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David BERNARD – Resume

      Nationality: French
      Date of Birth: November 10th, 1972
      Marital Status: conjugal relationship, no children
      Address: 30, route d’Eguilles – Villa L’Amadour
                13090 Aix-En-Provence
      Email: bernarddavid4699@neuf.fr




               Management, Technical Expertise, Library Design

                                                         PROFILE
            ESD protection development and full chip ESD strategy definition/implementation
                             Standard Cell and IOs Libraries development


Profile                2008 – On going
                                          -    Project Leader (IOs Library and ESD strategy) – ATMEL, Central Engineering Team –
                                               Rousset (France)

                       2005 – 2008
                                          -    Senior Designer (IOs Library and ESD strategy) – ATMEL, Central Engineering Team –
                                               Rousset (France)

                       2001 – 2005
                                          -    Designers (IOs and Standard Cells Library) – ATMEL, Library & Design Tools
                                               Department - Rousset (France)




                                                   BACKGROUND

ESD                    Device Level
                                          -   Definition and implementation of ESD Test Structures
Field                                     -   Collaboration with T.D. for dedicated devices
Expertise                                 -
                                          -
                                              TLP results analysis
                                              Defined ESD design rules related to ESD devices for pad cell designers (T.D. and PDK
                                              collaboration)
                                          -   Defined ESD Pcells for pad cell design (PDK collaboration)

                       Cell Level
                                          -   Designed various circuit driven ESD protection (schematic, layout implementation and
                                              Electrical characterization) according to system level constraints
                                          -   Implemented ESD devices in IO Library
                                          -   Defined, managed automation and run Cell Level ESD characterization Flow
                                          -   Definition and implementation of ESD Test Bench
                                          -   Reviewed layout of all pad cells according to ESD aspect
                                          -   Defined, managed automation and run Cell level integration flow

                       Library Level
                                          -   Defined ESD Guidelines for customers regarding IOs and ESD Libraries
                                          -   Defined and implemented each ESD cell for automatic ESD safe design

                       Chip Level
                                          -   Defined and implemented relevant ESD strategy according to product constraints
                                          -   Defined, managed automation and run Chip Level ESD Verification Flow
                                          -   Run Chip Level ESD Verification and analysis on all products

                       System Level
                                          -   Defined compatibility of chip level ESD strategies with System level Test (e.g. ESD Gun)
                                          -   Defined compatibility of ESD strategies with applications constraints (security system,
                                              Tolerant pins)
IOs                  Device Level
                                      -   Defined Bonding structure according to IOs pitch and assembly constraints
Field
Expertise            Cell Level
                                      -   Definition and implementation of IOs topologies considering product aspect ratio
                                      -   Design of Standard IOs (GPIO, Open drain, Open Source, Tolerant, Compliant)
                                          (schematic, layout implementation and Electrical characterization)

                     Library Level
                                      -   Definition and implementation of IOs Library content




Std Cells            Cell Level
                                      -   Definition and implementation of standard cell topologies according to both process
Field                                     constraints and PnR constraints
Experience                            -
                                      -
                                          Definition of Compaction rule for generation of standard cells from layout
                                          Definition of Generation rules for generation of standard cells from schematic

                     Library Level
                                      -   Definition and implementation of cells with dedicated optimization (speed, power, density)




H. R.                                 -   Ph.D. Student Management

Management                            -   Local and External Engineers

                                      -   Local and External Layout Technicians




                                                  EDUCATION

                     1997 - 2000
                                      -    Ph. Thesis – LIRMM / University Of Montpellier II
                                          “Characterization and Modeling of Parasitic Interconnection Capacitances in Deep
                                          Submicron Technologies”

                     1995 - 1996
                                      -   M.S. Degree from Microelectronic Department – LIRMM / University of Montpellier II




                                               PUBLICATIONS


     US Patents Issued

     [1]     US 8,009,396 “Method and Apparatus for ESD Protection”, D. Bernard, J .J. Kazazian, A. Riviere,
             Filed in February 2008, Issued in August 2011

     [2]     US 7,760,476 “Threshold Voltage Method and Apparatus for ESD Protection”, A. Riviere, F. Demolli,
             D. Bernard, Filed in June 2007, Issued in July 2010

     [3]     US 7,570,468 “Noise Immune RC Trigger for ESD Protection”, D. Bernard, A. Riviere, Filed in June
             2007, Issued in August 2009

     [4]     US 7,180,331 “Voltage Tolerant Structure for IOs Cells”, D. Bernard, V. Gosmain, Filed in January
             2005, Issued in February 2007
Journal Papers

[1]   David Bernard, Christian Landrault, Pascal Nouet,
      “Interconnect Capacitance Modelling in a VDSM CMOS Technology” . VLSI-SOC, 133-144, Kluwer
      Academics Publisher 2001

Main Conference Papers

[1]   Antoine Riviere, David Bernard, Florence Azais, Pascal Nouet,
      "On the Use of LVTpnp in ESD Protection", International ESD Workshop, ESDa, Lake Taboe City CA,
      USA, May 2007

[2]   David Bernard, Christian Landrault, Pascal Nouet,
      "Analytical Models for Inter- and Intra-Layer Capacitance Extraction in a 0,25 µm CMOS Technology",
      SPI’2000, 4th IEEE Workshop on Signal Propagation On Interconnects, Magdeburg, Germany, May 17-
      19, 2000.
[3]   David Bernard, Christian Landrault, Pascal Nouet,
      "Interconnect capacitance monitoring and modelling in a 0,25 µm CMOS technology",
      DCIS’99, 14th Design of Circuits and Integrated Systems Conference, Palma de Mallorca, Spain,
      November 16-19, 1999, pp. 701-705.
[4]   David Bernard, Alain Toulouse, Christian Landrault, Pascal Nouet,
      "Efficient 3D Modelling for Extraction of Interconnect Capacitance in Deep Submicron Dense Layouts",
      DATE’99, Design, Automation and Test in Europe, Munich, Germany, March 9-12, 1999, pp. 576-580.
[5]   David Bernard, Pascal Nouet, Christian Landrault, Alain Toulouse,
      "Interconnects in deep sub-micron dense layouts : design and performance aspects",
      SAME’98, Sophia-Antipolis Forum on MicroElectronics, Technical Conference Proceedings, October
      29th, 1998, pp. 54-56.



                                                SKILLS
Languages: French (mother tongue), English (fluent), Spanish (knowledge)

Tools: Cadence Design Framework, Virtuoso Assura, Mentor Calibre, Spice, Eldo, Spectre, ADE, Cadence
VLM layout compactor, Synopsys Cadabra layout generator, Magma Silicon Smart, Word, Excel, PowerPoint

Programming languages: C-shell, Cadence Diva, Cadence Skill (knowledge), PERL (knowledge)


                                                  MISC

Hobby: Video Game, Enology
Music: Saxophone, Guitar Bass
Sports: Soccer (only in front of TV now)

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David Bernard Link

  • 1. David BERNARD – Resume Nationality: French Date of Birth: November 10th, 1972 Marital Status: conjugal relationship, no children Address: 30, route d’Eguilles – Villa L’Amadour 13090 Aix-En-Provence Email: bernarddavid4699@neuf.fr Management, Technical Expertise, Library Design PROFILE ESD protection development and full chip ESD strategy definition/implementation Standard Cell and IOs Libraries development Profile 2008 – On going - Project Leader (IOs Library and ESD strategy) – ATMEL, Central Engineering Team – Rousset (France) 2005 – 2008 - Senior Designer (IOs Library and ESD strategy) – ATMEL, Central Engineering Team – Rousset (France) 2001 – 2005 - Designers (IOs and Standard Cells Library) – ATMEL, Library & Design Tools Department - Rousset (France) BACKGROUND ESD Device Level - Definition and implementation of ESD Test Structures Field - Collaboration with T.D. for dedicated devices Expertise - - TLP results analysis Defined ESD design rules related to ESD devices for pad cell designers (T.D. and PDK collaboration) - Defined ESD Pcells for pad cell design (PDK collaboration) Cell Level - Designed various circuit driven ESD protection (schematic, layout implementation and Electrical characterization) according to system level constraints - Implemented ESD devices in IO Library - Defined, managed automation and run Cell Level ESD characterization Flow - Definition and implementation of ESD Test Bench - Reviewed layout of all pad cells according to ESD aspect - Defined, managed automation and run Cell level integration flow Library Level - Defined ESD Guidelines for customers regarding IOs and ESD Libraries - Defined and implemented each ESD cell for automatic ESD safe design Chip Level - Defined and implemented relevant ESD strategy according to product constraints - Defined, managed automation and run Chip Level ESD Verification Flow - Run Chip Level ESD Verification and analysis on all products System Level - Defined compatibility of chip level ESD strategies with System level Test (e.g. ESD Gun) - Defined compatibility of ESD strategies with applications constraints (security system, Tolerant pins)
  • 2. IOs Device Level - Defined Bonding structure according to IOs pitch and assembly constraints Field Expertise Cell Level - Definition and implementation of IOs topologies considering product aspect ratio - Design of Standard IOs (GPIO, Open drain, Open Source, Tolerant, Compliant) (schematic, layout implementation and Electrical characterization) Library Level - Definition and implementation of IOs Library content Std Cells Cell Level - Definition and implementation of standard cell topologies according to both process Field constraints and PnR constraints Experience - - Definition of Compaction rule for generation of standard cells from layout Definition of Generation rules for generation of standard cells from schematic Library Level - Definition and implementation of cells with dedicated optimization (speed, power, density) H. R. - Ph.D. Student Management Management - Local and External Engineers - Local and External Layout Technicians EDUCATION 1997 - 2000 - Ph. Thesis – LIRMM / University Of Montpellier II “Characterization and Modeling of Parasitic Interconnection Capacitances in Deep Submicron Technologies” 1995 - 1996 - M.S. Degree from Microelectronic Department – LIRMM / University of Montpellier II PUBLICATIONS US Patents Issued [1] US 8,009,396 “Method and Apparatus for ESD Protection”, D. Bernard, J .J. Kazazian, A. Riviere, Filed in February 2008, Issued in August 2011 [2] US 7,760,476 “Threshold Voltage Method and Apparatus for ESD Protection”, A. Riviere, F. Demolli, D. Bernard, Filed in June 2007, Issued in July 2010 [3] US 7,570,468 “Noise Immune RC Trigger for ESD Protection”, D. Bernard, A. Riviere, Filed in June 2007, Issued in August 2009 [4] US 7,180,331 “Voltage Tolerant Structure for IOs Cells”, D. Bernard, V. Gosmain, Filed in January 2005, Issued in February 2007
  • 3. Journal Papers [1] David Bernard, Christian Landrault, Pascal Nouet, “Interconnect Capacitance Modelling in a VDSM CMOS Technology” . VLSI-SOC, 133-144, Kluwer Academics Publisher 2001 Main Conference Papers [1] Antoine Riviere, David Bernard, Florence Azais, Pascal Nouet, "On the Use of LVTpnp in ESD Protection", International ESD Workshop, ESDa, Lake Taboe City CA, USA, May 2007 [2] David Bernard, Christian Landrault, Pascal Nouet, "Analytical Models for Inter- and Intra-Layer Capacitance Extraction in a 0,25 µm CMOS Technology", SPI’2000, 4th IEEE Workshop on Signal Propagation On Interconnects, Magdeburg, Germany, May 17- 19, 2000. [3] David Bernard, Christian Landrault, Pascal Nouet, "Interconnect capacitance monitoring and modelling in a 0,25 µm CMOS technology", DCIS’99, 14th Design of Circuits and Integrated Systems Conference, Palma de Mallorca, Spain, November 16-19, 1999, pp. 701-705. [4] David Bernard, Alain Toulouse, Christian Landrault, Pascal Nouet, "Efficient 3D Modelling for Extraction of Interconnect Capacitance in Deep Submicron Dense Layouts", DATE’99, Design, Automation and Test in Europe, Munich, Germany, March 9-12, 1999, pp. 576-580. [5] David Bernard, Pascal Nouet, Christian Landrault, Alain Toulouse, "Interconnects in deep sub-micron dense layouts : design and performance aspects", SAME’98, Sophia-Antipolis Forum on MicroElectronics, Technical Conference Proceedings, October 29th, 1998, pp. 54-56. SKILLS Languages: French (mother tongue), English (fluent), Spanish (knowledge) Tools: Cadence Design Framework, Virtuoso Assura, Mentor Calibre, Spice, Eldo, Spectre, ADE, Cadence VLM layout compactor, Synopsys Cadabra layout generator, Magma Silicon Smart, Word, Excel, PowerPoint Programming languages: C-shell, Cadence Diva, Cadence Skill (knowledge), PERL (knowledge) MISC Hobby: Video Game, Enology Music: Saxophone, Guitar Bass Sports: Soccer (only in front of TV now)