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The Hall effect
Ref. Ihn Ch. 10
Reminder: The Lorentz Force
F = q[E + (v  B)]
Lorentz Force: Review
• Cyclotron Motion
FB = mar  qvB = (mv2/r)
• Orbit Radius
r = [(mv)/(|q|B)] = [p/(q|B|])
• Orbit Frequency
ω = 2πf = (|q|B)/m
• Orbit Energy
K = (½)mv2 = (q2B2R2)/2m
• Velocity Filter
Undeflected trajectories in crossed E & B fields:
v = (E/B)
A Momentum Filter!!
A Mass Measurement Method!
Hall Effect
Electrons move in the y
direction and an electric
field component appears
in the y direction, Ey. This
will continue until the
Lorentz force is equal and
opposite to the electric
force due to the buildup of
electrons – that is, a
steady condition arises.
B
Hall Resistance
Rxy (Ohms)
The Classical Hall Effect
The Lorentz Force tends to deflect jx. However, this sets up
an E-field which balances that Lorentz Force. Balance occurs when
Ey = vxBz = Vy/Ly. But jx = nevx (or ix = nevxAx). So
Rxy = Vy / ix = RH Bz × (Ly/Ax) where RH = 1/ned
Ly is the transverse width of the sample
Ax is the transverse cross sectional area
0 2 4 6 8 10
200
0
1200
1000
800
600
400
1400
Slope Related to RH &
Sample Dimensions
Magnetic Field (Tesla)
Ax
Ly
3d-Hall coefficient
d
Vx
Vy
I
Hall’s Experiment (1879):
B
+ + + +
- - - -
Hall’s Experiment (1879):
B
Vx
Vy
I
+ + + +
- - - -
B
Ryx=Vy / Ix
B
Rxx=Vx / Ix
Roughly
Explained by
Drude Theory
1900
The Drude theory of metals: the free electron theory of
metals
Paul Drude (1900): theory of electrical and thermal conduction in a metal
application of the kinetic theory of gases to a metal,
which is considered as a gas of electrons
mobile negatively charged electrons are confined in a
metal by attraction to immobile positively charged ions
isolated atom
nucleus charge eZa
Z valence electrons are weakly bound to the nucleus (participate in chemical reactions)
Za – Z core electrons are tightly bound to the nucleus (play much less of a role in chemical
reactions)
in a metal – the core electrons remain bound to the nucleus to form the metallic ion
the valence electrons wander far away from their parent atoms
called conduction electrons or electrons
in a metal
The basic assumptions of the Drude model
1. between collisions the interaction of a given electron
with the other electrons is neglected
and with the ions is neglected
2. collisions are instantaneous events
Drude considered electron scattering off
the impenetrable ion cores
the specific mechanism of the electron scattering is not considered below
3. an electron experiences a collision with a probability per unit time 1/τ
dt/τ – probability to undergo a collision within small time dt
randomly picked electron travels for a time τ before the next collision
τ is known as the relaxation time, the collision time, or the mean free time
τ is independent of an electron position and velocity
4. after each collision an electron emerges with a velocity that is randomly directed and
with a speed appropriate to the local temperature
independent electron approximation
free electron approximation
DC electrical conductivity of a metal
V = RI Ohm’s low
the Drude model provides an estimate for the resistance
introduce characteristics of the metal which are independent on the shape of the wire
j=I/A – the current density
 – the resistivity
R=L/A – the resistance
= 1/ the conductivity
v is the average electron velocity
en
 
j v
e
m

 
E
v E
j 








m
ne 
2
j
E 
 E
j 

m
ne 

2

E
j 

L
A
at room temperatures
resistivities of metals are typically of the order of microohm centimeters (ohm-cm)
and  is typically 10-14 – 10-15 s
2
ne
m

 
mean free path l=v0
v0 – the average electron speed
l measures the average distance an electron travels between collisions
estimate for v0 at Drude’s time → v0~107 cm/s → l ~ 1 – 10 Å
consistent with Drude’s view that collisions are due to electron bumping into ions
at low temperatures very long mean free path can be achieved
l > 1 cm ~ 108 interatomic spacings!
the electrons do not simply bump off the ions!
the Drude model can be applied where
a precise understanding of the scattering mechanism is not required
particular cases: electric conductivity in spatially uniform static magnetic field
and in spatially uniform time-dependent electric field
Very disordered metals and semiconductors
T
k
mv B
2
3
2
1
2
0 
motion under the influence of the force f(t) due to spatially uniform
electric and/or magnetic fields
equation of motion
for the momentum per electron
electron collisions introduce a frictional damping term for the momentum per electron
)
(
)
(
)
(
t
t
dt
t
d
f
p
p




( ) ( )
t m t

p v
average
momentum
average
velocity
Hall effect and magnetoresistance
Edwin Herbert Hall (1879): discovery of the Hall effect
L e B
  
F v
the Lorentz force
in equilibrium jy = 0 → the transverse field (the Hall field) Ey due to the accumulated charges
balances the Lorentz force
quantities of interest:
magnetoresistance
(transverse magnetoresistance)
Hall (off-diagonal) resistance
( ) x
xx
x
y
yx
x
y
H
x
E
H
j
E
j
E
R
j B
 

 


RH → measurement of the sign of the carrier charge
RH is positive for positive charges and negative for negative charges
the Hall effect is the electric
field developed across two
faces of a conductor
in the direction j×B
when a current j flows across
a magnetic field B
( ) x
xx
x
y
yx
x
V
R H R
I
V
R
I
 

resistivity
Hall resistivity
the Hall coefficient
Hall Effect
ẑ
B
x̂
E
ẑ
ŷ
x̂
v
Initially,
z
x
z
y
x
B
E
v
v
v





)
B
v
E
(
v
1
F
















 e
dt
d
m

)
(
1
)
(
1
x
y
y
x
x
B
v
e
v
dt
d
m
F
B
v
E
e
v
dt
d
m
F
y
x






















m = effective mass
)
(
)
(
x
y
y
y
x
x
B
v
E
e
mv
B
v
E
e
mv








Hall Effect
m
eB

C







x
C
y
y
y
C
x
x
v
m
E
e
v
v
m
E
e
v






Steady state condition:
Hall Effect
x
x E
m
eB
E
E C
y


 



e
v
m
E
v
m
E
e
v
x
C
y
x
C
y
y 0












e
v
m
E
E
m
e
v
x
x
x
x





Hall Effect
The Hall coefficient is defined as:
ne
B
E
m
ne
E
m
eB
B
j
E
R
1
x
2
x
x
y
H 






• Why is the Hall Effect useful? It can determine the carrier type
(electron vs. hole) & the carrier density n for a semiconductor.
• How? Place the semiconductor into external B field, push
current along one axis, & measure the induced Hall voltage VH
along the perpendicular axis.
n = [(IB)/(qwVH)]
Semiconductors: Charge Carrier Density via Hall Effect
Hole Electron
+ charge – charge
B
F qv B
 
 

VL
B
VH
I
+ + + +
- - - -
Modern Physics
VERY LOW TEMPERATURE
2 D SAMPLE
VERY LOW DISORDER
Study the electrons
Not the disorder
SEMICONDUCTOR PHYSICS!
Silicon Technology (i.e., Transistor)
III-V MBE (GaAs)
The surface current density is sx = vxn2Dq, where n2D is the
surface charge density.
RH = 1/n2De.
Rxy = Vy / ix = RH Bz. since sx = ix /Ly & Ey = Vy /Ly.
So, Rxy does NOT depend on the shape of the sample.
The 2D Hall Effect
0
0
2
0 /
x c y x
y c x y
E j j
E j j
ne m
  
  
 
 
  

measurable quantity – Hall resistance
2
y
xy
x D
V B
R
I n e
  
z
D nL
n 
2
for 3D systems
for 2D systems n2D=n
j
E 
 E
j 

in the presence of magnetic field the
resistivity and conductivity tensors become









yy
yx
xy
xx





0 0
0 0
1
1
c
x x y
c
y x y
E j j
E j j
 
 
 
 
 
  
for 2D:










0
0
0
0
1
1









c
c
2
0
0
1
xx
c
xy
m
ne
B
ne

 
 


 
  2
2
2
2
xy
xx
xy
xy
xy
xx
xx
xx













2
0
2
0
)
(
1
)
(
1












c
c
yx
xy
c
yy
xx








1



















yy
yx
xy
xx
yy
yx
xy
xx









x xx xy x
y yx yy y
E j
E j
 
 
    

    
    
0 0
0 0
1
1
x x
c
y y
c
E j
E j
   
   
   
 

   
 

 
   
x xx xy x
y yx yy y
j E
j E
 
 
    

    
    
Results of Hall measurements
A measurement of the two independent components of the resistivity
tensor allows us to determine the density and the mobility (scattering
time) of the electron gas.
VH
VL
B
+ + + +
- - - -
I
2D Hall Effect (Edwin Hall + 100 Years)
B
RH=VH / I
B
RL=VL / I
CLASSICAL PREDICTION
B
RH=VH / I
B
RL=VL / I
Classical Regime
ZERO!
(Dissipationless)
(Data: M. Cage)
Hall
Bar
Shubnikov
deHass
VERY FLAT!
i
R
i
e
R
K
H
/


1
2
2


i = integer
T=1.2K
Accuracy = better than 1 part in 109
Now DEFINES the Ohm
RK=25812.807449 
Nobel prize, 1985
Why Quantization?
Why So Precise?
Why doesn’t X destroy effect?
X = Dirt
= Imperfect Sample Shape
= Imperfect Contacts …. etc
The Integer Quantum Hall Effect
Hall Conductance is quantized in units of e2/h, or
Hall Resistance Rxy = h/ie2, where i is an integer.
The quantum of conductance h/e2
is now known as the "Klitzing“!!
Very important:
For a 2D electron
system only
First observed in 1980 by
Klaus von Klitzing
Awarded 1985 Nobel Prize.
from D.C. Tsui, RMP (1999) and from H.L. Stormer, RMP (1999)
2
0
0
1 *
xx
c
xy
m
ne
B
ne

 
 


 
 
H H
B
R B
ne
   
Hall resistance
strong magnetic fields
quantization of Hall resistance
at integer and fractional
the integer quantum Hall effect
and the fractional quantum Hall effect
2
e
h
xy

 







hc
eH
n

the Drude
model
the classical
Hall effect
1


c
1


c
weak
magnetic
fields
The Fractional Quantum Hall Effect
The Royal Swedish Academy of Sciences awarded The 1998 Nobel
Prize in Physics jointly to Robert B. Laughlin (Stanford), Horst L.
Störmer (Columbia & Bell Labs) & Daniel C. Tsui, (Princeton)
• The researchers were awarded the Nobel Prize for discovering that electrons
acting together in strong magnetic fields can form new types of "particles", with
charges that are fractions of electron charges.
Citation: “For their discovery of a new form of quantum fluid
with fractionally charged excitations”
• Störmer & Tsui made the discovery in 1982 in an experiment using extremely
powerful magnetic fields & low temperatures. Within a year of the discovery
Laughlin had succeeded in explaining their result. His theory showed that
electrons in a powerful magnetic field can condense to form a kind of quantum
fluid related to the quantum fluids that occur in superconductivity & liquid
helium. What makes these fluids particularly important is that events in a drop
of quantum fluid can afford more profound insights into the general inner
structure dynamics of matter. The contributions of the three laureates have thus
led to yet another breakthrough in our understanding of quantum physics & to
the development of new theoretical concepts of significance in many branches
of modern physics.
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Lecture15_Hall_effect.pdf

  • 1. The Hall effect Ref. Ihn Ch. 10
  • 2. Reminder: The Lorentz Force F = q[E + (v  B)]
  • 3. Lorentz Force: Review • Cyclotron Motion FB = mar  qvB = (mv2/r) • Orbit Radius r = [(mv)/(|q|B)] = [p/(q|B|]) • Orbit Frequency ω = 2πf = (|q|B)/m • Orbit Energy K = (½)mv2 = (q2B2R2)/2m • Velocity Filter Undeflected trajectories in crossed E & B fields: v = (E/B) A Momentum Filter!! A Mass Measurement Method!
  • 4. Hall Effect Electrons move in the y direction and an electric field component appears in the y direction, Ey. This will continue until the Lorentz force is equal and opposite to the electric force due to the buildup of electrons – that is, a steady condition arises. B
  • 5. Hall Resistance Rxy (Ohms) The Classical Hall Effect The Lorentz Force tends to deflect jx. However, this sets up an E-field which balances that Lorentz Force. Balance occurs when Ey = vxBz = Vy/Ly. But jx = nevx (or ix = nevxAx). So Rxy = Vy / ix = RH Bz × (Ly/Ax) where RH = 1/ned Ly is the transverse width of the sample Ax is the transverse cross sectional area 0 2 4 6 8 10 200 0 1200 1000 800 600 400 1400 Slope Related to RH & Sample Dimensions Magnetic Field (Tesla) Ax Ly 3d-Hall coefficient d
  • 7. Hall’s Experiment (1879): B Vx Vy I + + + + - - - - B Ryx=Vy / Ix B Rxx=Vx / Ix Roughly Explained by Drude Theory 1900
  • 8. The Drude theory of metals: the free electron theory of metals Paul Drude (1900): theory of electrical and thermal conduction in a metal application of the kinetic theory of gases to a metal, which is considered as a gas of electrons mobile negatively charged electrons are confined in a metal by attraction to immobile positively charged ions isolated atom nucleus charge eZa Z valence electrons are weakly bound to the nucleus (participate in chemical reactions) Za – Z core electrons are tightly bound to the nucleus (play much less of a role in chemical reactions) in a metal – the core electrons remain bound to the nucleus to form the metallic ion the valence electrons wander far away from their parent atoms called conduction electrons or electrons in a metal
  • 9. The basic assumptions of the Drude model 1. between collisions the interaction of a given electron with the other electrons is neglected and with the ions is neglected 2. collisions are instantaneous events Drude considered electron scattering off the impenetrable ion cores the specific mechanism of the electron scattering is not considered below 3. an electron experiences a collision with a probability per unit time 1/τ dt/τ – probability to undergo a collision within small time dt randomly picked electron travels for a time τ before the next collision τ is known as the relaxation time, the collision time, or the mean free time τ is independent of an electron position and velocity 4. after each collision an electron emerges with a velocity that is randomly directed and with a speed appropriate to the local temperature independent electron approximation free electron approximation
  • 10. DC electrical conductivity of a metal V = RI Ohm’s low the Drude model provides an estimate for the resistance introduce characteristics of the metal which are independent on the shape of the wire j=I/A – the current density  – the resistivity R=L/A – the resistance = 1/ the conductivity v is the average electron velocity en   j v e m    E v E j          m ne  2 j E   E j   m ne   2  E j   L A
  • 11. at room temperatures resistivities of metals are typically of the order of microohm centimeters (ohm-cm) and  is typically 10-14 – 10-15 s 2 ne m    mean free path l=v0 v0 – the average electron speed l measures the average distance an electron travels between collisions estimate for v0 at Drude’s time → v0~107 cm/s → l ~ 1 – 10 Å consistent with Drude’s view that collisions are due to electron bumping into ions at low temperatures very long mean free path can be achieved l > 1 cm ~ 108 interatomic spacings! the electrons do not simply bump off the ions! the Drude model can be applied where a precise understanding of the scattering mechanism is not required particular cases: electric conductivity in spatially uniform static magnetic field and in spatially uniform time-dependent electric field Very disordered metals and semiconductors T k mv B 2 3 2 1 2 0 
  • 12. motion under the influence of the force f(t) due to spatially uniform electric and/or magnetic fields equation of motion for the momentum per electron electron collisions introduce a frictional damping term for the momentum per electron ) ( ) ( ) ( t t dt t d f p p     ( ) ( ) t m t  p v average momentum average velocity
  • 13. Hall effect and magnetoresistance Edwin Herbert Hall (1879): discovery of the Hall effect L e B    F v the Lorentz force in equilibrium jy = 0 → the transverse field (the Hall field) Ey due to the accumulated charges balances the Lorentz force quantities of interest: magnetoresistance (transverse magnetoresistance) Hall (off-diagonal) resistance ( ) x xx x y yx x y H x E H j E j E R j B        RH → measurement of the sign of the carrier charge RH is positive for positive charges and negative for negative charges the Hall effect is the electric field developed across two faces of a conductor in the direction j×B when a current j flows across a magnetic field B ( ) x xx x y yx x V R H R I V R I    resistivity Hall resistivity the Hall coefficient
  • 16. Hall Effect x x E m eB E E C y        e v m E v m E e v x C y x C y y 0             e v m E E m e v x x x x     
  • 17. Hall Effect The Hall coefficient is defined as: ne B E m ne E m eB B j E R 1 x 2 x x y H       
  • 18. • Why is the Hall Effect useful? It can determine the carrier type (electron vs. hole) & the carrier density n for a semiconductor. • How? Place the semiconductor into external B field, push current along one axis, & measure the induced Hall voltage VH along the perpendicular axis. n = [(IB)/(qwVH)] Semiconductors: Charge Carrier Density via Hall Effect Hole Electron + charge – charge B F qv B     
  • 19. VL B VH I + + + + - - - - Modern Physics VERY LOW TEMPERATURE 2 D SAMPLE VERY LOW DISORDER Study the electrons Not the disorder SEMICONDUCTOR PHYSICS! Silicon Technology (i.e., Transistor) III-V MBE (GaAs)
  • 20. The surface current density is sx = vxn2Dq, where n2D is the surface charge density. RH = 1/n2De. Rxy = Vy / ix = RH Bz. since sx = ix /Ly & Ey = Vy /Ly. So, Rxy does NOT depend on the shape of the sample. The 2D Hall Effect
  • 21. 0 0 2 0 / x c y x y c x y E j j E j j ne m               measurable quantity – Hall resistance 2 y xy x D V B R I n e    z D nL n  2 for 3D systems for 2D systems n2D=n j E   E j   in the presence of magnetic field the resistivity and conductivity tensors become          yy yx xy xx      0 0 0 0 1 1 c x x y c y x y E j j E j j              for 2D:           0 0 0 0 1 1          c c 2 0 0 1 xx c xy m ne B ne            2 2 2 2 xy xx xy xy xy xx xx xx              2 0 2 0 ) ( 1 ) ( 1             c c yx xy c yy xx         1                    yy yx xy xx yy yx xy xx          x xx xy x y yx yy y E j E j                     0 0 0 0 1 1 x x c y y c E j E j                             x xx xy x y yx yy y j E j E                    
  • 22. Results of Hall measurements A measurement of the two independent components of the resistivity tensor allows us to determine the density and the mobility (scattering time) of the electron gas.
  • 23. VH VL B + + + + - - - - I 2D Hall Effect (Edwin Hall + 100 Years) B RH=VH / I B RL=VL / I CLASSICAL PREDICTION
  • 24. B RH=VH / I B RL=VL / I Classical Regime ZERO! (Dissipationless) (Data: M. Cage) Hall Bar Shubnikov deHass VERY FLAT! i R i e R K H /   1 2 2   i = integer T=1.2K
  • 25. Accuracy = better than 1 part in 109 Now DEFINES the Ohm RK=25812.807449  Nobel prize, 1985 Why Quantization? Why So Precise? Why doesn’t X destroy effect? X = Dirt = Imperfect Sample Shape = Imperfect Contacts …. etc
  • 26. The Integer Quantum Hall Effect Hall Conductance is quantized in units of e2/h, or Hall Resistance Rxy = h/ie2, where i is an integer. The quantum of conductance h/e2 is now known as the "Klitzing“!! Very important: For a 2D electron system only First observed in 1980 by Klaus von Klitzing Awarded 1985 Nobel Prize.
  • 27. from D.C. Tsui, RMP (1999) and from H.L. Stormer, RMP (1999) 2 0 0 1 * xx c xy m ne B ne            H H B R B ne     Hall resistance strong magnetic fields quantization of Hall resistance at integer and fractional the integer quantum Hall effect and the fractional quantum Hall effect 2 e h xy           hc eH n  the Drude model the classical Hall effect 1   c 1   c weak magnetic fields
  • 28. The Fractional Quantum Hall Effect The Royal Swedish Academy of Sciences awarded The 1998 Nobel Prize in Physics jointly to Robert B. Laughlin (Stanford), Horst L. Störmer (Columbia & Bell Labs) & Daniel C. Tsui, (Princeton) • The researchers were awarded the Nobel Prize for discovering that electrons acting together in strong magnetic fields can form new types of "particles", with charges that are fractions of electron charges. Citation: “For their discovery of a new form of quantum fluid with fractionally charged excitations” • Störmer & Tsui made the discovery in 1982 in an experiment using extremely powerful magnetic fields & low temperatures. Within a year of the discovery Laughlin had succeeded in explaining their result. His theory showed that electrons in a powerful magnetic field can condense to form a kind of quantum fluid related to the quantum fluids that occur in superconductivity & liquid helium. What makes these fluids particularly important is that events in a drop of quantum fluid can afford more profound insights into the general inner structure dynamics of matter. The contributions of the three laureates have thus led to yet another breakthrough in our understanding of quantum physics & to the development of new theoretical concepts of significance in many branches of modern physics.