This document provides a device modeling report for a Motorola MCR218-2FP thyristor. It includes: 1) A description of the diode and thyristor SPICE models used including key parameters. 2) Simulation results and comparisons to measurements for the IG-VT, ITM-VTM, and holding characteristics. 3) A switching time evaluation circuit and simulation results compared to measurements.

1. Device Modeling Report
COMPONENTS:THYRISTOR
PART NUMBER:MCR218-2FP
MANUFACTURER: MOTOROLA SEMICONDUCTOR
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

2. DIODE MODEL
Pspice model
Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

3. IG-VT Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation % Error
IGT (mA) 10 10.005 0.05000
VGT (V) 1.5(max) 1.4630 -2.46667
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

4. ITM-VTM Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
At ITM=16A Measurement Simulation % Error
VTM(V) 1.8(max) 1.7911 -0.49444
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

5. Holding Characteristic (IH)
Evaluation Circuit
Simulation result
Simulation
Comparison Table
VD=12V Measurement Simulation % Error
IH(mA) 16 15.878 -0.76250
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

6. Switching Time Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation %Error
Ton(us) 1.5 1.4981 -0.12667
Toff(us) 15 15.131 0.87333
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004