1. Tsai Cheng Wen
1F., No.4, Ln. 39,
Houzhuwei St.., Sanchong Dist, New Taipei City 241
806, Taiwan (R.O.C.)
+886-920-845940
edison1029@gmail.com
Education
 Master of Science, Sept. 2003 - June 2005
Institute of Electro-Optical Engineering, Chang Gung University, Taoyuan 333, Taiwan
ROC
 Bachelor of Science, Sept. 1999 - June 2003
Department of Physics, National Tamkang University , Taiwan, R.O.C.
Work Experience
Sanan Corporation, Jan. 2013 - Aug. 2016 (Tianjin , CN)
Title : GaAs Engineering Center R&D Engineer
 Development New Epi structure
 Patent research & Drafting
 New Epi structure pilot run & mass production
 Handle the Customer Claim
 Specialize in MOCVD (Aixtron, Veeco)
 Product performance enhance (570nm&590&610nm&660nm&850nm&940nm)
Epilight Corporation, Dec. 2011 - Nov. 2012 (Hefei , CN)
Title : Chief Epi Engineer
 Assist New Epi factory building
 Veeco K475 & Aixtron 2800G4 move in and set up
 AlGaInP product(570nm to 620nm) pilot run and mass production
 Training Engineer & Operater and draw up Production SOP
EPISTAR Corporation, Jan. 2008 - Sep. 2011( Hsinchu , TW)
Title : Assistant Manager
 Raise Product’s yield y
 Enhance the LED Power
 Administer instrument fo the measurement (ex : PL instrument, ECV )
 Handle the Customer Claim

2.  Specialize in MOCVD (Aixtron, Veeco)
 Cost down
LITEON Corporation, April. 2006 - Oct. 2007( New Taipei city , TW)
Title : Product Design Engineer
 Design Power Flash product.
 Enhance Product yield.
 Design Production process and mass production.
 Handle the Customer Claim
Work Project
 Products design Jun. 2006 - Jun. 2007
 Patent research Feb. 2007 - Oct. 2007
 Handle OEM order Feb. 2008 – Apr. 2009
 MOCVD upgrade and mass production Oct. 2009 – Dec. 2010
 Enhance HR type UHB LED Power Jun. 2010 – Dec. 2010
 Solve and enhance Veeco E400 system quality Apr. 2011 – Aug. 2011
 Assist Epi Factory building & MOCVD move in & MP Dec. 2011 – Nov. 2012
 Product performance enhance Jan. 2013 – Dec. 2013
 Development New Epi structure Jan. 2014 – Dec. 2014
 New Epi structure pilot run & mass production Jan. 2015 – Dec. 2015
Patent
带有掺杂的多层量子阱多元化合物半导体高效率发光组件
Journal
• Investigation the effect of Super lattice on the behavior of threading dislocation in
GaN thin film (The Joint Fifth International Conference on Solid State Crystals 2007) (2nd
author)
• GaN/Si(111) Epilayer Based on Low Temperature Al/N and AlGaN/GaN Superlattice
for Light Emitting Diodes (OPTICS LETTERS, 2005) (2nd author)
Computer Skills
Microsoft Excel, Microsoft Word, Microsoft Power Point
Language Skills
English
Mandarin Chinese
Taiwanese