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Device Modeling Report




COMPONENTS:THYRISTOR
PART NUMBER:BT151X-500
MANUFACTURER: PHILIPS SEMICONDUCTOR




                 Bee Technologies Inc.


  All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
DIODE MODEL
 Pspice model
                                        Model description
  Parameter
       IS         Saturation Current
       N          Emission Coefficient
      RS          Series Resistance
      IKF         High-injection Knee Current
     CJO          Zero-bias Junction Capacitance
       M          Junction Grading Coefficient
       VJ         Junction Potential
     ISR          Recombination Current Saturation Value
      BV          Reverse Breakdown Voltage(a positive value)
     IBV          Reverse Breakdown Current(a positive value)
       TT         Transit Time




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
IG-VT Characteristic

Evaluation Circuit




Simulation result




                                                    Simulation




Comparison Table
                               Measurement            Simulation          % Error
           IGT (mA)                 2                   1.9834           -0.83000
            VGT (V)                0.6                 0.582525          -2.91250

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
ITM-VTM Characteristic

Evaluation Circuit




Simulation result




                                                       Simulation




Comparison Table
        At ITM=23A            Measurement            Simulation          % Error
          VTM(V)                  1.4                  1.4214            1.52857


               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Holding Characteristic (IH)

Evaluation Circuit




Simulation result




                                                    Simulation




Comparison Table
           VD=12V             Measurement            Simulation         % Error
           IH(mA)                  7                   6.9798          -0.28857


               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Switching Time Characteristic

Evaluation Circuit




Simulation result




                                              Simulation




Comparison Table
                           Measurement              Simulation           %Error
         Ton(us)                2                     2.0185             0.92500
         Toff(us)              70                     69.640            -0.51429


               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

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SPICE MODEL of BT151X-500 in SPICE PARK

  • 1. Device Modeling Report COMPONENTS:THYRISTOR PART NUMBER:BT151X-500 MANUFACTURER: PHILIPS SEMICONDUCTOR Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 2. DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 3. IG-VT Characteristic Evaluation Circuit Simulation result Simulation Comparison Table Measurement Simulation % Error IGT (mA) 2 1.9834 -0.83000 VGT (V) 0.6 0.582525 -2.91250 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 4. ITM-VTM Characteristic Evaluation Circuit Simulation result Simulation Comparison Table At ITM=23A Measurement Simulation % Error VTM(V) 1.4 1.4214 1.52857 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 5. Holding Characteristic (IH) Evaluation Circuit Simulation result Simulation Comparison Table VD=12V Measurement Simulation % Error IH(mA) 7 6.9798 -0.28857 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 6. Switching Time Characteristic Evaluation Circuit Simulation result Simulation Comparison Table Measurement Simulation %Error Ton(us) 2 2.0185 0.92500 Toff(us) 70 69.640 -0.51429 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004