industrial electronics

1. SNS COLLEGE OF ENGINEERING
Kurumbapalayam (Po), Coimbatore – 641 107
An Autonomous Institution
Accredited by NBA – AICTE and Accredited by NAAC – UGC with ‘A’ Grade
Approved by AICTE, New Delhi & Affiliated to Anna University, Chennai
DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING
COURSE NAME : 19MO504 INDUSTRIAL ELECTRONICS
III YEAR / V SEMESTER MECHANICAL AND MECHATRONICS
Unit 1 – POWER SEMICONDUCTOR DEVICES
POWER TRANSISTOR (BJT)
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2. Case study
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4. IGBT
(InsulatedGate BipolarTransistor)
▶ What does word stand for…..
▶ Combination of BJT and MOSFET {[(HOW)}
▶ Lab Symbol
▶ Detailed description of symbol
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5. Constructionand BasicStructure
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6. Changing to simplifiedcircuit…
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7. WorkingAnd Operation
▶ Controlling factor: Gate
Voltage
▶ Called as voltage-controlled
BJT
▶ Inputcurrent zero at gate; as
insulated
▶ InputisMOSFET
characteristics
▶ Output isBJTcharacteristics
▶ Threshold Voltage
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8. WorkingAnd Operation
▶ npnp structure Thyristor
▶ Parasitic transistor and resistence
▶ no effect under normal operation
▶ Max collector current
▶ Parasitic transistor activates
▶ Thusparasitic thyristor activates
▶ Latch up condition dominates
▶ i.e. IGBTwill remain on
▶ Cannot controlled by gate voltage
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9. Howdo IGBTLOOKlike….
1RGT10075M12
Made in Italy
5EMK80N
Made in China
Internal Structure
A Dissectional view of
IGBT
• All of the IGBT’s related to any model do have the simplified
circuit drawn on it.
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10. Importance & Advantages of IGBTinElectrical
& Electronicsworld
▶ Combine features of MOSFET & BJTunder single device
▶ High current & High voltage SwitchingApplications, provides
safe gateway
▶ Low on state voltage drop (MOSFETpart) & High on state current
density;so smaller chip size& low cost manufacturing &
production
▶ Low voltage drop at input gate; so easilycontrolled compared to
thyristors& BJT’s.
▶ High density current conduction provides excellent forward &
reverse
blocking capabalites.
▶ Itcan be used in every electronic and electrical circuitswhere high
switch repletion isneed.
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11. Applications of IGBT’sinElectrical& Electronics
World
▶Switch Mode
Power Supplies
(SMPS)
▶ Safe controlling to work with
high voltage or high current.
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12. UninterruptiblePower
Supplies(UPS)
 Old UPSgives audible irritatingsound
 IGBTuse inUPSgives ithigh dynamic
range and low noise.
 Ex:China company HOMAGE UPS
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13. PulseWidth Modulation
(PWM)
 Increase or decrease the pulse
width according to requirement
and desire
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14. ThreePhaseDrivers
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15. SwitchingCharacteristicsof IGBT’s
▶ IGBTSwitchingTestTimeCircuit
▶ Switching Characteristics similarto Power Mosfet
▶ Difference is;tailing collector current due to storedcharge inN (negative) Drift region
▶ Tailcurrent increases turnoff loss
▶ Also increase the dead time between the two devices inhalf-bridge circuit
▶ Operates at -15Vat gate to switchoff
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16.  Turn off speed limited of IGBT (How)
Lifetime stored charge or minority carriers in N(-ve) drift-region
Base is parasitic PNP transistor
No External means to sweep the minority carriers from N(-ve) drift region
To improve Switching time N(+ve) buffer layer helps
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17. REFERENCES
1. P.S Bimbra “Power Electronics” Khannan Publisher, tird Edition, 2003
2. M.H.Rashid, “ Power Electronics Circuits, Devices and Application’’,
Pearson Education, PHI, Third Edition, New Delhi, 2004.
3. M.D.Sigh and K.B. Khachandani, “ Power Electronics”, McGraw Hill
India,2013.
THANK YOU
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18. AnyQueries
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