This document summarizes the modeling of a MCR218-4FP thyristor manufactured by Motorola Semiconductor. It includes: 1) A description of the diode model used including key parameters. 2) Simulations and comparisons to measurements of the thyristor's IG-VT, ITM-VTM, and holding characteristics. 3) A simulation and comparison of the thyristor's switching times. All simulations showed good agreement with measurements within 2.5% error.

1. Device Modeling Report
COMPONENTS:THYRISTOR
PART NUMBER:MCR218-4FP
MANUFACTURER: MOTOROLA SEMICONDUCTOR
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

2. DIODE MODEL
Pspice model
Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

3. IG-VT Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation % Error
IGT (mA) 10 10.005 0.05000
VGT (V) 1.5(max) 1.4624 -2.50667
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

4. ITM-VTM Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
At ITM=16A Measurement Simulation % Error
VTM(V) 1.8(max) 1.7911 -0.49444
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

5. Holding Characteristic (IH)
Evaluation Circuit
Simulation result
Simulation
Comparison Table
VD=12V Measurement Simulation % Error
IH(mA) 16 16.230 1.43750
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

6. Switching Time Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation %Error
Ton(us) 1.5 1.5070 0.46667
Toff(us) 15 15.012 0.08000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004