This document is a device modeling report for the SIC Schottky barrier diode (part number: SCS120AE2) from Bee Technologies, Inc. It includes detailed circuit configurations, simulation results, parameter evaluations, and comparison tables for forward and reverse characteristics. The report highlights various measured values alongside simulated results with corresponding error percentages.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: SCS120AE2
MANUFACTURER: ROHM
REAMARK: POFESSIONAL MODEL

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
R2
100MEG
U1
SCS120AE2_P
NC
R1
0.01m
V1
0Vdc
0
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
1.0mA
10mA
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
0.001 0.880 0.877 -0.34
0.01 0.940 0.937 -0.32
0.1 1.000 1.000 0.00
1 1.100 1.094 -0.55
2 1.140 1.150 0.88
5 1.300 1.289 -0.85
10 1.500 1.499 -0.07
20 1.880 1.900 1.06
35 2.500 2.490 -0.40

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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0
V1
TD = 0
TF = 500ns
PW = 100us
PER = 500us
V1 = 0
TR = 10us
V2 = 600
V2
0Vdc
R1
100MEG
U1
SCS120AE2_P
NC
V(N16650)
10mV 100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/10us)
1.0pF
10pF
100pF
1.0nF
10nF
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
6
Comparison Graph
Circuit Simulation result
Comparison table
VR (V)
CT (pF)
%Error
Measurement Simulation
0.01 610.0 601.7 -1.36
0.1 580.0 579.3 -0.12
1 420.0 422.1 0.50
10 180.0 173.3 -3.72
100 70.0 71.9 2.71

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
7
V1
0Vdc
R1
100m
00
R2
100MEG
U1
SCS120AE2_P
NC
V_V1
0V 100V 200V 300V 400V 500V 600V
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
100uA
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
8
Comparison Graph
Circuit Simulation result
Comparison table
IR (uA)
VR (V)
%Error
Measurement Simulation
0.02 380 383.3 0.87
0.05 430 425.7 -1.00
0.1 465 456.2 -1.89
0.2 495 486.8 -1.66
0.5 535 528.4 -1.23
1 560 560.8 0.14
2.5 600 603.4 0.57