3. 1N4001/L - 1N4007/L
1.0A RECTIFIER
Features
Diffused Junction
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 30A Peak A B A
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data C
D
Case: DO-41, A-405
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Bright Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Mounting Position: Any
Ordering Information: See Last Page
Marking: Type Number
Weight: DO-41 0.30 grams (approximate) “L” Suffix Designates A-405 Package
A-405 0.20 grams (approximate) No Suffix Designates DO-41 Package
Maximum Ratings and Electrical Characteristics @ TA = 25 C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Notes: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1. MHz and applied reverse voltage of 4.0V DC.
3. JEDEC Value.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
4. I(AV), AVERAGE FORWARD RECTIFIED CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
1.0 10
0.8
1.0
0.6
0.4
0.1
0.2
0 0.01
40 60 80 100 120 140 160 180 0.6 0.8 1.0 1.2 1.4 1.6
TA, AMBIENT TEMPERATURE (ºC) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Current Derating Curve Fig. 2 Typical Forward Characteristics
50 100
Tj = 25ºC
f = 1MHz
IFSM, PEAK FORWARD SURGE CURRENT (A)
40
Cj, CAPACITANCE (pF)
30
1N4001 - 1N4004
10
20
1N4005 - 1N4007
10
8.3ms Single half sine-wave
JEDEC Method
0 1.0
1.0 10 100 1.0 10 100
NUMBER OF CYCLES AT 60 Hz VR, REVERSE VOLTAGE (V)
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Fig. 4 Typical Junction Capacitance
DS28002 Rev. 7 - 2 2 of 3 1N4001/L-1N4007/L
www.diodes.com
8. Philips Semiconductors Product specification
UHF variable capacitance diode BB405B
FEATURES
Excellent linearity
Matched to 3%
k a
Hermetically sealed leaded glass
SOD68 (DO-34) package
MAM159
C28: 2 pF; ratio: 8.3
Low series resistance. Cathode side indicated by a white band on a black body.
APPLICATIONS Fig.1 Simplified outline (SOD68; DO34) and symbol.
Electronic tuning in UHF television
tuners
ELECTRICAL CHARACTERISTICS
Tj = 25 C; unless otherwise specified.
Note
1. VR is the value at which Cd = 9 pF.
1996 May 03 2
9. Philips Semiconductors Product specification
UHF variable capacitance diode BB405B
GRAPHICAL DATA
MBE874
20
Cd
(pF)
16
12
8
4
0
10 1 1 10 VR (V) 10 2
f = 1 MHz; Tj = 25 C.
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MLC816 MLC815
3
10 3 10
IR TC d
(nA) (K 1 )
4
102 10
10 10 5
0 50 o 100 10 1 1 10 VR (V) 102
T j ( C)
Tj = 0 to 85 C.
Fig.4 Temperature coefficient of diode
Fig.3 Reverse current as a function of junction capacitance as a function of
temperature; maximum values. reverse voltage; typical values.
1996 May 03 3
10. Philips Semiconductors Product specification
UHF variable capacitance diode BB405B
PACKAGE OUTLINE
0.55
max
1.6 25.4 min 3.04 25.4 min
max max MSA212 - 1
Dimensions in mm.
Fig.5 SOD68 (DO-34).
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use
in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 03 4
12. BPW34, BPW34S
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
FEAT URES
• Package type: leaded
• Package form: top view
• Dimensions (L x W x H in mm): 5.4 x 4.3 x 3.2
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
94 8583
• Angle of half sensitivity: ϕ = 65
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
DESCRIPTION APPLICATIONS
BPW34 is a PIN photodiode with high speed and high radiant • High speed photo detector
sensitivity in miniature, flat, top view, clear plastic package. It
is sensitive to visible and near infrared radiation.
BPW34S is packed in tubes, specifications like BPW34.
14. TSUS4300
GaAs Infrared Emitting Diode in ø 3 mm (T–1) Package
Description
TSUS4300 is an infrared emitting diode in standard GaAs
on GaAs technology, molded in a clear, blue tinted plastic
package. Its lens provides a high radiant intensity without
external optics.
Features
High radiant power and radiant intensity
Low forward voltage
Suitable for DC and high pulse current
operation
Standard T–1(ø 3 mm) package
94 8636
Angle of half intensity = 16
Peak wavelength p = 950 nm
High reliability
Good spectral matching to Si
Applications
photodetectors
Infrared remote control systems with small package and low cost requirements in combination with silicon photo detec-
tors. Infrared source in reflective sensors, tabe end detection. Excellent matching with phototransistor TEFT4300.
Absolute Maximum Ratings
Tamb = 25 C
TELEFUNKEN Semiconductors 1 (5)
Rev. A2, 15-Jul-96
