1. JIMMY HSU
Name:Jimmy C.M. Hsu
TEL:+886.936.659679
DOB: 1978.01.11
Email: JimmyHsu168@gmail.com
ADD: No.8 Lane40, YongNing Street, SinFong Township,
Hsinchu, Taiwan
SENIOR LEVEL APPLICATON/PROCESS/SERVICE
Senior customer service with more than 8 years of experience process tuning, field
application and equipment maintenance for both semiconductor and solar industry.
QUALIFICATIONS OF SUMMARY
High-performing Process/Application/Service with expertise in Solar and
Semiconductor.
Professional knowledge in semiconductor materials especially in solar/semi
industry.
Well known Taiwan Solar/Semiconductor industrial chain
Strong communication skill and know how to build a good relationship with
customer.
Sensitive for new technical improvement
Customer management and know how to provide on-site or remote support.
Good presentation skill
Well mechanical troubleshooting skill and hands on
Working leadership, working independent, Self-motivated.
AREAS OF EXPERTISE
•Solar Cell Process •Silicon Materials Properties •Semiconductor process
•Process management •Hands on mechanical •Data collection and analysis
•Materials/process development •Acceptance Test •Customer Management
•Marketing information •Laser process •New potential customer development
English Qualify:TOEFL CBT:217(Writing:6, 1~6)
OVERSEA SUPPORT AND WORKING
1. Delft University of Technology,Netherlands---Researcher—6 months.
2. US Texas Instruments(TI),Field Support—1 month
3. Singapore Chartered Semiconductor, Field Support—2 months.
4. China Solar Cell industry installation, Process/Service Support—2 months.
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2. JIMMY HSU
PROFESSIONAL EXPERIENCE: 8yrs
2009 ~ Now Ultratech Inc. —Sr. Engineer, Laser Spike Annealing
Now •Provide both on-site and remote applications support to customers.
•Assist customer to solve problems related to application of the product to
customer』s manufacturing process.
•Evaluate engineering upgrades and other product proposals submitted by
development Engineering to determine practicality and usefulness of the
application by customers.
•Participating on machine acceptance test.
•Attending and participating sales meeting, product seminar and training event.
(Working Place: Hsinchu/Tainan): TSMC/UMC
2008 ~2009 OTB Solar BV, Sr. Process Engineer
Process Engineer in-charge PECVD and Turnkey line of Solar Cell.
Crystalline Silicon Turnkey line process improvement. PECVD process tuning
•Process tuning at c-Sil Solar Cell.
•Provide customer training.
•Troubleshooting at Solar cell process issue.
•Customer Acceptance Test.
•Assist sales/marketing present state-of-art solar equipment.
•Attending trade show
http://www.otb-solar.com/ (Working Place: Netherlands/China)
2006 ~ 2008 Ultratech Inc. —Field Service Engineer, Laser Spike Annealing
•Perform preventive and corrective maintenance of complex mechanical
equipment.
•Instructs customers in the proper operation and maintenance of the system.
•Install upgrades and retrofits as they may become available.
•Serves as company liaison with customer on administrative and technical
matters for assigned projects.
http://www.ultratech.com/ (Working Place: Tawain/Sigapore)
2005 ~ 2006 Delft Institute for Micro-Electronics and
Submicrontechnology(DIMES),Netherlands— Visiting Researcher
Research topics: Low-temperature Poly-Silicon formation using Laser, to study
silicon grain size, annealing temperature and others Laser annealing for
poly-silicon.(a-Si:H poly-Si). Main applications are Low-Temperature Poly-Si
TFT and 3D ICs.
http://www.dimes.tudelft.nl/ (6 Months) (Working Place: Netherlands)
2002 ~ 2005 Industrial Technology Research Institute(ITRI) —Associate
Researcher
To develop new applications of Carbon Nanotubes using plasma CVD and
Plasma Jet technique. For example: Carbon Nanotubes Field Emission Display,
Siliver paste use Carbon Nanotubes. Using Laser to deposit and grow Carbon
Nanotube. Carbon Nanotube’s surface treatment using CO2 Laser.
http://www.itri.org.tw/ (Working Place: Hsinchu)
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3. JIMMY HSU
EDUCATION
School Degree Duration
National Tsing Hua University, Department of PhD 2009.09~ Now
Materials Science and Engineering
candidate
Major: Solar Cell and Semiconductor Materials
National Chaio Tung University, Department of Master 2000/09 ~ 2002/06
Materials Science and Engineering
Major: Materials Science and Engineering and
Semiconductor
National Taiwan Normal University, Department of Bachelor 1996/09 ~ 2000/06
Industrial Education
Major: Engineering in Materials
National Hsinchu Vocational Junior High School 1993/09 ~ 1996/06
Major: Mechanical and Electric
BS:80.68/100, Ranking: 11/45
Score:
MS : 87.93/100, Ranking: 9/50
PERSONAL PATEN
1. Taiwan Paten No: 255791:The method of producing high surface area and
high conductive carbon materials.
2. Taiwan Paten No: 290333:A Method of produce field emission source.
3. Taiwan Paten No: 230204:A method of selective deposition carbon structure
on the silicon,
PROSEESIONAL EQUIPMENT SKILL
Materials Analysis Instrument
TEM (JEOL JEM-2000FX, -4000EX, Philips TECNAI 20), FE-SEM (Hitachi S-4300,
S-4700, LEO-1530), SPM (Digital Instruments DI 3000), AUGER (Physical Electronics,
Auger 670 PHI Xi), RAMAN (Renishaw 2000), IV/CV (Keithley-6517,237), 4-point Probe
(Napson RT-7), XRD (Siemens D-5000, Philips PW1700).
Semiconductor Equipment Techniques
E-Beam Review(KLA-Tencor). Laser Thermal Annealing(Ultratech), ECR-CVD (ASTeX
PDS-17 System), Thermal Evaporation Coater (ULVAC EBX-6D), Dual E-Gun
Evaporation System (ULVAC EBX-10C), Sputtering System (Ion Tech Microvac 450CB),
Plasma Jet. Microwave Plasma CVD (MPCVD), Arc Discharge.
Mechanical Process Techniques
Lathe, Miller, Bench work, Thermal treatment, CAD.
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4. JIMMY HSU
TRAINING
Solar Cell Process Training
Semiconductor Yield Management
Laser process
Semiconductor Quantum Device, September 2002 - April 2003 (84 hrs)
Introduction of Quantum Mechanism, September 2002 - December 2003 (42 hrs)
Research Assistant - National Nano Device Laboratories, September 2000 - June 2002
Advanced Electronic Device Materials, September 2001 - January 2002 (52 hrs)
Patent-relative course, July 2001 – Present
Processing for Microelectromechanical System Technology, August 2001 (30 hrs)
Research and Study of Transmission Electron Microscopy Technique, August 2001 (30
hrs)
Processing Issues for Wireless Communication Component Materials, March 2001 - May
2001 (42 hrs)
Deep-Submicron Process Technology, February 2001 - May 2001 (24 hrs)
Failure Analysis of Semiconductor Materials, December 2000 - March 2001 (30 hrs)
Advanced Processing Equipment - National Nano Device Laboratories, August 2000 (14
hrs)
Advanced Processing for VLSI Technology - National Nano Device Laboratories, July
2000 (30 hrs)
INVOLEVED PROJECT
E-Beam Review
Laser Spike Annealing
Low Temperature Poly-Silicon TFT
New Solar Cell Materials Development.
The electrode materials of direct methanol fuel cell (DMFC) development.
The application of highly conductive carbon nanotubes in energy.
The process technique of carbon nanotubes paste.
Speed up industrialization of CNTs display.
Carbon nanotubes growth by using the plasma-enhanced chemical vapor deposition and
plasma jet process.
The production of high surface area nano-sized carbon carries and a diversity of catalysts
use arc discharge.
The purification of carbon nanotubes for CNT-FED application.
Plasma jet of carbon nanotubes field emission devices.
Application of nanotemplate—synthesis and addressing.
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5. JIMMY HSU
WORKING DESCRIPTION
http://www.otb-solar.com/
My job function is process tuning and service customer around the ROA. Aim sales to
promote photovoltaic equipment and increase revenue.
1. Working with clients and vendors to prepare project concept reports.
2. Process flow balances and ability to use process
3. Play a lead role in planning and execution of equipment commissioning. FAT..
4. Play a key role in several areas related to Process Readiness: Process definition,
development of process validation strategy and review of PV protocols, review of
manufacturing batch records
OTB Solar offers solar cell manufacturing equipment that bring a market-oriented and
sustainable response to the challenges of the global energy demands. Our equipment with
integrated process technology enables the solar industry to produce solar cells at lowest
cost/MW: by decreasing production costs, increase efficiency, improve product consistency
and guarantee production volume
http://www.ultratech.com/
My job function was technical transfer to customer site like tsmc,umc in Taiwan. The
company's products are Laser spike annealing and stepper for package. My daily job was
application/service support at TSMC FAB12.
1. Provide or drive solutions for process related customer escalation issues about installation,
qualities and productivity.
2. Work as focal window for customer s process engineer of process related functions.
3. Organize and present newest technology information and collaborate with sales
representative, FSE or other appropriate staff to provide most efficient means of satisfying
customer needs.
4. Provide competitive analysis from process standpoint on both specifications and
productivity performance of our product to assist in sales penetration.
5. Discuss with customer to define technical criteria leading to appropriate and effective
demonstration of potential prospects, and also facilitate better planning of the demo
events.
6. Provide product performance information data from fab and distilled technical inputs by
attending professional seminar or training to help drive engineering/process/technology
priorities and development
Ultratech's advanced Laser Spike Annealing (LSA) technology enables continued device
scaling and eliminates bottlenecks associated with transistor channel engineering. The main
challenges regarding short channel effects include achieving maximum activation and minimal
diffusion with abrupt junctions.
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6. JIMMY HSU
http://ectm.et.tudelft.nl/
Delft Institute for Micro-Electronics and Submicrontechnology
(DIMES),Netherlands
I had training and worked at Delft Institute of Microelectronics and Sub-Micro Technology in
the Netherlands. In there, Main working was research on Thin Film Transistors and took the
training course in the clean room pursuing semiconductor process. Furthermore, I was able to
solve laser annealing and the relationship between the growth of poly-silicon by CVD/PVD
and laser energy, as well as the development of copper interconnections. Finally, to
recrystallize thin silicon films with an excimer laser and characterize the crystal
defects and grain boundaries with spatial resolved capacitance measurements. The
influence of the crystal orientation and of the boundaries between the crystals on
transistor leakage current will be determined and analyzed.
Industrial Technology Research Institute
http://www.itri.org.tw/eng/index.jsp
Develop nano materials for different industry application:
Honor&Award:
Referee, American Vacuum Society 50th Symposium, March 2004
–Review the manuscript in field of carbon nanotubes.
Recipient, ITRI Advanced Research Award in Fuel Cell, February 2004
–Awarded to researcher with Top 1%. -Out of 6000 researchers.
Recipient, ITRI Preeminent Research Award in Carbon Nanotubes, February 2003
–Awarded to researcher with Top 1%. -Out of 6000 researchers.
Recipient, National Science Council Award for Master's Thesis, December 2002
–Awarded to graduate students with Top 1%, a grant of US$ 20,000. –Out of 2000
materials students.
Recipient, Taiwan Foundrymen's Association Distinguished Student Scholarship,
December 1999
–Awarded to undergraduate students in Materials field with Top 1%.
Recipient, Xing-Long Outstanding Student Scholarship, June 1999
–Award to undergraduate students in Mechanical field with Top 3%.
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7. JIMMY HSU
JOURNAL
1. H. L. Chang, C. M. Hsu and C. T. Kuo, “Forming silicon carbon nitride crystals and silicon
carbon nitride nanotubes by microwave plasma-enhanced chemical vapor deposition”,
Appl. Phys. Lett., 80 (2002) 4638-4640
2. C. M. Hsu*, C. H. Lin, H. L. Chang and C. T. Kuo, “Growth of the large area
horizontally-aligned carbon nanotubes by ECR-CVD”, Thin Solid Films, 420-421, (2002)
225-229
3. C. H. Lin, H. L. Chang, C. M. Hsu, A. Y. Lo and C. T. Kuo, “The role of nitrogen in carbon
nanotube formation”, Diamond and Relative Materials, 12 (2003) 1581-1587
4. C. M. Hsu*, H. J. Lai and C. T. Kuo, “Growth behavior and interfacial reaction between
carbon nanotubes and Si substrate”, J. Vac. Sci. Tech. A., 22 (2004) 1461-1465
5. C. H. Lin, S. H. Lee, C. M. Hsu and C. T. Kuo, “Comparisons on properties and growth
mechanisms of carbon nanotubes fabricated by high-pressure and low-pressure
plasma-enhanced chemical vapor deposition” Diamond and Relative Materials, 13 (2004)
2147-2151
6. C. M. Hsu*, C. H. Lin, H. J. Lai and C. T. Kuo, “Root growth of multi-wall carbon nanotubes
by MPCVD”, Thin Solid Films, 471 (2005) 140-144
7. H. J. Lai, B. J. Li, C. M. Hsu and S. C. Kung, “奈米碳管場發縳射材料在平面顯示器之應用
發展”, 電子與材料雜誌, Vol.18, (2003) 101-108
8. Y. L. Chueh, L. J. Chou, C. M. Hsu and S. C. Kung, “Synthesis and characterization of
metallic TaSi2 Nanowires”, Applied Physics Letter, 87, 223113 (2005)
9. Y. L. Chueh, L. J. Chou, C. M. Hsu, and S. C. Kung, “Synthesis and Characterization of
Taper- and Rodlike Si Nanowires on SiXGe1-X Substrate”, J. Phys. Chem. B, 2005
ATTENDING CONFERENCE
1. C. M. Hsu*, C. H. Lin, H. L. Chang and C. T. Kuo, “Growth of the large area
horizontally-aligned carbon nanotubes by ECR-CVD”, ICMCTF’02 Symposium, San Diego,
CA, Apr. 22-26, (2002)
2. C. H. Lin, H. L. Chang, C. M. Hsu, A. Y. Lo and C. T. Kuo, “The role of nitrogen in carbon
nanotube formation”, 8th International Conference on New Diamond Science and
Technology, (ICNDST-8), Victoria, Australia, July 21-26 (2002)
3. H. J. Lai, B. J. Li, C. C. Lin, C. M. Hsu, C. R. Lin and A. K. Li, “Field Emission Properties of
Carbon Nanotubes Synthesized by Arc Method and CVD Method”, International Display
Manufacture Conference (IDMC’03), Taipei, Taiwan, Feb. 18- 22, (2003)
4. C. M. Hsu*, C. H. Lin, H. J. Lai and C. T. Kuo, “Root growth of multi-wall carbon nanotubes
by MPCVD”, ICMCTF’03 Symposium, San Diego, CA, Apr. 29- May 3, (2003)
5. C. H. Lin, S, H. Lee, C. M. Hsu, M. H. Tsai and C. T. Kuo, “Electric field induced carbon
nanostructures for electronics and high surface area applications”, MRS Spring meeting,
San Francisco, CA, Apr. 21-25, (2003)
6. H. J. Lai, S. C. Kung, C. M. Hsu, B. J. Li, C. C. Lin and C. J. Lin, “Field Emission
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8. JIMMY HSU
Properties of Carbon Nanotubes Synthesized by High Temperature Arc Method and Low
Temperature CVD Method”, MRS Spring meeting, San Francisco, CA, Apr. 21-25, (2003)
7. C. M. Hsu*, H. J. Lai and C. T. Kuo, “Growth behavior and interfacial reaction between
carbon nanotubes and Si substrate”, 50th International Symposium of the American
Vacuum Society (AVS), Baltimore, MD, Nov. 2-7, (2003)
8. S. C. Kung, C. M. Hsu*, B. J. Li, C. J. Lin and H. T. Lai, “Growth of Cone-shaped Carbon
Nanotubes by Arc Discharge in Anode”, 50th International Symposium of the American
Vacuum Society (AVS), Baltimore, MD, Nov. 2-7, (2003)
9. C. T. Kuo, C. H. Lin, S. H. Lee and C. M. Hsu, “Comparisons of the carbon nanotubes
properties and growth mechanism with by high pressure and low pressure plasma
enhanced chemical vapor deposition”, 9th International Conference on New Diamond
Science and Technology, (ICNDST-9), Tokyo, Japan, March 26-29, (2004)
10. H. J. Lai, C. M. Hsu, S. C. Kung, C. C. Lin and R. Chang, “Catalyst-free synthesis of
multi-walled carbon nanotubes from carbon nanopowders”, 9th International Conference
on New Diamond Science and Technology, (ICNDST-9), Tokyo, Japan, March 26-29,
(2004)
11. B. J. Li, S. C. Kung, C. M. Hsu, J. Y. Gao and H. J. Lai, “Preparation of A New Carbon
Nano-particle by Arc Discharge”, MRS Spring meeting, San Francisco, CA, Apr. 12-16,
(2004)
12. H. J. Lai, S. C. Kung, C. M. Hsu, B. J. Li, C. C. Lin and A. K. Li, “Catalyst-Free Synthesis
of a Carbon-Nanotube Emitter for FEDs”, Society for Information Display Symposium,
SID’04, Seattle, WA, May 23-28, (2004)
13. H. J. Lai, C. M. Hsu, S. C. Kung, C. F. Lin, J. M. Chiou and A. K. Li, “A Carbon-Nanotube
Flat Lamp for LCD Backlight”, IUMRS International Conference in Asia (IUMRS-ICA-2004),
Hsinchu, Taiwan, Nov. 16-18 (2004)
14. S. C. Kung, C. M. Hsu, B. J. Li, K. L. Hsueh and H. J. Lai, “Synthesis and characterization
of carbon nanoparticles by electric arc-discharge”, IUMRS International Conference in
Asia (IUMRS-ICA-2004), Hsinchu, Taiwan, Nov. 16-18 (2004)
15. H. J. Lai, C. M. Hsu, S. C. Kung, C. F. Lin, J. M. Chiou and A. K. Li, “The Characteristics of
Carbon-Nanotube Flat Light Source for Backlight Applications”, The 1st International
Conference on One-Dimensional Nanomaterials (ICON), Taipei, Taiwan, Jan. 10-14
(2005)
16. C. M. Hsu*, S. C. Kung, B. J. Li, K. L. Hsueh and H. J. Lai, “Growth of Carbon NanoBud by
Arc Discharge”, The 1st International Conference on One-Dimensional Nanomaterials
(ICON), Taipei, Taiwan, Jan. 10-14 (2005)
17. S. C. Kung, C. M. Hsu, B. J. Li, and H. J. Lai, “Carbon Nanostructures by Cathodic Arc
Discharge", The 1st International Conference on One-Dimensional Nanomaterials (ICON),
Taipei, Taiwan, Jan. 10-14 (2005)
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