Return mechanisms in Feedback circuits
- Current and Voltage circuits
6. Sub-Threshold Conduction
- Low voltage Operation
7. ADC Design and Simulation
-Near Nyquist performance of Opamp for ADC Circuits
-Spectral Analysis and No. of FFT Points for simulation
-Simulation time for performance
-Resistors – their variation and Calibration
-Switch design for S/H
-CDAC
8. On-Chip Inductors
ER Publication,
IJETR, IJMCTR,
Journals,
International Journals,
High Impact Journals,
Monthly Journal,
Good quality Journals,
Research,
Research Papers,
Research Article,
Free Journals, Open access Journals,
erpublication.org,
Engineering Journal,
Science Journals,
A novel approach for leakage power reduction techniques in 65nm technologiesVLSICS Design
The rapid progress in semiconductor technology have led the feature sizes of transistor to be shrunk there
by evolution of Deep Sub-Micron (DSM) technology; there by the extremely complex functionality is
enabled to be integrated on a single chip. In the growing market of mobile hand-held devices used all over
the world today, the battery-powered electronic system forms the backbone. To maximize the battery life,
the tremendous computational capacity of portable devices such as notebook computers, personal
communication devices (mobile phones, pocket PCs, PDAs), hearing aids and implantable pacemakers has
to be realized with very low power requirements. Leakage power consumption is one of the major technical
problem in DSM in CMOS circuit design. A comprehensive study and analysis of various leakage power
minimization techniques have been presented in this paper a novel Leakage reduction technique is
developed in Cadence virtuoso in 65nm regim with the combination of stack with sleepy keeper approach
with Low Vth & High Vth which reduces the Average Power with respect Basic Nand Gate 29.43%, 39.88%,
Force Stack 56.98, 63.01%, sleep transistor with Low Vth & High Vth 13.90, 26.61% & 33.03%, 75.24%
with respect to sleepy Keeper 93.70, 56.01% of Average Power is saved.
A NOVEL APPROACH FOR LEAKAGE POWER REDUCTION TECHNIQUES IN 65NM TECHNOLOGIESVLSICS Design
The rapid progress in semiconductor technology have led the feature sizes of transistor to be shrunk there by evolution of Deep Sub-Micron (DSM) technology; there by the extremely complex functionality is enabled to be integrated on a single chip. In the growing market of mobile hand-held devices used all over the world today, the battery-powered electronic system forms the backbone. To maximize the battery life, the tremendous computational capacity of portable devices such as notebook computers, personal communication devices (mobile phones, pocket PCs, PDAs), hearing aids and implantable pacemakers has to be realized with very low power requirements. Leakage power consumption is one of the major technical problem in DSM in CMOS circuit design. A comprehensive study and analysis of various leakage power minimization techniques have been presented in this paper a novel Leakage reduction technique is developed in Cadence virtuoso in 65nm regim with the combination of stack with sleepy keeper approach with Low Vth & High Vth which reduces the Average Power with respect Basic Nand Gate 29.43%, 39.88%, Force Stack 56.98, 63.01%, sleep transistor with Low Vth & High Vth 13.90, 26.61% & 33.03%, 75.24% with respect to sleepy Keeper 93.70, 56.01% of Average Power is saved.
The French Revolution, which began in 1789, was a period of radical social and political upheaval in France. It marked the decline of absolute monarchies, the rise of secular and democratic republics, and the eventual rise of Napoleon Bonaparte. This revolutionary period is crucial in understanding the transition from feudalism to modernity in Europe.
For more information, visit-www.vavaclasses.com
How to Make a Field invisible in Odoo 17Celine George
It is possible to hide or invisible some fields in odoo. Commonly using “invisible” attribute in the field definition to invisible the fields. This slide will show how to make a field invisible in odoo 17.
Normal Labour/ Stages of Labour/ Mechanism of LabourWasim Ak
Normal labor is also termed spontaneous labor, defined as the natural physiological process through which the fetus, placenta, and membranes are expelled from the uterus through the birth canal at term (37 to 42 weeks
June 3, 2024 Anti-Semitism Letter Sent to MIT President Kornbluth and MIT Cor...Levi Shapiro
Letter from the Congress of the United States regarding Anti-Semitism sent June 3rd to MIT President Sally Kornbluth, MIT Corp Chair, Mark Gorenberg
Dear Dr. Kornbluth and Mr. Gorenberg,
The US House of Representatives is deeply concerned by ongoing and pervasive acts of antisemitic
harassment and intimidation at the Massachusetts Institute of Technology (MIT). Failing to act decisively to ensure a safe learning environment for all students would be a grave dereliction of your responsibilities as President of MIT and Chair of the MIT Corporation.
This Congress will not stand idly by and allow an environment hostile to Jewish students to persist. The House believes that your institution is in violation of Title VI of the Civil Rights Act, and the inability or
unwillingness to rectify this violation through action requires accountability.
Postsecondary education is a unique opportunity for students to learn and have their ideas and beliefs challenged. However, universities receiving hundreds of millions of federal funds annually have denied
students that opportunity and have been hijacked to become venues for the promotion of terrorism, antisemitic harassment and intimidation, unlawful encampments, and in some cases, assaults and riots.
The House of Representatives will not countenance the use of federal funds to indoctrinate students into hateful, antisemitic, anti-American supporters of terrorism. Investigations into campus antisemitism by the Committee on Education and the Workforce and the Committee on Ways and Means have been expanded into a Congress-wide probe across all relevant jurisdictions to address this national crisis. The undersigned Committees will conduct oversight into the use of federal funds at MIT and its learning environment under authorities granted to each Committee.
• The Committee on Education and the Workforce has been investigating your institution since December 7, 2023. The Committee has broad jurisdiction over postsecondary education, including its compliance with Title VI of the Civil Rights Act, campus safety concerns over disruptions to the learning environment, and the awarding of federal student aid under the Higher Education Act.
• The Committee on Oversight and Accountability is investigating the sources of funding and other support flowing to groups espousing pro-Hamas propaganda and engaged in antisemitic harassment and intimidation of students. The Committee on Oversight and Accountability is the principal oversight committee of the US House of Representatives and has broad authority to investigate “any matter” at “any time” under House Rule X.
• The Committee on Ways and Means has been investigating several universities since November 15, 2023, when the Committee held a hearing entitled From Ivory Towers to Dark Corners: Investigating the Nexus Between Antisemitism, Tax-Exempt Universities, and Terror Financing. The Committee followed the hearing with letters to those institutions on January 10, 202
Honest Reviews of Tim Han LMA Course Program.pptxtimhan337
Personal development courses are widely available today, with each one promising life-changing outcomes. Tim Han’s Life Mastery Achievers (LMA) Course has drawn a lot of interest. In addition to offering my frank assessment of Success Insider’s LMA Course, this piece examines the course’s effects via a variety of Tim Han LMA course reviews and Success Insider comments.
Welcome to TechSoup New Member Orientation and Q&A (May 2024).pdfTechSoup
In this webinar you will learn how your organization can access TechSoup's wide variety of product discount and donation programs. From hardware to software, we'll give you a tour of the tools available to help your nonprofit with productivity, collaboration, financial management, donor tracking, security, and more.
Operation “Blue Star” is the only event in the history of Independent India where the state went into war with its own people. Even after about 40 years it is not clear if it was culmination of states anger over people of the region, a political game of power or start of dictatorial chapter in the democratic setup.
The people of Punjab felt alienated from main stream due to denial of their just demands during a long democratic struggle since independence. As it happen all over the word, it led to militant struggle with great loss of lives of military, police and civilian personnel. Killing of Indira Gandhi and massacre of innocent Sikhs in Delhi and other India cities was also associated with this movement.
2. Evaluation of Transistor
A piece of gold foil was glued to the edge of a triangular
plastic wedge, and then the foil was sliced with a razor at
the tip of the triangle. The result was two very closely
spaced contacts of gold.
Vacuum Tube is a device that controls electric current flow
in a high vacuum between electrodes to which an
electric potential difference has been applied.
3. Integrated Circuit (IC)
Jack Kilby's original hybrid
integrated circuit from 1958. This
was the first integrated circuit, and
was made from germanium.
Reduce size of circuits.
Increased cost-effectiveness for
devices.
Improved performance in terms of
operating speed of the circuits.
Requires less power than discrete
components.
Higher device reliability.
Requires less space and promotes
miniaturization.
Advantage of VLSI
4.
5. VLSI Development Process
VLSI Development Process Includes
Problem Specification
Architecture Definition
Functional Design
Logic Design
Circuit Design
Physical Design
Circuit Partitioning
Floor Planning and Placement
Routing
Layout Compaction
Extraction and Verification
Packaging
Package
Entity Declaration
Architecture
Process
Config
VHDL Code Blocks
6. VLSI Design Process
Full Custom Design Semi Custom Design
Complete deign, layout, geometry,
orientation and placement of transistor is
done by resistor.
Some commonly used design, layout
geometry and placement of transistor is
interfaced with given demand.
Entire design is made without use of any
library.
Design is completed with the use of multiple
multiple library.
Development time for design before
maturity is more.
Development time for design before
maturity is less.
It has more opportunity for performance
improvement.
It has less opportunity for performance
improvement.
Less dependency on existing technology. Complete dependency on existing
technology.
High Cost Low Cost
10. CMOS Operation
VG = 0, p+ majority carriers freely floating to
the p substrate.
VG<0, Freely floating holes are accumulated
near to the meal oxide layer. [Accumulation
Mode]
0<VG<VT, Holes will start to ripple.
[Depletion Mode]
VG>VT, Current will start to flow from VDD to
VSS [Inversion Mode]
11. pMOS vs nMOS
Type nMOS pMOS
Symbol
Structure Source, Drain – n Type
Substrate – p Type
Source, Drain – p Type
Substrate – n Type
Majority Carrier Electron Holes
Current Flow Drain to Source Source to Drain
Size Smaller compared to
pMOS
Larger compared to
nMOS
Working If G = 0, o/p = 0
If G = 1, o/p = 1
If G = 0, o/p = 1
If G = 1, o/p = 0
Operating Speed Faster Slower
12. CMOS Operation
Region Vin Vout nMOS pMOS
A VIN<V
VT
VOH OFF SAT
B VIL VOH SAT LIN
C VT VT SAT SAT
D VIH VOL LIN SAT
E VDD VOL LIN OFF
A B
C
D
*SAT - Saturation, **LIN - Linear
13. CMOS Fabrication
Process Includes
Wafer Clean and Prime
Photoresist Coating
Soft Bake
Post-exposure Bake
Development
Pattern Inspection
Hardbake
Photoresist Stripping
p Well Process
Twin Tub Process
14. Gates using CMOS
At nMOS
If G = 0, OFF
If G = 1, ON
At pMOS
If G = 0, ON
If G = 1, OFF
pMOS Transistor can easily pass Logic HIGH
nMOS Transistor can easily pass Logic LOW
Pullup - a network that provides a low
resistance path to Vdd when output is
logic '1' and provides a high resistance to
Vdd otherwise.
Pulldown - a network that provides a low
resistance path to Gnd when output is
logic '0' and provides a high resistance to
Gnd otherwise.
AND (.) Operation
pMOS – Parallel
nMOS – Series
OR (+) Operation
nMOS – Parallel
pMOS – Series
15. Gates using CMOS Contd.
CMOS NAND Gate
AND (.) Operation
pMOS – Parallel
nMOS – Series
OR (+) Operation
nMOS – Parallel
pMOS – Series
Input pMOS nMOS Out
A B Q1 Q2 Q3 Q4
0 0 ON ON OFF OFF 1
0 1 ON OFF OFF ON 1
1 0 OFF ON ON OFF 1
1 1 OFF OFF ON ON 0
Q1 Q2
Q3
Q4
16. Gates using CMOS Contd.
CMOS NOR Gate
AND (.) Operation
pMOS – Parallel
nMOS – Series
OR (+) Operation
nMOS – Parallel
pMOS – Series
Input pMOS nMOS Out
A B Q1 Q2 Q3 Q4
0 0 ON ON OFF OFF 1
0 1 ON OFF OFF ON 1
1 0 OFF ON ON OFF 1
1 1 OFF OFF ON ON 0
Q1
Q2
Q3 Q4
VDD
GND
17. Gates using CMOS Contd.
CMOS SR Latch AND (.) Operation
pMOS – Parallel
nMOS – Series
OR (+) Operation
nMOS – Parallel
pMOS – Series
S R Q Qnot Oprt.
0 0 Memory Hold
0 1 0 1 Reset
1 0 1 0 Set
1 1 0 0 N/A
18. Stick Diagram
A Stick Diagram is a simple way of
representing the layout by using
thick lines with their
interconnections.
The diagram is useful in estimating
the area and planning the layout
before the layout is generated
withing a shorter cycle time.
A Stick Diagram can be called a
cartoon of layout. Lines using
different colors are used to draw
different components of the layout
Metal 1
poly
ndiff
pdiff
Can also draw
in shades of
gray/line style.
Gnd
VDD
x x
X
X
X
X
VDD
x x
Gnd
19. CMOS Transmission Gate
Trai State Buffer
AND (.) Operation
pMOS – Parallel
nMOS – Series
OR (+) Operation
nMOS – Parallel
pMOS – Series
Input Output
C A F State
0 0 Z OFF
0 1 Z OFF
1 0 0 ON
1 1 1 ON
*pMOS Good to PASS Logic ‘1’
21. Dynamic CMOS
Precharge
When CLK=0, the o/p node is precharged to
VDD by the pMOS Mp. During that time the
evaluate nMOS transistor Me is OFF, so that
the PDN path is disabled. The evaluation FET
eliminates any static power that would be
consumed during precharge period.
Evaluation
For CLK=1, the precharge transistor Mp is
OFF, and the evaluation transistor Me is
turned ON. The o/p is conditionally
discharged based on the i/p values and the
PDN topology. If the i/p are such that PDN
conducts, then a low resistance path exists
between Out and GND, the o/p is discharged
to GND.
22. PLA and PAL
Programmable Logic Array
The definition of term PLA presents the Boolean
function in the form of a sum of product (SOP).
The designing of this programmable logic array can
can be done using the logic gates like AND, OR, and
and NOT by fabricating on the chip, that makes
every input as well as its compliment obtainable
toward every AND gate.
Programmable Array Logic
The definition of term PAL or Programmable Array
Logic is one type of PLD which is known as
Programmable Logic Device circuit, and working of
this PAL is the same as the PLA. The designing of
the programmable array logic can be done with
fixed OR gates as well as programmable AND gates.
gates. By using this we can implement two easy
functions wherever the associates AND gates with
each OR gate denote the highest number of
product conditions that can be produced in the
form of SOP (sum of product) of an exact function.
Programmable Array Logic
Programmable Logic Array
23. Field Programmable Gate Array
FPGA - Field Programmable Gate Arrays (FPGAs) are semiconductor devices that are based around a matrix of configurable logic
blocks (CLBs) connected via programmable interconnects. FPGAs can be reprogrammed to desired application or functionality
requirements after manufacturing.
The architecture mainly consists of,
Configurable logic blocks
Configurable I/O blocks
Programmable interconnect
Configurable logic blocks
Configurable I/O blocks Programmable interconnect