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International Journal of Trendy Research in Engineering andTechnology
Volume 4 Issue 6 Oct’ 2020
ISSN NO 2582-0958
______________________________________________________________________________________________________________
www.trendytechjournals.com 6
Growth & characterization of Langasite crystals for SAW device
applications
N.Marimuthua
, P.Suresh Kumarb
*, R.B.Upadhyayc
a
.Department of Physics, Bharth University,Chennai , b
Former Professor, Velammal Engineering College, Chennai-
600 066, Tamil Nadu, India
c
Space application centre, Ahmedabad, Gujarat, India
*Corresponding author – suresrath@yahoo.com
Abstract
LGS crystal which melts congruently at 1470⁰C has been grown by Czochralski method. The langasite
crystal of length about 1cm grown along its Z-axis was cut in X and Y directions , polished and
subjected to various characterization studies. Phase and structure of the grown crystal was confirmed by
Powder XRD measurement. FTIR spectrum was carried out to confirm the functional groups present in
the grown crystals. The optical behavior was studied by UV–vis-NIR analysis. Electrical properties such
as Dielectric constant, Resistivity, Conductivity and Piezoelectric coefficient have also been studied.
Keywords:Langasite, Czocharlski technique, Piezoelectric ,SAW device,
Introduction
Piezoelectric materials play a very important
role in the modern industry. The most widely
spread products of piezoelectric engineering is
radio frequency (RF) control elements
(resonators) and selection (filters)[1, 2]. The
main material used in piezoelectric engineering
is quartz which is having highly stable
frequency-temperature characteristics and is the
reason for its application in resonator
production. One of the piezoelectric materials
with high K2
emcis lithium tantalate, enabling to
design wide band filters. However, due to the
low frequency-temperature stability and the low
quality factor (Q) of resonators made of this
material the application of these filters is
limited. Langasite(LGS) crystal belongs to
piezoelectric materials with the value of
electromechanical coupling coefficient
intermediate between quartz crystal and that of
lithium tantalate. LGS has attracted increasing
attention because of its excellent properties in
applications of surface acoustic wave, bulk
acoustic wave, and sensors fields[3,4]. An
important feature of LGS is that it undergoes no
phase transitions up to its melting point, which
stimulates the development of langasite- based
piezoelectric sensors[5,6]. In the present work
LGS crystal has been grown by Czochralski
method and subjected to XRD, FTIR, UV and
Electrical characterization.
II. Synthesis
The LGS polycrystalline material synthesis was
carried as per the following reaction
3 La2O3 + 5 Ga2O3 + 2 SiO2 ------- 2
La3Ga5SiO14
The synthesis of LGS has been carried out by
solid state sintering method from precursors of
99.99% pure La2O3, Ga2O3 and SiO2 weighed
according to stoichiometry ratio and then well
mixed in a planetary mill for 6 hours. To
compensate the loss of Ga by volatisation at
high temperature excess amount of Ga was
taken. Mixtures were then pressed at 10 kgf/cm2
to pellets and sintered for 12 h at 11000
C.The
polycrystalline LGS pellet is shown in Figure 1.
International Journal of Trendy Research in Engineering andTechnology
Volume 4 Issue 6 Oct’ 2020
ISSN NO 2582-0958
______________________________________________________________________________________________________________
www.trendytechjournals.com 7
Fig.1.The prepared Polycrystalline LGS
pellet
Growth of Langasite crystal
Langasite crystal was grown along its Z-axis by
the conventional Czochralski technique. Initially
polycrystalline LGS pellets were charged into
Pt/10%Rh crucibles of 50 mm diameter and 50
mm height. Pellets of LGS weighing 150 g
which is much less than the volume of the
crucible were taken in the crucible in order to
avoid overflow of material from the crucibles
when the pellets are molten. The crucible was
then placed on a crucible holder which can be
moved vertically along the furnace axis, thus
allowing an appropriate positioning of the
crucible within the temperature gradient of the
furnace. The basic process was to melt the
pellets completely and then to cool it to observe
the exact crystallization temperature of the
material for the present setup. Charge was
heated to 1600 0
C , held at that temperature for
3 h for complete melting and then cooled down
slowly to find the solidification temperature.
After several runs the crystallization
temperature was found to be 1480°C, and a
polycrystalline seed crystal (Figure 10) was
introduced at this temperature so as to initiate
the growth process by pulling and simultaneous
rotation of the seed rod. A pulling rate of 0.5-3
mm/h and rotation rate of 5-40 rpm were
maintained during growth process. The as
grown single crystal of size 38x22x9 mm is
shown in figure 2a.The X and Y cut crystal are
shown in fig.2b.
Fig. 2. Photograph of grown LGS crystal
IV. Characterization
i) X-ray diffraction study
Powder X-ray diffraction analysis of the
polycrystalline LGS prepared by solid state
reaction method and LGS crystal was carried
out using PANalytical-X-ray diffractometer in
the range 10 - 70° to confirm the structure and
phase. The Kα radiations from a copper target (λ
= 1.5406 Ǻ) was used.The Powder-XRD
spectrum of polycrystalline LGS and LGS
crystal are shown in Figure 3. From the Powder-
XRD spectrum, the formation of LGS phase and
structure was confirmed. The calculated cell
parameter values are a=8.1624 , c=5.093. The
diffraction pattern well agreed with the data of
standard for LGS (JCPDS No: 72-2249).
Fig.3. The Powder-XRD spectrum of
polycrystalline LGS crystal (a) and Grown LGS
crystal (b)
International Journal of Trendy Research in Engineering andTechnology
Volume 4 Issue 6 Oct’ 2020
ISSN NO 2582-0958
______________________________________________________________________________________________________________
www.trendytechjournals.com 8
UV-Vis-NIR absorption spectrum
The absorption spectrum of Langasite crystal
was recorded using Lambda 35 UV Winlab
Spectrometer. The UV spectrum was recorded
between 400 to 1100 nm. The recorded
absorption spectra of Langasite crystal is shown
in Figure 4. The absorption edge was observed
in the range 500 - 600 nm.
Fig.4
UV
reflected spectrum of LGS crystal
FTIR Analysis
Figure 5 shows the From the FTIR spectra of the
sample shown in figure 5 the functional groups
are analyzed taking into account the molecular
structure of the material. The peak at 450 cm-1
is
assigned to the O-La-O stretch. The absorption
bands in the region of 575 cm-1
are due to O-Si-
O stretching mode. Stretching at 628 cm-1
and
735 cm-1
are the evidence for the existence of
Ga-O group. The band at 675 cm-1
signifies the
La-O stretching vibration. The Si-O stretching
vibration obtained at 779 and 879 cm-1
.
Fig.5 FTIR recorded spectrum of LGS crystal
Dielectric studies
Frequency dependence of dielectric constant for
Langasite crystal in the frequency range 100
Hz to 3 MHz at 313 Kis shown in figure 6. It is
observed that dielectric constant is high at low
frequency which is due to the contribution of
various polarization[7]. At high frequencies,
only electronic polarization with large relaxation
time exists and all other polarizations cease[8].
Hence the net dielectric constant decreases as
frequency increases. The dielectric constant for
the Langasite crystal at 1MHz was calculated
found to be 8.87.
Fig.6 Frequency dependence of dielectric
constant for LGS crystal at 313 K
International Journal of Trendy Research in Engineering andTechnology
Volume 4 Issue 6 Oct’ 2020
ISSN NO 2582-0958
______________________________________________________________________________________________________________
www.trendytechjournals.com 9
Tangent loss (tanδ) found to have higher value
at low frequency and decreases with increasing
frequency, illustrating the relaxation process.
The higher dielectric loss that occurs at lower
frequency may be due to an accumulation of
free charge. The polar ionization which occurs
due to the charge accumulation of decreases,
leads to a decrease in the value of the dielectric
loss.
Fig.7 Frequency dependence of dielectric loss
for LGS crystal at 313 K
AC conductivity
Figure 8 shows the frequency dependence of
AC conductivity (σac) at 313 K for Langasite
crystal. The AC electrical conductivity (σac) of
the LGS crystal was calculated from the
following equation,
σac =ωɛrɛ0tanδ
where ω (=2πf) is the angular frequency, f is the
applied frequency. From fig.8, it is clear that the
conductivity is independent of frequency at low
frequency region whereas above the
characteristic frequency the conductivity
increases with increase in frequency. The high
conductivity at higher frequencies confirms the
short-range intrawell hopping of charge carriers
between localized states[9].
Fig.8 Frequency dependence of AC conductivity
for LGS crystal at 313 K.
Piezoelectric studies
The piezoelectric coefficient (d33) was measured
for the grown Langasite crystal using APC USA
make YE2730A model d33 meter. The
Piezoelectric coefficient of Langasite crystal was
found to be 5 pC/N.
Conclusion
Langasite single crystal of length 1cm was
grown by Czochralski technique . The structure
of LGS was confirmed by powder XRD. UV-
Vis –NIR absorption spectrum shows absorption
edge at 525 nm. The various functional groups
present in the crystal were confirmed by FTIR
analysis. The dielectric measurements show that
the dielectric constant and dielectric loss
decreases with increase in frequency. The AC
conductivity values found to have higher values
at high frequency. Piezoelectric coefficient of
the crystal was found to be 5 pC/N.
International Journal of Trendy Research in Engineering andTechnology
Volume 4 Issue 6 Oct’ 2020
ISSN NO 2582-0958
______________________________________________________________________________________________________________
www.trendytechjournals.com 10
Acknowledgement
Author wish to acknowledge the financial
support from ISRO for carrying out this research
(ISRO/RES/3/664/2014-15)
References
[1] H. Fritze and H.L. Tuller, Langasite for
High-Temperature Bulk Acoustic Wave
Applications. Appl. Phys. Lett., 78, 976-
977 (2001)
[2] JorgenRodel, WookJo, KlausT.P.Seifert,
Eva-MariaAnton, TorstenGranzow,
Damjanovic, Perspective on the
development of lead-free piezo
ceramics.J.Am.Ceram.soc. 92, 1153–
1177 (2009)
[3] A. N. Gotalskaya, D. I. Drezin, V. V.
Bezdelkin. V. N.
Stassevich,Pecularities of technology,
physical properties and applications of
new piezoelectric material
langasite.IEEE International
Frequency Control Symposium, 6,
339–347(1993)
[4] B. V. Mill, Yu. K.
Pisarevsky, Langasite-type materials:
from discovery to present state, IEEE /
EIA International Frequency Control
Symposium and Exhibition. 23, 133–
144(2000)
[5] R. Fachberger, G. Bruckner, G. Knoll, et
al, “Applicability of LiNbO3, langasite
and GaPO4 in high temperature SAW
sensors operating at radio frequencies,
IEEE Trans. Ultrason. Ferroel. Freq.
Contr., 51, 1427-143 (2004)
[6] M. Schulz, D. Richter, and H. Fritze,
Material and resonator design dependant
loss in langasite bulk acoustic wave
resonators at high temperatures, Proc.
IEEE Interl. Ultrason.Symp, 2, 1676-
1679 (2009)
[7] A. Ashok, T. Somaiah, D. Ravinder, C.
Venkateshwarlu, C. Reddy, K. Rao, M.
Prasad, Electrical properties of cadmium
substitution in nickel ferrites. World J.
Condens. Matter Phys. 2, 257–266
(2012)
[8] K. TamizhSelvi, K. Alamelumangai, M.
Priya, M. Rathnakumari, P. Suresh
Kumar, Suresh Sagadevan “Studies on
synthesis, structural, surface
morphological and electrical properties
of Pr6O11–MgOnanocomposite” J
Mater Sci: Mater Electron.27, 6457–
6463 (2016)
[9] A.K. Abdul Gafoor , M.M.Musthafa,
P.P.Pradyumnan “Effect of Nd3+
Doping on Optical and Dielectric
Properties of TiO2 Nanoparticles
Synthesized by a Low Temperature
Hydrothermal Method” Jr. of Nano
Science and Nano Technology 1, 53-57
(2012)

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Growth & characterization of Langasite crystals for SAW device applications

  • 1. International Journal of Trendy Research in Engineering andTechnology Volume 4 Issue 6 Oct’ 2020 ISSN NO 2582-0958 ______________________________________________________________________________________________________________ www.trendytechjournals.com 6 Growth & characterization of Langasite crystals for SAW device applications N.Marimuthua , P.Suresh Kumarb *, R.B.Upadhyayc a .Department of Physics, Bharth University,Chennai , b Former Professor, Velammal Engineering College, Chennai- 600 066, Tamil Nadu, India c Space application centre, Ahmedabad, Gujarat, India *Corresponding author – suresrath@yahoo.com Abstract LGS crystal which melts congruently at 1470⁰C has been grown by Czochralski method. The langasite crystal of length about 1cm grown along its Z-axis was cut in X and Y directions , polished and subjected to various characterization studies. Phase and structure of the grown crystal was confirmed by Powder XRD measurement. FTIR spectrum was carried out to confirm the functional groups present in the grown crystals. The optical behavior was studied by UV–vis-NIR analysis. Electrical properties such as Dielectric constant, Resistivity, Conductivity and Piezoelectric coefficient have also been studied. Keywords:Langasite, Czocharlski technique, Piezoelectric ,SAW device, Introduction Piezoelectric materials play a very important role in the modern industry. The most widely spread products of piezoelectric engineering is radio frequency (RF) control elements (resonators) and selection (filters)[1, 2]. The main material used in piezoelectric engineering is quartz which is having highly stable frequency-temperature characteristics and is the reason for its application in resonator production. One of the piezoelectric materials with high K2 emcis lithium tantalate, enabling to design wide band filters. However, due to the low frequency-temperature stability and the low quality factor (Q) of resonators made of this material the application of these filters is limited. Langasite(LGS) crystal belongs to piezoelectric materials with the value of electromechanical coupling coefficient intermediate between quartz crystal and that of lithium tantalate. LGS has attracted increasing attention because of its excellent properties in applications of surface acoustic wave, bulk acoustic wave, and sensors fields[3,4]. An important feature of LGS is that it undergoes no phase transitions up to its melting point, which stimulates the development of langasite- based piezoelectric sensors[5,6]. In the present work LGS crystal has been grown by Czochralski method and subjected to XRD, FTIR, UV and Electrical characterization. II. Synthesis The LGS polycrystalline material synthesis was carried as per the following reaction 3 La2O3 + 5 Ga2O3 + 2 SiO2 ------- 2 La3Ga5SiO14 The synthesis of LGS has been carried out by solid state sintering method from precursors of 99.99% pure La2O3, Ga2O3 and SiO2 weighed according to stoichiometry ratio and then well mixed in a planetary mill for 6 hours. To compensate the loss of Ga by volatisation at high temperature excess amount of Ga was taken. Mixtures were then pressed at 10 kgf/cm2 to pellets and sintered for 12 h at 11000 C.The polycrystalline LGS pellet is shown in Figure 1.
  • 2. International Journal of Trendy Research in Engineering andTechnology Volume 4 Issue 6 Oct’ 2020 ISSN NO 2582-0958 ______________________________________________________________________________________________________________ www.trendytechjournals.com 7 Fig.1.The prepared Polycrystalline LGS pellet Growth of Langasite crystal Langasite crystal was grown along its Z-axis by the conventional Czochralski technique. Initially polycrystalline LGS pellets were charged into Pt/10%Rh crucibles of 50 mm diameter and 50 mm height. Pellets of LGS weighing 150 g which is much less than the volume of the crucible were taken in the crucible in order to avoid overflow of material from the crucibles when the pellets are molten. The crucible was then placed on a crucible holder which can be moved vertically along the furnace axis, thus allowing an appropriate positioning of the crucible within the temperature gradient of the furnace. The basic process was to melt the pellets completely and then to cool it to observe the exact crystallization temperature of the material for the present setup. Charge was heated to 1600 0 C , held at that temperature for 3 h for complete melting and then cooled down slowly to find the solidification temperature. After several runs the crystallization temperature was found to be 1480°C, and a polycrystalline seed crystal (Figure 10) was introduced at this temperature so as to initiate the growth process by pulling and simultaneous rotation of the seed rod. A pulling rate of 0.5-3 mm/h and rotation rate of 5-40 rpm were maintained during growth process. The as grown single crystal of size 38x22x9 mm is shown in figure 2a.The X and Y cut crystal are shown in fig.2b. Fig. 2. Photograph of grown LGS crystal IV. Characterization i) X-ray diffraction study Powder X-ray diffraction analysis of the polycrystalline LGS prepared by solid state reaction method and LGS crystal was carried out using PANalytical-X-ray diffractometer in the range 10 - 70° to confirm the structure and phase. The Kα radiations from a copper target (λ = 1.5406 Ǻ) was used.The Powder-XRD spectrum of polycrystalline LGS and LGS crystal are shown in Figure 3. From the Powder- XRD spectrum, the formation of LGS phase and structure was confirmed. The calculated cell parameter values are a=8.1624 , c=5.093. The diffraction pattern well agreed with the data of standard for LGS (JCPDS No: 72-2249). Fig.3. The Powder-XRD spectrum of polycrystalline LGS crystal (a) and Grown LGS crystal (b)
  • 3. International Journal of Trendy Research in Engineering andTechnology Volume 4 Issue 6 Oct’ 2020 ISSN NO 2582-0958 ______________________________________________________________________________________________________________ www.trendytechjournals.com 8 UV-Vis-NIR absorption spectrum The absorption spectrum of Langasite crystal was recorded using Lambda 35 UV Winlab Spectrometer. The UV spectrum was recorded between 400 to 1100 nm. The recorded absorption spectra of Langasite crystal is shown in Figure 4. The absorption edge was observed in the range 500 - 600 nm. Fig.4 UV reflected spectrum of LGS crystal FTIR Analysis Figure 5 shows the From the FTIR spectra of the sample shown in figure 5 the functional groups are analyzed taking into account the molecular structure of the material. The peak at 450 cm-1 is assigned to the O-La-O stretch. The absorption bands in the region of 575 cm-1 are due to O-Si- O stretching mode. Stretching at 628 cm-1 and 735 cm-1 are the evidence for the existence of Ga-O group. The band at 675 cm-1 signifies the La-O stretching vibration. The Si-O stretching vibration obtained at 779 and 879 cm-1 . Fig.5 FTIR recorded spectrum of LGS crystal Dielectric studies Frequency dependence of dielectric constant for Langasite crystal in the frequency range 100 Hz to 3 MHz at 313 Kis shown in figure 6. It is observed that dielectric constant is high at low frequency which is due to the contribution of various polarization[7]. At high frequencies, only electronic polarization with large relaxation time exists and all other polarizations cease[8]. Hence the net dielectric constant decreases as frequency increases. The dielectric constant for the Langasite crystal at 1MHz was calculated found to be 8.87. Fig.6 Frequency dependence of dielectric constant for LGS crystal at 313 K
  • 4. International Journal of Trendy Research in Engineering andTechnology Volume 4 Issue 6 Oct’ 2020 ISSN NO 2582-0958 ______________________________________________________________________________________________________________ www.trendytechjournals.com 9 Tangent loss (tanδ) found to have higher value at low frequency and decreases with increasing frequency, illustrating the relaxation process. The higher dielectric loss that occurs at lower frequency may be due to an accumulation of free charge. The polar ionization which occurs due to the charge accumulation of decreases, leads to a decrease in the value of the dielectric loss. Fig.7 Frequency dependence of dielectric loss for LGS crystal at 313 K AC conductivity Figure 8 shows the frequency dependence of AC conductivity (σac) at 313 K for Langasite crystal. The AC electrical conductivity (σac) of the LGS crystal was calculated from the following equation, σac =ωɛrɛ0tanδ where ω (=2πf) is the angular frequency, f is the applied frequency. From fig.8, it is clear that the conductivity is independent of frequency at low frequency region whereas above the characteristic frequency the conductivity increases with increase in frequency. The high conductivity at higher frequencies confirms the short-range intrawell hopping of charge carriers between localized states[9]. Fig.8 Frequency dependence of AC conductivity for LGS crystal at 313 K. Piezoelectric studies The piezoelectric coefficient (d33) was measured for the grown Langasite crystal using APC USA make YE2730A model d33 meter. The Piezoelectric coefficient of Langasite crystal was found to be 5 pC/N. Conclusion Langasite single crystal of length 1cm was grown by Czochralski technique . The structure of LGS was confirmed by powder XRD. UV- Vis –NIR absorption spectrum shows absorption edge at 525 nm. The various functional groups present in the crystal were confirmed by FTIR analysis. The dielectric measurements show that the dielectric constant and dielectric loss decreases with increase in frequency. The AC conductivity values found to have higher values at high frequency. Piezoelectric coefficient of the crystal was found to be 5 pC/N.
  • 5. International Journal of Trendy Research in Engineering andTechnology Volume 4 Issue 6 Oct’ 2020 ISSN NO 2582-0958 ______________________________________________________________________________________________________________ www.trendytechjournals.com 10 Acknowledgement Author wish to acknowledge the financial support from ISRO for carrying out this research (ISRO/RES/3/664/2014-15) References [1] H. Fritze and H.L. Tuller, Langasite for High-Temperature Bulk Acoustic Wave Applications. Appl. Phys. Lett., 78, 976- 977 (2001) [2] JorgenRodel, WookJo, KlausT.P.Seifert, Eva-MariaAnton, TorstenGranzow, Damjanovic, Perspective on the development of lead-free piezo ceramics.J.Am.Ceram.soc. 92, 1153– 1177 (2009) [3] A. N. Gotalskaya, D. I. Drezin, V. V. Bezdelkin. V. N. Stassevich,Pecularities of technology, physical properties and applications of new piezoelectric material langasite.IEEE International Frequency Control Symposium, 6, 339–347(1993) [4] B. V. Mill, Yu. K. Pisarevsky, Langasite-type materials: from discovery to present state, IEEE / EIA International Frequency Control Symposium and Exhibition. 23, 133– 144(2000) [5] R. Fachberger, G. Bruckner, G. Knoll, et al, “Applicability of LiNbO3, langasite and GaPO4 in high temperature SAW sensors operating at radio frequencies, IEEE Trans. Ultrason. Ferroel. Freq. Contr., 51, 1427-143 (2004) [6] M. Schulz, D. Richter, and H. Fritze, Material and resonator design dependant loss in langasite bulk acoustic wave resonators at high temperatures, Proc. IEEE Interl. Ultrason.Symp, 2, 1676- 1679 (2009) [7] A. Ashok, T. Somaiah, D. Ravinder, C. Venkateshwarlu, C. Reddy, K. Rao, M. Prasad, Electrical properties of cadmium substitution in nickel ferrites. World J. Condens. Matter Phys. 2, 257–266 (2012) [8] K. TamizhSelvi, K. Alamelumangai, M. Priya, M. Rathnakumari, P. Suresh Kumar, Suresh Sagadevan “Studies on synthesis, structural, surface morphological and electrical properties of Pr6O11–MgOnanocomposite” J Mater Sci: Mater Electron.27, 6457– 6463 (2016) [9] A.K. Abdul Gafoor , M.M.Musthafa, P.P.Pradyumnan “Effect of Nd3+ Doping on Optical and Dielectric Properties of TiO2 Nanoparticles Synthesized by a Low Temperature Hydrothermal Method” Jr. of Nano Science and Nano Technology 1, 53-57 (2012)