The document is a device modeling report for the CMZB24 Zener diode manufactured by Toshiba Bee Technologies Inc. It includes details on PSPICE model parameters, reverse characteristics, and forward current characteristics with comparison measurements against simulations. The report also outlines the evaluation circuits used and presents percentage errors between measured and simulated values.

1. Device Modeling Report
COMPONENTS: Zener Diode
PART NUMBER: CMZB24
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2013
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2. PSpice model
Model description
parameter
IS Saturation Current
RS Series Resistance
IKF High-injection Knee Current
M Junction Grading Coefficient
N Emission Coefficient
XTI Saturation Current temp.exp
All Rights Reserved Copyright (c) Bee Technologies Inc. 2013
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3. Reverse Characteristic
Circuit Simulation result
100mA
10mA
1.0mA
100uA
10uA
1.0uA
100nA
0V 5V 10V 15V 20V 25V 30V
I(U1:K)
V_VR
Evaluation circuit
R1
0.01m
VR U1
CMZB24
0
Comparison Measurement vs. Simulation
Parameter Condition Measurement Simulation %Error
VZ(V) IZ=10(mA) 24.000 24.038 0.16
rd(Ω) IZ=10(mA) 30.000 29.524 -1.59
IR(uA) VR=17(V) 10.000 10.051 0.51
All Rights Reserved Copyright (c) Bee Technologies Inc. 2013
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4. Forward Current Characteristics
Circuit Simulation result
10A
1.0A
100mA
10mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(U1:A)
V_VF
Evaluation circuit
R1
0.01m
VF U1
CMZB24
0
Comparison Measurement vs. Simulation: Condition IF=0.2(A)
Parameter Unit Measurement Simulation %Error
VF V 1.200 1.200 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2013
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