This document summarizes the modeling of a thyristor component. It provides the part number, manufacturer, and descriptions of the diode and thyristor models used in the simulation. The document then evaluates and compares the simulated and measured characteristics of the thyristor, including the IG-VT, ITM-VTM, holding, and switching time characteristics. Percent errors between the simulation and measurement results are provided.

1. Device Modeling Report
COMPONENTS:THYRISTOR
PART NUMBER:BT151U-650C
MANUFACTURER: PHILIPS SEMICONDUCTOR
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

2. DIODE MODEL
Pspice model
Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

3. IG-VT Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation % Error
IGT (mA) 2 2 0
VGT (V) 0.6 0.592672 -1.22133
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

4. ITM-VTM Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
At ITM=23A Measurement Simulation % Error
VTM(V) 1.44 1.4714 2.18056
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

5. Holding Characteristic (IH)
Evaluation Circuit
Simulation result
Simulation
Comparison Table
VD=12V Measurement Simulation % Error
IH(mA) 7 7.2097 2.9957
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

6. Switching Time Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation %Error
Ton(us) 2 2.0344 1.7200
Toff(us) 70 71.589 2.2700
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004