This document provides specifications for a silicon non zero-crossing photo triac chip with the device number MC-0104X. The chip is planar in structure with aluminum alloy electrodes. It has dimensions of 1.200 mm x 1.100 mm x 0.305 mm and pad areas of 0.175 mm x 0.125 mm. The document lists electrical characteristics including a peak blocking current of 100 nA, peak on-state voltage of 1.5-3V, critical rate of rise of 1000 V/μs, and holding current of 100 μA. It also includes a pattern drawing of the chip layout.

1. SILICON PHOTO-TRIAC CHIPS
DEVICE NO : MC-0104X
1. Application:
This specification applies to silicon non zero-crossing photo triac chips,
Device No. MC-0104X
. Structure:
2-1. planar type.
2-2. Electrodes: Aluminum alloy.
3. Dimensions:
3-1. Chip size : 47.2 mils × 43.3 mils ( 1.200 mm × 1.100 mm ).
3-2. Chip thickness : 12 ± 1.5 mils ( 0.305 ± 0.038 mm ).
3-3. Pad Area : 6.9 mils × 4.9 mils ( 0.175 mm × 0.125 mm ).
3-4. Pattern drawing : Refer to the attached drawing.
4. Electrical Characteristics (Ta= ℃
25℃)
Parameter Symbol Condition Min. Typ. Max. Unit
Peak Blocking
IDRM VDRM=600V 100 nA
Current
Peak On-State
VTM ITM=100mA 1.5 3 V
Voltage
Critical Rate of Rise
dV/dt 1000 V/µs
Voltage
Holding Current IH 100 µA
5. Pattern Drawing
M1 M2
MOUCHIAN OPTOELECTRONIC Co.,Ltd.
Tel: 886-3-5647136
Fax:886-3-5647180
Jun.2006