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From dilute to condensed magnetic semiconductors:
     a protocol for systematic characterization

                                         Mauro Rovezzi1

  1
      Institute for Semiconductors and Solid State Physics, Johannes Kepler University, Linz, Austria




                      [W. Stefanowicz et al., arXiv.org 0912.4216 (2010)]
                 [A. Navarro-Quezada et al., Phys. Rev. B 81, 205206 (2010)]
  M. Rovezzi (HFP/JKU)                    DMS & CMS characterization      DEMATEN 2nd workshop (June 2010)   1 / 32
Co-authors

   A. Navarro-Quezada, B. Faina, T. Devillers, T. Li, A. rois, T. Winkler,
   A. Bonanni
   Institute for Semiconductors and Solid State Physics, Johannes Kepler
   University, Linz, Austria

   W. Stefanowicz, D. Sztenkiel, R. Jakiela, M. Sawicki, T. Dietl
   Institute of Physics, Polish Academy of Sciences, Warsaw, Poland

   R. T. Lechner, G. Bauer
   Institute for Semiconductors and Solid State Physics, Johannes Kepler
   University, Linz, Austria

   F. d’Acapito
   Italian National Research Council, IOM-OGG, c/o ESRF GILDA,
   Grenoble, France


    M. Rovezzi (HFP/JKU)      DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   2 / 32
Outline


1   Introduction


2   Growth          characterization protocol


3   Case studies
      Dilute (Ga,Mn)N
      Fe segregation in GaN


4   Conclusions




      M. Rovezzi (HFP/JKU)           DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   3 / 32
Introduction
Building-blocks for Spintronics devices




                                                     [A. Bonanni and T. Dietl, Chem. Soc. Rev. (2010)]
       M. Rovezzi (HFP/JKU)               DMS & CMS characterization     DEMATEN 2nd workshop (June 2010)   4 / 32
DMS → (Ga,Mn)N
  With holes → sp-d Zener model




       x=5% and 3.5×1020 h/cm3
     [T. Dietl et al., Science (2000)]


 Controversial experimental reports ⇒ accurate nanoscale characterization


    M. Rovezzi (HFP/JKU)                 DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   5 / 32
DMS → (Ga,Mn)N
  With holes → sp-d Zener model                            Without holes → double exchange




                                                                [K. Sato et al., Phys. Rev. B (2004)]
       x=5% and 3.5×1020 h/cm3
     [T. Dietl et al., Science (2000)]                     [L. Berqvist et al., Phys. Rev. Lett. (2004)]


 Controversial experimental reports ⇒ accurate nanoscale characterization


    M. Rovezzi (HFP/JKU)                 DMS & CMS characterization         DEMATEN 2nd workshop (June 2010)   5 / 32
DMS → (Ga,Mn)N
  With holes → sp-d Zener model                            Without holes → double exchange




                                                                [K. Sato et al., Phys. Rev. B (2004)]
       x=5% and 3.5×1020 h/cm3
     [T. Dietl et al., Science (2000)]                     [L. Berqvist et al., Phys. Rev. Lett. (2004)]


 Controversial experimental reports ⇒ accurate nanoscale characterization


    M. Rovezzi (HFP/JKU)                 DMS & CMS characterization         DEMATEN 2nd workshop (June 2010)   5 / 32
CMS → (Ga,Fe)N
TMs solubility in (most) semiconductors at thermal equilibrium is low
  ⇒ chemical/crystallographic phase separation
     ⇒ a priori unknown magnetic properties ⇒ mostly high TC FM




  Detection and control of phase separation ⇒ nano-characterization tools
     M. Rovezzi (HFP/JKU)      DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   6 / 32
CMS → (Ga,Fe)N
TMs solubility in (most) semiconductors at thermal equilibrium is low
  ⇒ chemical/crystallographic phase separation
     ⇒ a priori unknown magnetic properties ⇒ mostly high TC FM
Examples of chemical phase separation (spinodal decomposition in DMS literature)
  (Ga,Mn)As annealing




[M. Moreno et al., J. Appl.
     Phys. (2002)]


   Detection and control of phase separation ⇒ nano-characterization tools
       M. Rovezzi (HFP/JKU)      DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   6 / 32
CMS → (Ga,Fe)N
TMs solubility in (most) semiconductors at thermal equilibrium is low
  ⇒ chemical/crystallographic phase separation
     ⇒ a priori unknown magnetic properties ⇒ mostly high TC FM
Examples of chemical phase separation (spinodal decomposition in DMS literature)
  (Ga,Mn)As annealing               (Ga,Mn)N clusters




                              [G. Martinez-Criado et al., Appl.
                                    Phys. Lett. (2005)]
[M. Moreno et al., J. Appl.
     Phys. (2002)]


   Detection and control of phase separation ⇒ nano-characterization tools
       M. Rovezzi (HFP/JKU)             DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   6 / 32
CMS → (Ga,Fe)N
TMs solubility in (most) semiconductors at thermal equilibrium is low
  ⇒ chemical/crystallographic phase separation
     ⇒ a priori unknown magnetic properties ⇒ mostly high TC FM
Examples of chemical phase separation (spinodal decomposition in DMS literature)
  (Ga,Mn)As annealing               (Ga,Mn)N clusters                   (Ge,Mn) nano-columns




                              [G. Martinez-Criado et al., Appl.
                                    Phys. Lett. (2005)]
[M. Moreno et al., J. Appl.                                          [M. Jamet et al., Nature Mat.
     Phys. (2002)]                                                             (2006)]


   Detection and control of phase separation ⇒ nano-characterization tools
       M. Rovezzi (HFP/JKU)             DMS & CMS characterization    DEMATEN 2nd workshop (June 2010)   6 / 32
CMS → (Ga,Fe)N
TMs solubility in (most) semiconductors at thermal equilibrium is low
  ⇒ chemical/crystallographic phase separation
     ⇒ a priori unknown magnetic properties ⇒ mostly high TC FM
Examples of chemical phase separation (spinodal decomposition in DMS literature)
  (Ga,Mn)As annealing               (Ga,Mn)N clusters                   (Ge,Mn) nano-columns




                              [G. Martinez-Criado et al., Appl.
                                    Phys. Lett. (2005)]
[M. Moreno et al., J. Appl.                                          [M. Jamet et al., Nature Mat.
     Phys. (2002)]                                                             (2006)]


   Detection and control of phase separation ⇒ nano-characterization tools
       M. Rovezzi (HFP/JKU)             DMS & CMS characterization    DEMATEN 2nd workshop (June 2010)   6 / 32
Growth             characterization protocol




   M. Rovezzi (HFP/JKU)       DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   7 / 32
Metalorganic Vapour Phase Epitaxy
(Ga,Mn)N and (Ga,Fe)N[:Si]



                               AIXTRON 200RF horizontal reactor
                               c-plane sapphire substrates
                               Precursors: TMGa, NH3 , Cp2 Fe, Cp2 Mn, SiH4
                               Monitoring: ellipsometry


Well established growth procedure
  1   Substrate nitridation
  2   LT (540 ◦ C) GaN nucl. layer
  3   Annealing/recrystallization
  4   1 µm HT (1050 ◦ C) GaN
  5   0.5 – 1 µm GaN:(Fe/Mn)[:Si]
            800 – 950 ◦ C
            50 – 490 sccm (→ 0.05 – 1 %)

       M. Rovezzi (HFP/JKU)         DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   8 / 32
Limits of conventional high-resolution XRD




  No evidence of second phases                        GaN(0002) peak broadening

                           ⇒ Synchrotron radiation



    M. Rovezzi (HFP/JKU)       DMS & CMS characterization     DEMATEN 2nd workshop (June 2010)   9 / 32
Limits of conventional high-resolution XRD




  No evidence of second phases                        GaN(0002) peak broadening

                           ⇒ Synchrotron radiation



    M. Rovezzi (HFP/JKU)       DMS & CMS characterization     DEMATEN 2nd workshop (June 2010)   9 / 32
European Synchrotron Radiation Facility, Grenoble




    M. Rovezzi (HFP/JKU)   DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   10 / 32
Case studies




 1   Dilute (Ga,Mn)N                   [W. Stefanowicz et al., arXiv.org 0912.4216 (2010)]



 2   Fe segregation in GaN




      M. Rovezzi (HFP/JKU)   DMS & CMS characterization    DEMATEN 2nd workshop (June 2010)   11 / 32
TEM
                   Wide range of Mn concentration up to ≈ 1 at. %




                                                                  Energy dispersive X-ray
                                                                      spectroscopy
      Low-resolution                High-resolution


  No evidence of crystallographic phase separation
  No Mn-induced defects

                            Is Mn really dilute? → SXRD

   M. Rovezzi (HFP/JKU)           DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   12 / 32
TEM
                   Wide range of Mn concentration up to ≈ 1 at. %




                                                                  Energy dispersive X-ray
                                                                      spectroscopy
      Low-resolution                High-resolution


  No evidence of crystallographic phase separation
  No Mn-induced defects

                            Is Mn really dilute? → SXRD

   M. Rovezzi (HFP/JKU)           DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   12 / 32
SXRD
Measurements conducted on BM20 at 10 KeV




                                                        High crystal quality [from the FWHM
                                                        of rocking curves around GaN(0002)]
                                                        No evidence for second phases
                                                        Increment of the lattice
                                                        parameters with Mn concentration
                                                        In situ annealing (under N-rich
                                                        atmosphere) experiments →
                                                        samples stable up to 900 ◦ C

                                                               Where is Mn? → EXAFS




      M. Rovezzi (HFP/JKU)        DMS & CMS characterization        DEMATEN 2nd workshop (June 2010)   13 / 32
SXRD
Measurements conducted on BM20 at 10 KeV




                                                        High crystal quality [from the FWHM
                                                        of rocking curves around GaN(0002)]
                                                        No evidence for second phases
                                                        Increment of the lattice
                                                        parameters with Mn concentration
                                                        In situ annealing (under N-rich
                                                        atmosphere) experiments →
                                                        samples stable up to 900 ◦ C

                                                               Where is Mn? → EXAFS




      M. Rovezzi (HFP/JKU)        DMS & CMS characterization        DEMATEN 2nd workshop (June 2010)   13 / 32
EXAFS
Measurements conducted on BM08 at Mn K-edge

                                   (a)     kmin                                            kmax
EXAFS signal, k χ(k)
2




                                                                                                                        Mn substitutional in GaN at Ga sites
                                                                                                                        (MnGa )
                                          #490A              Fit(MnGa)               #100A
                                                                                                                        Low local disorder
                                     2              4          6             8       10              12
                                              Photoelectron wavevector, k [Å−1]                                         Mn-Ga first shell expansion
                                                                                            O
                                                                                                                        ∆R=2.5(5)%
                                                                     MnGa                MnI T
                                                Mn3GaN




                                   (b)
                                                                   Mn3GaN                MnI                            Additional contributions can be ruled
Magnitude of the FT, |χ(R)| [Å ]
−3




                                           MnI Mn O




                                                                                                      (c)               out in the 5% limit
                                                 I
                                          T




                                                                                                                        Mn interstitial defects and Mn3 GaN
                                                                   1     2       3   4      5         6
                                   Rmin                                                                                 simulated via ab initio codes
                                                                                                     Rmax               [VASP+FEFF8]


                                                                                                                         What Mn charge state? → XANES

                                    1          2         3         4         5       6           7           8
                                         Distance, R [Å] − without phase correction

                                          M. Rovezzi (HFP/JKU)                                              DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   14 / 32
EXAFS
Measurements conducted on BM08 at Mn K-edge

                                   (a)     kmin                                            kmax
EXAFS signal, k χ(k)
2




                                                                                                                        Mn substitutional in GaN at Ga sites
                                                                                                                        (MnGa )
                                          #490A              Fit(MnGa)               #100A
                                                                                                                        Low local disorder
                                     2              4          6             8       10              12
                                              Photoelectron wavevector, k [Å−1]                                         Mn-Ga first shell expansion
                                                                                            O
                                                                                                                        ∆R=2.5(5)%
                                                                     MnGa                MnI T
                                                Mn3GaN




                                   (b)
                                                                   Mn3GaN                MnI                            Additional contributions can be ruled
Magnitude of the FT, |χ(R)| [Å ]
−3




                                           MnI Mn O




                                                                                                      (c)               out in the 5% limit
                                                 I
                                          T




                                                                                                                        Mn interstitial defects and Mn3 GaN
                                                                   1     2       3   4      5         6
                                   Rmin                                                                                 simulated via ab initio codes
                                                                                                     Rmax               [VASP+FEFF8]


                                                                                                                         What Mn charge state? → XANES

                                    1          2         3         4         5       6           7           8
                                         Distance, R [Å] − without phase correction

                                          M. Rovezzi (HFP/JKU)                                              DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   14 / 32
Charge state

Role of TMs charge state in DMS
   Exchange interactions
   Carriers and their localization
   Inter-atomic Coulomb interactions




Mn in GaN
   Mn2+ → 3d 5
   Mn3+ → 3d 4




    M. Rovezzi (HFP/JKU)       DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   15 / 32
Charge state

Role of TMs charge state in DMS
   Exchange interactions
   Carriers and their localization
   Inter-atomic Coulomb interactions




Mn in GaN
   Mn2+ → 3d 5
   Mn3+ → 3d 4




    M. Rovezzi (HFP/JKU)       DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   15 / 32
XANES
Measurements conducted on BM08 at Mn K-edge


                                                                                     (a)
                                                                                                        Absorption edge shifts with the
                                        #100A
                                        #490A                                                           charge state ⇒ Mn3+ ⇒
  Norm. µ(E)




                                          MnO
                                        Mn2O3
                                         MnO2
                                                                                                        confirmed by pre-edge peaks


                 6535 6540 6545 6550 6555 6560 6565 6570

                                        (b)                               #100A
                                                                          #490A
  Norm. Absorption Coefficient − µ(E)




                                                                              4
                                                                         Mn(3d )
                                                                              5
                                                                         Mn(3d )




                                                      (c)                      A4
                                                                        A3
                                                         A1 A2
                                                                                    Bkg
                                                                                    Fit

                                                  6537    6540   6543   6546   6549

                 6530 6540 6550 6560 6570 6580 6590 6600 6610                                           Fine-structure simulated with
                                                         Energy [eV]                                    FDMNES ⇒ MnGa
                                         M. Rovezzi (HFP/JKU)                        DMS & CMS characterization    DEMATEN 2nd workshop (June 2010)   16 / 32
SQUID
Accurate subtraction of the substrate diamagnetic signal and extra m(H,T)


            Magnetization(T)                                    Magnetization(H)




                   ⇒ Paramagnetism from non-interacting Mn3+ ions
     M. Rovezzi (HFP/JKU)          DMS & CMS characterization     DEMATEN 2nd workshop (June 2010)   17 / 32
SQUID
Accurate subtraction of the substrate diamagnetic signal and extra m(H,T)


            Magnetization(T)                                    Magnetization(H)




                   ⇒ Paramagnetism from non-interacting Mn3+ ions
     M. Rovezzi (HFP/JKU)          DMS & CMS characterization     DEMATEN 2nd workshop (June 2010)   17 / 32
Summary

Dilute (Ga,Mn)N - x ≤ 1%
   Mn substitutional in GaN
   Mn3+ charge state
   Paramagnetic




Outlook
   Increase Mn concentration (in the DMS limit)
   Co-doping:
         (Ga,Mn)N:Si → n-type → Mn2+
         (Ga,Mn)N:Mg → p-type → itinerant h




    M. Rovezzi (HFP/JKU)       DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   18 / 32
Summary

Dilute (Ga,Mn)N - x ≤ 1%
   Mn substitutional in GaN
   Mn3+ charge state
   Paramagnetic




Outlook
   Increase Mn concentration (in the DMS limit)
   Co-doping:
         (Ga,Mn)N:Si → n-type → Mn2+
         (Ga,Mn)N:Mg → p-type → itinerant h




    M. Rovezzi (HFP/JKU)       DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   18 / 32
Case studies




 1   Dilute (Ga,Mn)N


 2   Fe segregation in GaN [A. Navarro-Quezada et al., Phys. Rev. B 81, 205206 (2010)]




      M. Rovezzi (HFP/JKU)        DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   19 / 32
(Ga,Fe)N: a high TC magnetic semiconductor?


                                                            Ferromagnetism persisting above
 Paramagnetism from isolated Fe3+                                 room temperature




                            What is the origin of the ferromagnetism?

     M. Rovezzi (HFP/JKU)                DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   20 / 32
(Ga,Fe)N: a high TC magnetic semiconductor?


                                                            Ferromagnetism persisting above
 Paramagnetism from isolated Fe3+                                 room temperature




                            What is the origin of the ferromagnetism?

     M. Rovezzi (HFP/JKU)                DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   20 / 32
Presence of ε-Fe3 N nano-crystals
Bainite structure (hexagonal), ≈ 15 nm average size, TC = 575 K




                ⇒ Solubility limit at ≈ 0.4 % Fe in our growth conditions

       M. Rovezzi (HFP/JKU)           DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   21 / 32
Presence of ε-Fe3 N nano-crystals
Bainite structure (hexagonal), ≈ 15 nm average size, TC = 575 K




                ⇒ Solubility limit at ≈ 0.4 % Fe in our growth conditions

       M. Rovezzi (HFP/JKU)           DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   21 / 32
How to control Fe incorporation in GaN?




   Growth rate


   Co-doping


   Growth temperature




    M. Rovezzi (HFP/JKU)   DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   22 / 32
Control by growth rate




     ⇒ Solubility limit increased by increasing the growth rate (TMGa)

    M. Rovezzi (HFP/JKU)      DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   23 / 32
Control by growth rate




     ⇒ Solubility limit increased by increasing the growth rate (TMGa)

    M. Rovezzi (HFP/JKU)      DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   23 / 32
Fermi-level engineering by co-doping with Si
Partial charge state reduction, Fe3+ → Fe2+ , demonstrated by XANES


    Fe 3d states resides in the GaN band gap
    Co-doping with Si → tuning Fermi level → Fe
    charge state modification
    Coulomb repulsion between Fe ions hinders
    aggregation [T. Dietl, Nature Mat. (2006)]




                              Do this really hinders the aggregation?

       M. Rovezzi (HFP/JKU)               DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   24 / 32
Fermi-level engineering by co-doping with Si
Partial charge state reduction, Fe3+ → Fe2+ , demonstrated by XANES


    Fe 3d states resides in the GaN band gap
    Co-doping with Si → tuning Fermi level → Fe
    charge state modification
    Coulomb repulsion between Fe ions hinders
    aggregation [T. Dietl, Nature Mat. (2006)]




                              Do this really hinders the aggregation?

       M. Rovezzi (HFP/JKU)               DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   24 / 32
Fermi-level engineering by co-doping with Si
Partial charge state reduction, Fe3+ → Fe2+ , demonstrated by XANES


    Fe 3d states resides in the GaN band gap
    Co-doping with Si → tuning Fermi level → Fe
    charge state modification
    Coulomb repulsion between Fe ions hinders
    aggregation [T. Dietl, Nature Mat. (2006)]




                              Do this really hinders the aggregation?

       M. Rovezzi (HFP/JKU)               DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   24 / 32
Control by co-doping




                   ⇒ Solubility limit increased by co-doping with Si
   M. Rovezzi (HFP/JKU)            DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   25 / 32
Control by co-doping




                   ⇒ Solubility limit increased by co-doping with Si
   M. Rovezzi (HFP/JKU)            DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   25 / 32
Growth temperature
SXRD and TEM




   Additional Fe-rich phases:
   γ -Fe4 N, ζ-Fe2 N, α-Fe, γ-Fe
   Nano-crystals size: 10-20 nm

     M. Rovezzi (HFP/JKU)      DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   26 / 32
Growth temperature
XANES & EXAFS


                                                   S691
Norm. Absorption Coefficient − µ(E) [arb. shift]




                                                   S680
                                                   S690                                                            950 °C
                                                    Fit 3
                                                    Fit 2                                                                              XANES: linear
                                                    Fit 1                                                          850 °C              combination fits of
                                                                                                                   800 °C              theoretical spectra
                                                                                                  Fe−Ga
                                                                                                                                       (FDMNES) ⇒ identification
                                                                                          Fe−Fe
                                                                                                                                       and concentration of
                                                                            Rmin




                                                                                   Fe−N
                                                                   |χ(R)|




                                                                                                                      Rmax
                                                                                                                                       different phases
                                                                                                                                       EXAFS: refinement of the
                                                                              1         2          3        4          5
                                                             EF
                                                                              Distance, R [Å] − without phase correction
                                                                                                                                       local structure
                                                   7110     7120      7130         7140 7150 7160         7170   7180    7190
                                                                                       Energy [eV]




                                                            SXRD, (HR)TEM and XAS ⇒ phase-diagram of Fex Ny in GaN



                                                       M. Rovezzi (HFP/JKU)                               DMS & CMS characterization    DEMATEN 2nd workshop (June 2010)   27 / 32
Growth temperature
XANES & EXAFS


                                                   S691
Norm. Absorption Coefficient − µ(E) [arb. shift]




                                                   S680
                                                   S690                                                            950 °C
                                                    Fit 3
                                                    Fit 2                                                                              XANES: linear
                                                    Fit 1                                                          850 °C              combination fits of
                                                                                                                   800 °C              theoretical spectra
                                                                                                  Fe−Ga
                                                                                                                                       (FDMNES) ⇒ identification
                                                                                          Fe−Fe
                                                                                                                                       and concentration of
                                                                            Rmin




                                                                                   Fe−N
                                                                   |χ(R)|




                                                                                                                      Rmax
                                                                                                                                       different phases
                                                                                                                                       EXAFS: refinement of the
                                                                              1         2          3        4          5
                                                             EF
                                                                              Distance, R [Å] − without phase correction
                                                                                                                                       local structure
                                                   7110     7120      7130         7140 7150 7160         7170   7180    7190
                                                                                       Energy [eV]




                                                            SXRD, (HR)TEM and XAS ⇒ phase-diagram of Fex Ny in GaN



                                                       M. Rovezzi (HFP/JKU)                               DMS & CMS characterization    DEMATEN 2nd workshop (June 2010)   27 / 32
Growth temperature
SQUID




                                                            Paramagnetic part ⇒
                                                            dilute and non-interacting
                                                            FeGa
                                                            Superparamagnetic-like
                                                            part ⇒ ferromagnetic
                                                            ε-Fe3 N, γ -Fe4 N α-Fe and
                                                            γ-Fe
                                                            Antiferromagnetic
                                                            component ⇒ ζ-Fe2 N and
                                                            highly-nitrated Fex N (x≤2)
                                                            phases




        M. Rovezzi (HFP/JKU)   DMS & CMS characterization    DEMATEN 2nd workshop (June 2010)   28 / 32
Summary

Segregated (Ga,Fe)N
   High TC FM → ε-Fe3 N clusters
   Solubility limit controlled by
      → growth-rate
      → co-doping
   Growth temperature
      → additional Fex Ny phases
        → wide range of magnetic behaviors




Outlook
   Control of single-phase Fex Ny in/on GaN



    M. Rovezzi (HFP/JKU)        DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   29 / 32
Summary

Segregated (Ga,Fe)N
   High TC FM → ε-Fe3 N clusters
   Solubility limit controlled by
      → growth-rate
      → co-doping
   Growth temperature
      → additional Fex Ny phases
        → wide range of magnetic behaviors




Outlook
   Control of single-phase Fex Ny in/on GaN



    M. Rovezzi (HFP/JKU)        DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   29 / 32
CMS
Second generation spintronics devices


Spin battery




Electromotive force and huge
magnetoresistance observed in
magnetic tunnel junctions with
zb-MnAs clusters
Demonstrated at 30 K




                                                                 [N.H. Pham et al., Nature (2009)]

       M. Rovezzi (HFP/JKU)             DMS & CMS characterization        DEMATEN 2nd workshop (June 2010)   30 / 32
Conclusions




Growth          characterization protocol
   Self-consistent loop
     1   Growth/optimization
     2   Structural characterization
     3   Magnetic characterization
     4   Modeling/simulation
   Synchrotron radiation as required tool




    M. Rovezzi (HFP/JKU)          DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   31 / 32
Thank you for your attention!

Contact/further discussion
                           mauro.rovezzi@jku.at




References for this work
   W. Stefanowicz et al.,
   arXiv.org 0912.4216 (2010) → soon in Phys. Rev. B
   A. Navarro-Quezada et al.,
   Phys. Rev. B 81, 205206 (2010)
   M. Rovezzi et al.,
   Phys. Rev. B 79, 195209 (2009)
   A. Bonanni et al.,
   Phys. Rev. Lett. 101, 135502 (2008)


    M. Rovezzi (HFP/JKU)       DMS & CMS characterization   DEMATEN 2nd workshop (June 2010)   32 / 32

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From DMS to CMS: a characterization protocol

  • 1. From dilute to condensed magnetic semiconductors: a protocol for systematic characterization Mauro Rovezzi1 1 Institute for Semiconductors and Solid State Physics, Johannes Kepler University, Linz, Austria [W. Stefanowicz et al., arXiv.org 0912.4216 (2010)] [A. Navarro-Quezada et al., Phys. Rev. B 81, 205206 (2010)] M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 1 / 32
  • 2. Co-authors A. Navarro-Quezada, B. Faina, T. Devillers, T. Li, A. rois, T. Winkler, A. Bonanni Institute for Semiconductors and Solid State Physics, Johannes Kepler University, Linz, Austria W. Stefanowicz, D. Sztenkiel, R. Jakiela, M. Sawicki, T. Dietl Institute of Physics, Polish Academy of Sciences, Warsaw, Poland R. T. Lechner, G. Bauer Institute for Semiconductors and Solid State Physics, Johannes Kepler University, Linz, Austria F. d’Acapito Italian National Research Council, IOM-OGG, c/o ESRF GILDA, Grenoble, France M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 2 / 32
  • 3. Outline 1 Introduction 2 Growth characterization protocol 3 Case studies Dilute (Ga,Mn)N Fe segregation in GaN 4 Conclusions M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 3 / 32
  • 4. Introduction Building-blocks for Spintronics devices [A. Bonanni and T. Dietl, Chem. Soc. Rev. (2010)] M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 4 / 32
  • 5. DMS → (Ga,Mn)N With holes → sp-d Zener model x=5% and 3.5×1020 h/cm3 [T. Dietl et al., Science (2000)] Controversial experimental reports ⇒ accurate nanoscale characterization M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 5 / 32
  • 6. DMS → (Ga,Mn)N With holes → sp-d Zener model Without holes → double exchange [K. Sato et al., Phys. Rev. B (2004)] x=5% and 3.5×1020 h/cm3 [T. Dietl et al., Science (2000)] [L. Berqvist et al., Phys. Rev. Lett. (2004)] Controversial experimental reports ⇒ accurate nanoscale characterization M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 5 / 32
  • 7. DMS → (Ga,Mn)N With holes → sp-d Zener model Without holes → double exchange [K. Sato et al., Phys. Rev. B (2004)] x=5% and 3.5×1020 h/cm3 [T. Dietl et al., Science (2000)] [L. Berqvist et al., Phys. Rev. Lett. (2004)] Controversial experimental reports ⇒ accurate nanoscale characterization M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 5 / 32
  • 8. CMS → (Ga,Fe)N TMs solubility in (most) semiconductors at thermal equilibrium is low ⇒ chemical/crystallographic phase separation ⇒ a priori unknown magnetic properties ⇒ mostly high TC FM Detection and control of phase separation ⇒ nano-characterization tools M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 6 / 32
  • 9. CMS → (Ga,Fe)N TMs solubility in (most) semiconductors at thermal equilibrium is low ⇒ chemical/crystallographic phase separation ⇒ a priori unknown magnetic properties ⇒ mostly high TC FM Examples of chemical phase separation (spinodal decomposition in DMS literature) (Ga,Mn)As annealing [M. Moreno et al., J. Appl. Phys. (2002)] Detection and control of phase separation ⇒ nano-characterization tools M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 6 / 32
  • 10. CMS → (Ga,Fe)N TMs solubility in (most) semiconductors at thermal equilibrium is low ⇒ chemical/crystallographic phase separation ⇒ a priori unknown magnetic properties ⇒ mostly high TC FM Examples of chemical phase separation (spinodal decomposition in DMS literature) (Ga,Mn)As annealing (Ga,Mn)N clusters [G. Martinez-Criado et al., Appl. Phys. Lett. (2005)] [M. Moreno et al., J. Appl. Phys. (2002)] Detection and control of phase separation ⇒ nano-characterization tools M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 6 / 32
  • 11. CMS → (Ga,Fe)N TMs solubility in (most) semiconductors at thermal equilibrium is low ⇒ chemical/crystallographic phase separation ⇒ a priori unknown magnetic properties ⇒ mostly high TC FM Examples of chemical phase separation (spinodal decomposition in DMS literature) (Ga,Mn)As annealing (Ga,Mn)N clusters (Ge,Mn) nano-columns [G. Martinez-Criado et al., Appl. Phys. Lett. (2005)] [M. Moreno et al., J. Appl. [M. Jamet et al., Nature Mat. Phys. (2002)] (2006)] Detection and control of phase separation ⇒ nano-characterization tools M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 6 / 32
  • 12. CMS → (Ga,Fe)N TMs solubility in (most) semiconductors at thermal equilibrium is low ⇒ chemical/crystallographic phase separation ⇒ a priori unknown magnetic properties ⇒ mostly high TC FM Examples of chemical phase separation (spinodal decomposition in DMS literature) (Ga,Mn)As annealing (Ga,Mn)N clusters (Ge,Mn) nano-columns [G. Martinez-Criado et al., Appl. Phys. Lett. (2005)] [M. Moreno et al., J. Appl. [M. Jamet et al., Nature Mat. Phys. (2002)] (2006)] Detection and control of phase separation ⇒ nano-characterization tools M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 6 / 32
  • 13. Growth characterization protocol M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 7 / 32
  • 14. Metalorganic Vapour Phase Epitaxy (Ga,Mn)N and (Ga,Fe)N[:Si] AIXTRON 200RF horizontal reactor c-plane sapphire substrates Precursors: TMGa, NH3 , Cp2 Fe, Cp2 Mn, SiH4 Monitoring: ellipsometry Well established growth procedure 1 Substrate nitridation 2 LT (540 ◦ C) GaN nucl. layer 3 Annealing/recrystallization 4 1 µm HT (1050 ◦ C) GaN 5 0.5 – 1 µm GaN:(Fe/Mn)[:Si] 800 – 950 ◦ C 50 – 490 sccm (→ 0.05 – 1 %) M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 8 / 32
  • 15. Limits of conventional high-resolution XRD No evidence of second phases GaN(0002) peak broadening ⇒ Synchrotron radiation M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 9 / 32
  • 16. Limits of conventional high-resolution XRD No evidence of second phases GaN(0002) peak broadening ⇒ Synchrotron radiation M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 9 / 32
  • 17. European Synchrotron Radiation Facility, Grenoble M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 10 / 32
  • 18. Case studies 1 Dilute (Ga,Mn)N [W. Stefanowicz et al., arXiv.org 0912.4216 (2010)] 2 Fe segregation in GaN M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 11 / 32
  • 19. TEM Wide range of Mn concentration up to ≈ 1 at. % Energy dispersive X-ray spectroscopy Low-resolution High-resolution No evidence of crystallographic phase separation No Mn-induced defects Is Mn really dilute? → SXRD M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 12 / 32
  • 20. TEM Wide range of Mn concentration up to ≈ 1 at. % Energy dispersive X-ray spectroscopy Low-resolution High-resolution No evidence of crystallographic phase separation No Mn-induced defects Is Mn really dilute? → SXRD M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 12 / 32
  • 21. SXRD Measurements conducted on BM20 at 10 KeV High crystal quality [from the FWHM of rocking curves around GaN(0002)] No evidence for second phases Increment of the lattice parameters with Mn concentration In situ annealing (under N-rich atmosphere) experiments → samples stable up to 900 ◦ C Where is Mn? → EXAFS M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 13 / 32
  • 22. SXRD Measurements conducted on BM20 at 10 KeV High crystal quality [from the FWHM of rocking curves around GaN(0002)] No evidence for second phases Increment of the lattice parameters with Mn concentration In situ annealing (under N-rich atmosphere) experiments → samples stable up to 900 ◦ C Where is Mn? → EXAFS M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 13 / 32
  • 23. EXAFS Measurements conducted on BM08 at Mn K-edge (a) kmin kmax EXAFS signal, k χ(k) 2 Mn substitutional in GaN at Ga sites (MnGa ) #490A Fit(MnGa) #100A Low local disorder 2 4 6 8 10 12 Photoelectron wavevector, k [Å−1] Mn-Ga first shell expansion O ∆R=2.5(5)% MnGa MnI T Mn3GaN (b) Mn3GaN MnI Additional contributions can be ruled Magnitude of the FT, |χ(R)| [Å ] −3 MnI Mn O (c) out in the 5% limit I T Mn interstitial defects and Mn3 GaN 1 2 3 4 5 6 Rmin simulated via ab initio codes Rmax [VASP+FEFF8] What Mn charge state? → XANES 1 2 3 4 5 6 7 8 Distance, R [Å] − without phase correction M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 14 / 32
  • 24. EXAFS Measurements conducted on BM08 at Mn K-edge (a) kmin kmax EXAFS signal, k χ(k) 2 Mn substitutional in GaN at Ga sites (MnGa ) #490A Fit(MnGa) #100A Low local disorder 2 4 6 8 10 12 Photoelectron wavevector, k [Å−1] Mn-Ga first shell expansion O ∆R=2.5(5)% MnGa MnI T Mn3GaN (b) Mn3GaN MnI Additional contributions can be ruled Magnitude of the FT, |χ(R)| [Å ] −3 MnI Mn O (c) out in the 5% limit I T Mn interstitial defects and Mn3 GaN 1 2 3 4 5 6 Rmin simulated via ab initio codes Rmax [VASP+FEFF8] What Mn charge state? → XANES 1 2 3 4 5 6 7 8 Distance, R [Å] − without phase correction M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 14 / 32
  • 25. Charge state Role of TMs charge state in DMS Exchange interactions Carriers and their localization Inter-atomic Coulomb interactions Mn in GaN Mn2+ → 3d 5 Mn3+ → 3d 4 M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 15 / 32
  • 26. Charge state Role of TMs charge state in DMS Exchange interactions Carriers and their localization Inter-atomic Coulomb interactions Mn in GaN Mn2+ → 3d 5 Mn3+ → 3d 4 M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 15 / 32
  • 27. XANES Measurements conducted on BM08 at Mn K-edge (a) Absorption edge shifts with the #100A #490A charge state ⇒ Mn3+ ⇒ Norm. µ(E) MnO Mn2O3 MnO2 confirmed by pre-edge peaks 6535 6540 6545 6550 6555 6560 6565 6570 (b) #100A #490A Norm. Absorption Coefficient − µ(E) 4 Mn(3d ) 5 Mn(3d ) (c) A4 A3 A1 A2 Bkg Fit 6537 6540 6543 6546 6549 6530 6540 6550 6560 6570 6580 6590 6600 6610 Fine-structure simulated with Energy [eV] FDMNES ⇒ MnGa M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 16 / 32
  • 28. SQUID Accurate subtraction of the substrate diamagnetic signal and extra m(H,T) Magnetization(T) Magnetization(H) ⇒ Paramagnetism from non-interacting Mn3+ ions M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 17 / 32
  • 29. SQUID Accurate subtraction of the substrate diamagnetic signal and extra m(H,T) Magnetization(T) Magnetization(H) ⇒ Paramagnetism from non-interacting Mn3+ ions M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 17 / 32
  • 30. Summary Dilute (Ga,Mn)N - x ≤ 1% Mn substitutional in GaN Mn3+ charge state Paramagnetic Outlook Increase Mn concentration (in the DMS limit) Co-doping: (Ga,Mn)N:Si → n-type → Mn2+ (Ga,Mn)N:Mg → p-type → itinerant h M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 18 / 32
  • 31. Summary Dilute (Ga,Mn)N - x ≤ 1% Mn substitutional in GaN Mn3+ charge state Paramagnetic Outlook Increase Mn concentration (in the DMS limit) Co-doping: (Ga,Mn)N:Si → n-type → Mn2+ (Ga,Mn)N:Mg → p-type → itinerant h M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 18 / 32
  • 32. Case studies 1 Dilute (Ga,Mn)N 2 Fe segregation in GaN [A. Navarro-Quezada et al., Phys. Rev. B 81, 205206 (2010)] M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 19 / 32
  • 33. (Ga,Fe)N: a high TC magnetic semiconductor? Ferromagnetism persisting above Paramagnetism from isolated Fe3+ room temperature What is the origin of the ferromagnetism? M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 20 / 32
  • 34. (Ga,Fe)N: a high TC magnetic semiconductor? Ferromagnetism persisting above Paramagnetism from isolated Fe3+ room temperature What is the origin of the ferromagnetism? M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 20 / 32
  • 35. Presence of ε-Fe3 N nano-crystals Bainite structure (hexagonal), ≈ 15 nm average size, TC = 575 K ⇒ Solubility limit at ≈ 0.4 % Fe in our growth conditions M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 21 / 32
  • 36. Presence of ε-Fe3 N nano-crystals Bainite structure (hexagonal), ≈ 15 nm average size, TC = 575 K ⇒ Solubility limit at ≈ 0.4 % Fe in our growth conditions M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 21 / 32
  • 37. How to control Fe incorporation in GaN? Growth rate Co-doping Growth temperature M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 22 / 32
  • 38. Control by growth rate ⇒ Solubility limit increased by increasing the growth rate (TMGa) M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 23 / 32
  • 39. Control by growth rate ⇒ Solubility limit increased by increasing the growth rate (TMGa) M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 23 / 32
  • 40. Fermi-level engineering by co-doping with Si Partial charge state reduction, Fe3+ → Fe2+ , demonstrated by XANES Fe 3d states resides in the GaN band gap Co-doping with Si → tuning Fermi level → Fe charge state modification Coulomb repulsion between Fe ions hinders aggregation [T. Dietl, Nature Mat. (2006)] Do this really hinders the aggregation? M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 24 / 32
  • 41. Fermi-level engineering by co-doping with Si Partial charge state reduction, Fe3+ → Fe2+ , demonstrated by XANES Fe 3d states resides in the GaN band gap Co-doping with Si → tuning Fermi level → Fe charge state modification Coulomb repulsion between Fe ions hinders aggregation [T. Dietl, Nature Mat. (2006)] Do this really hinders the aggregation? M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 24 / 32
  • 42. Fermi-level engineering by co-doping with Si Partial charge state reduction, Fe3+ → Fe2+ , demonstrated by XANES Fe 3d states resides in the GaN band gap Co-doping with Si → tuning Fermi level → Fe charge state modification Coulomb repulsion between Fe ions hinders aggregation [T. Dietl, Nature Mat. (2006)] Do this really hinders the aggregation? M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 24 / 32
  • 43. Control by co-doping ⇒ Solubility limit increased by co-doping with Si M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 25 / 32
  • 44. Control by co-doping ⇒ Solubility limit increased by co-doping with Si M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 25 / 32
  • 45. Growth temperature SXRD and TEM Additional Fe-rich phases: γ -Fe4 N, ζ-Fe2 N, α-Fe, γ-Fe Nano-crystals size: 10-20 nm M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 26 / 32
  • 46. Growth temperature XANES & EXAFS S691 Norm. Absorption Coefficient − µ(E) [arb. shift] S680 S690 950 °C Fit 3 Fit 2 XANES: linear Fit 1 850 °C combination fits of 800 °C theoretical spectra Fe−Ga (FDMNES) ⇒ identification Fe−Fe and concentration of Rmin Fe−N |χ(R)| Rmax different phases EXAFS: refinement of the 1 2 3 4 5 EF Distance, R [Å] − without phase correction local structure 7110 7120 7130 7140 7150 7160 7170 7180 7190 Energy [eV] SXRD, (HR)TEM and XAS ⇒ phase-diagram of Fex Ny in GaN M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 27 / 32
  • 47. Growth temperature XANES & EXAFS S691 Norm. Absorption Coefficient − µ(E) [arb. shift] S680 S690 950 °C Fit 3 Fit 2 XANES: linear Fit 1 850 °C combination fits of 800 °C theoretical spectra Fe−Ga (FDMNES) ⇒ identification Fe−Fe and concentration of Rmin Fe−N |χ(R)| Rmax different phases EXAFS: refinement of the 1 2 3 4 5 EF Distance, R [Å] − without phase correction local structure 7110 7120 7130 7140 7150 7160 7170 7180 7190 Energy [eV] SXRD, (HR)TEM and XAS ⇒ phase-diagram of Fex Ny in GaN M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 27 / 32
  • 48. Growth temperature SQUID Paramagnetic part ⇒ dilute and non-interacting FeGa Superparamagnetic-like part ⇒ ferromagnetic ε-Fe3 N, γ -Fe4 N α-Fe and γ-Fe Antiferromagnetic component ⇒ ζ-Fe2 N and highly-nitrated Fex N (x≤2) phases M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 28 / 32
  • 49. Summary Segregated (Ga,Fe)N High TC FM → ε-Fe3 N clusters Solubility limit controlled by → growth-rate → co-doping Growth temperature → additional Fex Ny phases → wide range of magnetic behaviors Outlook Control of single-phase Fex Ny in/on GaN M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 29 / 32
  • 50. Summary Segregated (Ga,Fe)N High TC FM → ε-Fe3 N clusters Solubility limit controlled by → growth-rate → co-doping Growth temperature → additional Fex Ny phases → wide range of magnetic behaviors Outlook Control of single-phase Fex Ny in/on GaN M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 29 / 32
  • 51. CMS Second generation spintronics devices Spin battery Electromotive force and huge magnetoresistance observed in magnetic tunnel junctions with zb-MnAs clusters Demonstrated at 30 K [N.H. Pham et al., Nature (2009)] M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 30 / 32
  • 52. Conclusions Growth characterization protocol Self-consistent loop 1 Growth/optimization 2 Structural characterization 3 Magnetic characterization 4 Modeling/simulation Synchrotron radiation as required tool M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 31 / 32
  • 53. Thank you for your attention! Contact/further discussion mauro.rovezzi@jku.at References for this work W. Stefanowicz et al., arXiv.org 0912.4216 (2010) → soon in Phys. Rev. B A. Navarro-Quezada et al., Phys. Rev. B 81, 205206 (2010) M. Rovezzi et al., Phys. Rev. B 79, 195209 (2009) A. Bonanni et al., Phys. Rev. Lett. 101, 135502 (2008) M. Rovezzi (HFP/JKU) DMS & CMS characterization DEMATEN 2nd workshop (June 2010) 32 / 32