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International Journal of Chemistry, Mathematics and Physics (IJCMP)
[Vol-7, Issue-4, Jul-Aug, 2023]
https://dx.doi.org/10.22161/ijcmp.7.4.2
ISSN: 2456-866X
Int. j. chem. math. phys.
http://www.aipublications.com/ijcmp/ Page | 9
Comparative Analysis of Optical Properties of Cdo
Annealed thin Film deposited by Spray Pyrolysis Method
Dr. L. M. Shanware
N. S. College, Mulchera, Gadchirol, Maharashtra, India
Received: 14 Jun 2023; Received in revised form: 19 Jul 2023; Accepted: 28 Jul 2023; Available online: 03 Aug 2023
©2023 The Author(s). Published by AI Publications. This is an open access article under the CC BY license
(https://creativecommons.org/licenses/by/4.0/)
Abstract— Cadmium oxide transparent thin film is deposited by spray pyrolysis technique on glass
subtract at 4000
C and annealed at a temperature of 100 °C for one hour. The band gap was found depend
on varius parameters is studied. It is noted that the shift in band gap i.e. decrease with the increasing film
thickness in the range 2.15 eV to 2.40 eV. The optical constants such as, band gap, refractive index,
extinction coefficient as a function of photon energy for all prepared films were calculated. also studied
The XRD revealed of thin film of CdO shows polycrystalline in nature
Keywords— CdO thin film, spray pyrolysis, optical properties, band gap, XRD.
I. INTRODUCTION
Cadmium oxide is transparent conducting oxide having
high optical transparency in the visible region and near
infrared region. Due to the high conductivity of the CdO
films has used to produce high-efficiency solar cells. CdO
has interesting properties like large band gap, low
electrical resistivity, high transmission in the visible region
etc. These properties make it useful for a wide range of
applications CdO thin films are promising material for
various applications for electronic and optoelectronic
application such as for solar cell application [1-3] ,photo
diode transparent electrodes, solar cell, liquid crystal
displays, , but also for photodiodes [4] and gas sensors [5].
The Cadmium oxide from group II-VI are explored in
determines of thin films devices. The effect of thickness on
band gap was briefly studied in this paper. The various
techniques have been used for depositing CdO thin films,
are available in literature such as spray pyrolysis[6],
sputtering[7], sol-gel spin coating[8], activated reactive
evaporation[9], metal Organic Chemical Vapor deposition
[10], pulsed laser deposition[11]. In this article we studied
the optical characterization of CdO thin films were
prepared using spray pyrolysis technique by using UV-
VIS spectrometer from its absorption spectrum in optical
range (380 – 1000nm).
II. EXPERIMENTAL
The deposition system and conditions are reported
elsewhere ( 12) The glass slide is used as a glass substrate
to deposited CdO thin film. The glass substrate was
cleaned in concentrated Nitrate acid, alcohol and distilled
water for several times to remove the impurities on the
surface of substrate before the deposition. Cadmium
chloride is stirrer for 6-7 hours and the solution stirrer 10
min on electronic stirrer. Cadmium chloride (0.01N)
solution was prepared in double distilled water and
hydrogen peroxide 3 to 4 ml was mixed together with
cadmium chloride precursor in the sprayer. The weight of
the glass substrate before spraying & after spraying was
measured using electron unipan microbalance to measure
thickness of fim by weighing method.The clean substrate
was arranged on hot metal plate on heating coil with
controlled variac. This glass substrate is heated at constant
suitable temperature 4000
C. The nozzle-to-substrate
distance was approximately 15 cm, and the spraying time
was around 10 min.The solution sprayed on the glass slide
was to form uniform CdO thin film on the substrate with
high pressure through a fine sprayer bore. After the
solution finished the substrate was allow to cool up to
room temperature then annealed at 1000
Cfor 1 hour. The
CdO thin film is then used to study optical properties and
energy gap measurement. After preparation the CdO
annealed thin films by spray pyrolysis technique , the
optical absorption & percentage transmission were
Shanware
International Journal of Chemistry, Mathematics and Physics (IJCMP), Vol-7, Issue-4 (2023)
Int. j. chem. math. phys.
http://www.aipublications.com/ijcmp/ Page | 10
measured by UV – VIS Spectrophotometer ELCO (SL-
159) in the wavelength range 380 – 1000 nm. The XRD
patterns of annealed CdO thin films were recorded with
Phillips X-ray diffractometer wavelength 1.542 Ao
was
used
III. RESULT AND DISCUSSION
The semiconductor band gap Eg was determined by
analysis the optical data with the expression equation 1
for the optical absorption and photon energy his using
relation
Energy band gap of materials is related to absorption
coefficient α [13-14] as
𝛼 =
𝐴
ℎ𝜈
(ℎ𝜈 − 𝐸𝑔)1/2
--------------------(1)
where A is constant , 𝜈 is incident photon energy, h is the
Plank’s constant and Eg is band gap. the plot of (𝛼ℎ𝜈)2
verses photon energy (ℎ𝜈 ) for CdO thin film shows
straight line Hence, a straight line tangent to a linear
portion which gives the band gap energy
The energy band gap obtained in this work is 2.25 eV(BG)
This is in good agreement with the previously reported
values of 2.4 ev and 2.42 eV [15,16] It is observed that as
thickness increases T1 < T2 < T3 that the transmission
decreases with increase in thin film thickness. And hence it
is concluded that as the band gap energy of the thin films
decreased as the film thickness of the samples is increased
and the grain size above increases.
The refractive indeed () with wavelength were calculated
by using relation ( 17)
μ =
(1+√R)
(1−√R)
-----(2)
Fig.2: Refractive index () vs. wavelength ()
It observed that the extinction coefficient and refractive
index was high in the wavelength range of 325 - 400
nm and low in the in the range 650-900 nm The
refractive index of the films was found to be decreasing
with an increase in the wavelength
Fig.3. XRD Pattern of CdO
Figure 1 shows the XRD patterns of CdO films
prepared at 400°C on glass substrates. CdO sample
shows that the film peaks at 30.540, 34.120,
36.500,47.660,52.830
0.00E+00
2.00E+08
4.00E+08
6.00E+08
8.00E+08
1.00E+09
1.20E+09
1.40E+09
1.60E+09
1 1.5 2 2.5 3 3.5 4
hn eV.
.
Fig.1 Direct band CdO thin films
0
1
2
3
4
5
6
600 700 800 900 1000 1100
T3
T2
T1
Thickness T1 < T2 < T3
T1 < T2 < T3
Shanware
International Journal of Chemistry, Mathematics and Physics (IJCMP), Vol-7, Issue-4 (2023)
Int. j. chem. math. phys.
http://www.aipublications.com/ijcmp/ Page | 11
IV. CONCLUSION
The optical and structural analysis of the CdO thin film
suggests were crystalline in structure and the band gap
are in the range 2.15 eV to 2.40 eV. This process has good
control over the thickness uniformity. it is observed that
films show normal dispersion behavior i.e. refractive
index of the films falls as the wavelength increases over
the visible region The films prepared by this method are
pin hole free and have good adherence to the substrate
The strong and sharp diffraction peaks indicate the
good polycrystallization
REFERENCES
[1] T.L. Chu, S.S. Chu, J. Elect. Mater. 19 (1990) 1003.
[2] C.H. Champness, C.H. Chan, Solar Energy Mater. Solar
Cells 37
[3] A.A. Al-Qurani, C.H. Champness, in: Proceedings of the
26th
IEEE Photovoltaic Specialists Conference, Anaheim,
CA, 1997,p. 415.
[4] R. Kondo, H. Okhimura, Y. Sakai, Jpn. J. Appl. Phys. 10
(1971) 547.
[5] A. Shiori, Japanese Patent 7, (1979). 909-995
[6] Dong Ju Seo, Structural and Optical Properties of CdO
Films Deposited by Spray Pyrolysis, J Korean Phys Soc,
2004, 45,1575-1579.
[7] T. K Subramanyam, S Uthanna and B Srinivasulu Naidu,
Mater Lett, 1998, 35, 214–220.
[8] D. M Carballeda, R CastanedoPérez, O Jiménez-Sandoval S
Jiménez Sandoval, G Torres- Delgado and C. I Zúñiga-
Romero, Thin Solid Films, 2000, 371, 105–108.
[9] X. R. Ye, C. Daraio, C. Wang, and J. B. Talbot, J.
Nanoscience and Nanotechnology, (2006) 6
[10] Z. Guo-hua, L. Ming-fang, and L. Ming-Li CEJC, 5 (2007)
[11] N. Ahmed Abd, A. Raid Ismail and F. Nadir Habubi
,Journal of Materials ScienceMaterials in Electronics,
25(2014)
[12] R.S. Meshram, R.M. Thombre International Journal of
Bioscience, agriculture and Technology, Jan 2024 Issue 2
Vol 1 pp854
[13] K.T. Ramakrishna Reddy, G.M. Shanthini, D. Johnston,
R.W. Miles, Thin solid films 427(2003) 397-400.
[14] M.M. Islam, J Podder, M.R.Islam, Optoelecronics and
Advanced Rapid Communication Vol. 4, No. 7, July 2010,
p.968-972.
[15] B.G. Jeyaprakash,K. Kesavan, R. Ashok kumar, S Mohan
and A Amalarani, Bull Mater Sci., Vol. 34, No. 4, July
2011, 99. 601-605.
[16] Dong Ju, Journal of the Korean Physical Society, Vol. 45,
No. 6, Dec 2004, pp. 1575
[17] Swanepoel R. J. Phys. E. Sci Instrum, 16, (1983.) 1214
[18] M. Azizar Rahman , M.K.R.Khan Materials Sciencein
Semiconductor Processing 24,(2014),26–33

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Comparative Analysis of Optical Properties of Cdo Annealed thin Film deposited by Spray Pyrolysis Method

  • 1. International Journal of Chemistry, Mathematics and Physics (IJCMP) [Vol-7, Issue-4, Jul-Aug, 2023] https://dx.doi.org/10.22161/ijcmp.7.4.2 ISSN: 2456-866X Int. j. chem. math. phys. http://www.aipublications.com/ijcmp/ Page | 9 Comparative Analysis of Optical Properties of Cdo Annealed thin Film deposited by Spray Pyrolysis Method Dr. L. M. Shanware N. S. College, Mulchera, Gadchirol, Maharashtra, India Received: 14 Jun 2023; Received in revised form: 19 Jul 2023; Accepted: 28 Jul 2023; Available online: 03 Aug 2023 ©2023 The Author(s). Published by AI Publications. This is an open access article under the CC BY license (https://creativecommons.org/licenses/by/4.0/) Abstract— Cadmium oxide transparent thin film is deposited by spray pyrolysis technique on glass subtract at 4000 C and annealed at a temperature of 100 °C for one hour. The band gap was found depend on varius parameters is studied. It is noted that the shift in band gap i.e. decrease with the increasing film thickness in the range 2.15 eV to 2.40 eV. The optical constants such as, band gap, refractive index, extinction coefficient as a function of photon energy for all prepared films were calculated. also studied The XRD revealed of thin film of CdO shows polycrystalline in nature Keywords— CdO thin film, spray pyrolysis, optical properties, band gap, XRD. I. INTRODUCTION Cadmium oxide is transparent conducting oxide having high optical transparency in the visible region and near infrared region. Due to the high conductivity of the CdO films has used to produce high-efficiency solar cells. CdO has interesting properties like large band gap, low electrical resistivity, high transmission in the visible region etc. These properties make it useful for a wide range of applications CdO thin films are promising material for various applications for electronic and optoelectronic application such as for solar cell application [1-3] ,photo diode transparent electrodes, solar cell, liquid crystal displays, , but also for photodiodes [4] and gas sensors [5]. The Cadmium oxide from group II-VI are explored in determines of thin films devices. The effect of thickness on band gap was briefly studied in this paper. The various techniques have been used for depositing CdO thin films, are available in literature such as spray pyrolysis[6], sputtering[7], sol-gel spin coating[8], activated reactive evaporation[9], metal Organic Chemical Vapor deposition [10], pulsed laser deposition[11]. In this article we studied the optical characterization of CdO thin films were prepared using spray pyrolysis technique by using UV- VIS spectrometer from its absorption spectrum in optical range (380 – 1000nm). II. EXPERIMENTAL The deposition system and conditions are reported elsewhere ( 12) The glass slide is used as a glass substrate to deposited CdO thin film. The glass substrate was cleaned in concentrated Nitrate acid, alcohol and distilled water for several times to remove the impurities on the surface of substrate before the deposition. Cadmium chloride is stirrer for 6-7 hours and the solution stirrer 10 min on electronic stirrer. Cadmium chloride (0.01N) solution was prepared in double distilled water and hydrogen peroxide 3 to 4 ml was mixed together with cadmium chloride precursor in the sprayer. The weight of the glass substrate before spraying & after spraying was measured using electron unipan microbalance to measure thickness of fim by weighing method.The clean substrate was arranged on hot metal plate on heating coil with controlled variac. This glass substrate is heated at constant suitable temperature 4000 C. The nozzle-to-substrate distance was approximately 15 cm, and the spraying time was around 10 min.The solution sprayed on the glass slide was to form uniform CdO thin film on the substrate with high pressure through a fine sprayer bore. After the solution finished the substrate was allow to cool up to room temperature then annealed at 1000 Cfor 1 hour. The CdO thin film is then used to study optical properties and energy gap measurement. After preparation the CdO annealed thin films by spray pyrolysis technique , the optical absorption & percentage transmission were
  • 2. Shanware International Journal of Chemistry, Mathematics and Physics (IJCMP), Vol-7, Issue-4 (2023) Int. j. chem. math. phys. http://www.aipublications.com/ijcmp/ Page | 10 measured by UV – VIS Spectrophotometer ELCO (SL- 159) in the wavelength range 380 – 1000 nm. The XRD patterns of annealed CdO thin films were recorded with Phillips X-ray diffractometer wavelength 1.542 Ao was used III. RESULT AND DISCUSSION The semiconductor band gap Eg was determined by analysis the optical data with the expression equation 1 for the optical absorption and photon energy his using relation Energy band gap of materials is related to absorption coefficient α [13-14] as 𝛼 = 𝐴 ℎ𝜈 (ℎ𝜈 − 𝐸𝑔)1/2 --------------------(1) where A is constant , 𝜈 is incident photon energy, h is the Plank’s constant and Eg is band gap. the plot of (𝛼ℎ𝜈)2 verses photon energy (ℎ𝜈 ) for CdO thin film shows straight line Hence, a straight line tangent to a linear portion which gives the band gap energy The energy band gap obtained in this work is 2.25 eV(BG) This is in good agreement with the previously reported values of 2.4 ev and 2.42 eV [15,16] It is observed that as thickness increases T1 < T2 < T3 that the transmission decreases with increase in thin film thickness. And hence it is concluded that as the band gap energy of the thin films decreased as the film thickness of the samples is increased and the grain size above increases. The refractive indeed () with wavelength were calculated by using relation ( 17) μ = (1+√R) (1−√R) -----(2) Fig.2: Refractive index () vs. wavelength () It observed that the extinction coefficient and refractive index was high in the wavelength range of 325 - 400 nm and low in the in the range 650-900 nm The refractive index of the films was found to be decreasing with an increase in the wavelength Fig.3. XRD Pattern of CdO Figure 1 shows the XRD patterns of CdO films prepared at 400°C on glass substrates. CdO sample shows that the film peaks at 30.540, 34.120, 36.500,47.660,52.830 0.00E+00 2.00E+08 4.00E+08 6.00E+08 8.00E+08 1.00E+09 1.20E+09 1.40E+09 1.60E+09 1 1.5 2 2.5 3 3.5 4 hn eV. . Fig.1 Direct band CdO thin films 0 1 2 3 4 5 6 600 700 800 900 1000 1100 T3 T2 T1 Thickness T1 < T2 < T3 T1 < T2 < T3
  • 3. Shanware International Journal of Chemistry, Mathematics and Physics (IJCMP), Vol-7, Issue-4 (2023) Int. j. chem. math. phys. http://www.aipublications.com/ijcmp/ Page | 11 IV. CONCLUSION The optical and structural analysis of the CdO thin film suggests were crystalline in structure and the band gap are in the range 2.15 eV to 2.40 eV. This process has good control over the thickness uniformity. it is observed that films show normal dispersion behavior i.e. refractive index of the films falls as the wavelength increases over the visible region The films prepared by this method are pin hole free and have good adherence to the substrate The strong and sharp diffraction peaks indicate the good polycrystallization REFERENCES [1] T.L. Chu, S.S. Chu, J. Elect. Mater. 19 (1990) 1003. [2] C.H. Champness, C.H. Chan, Solar Energy Mater. Solar Cells 37 [3] A.A. Al-Qurani, C.H. Champness, in: Proceedings of the 26th IEEE Photovoltaic Specialists Conference, Anaheim, CA, 1997,p. 415. [4] R. Kondo, H. Okhimura, Y. Sakai, Jpn. J. Appl. Phys. 10 (1971) 547. [5] A. Shiori, Japanese Patent 7, (1979). 909-995 [6] Dong Ju Seo, Structural and Optical Properties of CdO Films Deposited by Spray Pyrolysis, J Korean Phys Soc, 2004, 45,1575-1579. [7] T. K Subramanyam, S Uthanna and B Srinivasulu Naidu, Mater Lett, 1998, 35, 214–220. [8] D. M Carballeda, R CastanedoPérez, O Jiménez-Sandoval S Jiménez Sandoval, G Torres- Delgado and C. I Zúñiga- Romero, Thin Solid Films, 2000, 371, 105–108. [9] X. R. Ye, C. Daraio, C. Wang, and J. B. Talbot, J. Nanoscience and Nanotechnology, (2006) 6 [10] Z. Guo-hua, L. Ming-fang, and L. Ming-Li CEJC, 5 (2007) [11] N. Ahmed Abd, A. Raid Ismail and F. Nadir Habubi ,Journal of Materials ScienceMaterials in Electronics, 25(2014) [12] R.S. Meshram, R.M. Thombre International Journal of Bioscience, agriculture and Technology, Jan 2024 Issue 2 Vol 1 pp854 [13] K.T. Ramakrishna Reddy, G.M. Shanthini, D. Johnston, R.W. Miles, Thin solid films 427(2003) 397-400. [14] M.M. Islam, J Podder, M.R.Islam, Optoelecronics and Advanced Rapid Communication Vol. 4, No. 7, July 2010, p.968-972. [15] B.G. Jeyaprakash,K. Kesavan, R. Ashok kumar, S Mohan and A Amalarani, Bull Mater Sci., Vol. 34, No. 4, July 2011, 99. 601-605. [16] Dong Ju, Journal of the Korean Physical Society, Vol. 45, No. 6, Dec 2004, pp. 1575 [17] Swanepoel R. J. Phys. E. Sci Instrum, 16, (1983.) 1214 [18] M. Azizar Rahman , M.K.R.Khan Materials Sciencein Semiconductor Processing 24,(2014),26–33