SPICE MODEL of 2SK4087LS (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: 2SK4087LS
MANUFACTURER: SANYO
REMARK: Body Diode (Model Parameters)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Transconductance Characteristic
Circuit Simulation Result
10
Measurement
9
Simulation
8
7
6
gfs(S)
5
4
3
2
1
0.0 2.0 4.0 6.0 8.0 10.0
Drain Current ID (A)
Comparison table
gfs (S)
Id(A) Error (%)
Measurement Simulation
1 2.900 3.028 4.42
2 4.100 4.230 3.16
5 6.400 6.527 1.99
10 9.000 8.988 -0.13
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4. Vgs-Id Characteristic
Circuit Simulation result
25A
20A
15A
10A
5A
0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1 V2
2SK4087LS
20
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 5.000 4.840 -3.20
2 5.300 5.115 -3.49
5 5.800 5.672 -2.22
10 6.350 6.315 -0.56
20 7.200 7.254 0.74
25 7.600 7.642 0.55
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5

6. Rds(on) Characteristic
Circuit Simulation result
7.0A
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V 3.5V
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1
2SK4087LS 0Vdc
V1
10
0
Simulation Result
ID = 7A, VGS = 10V Measurement Simulation Error (%)
R DS (on)  0.4700 0.4700 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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7. Gate Charge Characteristic
Circuit Simulation result
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
0 10n 20n 30n 40n 50n
V(W1:3)
Time*1mA
Evaluation circuit
I2
D2
U1 Dbreak 14
2SK4087LS
PER = 1000u W1
PW = 600u +
TF = 5n VDD
TR = 5n -
TD = 0 I1 W
I2 = 1m IOFF = 1mA 200
I1 = 0 ION = 0uA
0
Simulation Result
VDD=200V, ID=14A,
Measurement Simulation Error (%)
VGS=10V
Qgs nC 8.600 8.609 0.10
Qgd nC 26.400 26.391 -0.03
Qg nC 46.000 40.096 -12.83
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8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS (V) Error (%)
Measurement Simulation
20.000 221.000 220.890 -0.05
25.000 198.000 198.070 0.04
30.000 181.000 181.135 0.07
35.000 168.000 167.925 -0.04
40.000 157.000 157.245 0.16
45.000 148.500 148.380 -0.08
50.000 141.000 140.868 -0.09
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8

9. Switching Time Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us
V(U1:G) V(U1:D)/20
Time
Evaluation circuit
L2 RL
50nH 28.6
R1 L1 U1
2SK4087LS
VDD
V1 = 0 30nH 204Vdc
V2 = 20 V2 50
TD = 1u
TR = 5n R2
TF = 5n 50
PW = 10u
PER = 20u
0
Simulation Result
ID=7A, VDD=200V
Measurement Simulation Error (%)
VGS=0/10V
td(on) ns 27.000 32.159 19.11
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9

10. Output Characteristic
Circuit Simulation result
35A
15V 10V
30A
8V
25A
20A
15A
10A
6V
5A
VGS=5V
0A
0V 5V 10V 15V 20V 25V 30V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1 V2
2SK4087LS
V1 30
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. Forward Current Characteristic
Circuit Simulation Result
50A
10A
1.0A
100mA
10mA
0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(Vsense)
V_VSD
Evaluation Circuit
Vsense
0Vdc
U1
VSD 2SK4087LS
0
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12. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD(V)
IDR(A) Error (%)
Measurement Simulation
0.01 0.5500 0.5495 -0.09
0.02 0.5650 0.5679 0.51
0.05 0.5900 0.5924 0.41
0.1 0.6100 0.6113 0.22
0.2 0.6300 0.6309 0.14
0.5 0.6600 0.6590 -0.15
1 0.6850 0.6839 -0.16
2 0.7150 0.7154 0.06
5 0.7800 0.7790 -0.12
10 0.8600 0.8610 0.11
20 1.0000 0.9998 -0.02
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13. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
4us 8us 12us 16us 20us 24us 28us 32us 36us 40us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.40v V1
V2 = 10.60v
TD = 1.5us U1
TR = 10ns 2SK4087LS
TF = 10ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 800.000 800.304 0.04
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13

14. Reverse Recovery Characteristic Reference
Measurement
Trj=800(ns)
Trb=880(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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