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Lectures: Condensed Matter II
1 - Quantum dots
2 - Kondo effect
Luis Dias – UT/ORNL
Lecture 1: Outline
„ What are Quantum Dots?
„ Confinement regimes
„ Transport in QDs: General aspects.
„ Transport in QDs: Coulomb blockade regime.
„ Transport in QDs: Peak Spacing.
What are Quantum Dots?
Semiconductor Quantum Dots:
ƒDevices in which electrons
are confined in nanometer
size volumes.
ƒSometimes referred to as
“artificial atoms”.
ƒ“Quantum dot” is a generic
label: lithographic QDs, self-
assembled QDs, colloidal QDs
have different properties.
Confinement: Particle in a box
0 L
V
1-d box: wavefunction constrained so that
L = N λ / 2 or
k = 2 π / λ = N π / L
Energy of states given by Schrodinger Equation:
As the length scale decreases the energy level spacing increases.
Typical semiconductor dots:
L in nm, E in meV range
If a thin enough 2D plane of material (containing free electrons) is formed
the electrons can be confined to be two dimensional in nature.
Experimentally this is usually done in semiconductors.
Confined in 1 direction: 2D system
2DEG
n doped AlxGa1-xAs GaAs
e.g. by growing a large band gap material with a smaller band gap material you
can confine a region of electrons to the interface - TWO DIMENSIONAL
ELECTRON GAS (2DEG).
E
density
of
states
lowest subband
EF
Confined in 1 direction: 2D system
2DEG
n doped AlxGa1-xAs GaAs
Provided the electrons are confined to the
lowest subband the electrons behave exactly
as if they are two-dimensional i.e. obey 2D
Schrodinger equation etc.
2DEG: Rich source of Physics.
•Nobel Prize in Physics in 1985 to von Klitzing
for the Quantum Hall Effect (QHE),
•1998 to Tsui, Stormer and Laughlin for the
Fractional QHE
•Semiconductor heterostructures, lithography
•Applications (lasers, QHE, etc.)
E
density
of
states lowest subband
EF
Condition for confinement is that the
confinement length of the order of the Fermi
wavelength (L~λF or E1<~EF) . Then electrons
confined in one quantum mechanical state in
two directions, but free to move in the third =>
1D.
Semiconductors are good for that (hard to see
confinement effect in metals)
Interestingly, electrons interact differently in
1D compared to 2D and 3D. As an analogy
think of cars (electrons) moving along a single
track lane. They interact differently compared
to cars on dual carriageways or motorways.
Examples include carbon nanotubes,
nanowires, lithographically defined regions of
2DEGs etc.
Confined in 2 directions: 1D system
density
of
states
lowest subband
E
EF
Electron systems confined in all three directions. ‘0D’
man-made droplets of charge
degree of confinement does not have to be the same in all directions
=> 2 D quantum dots and 1D quantum dots
fabrication either “bottom up”:
or “top down” fabrication:
or combination of both.
Confined in all directions: 0D systems
or Quantum Dots
E
∆ε - size
dependent
e.g. nanocrystals (nanoparticles)
molecules
2DEG
small metal islands
e.g. nanotubes
nanowires
“Artificial Atoms” (?)
E
E
E
conduction
valence
EF
E
E
hybridise
confine
confine
confine
ATOM CRYSTAL
2 D
1 D
0 D
BUT: different energy/length scales as in real atoms.
many-body interactions can become important!!
Lithographic Quantum Dots
from Charlie Marcus’ Lab website (marcuslab.harvard.edu)
How to do it in practice? (a question for the experimentalists…)
Ingredients:
• Growth of heterostructures to obtain the 2DEG
•(good quality, large mean free-paths)
• Metallic electrodes electrostatically deplete charge: confinement
• Sets of electrodes to apply bias etc.
• LOW TEMPERATURE! (~100 mK)
Lithographic Quantum Dots
Jeong, Chang, Melloch Science 293 2222 (2001) Craig et al., Science 304 565 (2004)
Lithography evolved quite a bit
in the last decade or so. Allow
different patterns: double dots,
rings, etc.
From:
K. Ensslin’s group
website
L
R
Vg
QD
Quantum Dots: transport
Lithographic Quantum Dots:
ƒBehave like small capacitors:
ƒWeakly connected to metallic
leads.
ƒEnergy scales: level spacing
∆E; level-broadening Γ.
ƒEC is usually largest energy
scale:
Jeong, Chang, Melloch Science 293 2222 (2001)
Goldhaber-Gordon et al. Nature 391 156 (1998)
Electrical Transport
Gate Electrode
Insulator
Sample
Source Drain
?
EF
METAL
L
METAL
R
EF
?
e Vsd
Role of the Gate Electrode
Gate Electrode
Insulator
Sample
Source Drain
EF
EF
EF
VG = 0 VG = +V VG = -V
Raise Fermi level –
adds electrons
Lower Fermi level –
remove electrons
VG = +V
+ + + + + + + + + +
- - - - - - - - - -
GATE
INSULATOR
SAMPLE
+ + + + + + + + + +
- - - - - - - - - -
GATE
INSULATOR
SAMPLE
Ohm’s Law holds for metallic conductors => V = I R
We can also define a conductance which can be bias dependent
The zero bias conductance, G, is conventionally quoted.
Electrical Transport: Ohm’s Law
V
I
V gate voltage VG
d I
d V
R
1
R
1
d I
d V
G
Resistance due to scattering off impurities, mfp ~ 10 nm
Metallic conductor:
Semiconductor - nonlinear I - V response
Electrical Transport: semiconductors
V
I
V
d I
d V
G
Semiconductor:
tunneling through Schottky barrier
or out of band gap.
gate voltage VG
(changes EF)
conduction
valence
EF
E
Quantum dots contain an integer number of electrons.
Adding an electron to the QD changes its energy => electrostatic charging
energy
In order for a current to pass an electron must tunnel onto the dot, and an
electron must tunnel off the dot.
For conduction at zero bias this requires the energy of the dot with N
electrons must equal the energy with N+1 electrons. i.e. charging energy
balanced by gate potential.
Conductance through quantum dot
Q2
2 C
N
electrons
N+1
electrons
N
electrons
specified by Fermi level
Coulomb Blockade in Quantum Dots
Coulomb Blockade in Quantum Dots
Y. Alhassid Rev. Mod. Phys. 72 895 (2000).
Vg
Vg
conductance
Ec
Ec
Ec
Even N Odd N Even N
Coulomb Blockade in Quantum Dots
Coulomb Blockade in Quantum Dots: “dot spectroscopy”
Y. Alhassid Rev. Mod. Phys. 72 895 (2000).
Coulomb blockade
The number of electrons on the QD is adjusted by the gate potential.
Conduction only occurs when EN = EN+1
The addition of an electron to the dot is blocked by the charging energy as
well as the level spacing => Coulomb blockade
VG
G
N
N-1 N+1
no conductance - Coulomb Blockade
N
N-1
N+1
Charging Energy Model
The no. of electrons on the QD is adjusted by the gate potential.
Conductance peak spacing
level spacing
∆ε charging energy
Conductance peak spacing II
VG
G
N
N-1 N+1
no conductance - Coulomb Blockade
Conductance peak spacing III: spin
degeneracy
VG
G
N
N-1 N+1
no conductance - Coulomb Blockade
In the event of degeneragy, e.g. spin degeneracy
Level spacing statistics (e2/C is const):
Peak spacing statistics: e-e interactions
Level spacing distribution P(∆E):
Theory: CI+RMT prediction
Superposition of two distributions:
• even N: large, chaotic dots:
P(∆E) obeys a well known
RMT distribution (not Gaussian)
• odd N: Dirac delta function.
Experiment:
P(∆E) gives a Gaussian.
Possible explanations:
Spin exchange, residual e-e
interaction effects*.
Sivan et al. PRL 77 1123 (1996).
* Jiang, Baranger, Yang PRL 90 026806 (2003).
• These devices are often call single electron transistors - conductance
modulated by gate voltage between on and off states and the mechanism is
single electron transport.
•Most obvious proposed application is for replacing conventional FET.
•By making stable energy states can have defined spin on the dot =>
spintronics
•Quantum computing through ‘mixing’ spins etc.
•Fundamental science
Applications of a ‘SET’
Same electronic quantisation => enhanced optical properties
greater specificity of colour
greater intensity of emission
In addition reducing size increases band gap => tunable color
Colloidal quantum dots (nanocrystals)
Already in the market!
•$750 (10 mg kit, 6 colors) at
www.nn-labs.com
Applications:
• Most used: biological “tagging”
• Other ideas: prevent
counterfeiting money, IR
emmiters (“quantum dust”)

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UTK_Lecture1_March08.pdf

  • 1. Lectures: Condensed Matter II 1 - Quantum dots 2 - Kondo effect Luis Dias – UT/ORNL
  • 2. Lecture 1: Outline „ What are Quantum Dots? „ Confinement regimes „ Transport in QDs: General aspects. „ Transport in QDs: Coulomb blockade regime. „ Transport in QDs: Peak Spacing.
  • 3. What are Quantum Dots? Semiconductor Quantum Dots: ƒDevices in which electrons are confined in nanometer size volumes. ƒSometimes referred to as “artificial atoms”. ƒ“Quantum dot” is a generic label: lithographic QDs, self- assembled QDs, colloidal QDs have different properties.
  • 4. Confinement: Particle in a box 0 L V 1-d box: wavefunction constrained so that L = N λ / 2 or k = 2 π / λ = N π / L Energy of states given by Schrodinger Equation: As the length scale decreases the energy level spacing increases. Typical semiconductor dots: L in nm, E in meV range
  • 5. If a thin enough 2D plane of material (containing free electrons) is formed the electrons can be confined to be two dimensional in nature. Experimentally this is usually done in semiconductors. Confined in 1 direction: 2D system 2DEG n doped AlxGa1-xAs GaAs e.g. by growing a large band gap material with a smaller band gap material you can confine a region of electrons to the interface - TWO DIMENSIONAL ELECTRON GAS (2DEG). E density of states lowest subband EF
  • 6. Confined in 1 direction: 2D system 2DEG n doped AlxGa1-xAs GaAs Provided the electrons are confined to the lowest subband the electrons behave exactly as if they are two-dimensional i.e. obey 2D Schrodinger equation etc. 2DEG: Rich source of Physics. •Nobel Prize in Physics in 1985 to von Klitzing for the Quantum Hall Effect (QHE), •1998 to Tsui, Stormer and Laughlin for the Fractional QHE •Semiconductor heterostructures, lithography •Applications (lasers, QHE, etc.) E density of states lowest subband EF
  • 7. Condition for confinement is that the confinement length of the order of the Fermi wavelength (L~λF or E1<~EF) . Then electrons confined in one quantum mechanical state in two directions, but free to move in the third => 1D. Semiconductors are good for that (hard to see confinement effect in metals) Interestingly, electrons interact differently in 1D compared to 2D and 3D. As an analogy think of cars (electrons) moving along a single track lane. They interact differently compared to cars on dual carriageways or motorways. Examples include carbon nanotubes, nanowires, lithographically defined regions of 2DEGs etc. Confined in 2 directions: 1D system density of states lowest subband E EF
  • 8. Electron systems confined in all three directions. ‘0D’ man-made droplets of charge degree of confinement does not have to be the same in all directions => 2 D quantum dots and 1D quantum dots fabrication either “bottom up”: or “top down” fabrication: or combination of both. Confined in all directions: 0D systems or Quantum Dots E ∆ε - size dependent e.g. nanocrystals (nanoparticles) molecules 2DEG small metal islands e.g. nanotubes nanowires
  • 9. “Artificial Atoms” (?) E E E conduction valence EF E E hybridise confine confine confine ATOM CRYSTAL 2 D 1 D 0 D BUT: different energy/length scales as in real atoms. many-body interactions can become important!!
  • 10. Lithographic Quantum Dots from Charlie Marcus’ Lab website (marcuslab.harvard.edu) How to do it in practice? (a question for the experimentalists…) Ingredients: • Growth of heterostructures to obtain the 2DEG •(good quality, large mean free-paths) • Metallic electrodes electrostatically deplete charge: confinement • Sets of electrodes to apply bias etc. • LOW TEMPERATURE! (~100 mK)
  • 11. Lithographic Quantum Dots Jeong, Chang, Melloch Science 293 2222 (2001) Craig et al., Science 304 565 (2004) Lithography evolved quite a bit in the last decade or so. Allow different patterns: double dots, rings, etc. From: K. Ensslin’s group website L R Vg QD
  • 12. Quantum Dots: transport Lithographic Quantum Dots: ƒBehave like small capacitors: ƒWeakly connected to metallic leads. ƒEnergy scales: level spacing ∆E; level-broadening Γ. ƒEC is usually largest energy scale: Jeong, Chang, Melloch Science 293 2222 (2001) Goldhaber-Gordon et al. Nature 391 156 (1998)
  • 13. Electrical Transport Gate Electrode Insulator Sample Source Drain ? EF METAL L METAL R EF ? e Vsd
  • 14. Role of the Gate Electrode Gate Electrode Insulator Sample Source Drain EF EF EF VG = 0 VG = +V VG = -V Raise Fermi level – adds electrons Lower Fermi level – remove electrons VG = +V + + + + + + + + + + - - - - - - - - - - GATE INSULATOR SAMPLE + + + + + + + + + + - - - - - - - - - - GATE INSULATOR SAMPLE
  • 15. Ohm’s Law holds for metallic conductors => V = I R We can also define a conductance which can be bias dependent The zero bias conductance, G, is conventionally quoted. Electrical Transport: Ohm’s Law V I V gate voltage VG d I d V R 1 R 1 d I d V G Resistance due to scattering off impurities, mfp ~ 10 nm Metallic conductor:
  • 16. Semiconductor - nonlinear I - V response Electrical Transport: semiconductors V I V d I d V G Semiconductor: tunneling through Schottky barrier or out of band gap. gate voltage VG (changes EF) conduction valence EF E
  • 17. Quantum dots contain an integer number of electrons. Adding an electron to the QD changes its energy => electrostatic charging energy In order for a current to pass an electron must tunnel onto the dot, and an electron must tunnel off the dot. For conduction at zero bias this requires the energy of the dot with N electrons must equal the energy with N+1 electrons. i.e. charging energy balanced by gate potential. Conductance through quantum dot Q2 2 C N electrons N+1 electrons N electrons specified by Fermi level
  • 18. Coulomb Blockade in Quantum Dots Coulomb Blockade in Quantum Dots Y. Alhassid Rev. Mod. Phys. 72 895 (2000). Vg Vg conductance Ec Ec Ec Even N Odd N Even N
  • 19. Coulomb Blockade in Quantum Dots Coulomb Blockade in Quantum Dots: “dot spectroscopy” Y. Alhassid Rev. Mod. Phys. 72 895 (2000).
  • 20. Coulomb blockade The number of electrons on the QD is adjusted by the gate potential. Conduction only occurs when EN = EN+1 The addition of an electron to the dot is blocked by the charging energy as well as the level spacing => Coulomb blockade VG G N N-1 N+1 no conductance - Coulomb Blockade N N-1 N+1
  • 21. Charging Energy Model The no. of electrons on the QD is adjusted by the gate potential.
  • 22. Conductance peak spacing level spacing ∆ε charging energy
  • 23. Conductance peak spacing II VG G N N-1 N+1 no conductance - Coulomb Blockade
  • 24. Conductance peak spacing III: spin degeneracy VG G N N-1 N+1 no conductance - Coulomb Blockade In the event of degeneragy, e.g. spin degeneracy Level spacing statistics (e2/C is const):
  • 25. Peak spacing statistics: e-e interactions Level spacing distribution P(∆E): Theory: CI+RMT prediction Superposition of two distributions: • even N: large, chaotic dots: P(∆E) obeys a well known RMT distribution (not Gaussian) • odd N: Dirac delta function. Experiment: P(∆E) gives a Gaussian. Possible explanations: Spin exchange, residual e-e interaction effects*. Sivan et al. PRL 77 1123 (1996). * Jiang, Baranger, Yang PRL 90 026806 (2003).
  • 26. • These devices are often call single electron transistors - conductance modulated by gate voltage between on and off states and the mechanism is single electron transport. •Most obvious proposed application is for replacing conventional FET. •By making stable energy states can have defined spin on the dot => spintronics •Quantum computing through ‘mixing’ spins etc. •Fundamental science Applications of a ‘SET’
  • 27. Same electronic quantisation => enhanced optical properties greater specificity of colour greater intensity of emission In addition reducing size increases band gap => tunable color Colloidal quantum dots (nanocrystals) Already in the market! •$750 (10 mg kit, 6 colors) at www.nn-labs.com Applications: • Most used: biological “tagging” • Other ideas: prevent counterfeiting money, IR emmiters (“quantum dust”)