SPICE MODEL of LM119H in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS : VOLTAGE COMPARATOR
PART NUMBER : LM119H
MANUFACTURER : NATIONAL
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

2. BJT MODEL
Pspice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
CJC Zero-bias Collector-Base Junction Capacitance
TF Forward Transit Time
TR Reverse Transit Time
DIODE MODEL
Pspice model
Model description
parameter
IS Saturation Current
RS Series Resistance
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

3. Output Low Voltage
Simulation result
Simulation
Evaluation Circuit
U1
OUT1 V+ IN-2
GND1 IN+2
- +
+ -
IN+1 GND2
I1 IN-1 V- OUT2
25m V4 V2
1.55 V1 LM119
V3
-15 15
1.56
0
Comparison Table
IO = 25mA Measurement Simulation %Error
Vol (V) 0.75 0.750342 0.046
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

4. Response time (Rise time and Transition time)
Simulation result
OUTPUT
Evaluation Circuit
U2
OUT1 V+ IN-2
Tr
GND1 IN+2
- +
+ -
RL1 IN+1 GND2 V7
500
15
V8 IN-1 V- OUT2
V1 = -5m V5
V2 = 100m LM119
5 TD = 0.5u
TR = 10n V6
TF = 10n -15
PW = 1u
PER = 2u
0
Comparison Table
Measurement Simulation % Error
Rising delay time (ns) 30 30.576 1.920
Transition time (ns) 45 45.115 0.256
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

5. Response time (Falling time)
Simulation result
OUTPUT
Evaluation Circuit
U1
OUT1 V+ IN-2
Tf
GND1 IN+2
- +
+ -
RL IN+1 GND2 V4
500
15
V2 IN-1 V- OUT2
V1 = -100m V1
5 V2 = 5m LM119
TD = 0.5u V3
TR = 10n -15
TF = 10n
PW = 1u
PER = 2u
0
Comparison Table
Measurement Simulation % Error
Falling delay time (ns) 50 49.233 -1.534
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

6. Input Offset Voltage Characteristics
Simulation result
Simulation
Evaluation Circuit
U1
OUT1 V+ IN-2
GND1 IN+2
output1
- +
+ -
IN+1 GND2 V3
RL
1.4k V1 15
0Vdc IN-1 V- OUT2
LM119
V4
-15
0
Comparison Table
Measurement Simulation %Error
Vio(mV) 0.7 0.700641 0.092
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

7. Av Characteristics
Simulation result
Simulation
Evaluation Circuit
U1
OUT1 V+ IN-2
GND1 IN+2
output
- +
+ -
IN+1 GND2 V3
RL in
V2
1.4k 15
IN-1 V- OUT2
0.700641m
LM119
V1 V4
0Vdc -15
0
Av = 24.982 / 626.236u
Comparison Table
Measurement Simulation %Error
Av (V/mV) 40 39.892 -0.270
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

8. Input Bias Current Characteristics
Simulation result
Ib
IIO
Evaluation Circuit
U1
OUT1 V+ IN-2
GND1 IN+2
- +
+ -
IN+1 GND2 V3
15
IN-1 V- OUT2
V1
V4 LM119
V2
0Vdc -15
0Vdc
0
Comparison Table
Measurement Simulation % Error
Ib (nA) 150 150.009 0.006
IIO (nA) 30 29.992 -0.027
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004