This document is a comprehensive device modeling report for the LM311N voltage comparator, detailing its electrical characteristics and simulation results including parameters like saturation current, response times, and input offset voltage. It includes comparison tables comparing measured values with simulation results, highlighting error percentages in various parameters. Copyright notice from Bee Technologies Inc. is included, asserting rights over the document content.

1. Device Modeling Report
COMPONENTS : VOLTAGE COMPARATOR
PART NUMBER : LM311N/14
MANUFACTURER : NATIONAL
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

2. BJT MODEL
Pspice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
CJC Zero-bias Collector-Base Junction Capacitance
TF Forward Transit Time
TR Reverse Transit Time
DIODE MODEL
Pspice model
Model description
parameter
IS Saturation Current
RS Series Resistance
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

3. Output Low Voltage
Simulation result
Simulation
Evaluation Circuit
U1
NC NC
GND NC
IN+ NC
+
IN- V+
-
NC NC
V- O/P
V1 V2
V4 BAL BAL/STR
1.55 V3
I1
1.56 15
LM311N
50m
-15
0
Compasion Table
IO = 50mA Measurement Simulation %Error
Vol (V) 0.75 0.749735 -0.035
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

4. Response time (Rise time and Transition time)
Simulation result
OUTPUT
Evaluation Circuit
U2
NC NC
GND NC
IN+ NC
+
IN- V+
-
NC NC
V- O/P
Tr
V1 = -5m V5 BAL BAL/STR V7
V2 = 100m RL1
TD = 0 V6
TR = 0 500 15
LM311N
TF = 0
PW = 5u -15
PER = 10u V8
5
0
Compasion Table
Measurement Simulation % Error
Rising delay time (us) 0.125 0.124079 -0.737
Transition time (us) 0.140 0.13897 -0.736
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

5. Response time (Falling time)
Simulation result
OUTPUT
Evaluation Circuit
U1
NC NC
GND NC
IN+ NC
+
IN- V+
-
NC NC
V- O/P
Tf
V1 = -100m V1 BAL BAL/STR
V2 = 5m RL
TD = 0 V4 V3
TR = 0 500
LM311N
TF = 0 15
PW = 5u -15 V2
PER = 10u
5
0
Compasion Table
Measurement Simulation % Error
Falling delay time (us) 0.175 0.174974 -0.015
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

6. Input Offset Voltage Characteristics
Simulation result
Simulation
Evaluation Circuit
U2
NC NC
GND NC
output1
IN+ NC
R1
+
IN- V+
1k -
NC NC
V- O/P
BAL BAL/STR
V1
V2 V3
LM311N
0 -15 15
0
Compasion Table
Measurement Simulation %Error
Vio(mV) 2 1.9965 -0.175
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

7. Av Characteristics
Simulation result
Simulation
Evaluation Circuit
U2
NC NC
output
GND NC
IN+ NC
in
+
V2 IN- V+
-
R3
NC NC
1k 1.9965m
V- O/P
V1 V4 BAL BAL/STR
0Vdc V3
-15
15
LM311N
0
Av = 24.880 / 124.733u
Compasion Table
RL = 1k Measurement Simulation %Error
Av (V/mV) 200 199.466 -0.267
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

8. Input Bias Current Characteristics
Simulation result
Ib
IIO
Evaluation Circuit
U2
NC NC
GND NC
IN+ NC
+
IN- V+
-
NC NC
R1
V- O/P
V1 V2 BAL BAL/STR 1k
V4 V3
0Vdc
LM311N
0Vdc 15
-15
0
Compasion Table
Measurement Simulation % Error
Ib (nA) 100 100.059 0.059
IIO (nA) 6 6.0075 0.125
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004