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1. Device Modeling Report
COMPONENTS : VOLTAGE COMPARATOR
PART NUMBER : LM111J/8/883
MANUFACTURER : NATIONAL
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
2. BJT MODEL
Pspice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
CJC Zero-bias Collector-Base Junction Capacitance
TF Forward Transit Time
TR Reverse Transit Time
DIODE MODEL
Pspice model
Model description
parameter
IS Saturation Current
RS Series Resistance
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
3. Output Low Voltage
Simulation result
Simulation
Evaluation Circuit
U1
O/GND V+
IN+ O/P
+
II- - BAL/STR
V- BAL
I1 V2
V1
V4 LM111J_8
50m
1.55 V3
-15 15
1.56
0
Compasion Table
IO = 50mA Measurement Simulation %Error
Vol (V) 0.75 0.752605 0.347
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
4. Response time (Rise time and Transition time)
Simulation result
OUTPUT
Evaluation Circuit
U2
O/GND V+
IN+ O/P Tr
+
II- - BAL/STR
V- BAL RL1
V7
500
LM111J_8
V1 = -5m V5
V2 = 100m V6 V8 15
TD = 0
TR = 0
TF = 0 -15 5
PW = 5u
PER = 10u
0
Compasion Table
Measurement Simulation % Error
Rising delay time (us) 0.125 0.123911 -0.871
Transition time (us) 0.125 0.125460 0.368
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
5. Response time (Falling time)
Simulation result
OUTPUT
Evaluation Circuit
U1
O/GND V+
IN+ O/P Tf
+
II- - BAL/STR
V- BAL RL
V3
500
LM111J_8
15
V1 = -100m V1 V4
V2 = 5m V2
TD = 0
TR = 0 -15
TF = 0 5
PW = 5u
PER = 10u
0
Compasion Table
Measurement Simulation % Error
Falling delay time (us) 0.175 0.175134 0.077
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
6. Input Offset Voltage Characteristics
Simulation result
Simulation
Evaluation Circuit
U1
output1 O/GND V+
IN+ O/P
+
II- - BAL/STR
R1
1k V- BAL
LM111J_8
V3
15
V1 V2
-15
0
0
Compasion Table
Measurement Simulation %Error
Vio(mV) 0.7 0.696510 -0.499
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
7. Av Characteristics
Simulation result
Simulation
Evaluation Circuit
U1
output
O/GND V+
in IN+ O/P
+
II- - BAL/STR
R3
V2
1k V- BAL
0.696510m
LM111J_8
V3
V4
V1 15
0Vdc -15
0
Av = 24.880 / 124.633u
Compasion Table
RL = 1k Measurement Simulation %Error
Av (V/mV) 200 199.626 -0.187
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
8. Input Bias Current Characteristics
Simulation result
Ib
IIO
Evaluation Circuit
U1
O/GND V+ R1
IN+ O/P
+
1k
II- - BAL/STR
V- BAL
LM111J_8
V1 V4 V3
V2 -15
15
0Vdc
0Vdc
0
Compasion Table
Measurement Simulation % Error
Ib (nA) 60 60.048 0.080
IIO (nA) 4 3.9812 -0.470
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004