This document summarizes the specifications and simulation results of a Zener diode component. It includes the part number, manufacturer, PSpice model parameters, and graphs comparing the reverse and forward characteristics of the diode from both measurements and simulations. The simulation results match the measurements well, with less than 1% error.

1. Device Modeling Report
COMPONENTS: Zener Diode
PART NUMBER: CMZB53
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2013
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2. PSpice model
Model description
parameter
IS Saturation Current
RS Series Resistance
IKF High-injection Knee Current
M Junction Grading Coefficient
N Emission Coefficient
XTI Saturation Current temp.exp
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3. Reverse Characteristic
Circuit Simulation result
100mA
10mA
1.0mA
100uA
10uA
1.0uA
100nA
0V 10V 20V 30V 40V 50V 60V
I(U1:K)
V_VR
Evaluation circuit
R1
0.01m
VR U1
CMZB53
0
Comparison Measurement vs. Simulation
Parameter Condition Measurement Simulation %Error
VZ(V) IZ=10(mA) 53.000 53.125 0.24
rd(Ω) IZ=10(mA) 85.000 84.190 -0.95
IR(uA) VR=42.4(V) 10.000 10.085 0.85
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4. Forward Current Characteristics
Circuit Simulation result
10A
1.0A
100mA
10mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(U1:A)
V_VF
Evaluation circuit
R1
0.01m
VF U1
CMZB53
0
Comparison Measurement vs. Simulation: Condition IF=0.2(A)
Parameter Unit Measurement Simulation %Error
VF V 1.200 1.200 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2013
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