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Introduction to Intel 10nm Process Technology
Intel's Technology and Manufacturing Day 2017 presentation highlights the advanced features and capabilities of its 10nm process technology, which offers the world's tightest transistor and metal pitches, achieving a performance advantage over competing technologies. This generation of 10nm technology includes enhancements for improved power and performance while continuing the economic benefits associated with Moore's Law through hyper scaling. Despite the quiet period before quarterly financial results, Intel presents forward-looking statements and anticipates manufacturing to begin in the second half of 2017.
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Introduction to Intel 10nm Process Technology
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- 2. TECHNOLOGY AND MANUFACTURINGDAY 10nmtechnology leadershipKAIZAD MISTRY Corporate Vice President, Technology and Manufacturing Group Co-Director, Logic Technology Development
- 3. TECHNOLOGY AND MANUFACTURINGDAY Intel Technology and Manufacturing Day 2017 occurs during Intel’s “Quiet Period,” before Intel announces its 2017 first quarter financial and operating results. Therefore, presenters will not be addressing first quarter information during this year’s program. Statements in this presentation that refer to forecasts, future plans and expectations are forward-looking statements that involve a number of risks and uncertainties. Words such as “anticipates,” “expects,” “intends,” “goals,” “plans,” “believes,” “seeks,” “estimates,” “continues,” “may,” “will,” “would,” “should,” “could,” and variations of such words and similar expressions are intended to identify such forward-looking statements. Statements that refer to or are based on projections, uncertain events or assumptions also identify forward-looking statements. Such statements are based on management’s expectations as of March 28, 2017, and involve many risks and uncertainties that could cause actual results to differ materially from those expressed or implied in these forward-looking statements. Important factors that could cause actual results to differ materially from the company’s expectations are set forth in Intel’s earnings release dated January 26, 2017, which is included as an exhibit to Intel’s Form 8-K furnished to the SEC on such date. Additional information regarding these and other factors that could affect Intel’s results is included in Intel’s SEC filings, including the company’s most recent reports on Forms 10-K, 10-Q and 8-K reports may be obtained by visiting our Investor Relations website at www.intc.com or the SEC’s website at www.sec.gov. Disclosures
- 4. TECHNOLOGY AND MANUFACTURINGDAY Intel’s 10 nm process technology has the world’s tightest transistor & metal pitches along with hyper scaling features for leadership density Intel’s 10 nm technology is a full generation ahead of other “10 nm” technologies Enhanced versions of Intel 10 nm provide improved power/performance within the 10 nm process family Hyper scaling extracts the full value of multi-patterning schemes and allows Intel to continue the benefits of Moore’s Law economics Keymessages Source: Amalgamation of analyst data and Intel analysis, based upon current expectations and available information.
- 5. TECHNOLOGY AND MANUFACTURINGDAY Intel 10 nm Features Intel 10 nm Hyper Scaling Enhanced Versions of Intel 10 nm Hyper Scaling Redux AGENDA
- 6. TECHNOLOGY AND MANUFACTURINGDAY 10nmHyperScaling 10 nm features aggressive pitch scaling - world’s first Self-Aligned Quad Patterning Fin Pitch Min Metal Pitch Cell Height Gate Pitch 42 nm 34 nm 52 nm 36 nm 399 nm 272 nm 70 nm 54 nm .81x .69x .68x .78x 14 nm 10 nm 14 nm 10 nm 14 nm 10 nm 14 nm 10 nm Source: Intel
- 7. TECHNOLOGY AND MANUFACTURINGDAY 10nmHyperScaling 10 nm aggressive scaling & new features deliver 2.7x transistor density improvement Fin Pitch Min Metal Pitch Cell Height Gate Pitch Dummy Gate Gate Contact 42 nm 34 nm 52 nm 36 nm 399 nm 272 nm 70 nm 54 nm Double Single Std COAG .81x .69x .68x .78x 14 nm 10 nm 14 nm 10 nm 14 nm 10 nm 14 nm 10 nm 14 nm 10 nm 14 nm 10 nm Contact Contact Source: Intel
- 8. TECHNOLOGY AND MANUFACTURINGDAY 1 10 100 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 Transistor Density MTr / mm2 HVM Wafer Start Date Intel 45nm 22nm 14nm 10nm 32nm 100.8 3.3 7.5 15.3 37.5 MTr / mm2 LogicTransistordensity Intel 10 nm hyper scaling features result in Transistor Density above 100MTr/mm2 Source: Intel. 2017-2020 are estimates based upon current expectations and available information.
- 9. TECHNOLOGY AND MANUFACTURINGDAY 10nm 3rd GenerationFinFETs 14nm 22nm 10 nm Fins are ~25% taller and ~25% more closely spaced than 14 nm
- 10. TECHNOLOGY AND MANUFACTURINGDAY 10nm 3rd GenerationFinFETs 14nm 22nm Intel’s 10 nm technology features a Fin Pitch of 34 nm, Fin Height of 53 nm 53 nm 34 nm
- 11. TECHNOLOGY AND MANUFACTURINGDAY 0 20 40 60 80 100 120 140 160 180 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 Transistor Gate Pitch (nm) HVM Wafer Start Date Intel 45nm 22nm 14nm 10nm 32nm Intel’s 10 nm technology features 54 nm gate pitch Transistorgatepitchscaling Source: Intel. 2017-2020 are estimates based upon current expectations and available information.
- 12. TECHNOLOGY AND MANUFACTURINGDAY 0 20 40 60 80 100 120 140 160 180 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 Transistor Gate Pitch (nm) HVM Wafer Start Date Intel 45nm 22nm 14nm 10nm 32nm 45/40nm 14/16nm 28/32nm 28nm Others (measured) 20nm 10nm (est.) Intel 10 nm Gate Pitch is the tightest in the industry Transistorgatepitchtrend Source: Amalgamation of analyst data and Intel analysis. 2017-2020 are estimates based upon current expectations and available information.
- 13. TECHNOLOGY AND MANUFACTURINGDAY 10 100 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 Interconnect Pitch (nm) HVM Wafer Start Date Intel 45nm 22nm 14nm 10nm 32nm Intel 10 nm technology features a minimum metal pitch of 36 nm World’s first Self-Aligned Quad Patterning Metalpitchscaling 36 nm Pitch Source: Intel. 2017-2020 are estimates based upon current expectations and available information.
- 14. TECHNOLOGY AND MANUFACTURINGDAY 10 100 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 Interconnect Pitch (nm) HVM Wafer Start Date Intel 45nm 22nm 14nm 10nm 32nm 45/40nm 14/16nm 28/32nm 28nm Others (measured) 20nm 10nm (est.) Intel 10 nm technology has the tightest minimum metal pitch in the industry MetalpitchSCALINGtrend 36 nm Pitch Source: Intel. 2017-2020 are estimates based upon current expectations and available information.
- 15. TECHNOLOGY AND MANUFACTURINGDAY Contact over active gate is a revolutionary feature for another ~10% area scaling Transistor Contact ContactOverActivegate Transistor Fins Contact
- 16. TECHNOLOGY AND MANUFACTURINGDAY SingledummyGate 14 nm 10 nm Single Dummy Gate Active Gate Active Gate Dummy Gate Process innovations enable denser single dummy gate at cell borders
- 17. TECHNOLOGY AND MANUFACTURINGDAY Singledummygate 2-Input NAND Cell Complex Scan Flip-Flop Logic Cell Cell Width Cell Width Single dummy gate at cell borders provides ~20% effective area scaling benefit
- 18. TECHNOLOGY AND MANUFACTURINGDAY Intel 10 nm Features Intel 10 nm Hyper Scaling Enhanced Versions of Intel 10 nm Hyper Scaling Redux AGENDA
- 19. TECHNOLOGY AND MANUFACTURINGDAY Fin pitch and metal pitch scaling allow cell height to scale 0.68x from 14 nm 14 nm 399nm Height 10 nm 272nm Height (0.68x) Cell Height Gate Pitch Gate Pitch Cell Height LibraryHeightScaling Source: Intel
- 20. TECHNOLOGY AND MANUFACTURINGDAY Intel10nmLogicDensityscaling Cell height and gate pitch scaling provides traditional area reduction of ~0.5x 0.0 0.2 0.4 0.6 0.8 1.0 Cell Height Gate Pitch COAG Single DG Traditional Scaling Source: Intel
- 21. TECHNOLOGY AND MANUFACTURINGDAY Intel10nmLogicDensityscaling Intel 10 nm hyper scaling features further improve area scaling to 0.37x 0.0 0.2 0.4 0.6 0.8 1.0 Cell Height Gate Pitch COAG Single DG Traditional Scaling Hyper Scaling Features Source: Intel
- 22. TECHNOLOGY AND MANUFACTURINGDAY 0.01 0.1 1 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 Logic Area (relative) HVM Wafer Start Date 45nm 22nm 14nm 32nm .37x .49x .45x 10nm .37x Logicareascaling 10 nm hyper scaling features provides better-than-normal 0.37x logic area scaling Source: Intel. 2017-2020 are estimates based upon current expectations and available information.
- 23. TECHNOLOGY AND MANUFACTURINGDAY 1 10 100 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 Transistor Density MTr / mm2 HVM Wafer Start Date Intel 45nm 22nm 14nm 10nm 32nm 2.7x 2.5x 2.1x 2.3x LogicTransistordensity Intel 10 nm hyper scaling features provide ~2.7x transistor density improvement Source: Intel. 2017-2020 are estimates based upon current expectations and available information.
- 24. TECHNOLOGY AND MANUFACTURINGDAY 1 10 100 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 Transistor Density MTr / mm2 HVM Wafer Start Date Intel 45nm 22nm 14nm 10nm 32nm LogicTransistordensity Hyper scaling maintains the rate of Moore’s Law density scaling Source: Intel. 2017-2020 are estimates based upon current expectations and available information.
- 25. TECHNOLOGY AND MANUFACTURINGDAY 1 10 100 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 Transistor Density MTr / mm2 HVM Wafer Start Date Intel 45nm 22nm 14nm 10nm 32nm 45/40nm 14/16nm 28/32nm 28nm Others (measured) 20nm 10nm (est.) ~2x LogicTransistordensity Intel 10 nm is a full generation ahead of other “10 nm” technologies Source: Amalgamation of analyst data and Intel analysis. 2017-2020 are estimates based upon current expectations and available information.
- 26. TECHNOLOGY AND MANUFACTURINGDAY 0.01 0.1 45nm 32nm 22nm 14nm 10nm 7nm SRAM Cell Area (um2) HP .0441 LV .0367 HD .0312 um2 10 nm offers a range of SRAM cells for density and power/performance SRAM cell area scaled ~0.6x from 14 nm SRAMAREASCALING Source: Intel
- 27. TECHNOLOGY AND MANUFACTURINGDAY Microprocessordieareascaling Hyper scaling delivers better microprocessor die area scaling than the normal trend 100 mm2 45 nm 32 nm 22 nm 14 nm 10 nm 62 mm2 17.7 mm2 7.6 mm2 0.62x Logic SRAM IO 100 mm2 Logic SRAM IO 100 mm2 Logic SRAM IO 100 mm2 Logic SRAM IO 100 mm2 Logic SRAM IO 0.43x 0.46x 0.62x Area 38.4 mm2 Source: Intel
- 28. TECHNOLOGY AND MANUFACTURINGDAY Intel 10 nm Features Intel 10 nm Hyper Scaling Enhanced Versions of Intel 10 nm Hyper Scaling Redux AGENDA
- 29. TECHNOLOGY AND MANUFACTURINGDAY 2007 2009 2011 2013 2015 2017 2019 2021 TransistorPerformance (logscale) Process Readiness Date 45nm 22nm 14nm 10nm 32nm 10++ 10+ Higher Performance 14++ 14+ 2007 2009 2011 2013 2015 2017 2019 2021 DynamicCapacitance (logscale) Process Readiness Date 45nm 22nm 14nm 10nm 32nm 10+ 10++Lower Power 14+ 14++ Technologyenhancements 10 nm enhancements improve performance and extend technology life Source: Intel. 2017-2021 are estimates based upon current expectations and available information.
- 30. TECHNOLOGY AND MANUFACTURINGDAY 10 nm technology continues trend of power/performance improvements Technologyenhancements 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.4 0.6 0.8 1.0 1.2 ActivePower(norm/fin) Performance (norm) 14nm 10nm matched leakage/fin@0.7V 25% 0.55x Source: Intel estimates based upon current expectations and available information.
- 31. TECHNOLOGY AND MANUFACTURINGDAY 10++ enhancements offer improved power/performance within 10 nm generation Technologyenhancements 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.4 0.6 0.8 1.0 1.2 ActivePower(norm/fin) Performance (norm) 14nm 10nm 10++ matched leakage/fin@0.7V 15% 0.7x 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.4 0.6 0.8 1.0 1.2 ActivePower(norm/fin) Performance (norm) 14nm 10nm matched leakage/fin@0.7V 0.55x 25% Source: Intel estimates based upon current expectations and available information.
- 32. TECHNOLOGY AND MANUFACTURINGDAY Intel’s 10 nm technology family has features for a broad range of products Technologyenhancements Low Cost Dense High Perf High Voltage FinFETs High Q Inductors High Res Substrates Precision Resistors Interconnect Options Source: Intel
- 33. TECHNOLOGY AND MANUFACTURINGDAY Intel 10 nm Features Intel 10 nm Hyper Scaling Enhanced Versions of Intel 10 nm Hyper Scaling Redux AGENDA
- 34. TECHNOLOGY AND MANUFACTURINGDAY Hyper scaling allows Intel to continue the economics of Moore’s Law More than 2X logic transistor density increase but with longer than 2 year cadence Same rate of transistor density increase as traditional Moore’s Law scaling Same rate of Cost per Transistor improvement as traditional Moore’s Law scaling Power/performance enhancements within each process node Why hyper scaling? Multi-pass patterning adds to the cost of lithography Hyper scaling extracts the full cost per transistor benefit of advanced patterning schemes Hyper scaling would not be possible without Self-Aligned Dual and Self-Aligned Quad Patterning along with other 10 nm hyper scaling innovations Hyperscaling
- 35. TECHNOLOGY AND MANUFACTURINGDAY 45nm 32nm 22nm 14nm 10nm 7nm $ / mm2 (normalized) 45nm 32nm 22nm 14nm 10nm 7nm $ / Transistor (normalized) x = 45nm 32nm 22nm 14nm 10nm 7nm mm2 / Transistor (normalized) LogScale LogScale LogScale Costpertransistor Hyper scaling allows the economics of Moore’s Law to continue Source: Intel estimates based upon current expectations and available information.
- 36. TECHNOLOGY AND MANUFACTURINGDAY Intel’s 10 nm process technology has the world’s tightest transistor & metal pitches along with hyper scaling features for leadership density Intel’s 10 nm technology is a full generation ahead of other “10 nm” technologies Enhanced versions of Intel 10 nm provide improved power/performance within the 10 nm process family Intel’s 10nm process technology is on track to commence manufacturing in 2H’17 Hyper scaling extracts the full value of multi-patterning schemes and allows Intel to continue the economic benefits of Moore’s Law CONCLUSIONS Source: Amalgamation of analyst data and Intel analysis, based upon current expectations and available information.
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