1. KEY QUALIFICATION .
 Semiconductor Processing/Integration: Graphene and (III-N) GaN/AlGaN Transistors, MEMS
 TCAD Simulation: Device and Process
 DC/RF Test/Measurement: On Wafer/ Bench Level
 Expertise in Device Physics
 Raman Spectroscopy
 THz Image Sensor Characterization
EDUCATION .
 PhD Candidate, EE, Florida International University, Miami, FL (expected 04/16) GPA 3.76
 MS, EE, Florida International University, Miami, FL (04/12) GPA 4.00
 BS, Applied Physics and Electronics, University of Dhaka, Bangladesh, 12/09 (1st Class 4th Position)
EXPERIENCE .
Florida International University, Miami, FL 08/10 – Present
Graduate Research Assistant
 Model, fabricate/integrate Graphene RF transistors with 27.3% higher cutoff frequency
 Model, fabricate/integrate GaN and Graphene THz sensors capable to detect THz in room temperature
 Measure DC and RF characteristics of Graphene RF transistors
 Measure THz response of GaN/AlGaN and Graphene THz sensors in roomand cryogenic temperature
 Detect H2 adsorption in Graphene from Raman shift and engineer its bandgap (up to 83.6 meV)
Florida International University, Miami, FL 08/12 – 08/14
Graduate Teaching Assistant
 Instructed junior level course: Circuits Lab (Spring – Summer, 2014) - Average class size of 35 students
 Teaching Assistant for graduate level course: Fundamentals of Nanofabrication (Fall 2013) - fabricated and
characterized MEMS Pressure Sensor on Si/Si3N4 wafer with 20 students in clean room
 Teaching Assistant for senior level course: Introduction to Fields and Waves (Fall 2012 - Spring 2013)
 Teaching Assistant for senior level course: Power Systems I & III (Summer 2013 - Fall 2013)
SEMICONDUCTOR PROCESSING FACILITIES USED .
 Oak Ridge National Laboratory, Center for Nanophase Materials Sciences, Oak Ridge, TN
o GaN/AlGaN Transistor Fabrication/Integration
 Motorola Nanofabrication Research Facility, Advanced Materials Engineering Research Institute, FIU
o Graphene Transistor Fabrication/Integration
TECHNICAL SKILLS .
Clean Room Equipment and Techniques:
 4.5 years’ experience of working in a Class 100 clean room with: Electron Beam Lithography (EBL),
Photolithography, Proximity Correction Software: GenISys Layout BEAMER; Atomic Layer Deposition
(ALD), Rapid Thermal Annealing (RTA), E-beam Metallization, Reactive Ion Etching (RIE), Wet Etching,
Liftoff, Mask Align, Spin Coating, Wire Bonding, Raman Spectroscopy, and Laser Engraving.
Metrology Tools:
 Scanning Electron Microscope (SEM), Atomic Force Microscope (AFM), Surface Profilometer.
Bench Level Tool:
 Keithley 2400, Spectrum Analyzer, RF Signal Generator, Oscilloscope and basic tools
On Wafer RF/DC Characterization:
 Vector Network Analyzer (S-Parameter), WinCal XE, Semiconductor Parameter Analyzer, Vacuum Wafer
Prober
Simulation/Modeling/CAD Software:
 4.5 years’ experience of TCAD Simulation: Silvaco Atlas, Athena; Lumerical FDTD Solution, MATLAB,
PSpice, Aim-Spice and Multisim, Layout Editor and 3D modeling using SketchUp
THz Sources:
 Backward Wave Oscillator (BWO) and THz Time Domain Spectroscopy (TDS)
Programming Languages: NI LabVIEW, Assembly Language and C
Chowdhury Al-Amin
PhD Candidate, will graduate and be available on April 2016
Miami, FL 33174
Calam003@fiu.edu
Phone: (305)793-5173
LinkedIn: www.linkedin.com/in/calamin/

2. RELEVANT COURSES .
 Fundamentals of Nanofabrication  Advanced Solid State Devices
 Semiconductor Device Theory  Microwave Engineering
 Antenna Theory  Nanoelectronic Material
 Introduction to Nanotechnology  Thin Film Engineering
HONORS & AWARDS .
 Dissertation Year Fellowship-2015
 1st place in Electrical and Computer Engineering at the 2013 Florida International University Scholarly
Forum
 Award for Distinguished Scientific Contributions to the First Statewide Graduate Student Research
Symposium at University of South Florida
 GPSC, FIU Travel Award-2015
 GPSC, FIU Travel Award-2014
 Research Assistantship at FIU
 Teaching Assistantship at FIU
AFFILIATIONS .
 Student Member, IEEE
 Student Member, SPIE
PUBLICATIONS .
Journal
1. Al-Amin, C., Karabiyik, M., Vabbina, P., Sinha, R. and Pala, N. , "Graphene FETs with Low-Resistance
Hybrid Contacts for Improved High Frequency Performance," IEEE Transactions on Electron Devices
(Submitted) (2015)
2. Al-Amin, C., Karabiyik, M., Vabbina, P., Sinha, R. and Pala, N. , "Field controlled RF Graphene FETs
with improved high frequency performance," Solid-State Electronics 95, 36-41 (2014)
3. Al-Amin, C., Vabbina, P. K., Karabiyik, M., Sinha, R., Pala, N. and Choi, W. , "Improving High-Frequency
Characteristics of Graphene FETs by Field-Controlling Electrodes," IEEE Electron Device Letter (2013)
Conference
1. Al-Amin, C., Sinha, R., Pala, N. and Choi, W., “Lowering contact resistance of graphene FETs with
capacitive extension of ohmic contacts for enhanced RF performance", SPIE DSS, 2015 (Accepted)
2. Al-Amin, C., Sinha, R., Pala, N. and Choi, W., “Novel graphene FETs with field-controlling electrodes to
improve RF performance", SPIE DSS, 2014