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ELECTRONICS
Fall 2020
Dr. Mona Soliman
Dr.Walid Mohiy
IT Dept.
2
Material Types
Conductors
Insulators
Semiconductors
3
Energy band diagram
4
Atomic structure
Energy Band Diagram
5
Elements Band Digram
6
◼ Atom is stable → Filled or Empty valence shell
1- Gain (or) lose electrons → Ionic compounds
Semiconductor Materials
7
◼ Atom is stable → Filled or Empty valence shell
1-share electrons-→ covalent bonds
Semiconductor Materials
Semiconductor Materials
◼ Intrinsic (pure) semiconductor
Pure silicon is the most commonly used
Pure carbon very expensive
Pure Germanium has poor temperature
stability.
◼ Extrinsic (impure) semiconductor
8
Semiconductors
9
1- Intrinsic Semiconductor
10
Intrinsic Semiconductor
11
◼ No Impurities.
◼ Complete bonds at 0 K.
◼ No charge carriers.
Is it conductor ?!
◼ T > 0 → free electrons
What happen if T>0 k
◼ Si has four valence electrons. Therefore, it can
form covalent bonds with four of its nearest
neighbors.
◼ When temperature goes up, electrons can
become free to move about the Si lattice.
12
13
Electron-hole pair generation
There are 2 types of mobile charge carriers in Si:
Conduction electrons are negatively charged;
Holes are positively charged.
Charge Carriers
◼ Excited electron = Free electron = Conduction
electron:
Electron from valence band to conduction
band.
◼ Negative electrons (n)…. ” Conduction band: Ec”
◼ Positive holes (p)------” Valence band: Ev ”
◼ Bandgap energy: ----”No carriers”
Eg = (Ec – Ev)
15
Charge Carriers
Carrier generation process
◼ Carrier generation describes
processes by which electrons gain
energy and move from the valence
band to the conduction band,
producing two mobile carriers;
16
◼ Recombination describes
processes by which a conduction
band electron loses energy and
re-occupies the energy state of an
electron hole in the valence band.
◼ The electron–hole pair is the
fundamental unit of generation
and recombination
17
Charge Carriers
Carrier recombination process
Charge Carriers
◼ For the intrinsic
material, since
electrons and
holes are always
created in pairs, n
= p = ni where ni is
the symbol for
”intrinsic carrier
concentration.”
◼ To quantify electron
concentration (n) we count
number of electrons in the
conduction band per unit
volume /cm3
◼ To quantify hole
concentration (p) we count
number of holes in the
valance band per unit
volume /cm3
18
19
◼ Doping process
 Adding impurities to intrinsic semiconductor
 To increase number of electrons (negative doping)
 To increase number of holes (positive doping)
◼ n-type semiconductor
◼ p-type semiconductor
Extrinsic (Impure) Semiconductors
Extrinsic (Impure) Semiconductors
21
◼ Negative doping process (n-type)
 Adding pentavelent material → Donors
◼ Five valence electrons
 Arsenic (AS), and Phosphorus (P).
◼ Positive doping process (p-type)
 Adding trivalent material → Acceptors
◼ Three valence electrons
 Boron (B), Aluminum (Al), and Gallium (Ga).
Extrinsic (Impure) Semiconductors
n-type semiconductors
What happen when adding pentavalent
atoms to intrinsic semiconductor?
22
n-type semiconductors
What happen when adding pentavalent
atoms to intrinsic semiconductor?
▪ As atom has five valance
electron.
▪ Four electron form a covalent
bound with four silicon
▪ Fifth electron has no chance to
form such a bound (Free electron)
▪ Each As atom donate one
electron to conduction band of Si
atom leaving a positive charged
atom behind (ionization)
23
All donor atoms included in the crystal will give an electron to conduction band
𝒏𝟎 ≅ 𝑵𝑫
Example : 1 mg of As atom will have 8x1014 atom
1 e- 8x1014 free electron
24
n-type semiconductors
What happen when adding pentavalent
atoms to intrinsic semiconductor?
+5
-
-
+4
+4 +4
- -
-
-
+4
- -
+4
- -
+4
-
-
+4
-
-
+4
-
-
- -
- -
-
-
- -
-
-
-
-
-
-
-
-
-
-
-
-
CB
VB
x
EG
E
EC
EV
ED
not in valence band !
ED donor energy level
As a result of pentavalent impurity there will always be more free electrons
in the conduction band than holes in the valence band
Majority carriers : electrons
Minority carriers : holes
n-type semiconductors
Energy Band Diagram
25
◼ ni: intrinsic carrier
concentration
◼ ND: Donor concentration
◼ n: electron concentration
◼ p: hole concentration
◼ n-type
26
◼ Intrinsic semi-conductor
n = p = ni
n-type semiconductors
Carrier concentration (Low of mass action)
p-type semiconductors
What happen when adding trivalent atoms to
intrinsic semiconductor?
27
p-type semiconductors
What happen when adding triavalent atoms
to intrinsic semiconductor?
▪ As atom has three valance
electron.
▪ three electron form a covalent
bound with three silicon
▪ It need one more electron to be
stable
▪ Each atom accept one electron
from Si atom creating a negative
charged atom behind (ionization)
28
All acceptor atoms included in the crystal will accept an electron (adding hole in
valance band) 𝒑𝟎 ≅ 𝑵𝑨
29
p-type semiconductors
What happen when adding trivalent atoms to
intrinsic semiconductor?
p-type semiconductors
+3
-
+4
+4 +4
- -
-
-
+4
- -
+4
- -
+4
-
-
+4
-
-
+4
-
-
- -
- -
-
-
- -
-
-
-
-
-
-
-
-
-
-
-
-
CB
VB
E
x
EG
EC
EV
EA
EA acceptor energy level
◼ ni: intrinsic carrier
concentration
◼ NA: Accaptor
concentration
◼ n: electron concentration
◼ p: hole concentration
◼ p-type
31
◼ Intrinsic semi-conductor
n = p = ni
p-type semiconductors
Carrier concentration (Low of mass action)
Carriers transfer
32
There are two distinctly different mechanisms
for the movement of charge carriers and hence
for current flow in semiconductors: drift and
diffusion.
Currents
Drift
Diffusion
Carriers transfer
Drift current
❑Due to electric field (E) applied.
33
Holes are accelerated in the direction of E,
and free electrons are accelerated in the
direction opposite to that of E.
Carriers transfer
Drift current
◼ The flow of charge carriers,
which is due to the applied
voltage or electric field is called
drift current.
◼ In a semiconductor, there are
two types of charge carriers,
(electrons and holes)
◼ When the voltage is applied to a
semiconductor, the free
electrons move towards the
positive terminal of a battery and
holes move towards the
negative terminal of a battery. 34
Carriers transfer
◼ Drift current
 Due to electric field (E) applied.
 Drift velocity
 µp hole mobility & µn electron mobility
◼ Vn is the drift velocity representing the carrier concentration of electrons.
◼ µn is the mobility of the particular electrons and
◼ E represents the electric field applied to the n-type of the semiconductor
 Mobility measures how easily electronsholes moves in response to the
applied electrical field 35
E
v p
p 
= E
v n
n 
−
=
Drift current density
n
n v
n
q
J −
= p
p v
p
q
J =
E
n
n μ
v −
= E
p
p μ
v =
E
n
μ
n
q
= E
p
μ
p
q
=
( )E
p
n
p
n μ
p
nμ
q
J
J
J +
=
+
=
36
q = 1.6X10-19 coulomb
µn is the mobility of electrons its units are cm2/ Vs
µp is the mobility of holes and its units are cm2/ Vs
E is the electric field applied on it and it is measured in terms of V/ cm
Conductivity of Semiconductor
( )
p
n μ
p
nμ
q
σ +
=
σ
ρ
1
=
E

=
J
( )E
p
n μ
p
nμ
q
J +
=
Ohm’s law:
( ) ( )
p
A
n
D
p
n μ
N
μ
N
q
μ
p
nμ
q +

+
=
1
1

resistivity of silicon
37
◼ Carrier diffusion occurs when the density of charge
carriers in a piece of semiconductor is not uniform.
◼ Carrier will diffuse from the region of high
concentration to the region of low concentration.
◼ The diffusion of charge carriers gives rise to a net
flow of charge, or diffusion current.
◼ If uniform concentrations of (n & P) → no current.
38
Carriers transfer
Diffusion current
39
Carriers transfer
Diffusion current
Diffusion current and drift
current
40

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Lec 12.pdf

  • 1. ELECTRONICS Fall 2020 Dr. Mona Soliman Dr.Walid Mohiy IT Dept.
  • 3. 3
  • 4. Energy band diagram 4 Atomic structure Energy Band Diagram
  • 6. 6 ◼ Atom is stable → Filled or Empty valence shell 1- Gain (or) lose electrons → Ionic compounds Semiconductor Materials
  • 7. 7 ◼ Atom is stable → Filled or Empty valence shell 1-share electrons-→ covalent bonds Semiconductor Materials
  • 8. Semiconductor Materials ◼ Intrinsic (pure) semiconductor Pure silicon is the most commonly used Pure carbon very expensive Pure Germanium has poor temperature stability. ◼ Extrinsic (impure) semiconductor 8
  • 11. Intrinsic Semiconductor 11 ◼ No Impurities. ◼ Complete bonds at 0 K. ◼ No charge carriers. Is it conductor ?! ◼ T > 0 → free electrons
  • 12. What happen if T>0 k ◼ Si has four valence electrons. Therefore, it can form covalent bonds with four of its nearest neighbors. ◼ When temperature goes up, electrons can become free to move about the Si lattice. 12
  • 14. There are 2 types of mobile charge carriers in Si: Conduction electrons are negatively charged; Holes are positively charged.
  • 15. Charge Carriers ◼ Excited electron = Free electron = Conduction electron: Electron from valence band to conduction band. ◼ Negative electrons (n)…. ” Conduction band: Ec” ◼ Positive holes (p)------” Valence band: Ev ” ◼ Bandgap energy: ----”No carriers” Eg = (Ec – Ev) 15
  • 16. Charge Carriers Carrier generation process ◼ Carrier generation describes processes by which electrons gain energy and move from the valence band to the conduction band, producing two mobile carriers; 16
  • 17. ◼ Recombination describes processes by which a conduction band electron loses energy and re-occupies the energy state of an electron hole in the valence band. ◼ The electron–hole pair is the fundamental unit of generation and recombination 17 Charge Carriers Carrier recombination process
  • 18. Charge Carriers ◼ For the intrinsic material, since electrons and holes are always created in pairs, n = p = ni where ni is the symbol for ”intrinsic carrier concentration.” ◼ To quantify electron concentration (n) we count number of electrons in the conduction band per unit volume /cm3 ◼ To quantify hole concentration (p) we count number of holes in the valance band per unit volume /cm3 18
  • 19. 19 ◼ Doping process  Adding impurities to intrinsic semiconductor  To increase number of electrons (negative doping)  To increase number of holes (positive doping) ◼ n-type semiconductor ◼ p-type semiconductor Extrinsic (Impure) Semiconductors
  • 21. 21 ◼ Negative doping process (n-type)  Adding pentavelent material → Donors ◼ Five valence electrons  Arsenic (AS), and Phosphorus (P). ◼ Positive doping process (p-type)  Adding trivalent material → Acceptors ◼ Three valence electrons  Boron (B), Aluminum (Al), and Gallium (Ga). Extrinsic (Impure) Semiconductors
  • 22. n-type semiconductors What happen when adding pentavalent atoms to intrinsic semiconductor? 22
  • 23. n-type semiconductors What happen when adding pentavalent atoms to intrinsic semiconductor? ▪ As atom has five valance electron. ▪ Four electron form a covalent bound with four silicon ▪ Fifth electron has no chance to form such a bound (Free electron) ▪ Each As atom donate one electron to conduction band of Si atom leaving a positive charged atom behind (ionization) 23
  • 24. All donor atoms included in the crystal will give an electron to conduction band 𝒏𝟎 ≅ 𝑵𝑫 Example : 1 mg of As atom will have 8x1014 atom 1 e- 8x1014 free electron 24 n-type semiconductors What happen when adding pentavalent atoms to intrinsic semiconductor?
  • 25. +5 - - +4 +4 +4 - - - - +4 - - +4 - - +4 - - +4 - - +4 - - - - - - - - - - - - - - - - - - - - - - CB VB x EG E EC EV ED not in valence band ! ED donor energy level As a result of pentavalent impurity there will always be more free electrons in the conduction band than holes in the valence band Majority carriers : electrons Minority carriers : holes n-type semiconductors Energy Band Diagram 25
  • 26. ◼ ni: intrinsic carrier concentration ◼ ND: Donor concentration ◼ n: electron concentration ◼ p: hole concentration ◼ n-type 26 ◼ Intrinsic semi-conductor n = p = ni n-type semiconductors Carrier concentration (Low of mass action)
  • 27. p-type semiconductors What happen when adding trivalent atoms to intrinsic semiconductor? 27
  • 28. p-type semiconductors What happen when adding triavalent atoms to intrinsic semiconductor? ▪ As atom has three valance electron. ▪ three electron form a covalent bound with three silicon ▪ It need one more electron to be stable ▪ Each atom accept one electron from Si atom creating a negative charged atom behind (ionization) 28
  • 29. All acceptor atoms included in the crystal will accept an electron (adding hole in valance band) 𝒑𝟎 ≅ 𝑵𝑨 29 p-type semiconductors What happen when adding trivalent atoms to intrinsic semiconductor?
  • 30. p-type semiconductors +3 - +4 +4 +4 - - - - +4 - - +4 - - +4 - - +4 - - +4 - - - - - - - - - - - - - - - - - - - - - - CB VB E x EG EC EV EA EA acceptor energy level
  • 31. ◼ ni: intrinsic carrier concentration ◼ NA: Accaptor concentration ◼ n: electron concentration ◼ p: hole concentration ◼ p-type 31 ◼ Intrinsic semi-conductor n = p = ni p-type semiconductors Carrier concentration (Low of mass action)
  • 32. Carriers transfer 32 There are two distinctly different mechanisms for the movement of charge carriers and hence for current flow in semiconductors: drift and diffusion. Currents Drift Diffusion
  • 33. Carriers transfer Drift current ❑Due to electric field (E) applied. 33 Holes are accelerated in the direction of E, and free electrons are accelerated in the direction opposite to that of E.
  • 34. Carriers transfer Drift current ◼ The flow of charge carriers, which is due to the applied voltage or electric field is called drift current. ◼ In a semiconductor, there are two types of charge carriers, (electrons and holes) ◼ When the voltage is applied to a semiconductor, the free electrons move towards the positive terminal of a battery and holes move towards the negative terminal of a battery. 34
  • 35. Carriers transfer ◼ Drift current  Due to electric field (E) applied.  Drift velocity  µp hole mobility & µn electron mobility ◼ Vn is the drift velocity representing the carrier concentration of electrons. ◼ µn is the mobility of the particular electrons and ◼ E represents the electric field applied to the n-type of the semiconductor  Mobility measures how easily electronsholes moves in response to the applied electrical field 35 E v p p  = E v n n  − =
  • 36. Drift current density n n v n q J − = p p v p q J = E n n μ v − = E p p μ v = E n μ n q = E p μ p q = ( )E p n p n μ p nμ q J J J + = + = 36 q = 1.6X10-19 coulomb µn is the mobility of electrons its units are cm2/ Vs µp is the mobility of holes and its units are cm2/ Vs E is the electric field applied on it and it is measured in terms of V/ cm
  • 37. Conductivity of Semiconductor ( ) p n μ p nμ q σ + = σ ρ 1 = E  = J ( )E p n μ p nμ q J + = Ohm’s law: ( ) ( ) p A n D p n μ N μ N q μ p nμ q +  + = 1 1  resistivity of silicon 37
  • 38. ◼ Carrier diffusion occurs when the density of charge carriers in a piece of semiconductor is not uniform. ◼ Carrier will diffuse from the region of high concentration to the region of low concentration. ◼ The diffusion of charge carriers gives rise to a net flow of charge, or diffusion current. ◼ If uniform concentrations of (n & P) → no current. 38 Carriers transfer Diffusion current
  • 40. Diffusion current and drift current 40