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Device Modeling Report




COMPONENTS:THYRISTOR
PART NUMBER:MCR225-10FP
MANUFACTURER: MOTOROLA SEMICONDUCTOR




                 Bee Technologies Inc.


  All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
DIODE MODEL
 Pspice model
                                        Model description
  Parameter
       IS         Saturation Current
       N          Emission Coefficient
      RS          Series Resistance
      IKF         High-injection Knee Current
     CJO          Zero-bias Junction Capacitance
       M          Junction Grading Coefficient
       VJ         Junction Potential
     ISR          Recombination Current Saturation Value
      BV          Reverse Breakdown Voltage(a positive value)
     IBV          Reverse Breakdown Current(a positive value)
       TT         Transit Time




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
IG-VT Characteristic

Evaluation Circuit




Simulation result




                                                           Simulation




Comparison Table
                              Measurement             Simulation          % Error
           IGT (mA)             40(max)                   40                 0
            VGT (V)               0.8                  0.799504          -0.06200
              All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
ITM-VTM Characteristic

Evaluation Circuit




Simulation result




                                                        Simulation




Comparison Table
         At ITM=50A            Measurement           Simulation           % Error
           VTM(V)                1.8(max)              1.7969            -0.17222

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Holding Characteristic (IH)

Evaluation Circuit




Simulation result




                                                       Simulation




Comparison Table
           VD=12V              Measurement           Simulation          % Error
           IH(mA)                  20                  20.154            0.77000

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Switching Time Characteristic

Evaluation Circuit




Simulation result




                                                        Simulation




Comparison Table
                             Measurement             Simulation               %Error
           Ton(us)               1.5                   1.5269                 1.79333
           Toff(us)              15                    15.014                 0.09333


               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

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SPICE MODEL of MCR225-10FP in SPICE PARK

  • 1. Device Modeling Report COMPONENTS:THYRISTOR PART NUMBER:MCR225-10FP MANUFACTURER: MOTOROLA SEMICONDUCTOR Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 2. DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 3. IG-VT Characteristic Evaluation Circuit Simulation result Simulation Comparison Table Measurement Simulation % Error IGT (mA) 40(max) 40 0 VGT (V) 0.8 0.799504 -0.06200 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 4. ITM-VTM Characteristic Evaluation Circuit Simulation result Simulation Comparison Table At ITM=50A Measurement Simulation % Error VTM(V) 1.8(max) 1.7969 -0.17222 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 5. Holding Characteristic (IH) Evaluation Circuit Simulation result Simulation Comparison Table VD=12V Measurement Simulation % Error IH(mA) 20 20.154 0.77000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 6. Switching Time Characteristic Evaluation Circuit Simulation result Simulation Comparison Table Measurement Simulation %Error Ton(us) 1.5 1.5269 1.79333 Toff(us) 15 15.014 0.09333 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004